Abstract: A program-based electronic program guide (EPG) system is provided, the EPG system including a search unit which searches for and finds programs broadcast within a predetermined time period around a predetermined time, a collection unit which collects program information of programs found by the search unit, a classification unit which classifies the program information collected by the collection unit based on program codes, and a display unit which displays program guide information, including the program information classified by the classification unit.

Abstract: A thin film transistor, a method of fabricating the same, and an organic light emitting diode (OLED) display device including the same. The thin film transistor includes a substrate; a semiconductor layer disposed on the substrate and including a channel region; source/drain regions including ions and an offset region; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; a first insulating layer disposed on the gate electrode; a second insulating layer disposed on the first insulating layer; and source/drain electrodes disposed on the second insulating layer, and electrically connected to the source/drain regions of the semiconductor layer, respectively. The sum of thicknesses of the gate insulating layer and the first insulating layer that are on the source/drain regions is less than the vertical dispersion depth of the ions included in the source/drain regions.

Abstract: A display module may include a flexible panel that is bent in a direction such that a compressive stress is exerted on a display unit within a housing.

Abstract: Disclosed is a swing control apparatus of construction machinery, including: a hydraulic pump discharging working oil for driving a swing motor and controlling a discharge flux according to an input pump command value Vpump; a pressure sensor sensing pressure of the working oil discharged from the hydraulic pump; and a control unit calculating the pump command value Vpump based on a swing operation quantity Vsw input from the swing operation unit to output the calculated pump command value to the hydraulic pump, wherein when the input swing operation quantity Vsw is larger than a preset reference swing operation quantity Vswo and the discharge pressure Ppump of the hydraulic pump detected by the pressure sensor is lower than a first reference pressure Pswr1, the control unit calculates a converted swing operation quantity Vsw? gradually increasing from the reference swing operation quantity Vswo to the input swing operation quantity Vsw and calculates the pump command value Vpump of the hydraulic pump corresp

Abstract: The present invention provides a method of automatically calculating a power curve limit for the power curve monitoring of a wind turbine that may set an optimal power curve limit by automatically calculating a power curve limit for power curve monitoring even if wind speed-power data measured at a wind turbine includes a large amount of abnormal data in addition to normal data. To this end, the present invention includes: classifying, by an input data classifying unit, the input data on wind power generation through a variable speed bin; calculating, by a power calculating unit, a power average value and standard deviation for each bin for the classified input data; estimating, by a power curve estimating unit, a power curve for the calculated power average value for each bin; searching for, by a limit searching unit, an accurate power curve limit while moving the estimated power curve; and setting, by a data extracting unit, the data included in the accurate power curve limit as new input data.

Abstract: In a semiconductor device, a first gate structure is provided in a cell transistor region and includes a floating gate electrode, a first dielectric layer pattern, and a control gate electrode including a first metal silicide pattern. A second gate structure is provided in a selecting transistor region and includes a first conductive layer pattern, a second dielectric layer pattern, and a first gate electrode including a second metal silicide pattern. A third gate structure is provided in a peripheral circuit region and includes a second conductive layer pattern, a third dielectric layer pattern including opening portions on the second conductive layer pattern, and a second gate electrode including a concavo-convex portion at an upper surface portion thereof and a third metal silicide pattern. The third metal silicide pattern has a uniform thickness.

Abstract: Stack packages are provided. The stack package includes a substrate having first and second bond fingers and a plurality of semiconductor chips stacked on the substrate. Each of the plurality of semiconductor chips has an input bonding pad and an output bonding pad. A first interconnection electrically connects the first bond finger to the input bonding pad of a lowermost semiconductor chip of the plurality of semiconductor chips. A second interconnection electrically connects the output bonding pad of a lower semiconductor chip of the plurality of semiconductor chips to the input bonding pad of an upper semiconductor chip stacked on the lower semiconductor chip. A third interconnection electrically connects the output bonding pad of an uppermost semiconductor chip of the plurality of semiconductor chips to the second bond finger.

Abstract: A method of fabricating an organic light emitting diode (OLED) display device having a thin film transistor including a polysilicon layer. The method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Abstract: An apparatus and method for adapting a diagnostic model for Computer-Aided Diagnosis (CAD). The CAD apparatus includes an image acquirer configured to acquire an image of an object, a diagnosis model store configured to store at least one diagnostic model, an adaptive information provider configured to provide adaptive information regarding the image, a diagnostic model adapter configured to select a diagnostic model from the diagnostic model store and to generate an adapted diagnostic model based on the selected diagnostic model and the adaptive information, and a diagnoser configured to perform CAD on the image using the adapted diagnostic model.

Abstract: An image control panel for a display device includes a first substrate and a second substrate facing each other, a lens electrode formed on the first substrate, a common electrode formed on the second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate. The common electrode includes a first common electrode and a second common electrode separated from each other.

Abstract: An apparatus and method of storing and searching for an image are provided. The apparatus includes: a first signal processor which receives location information about an object detected by a sensor, generates and transmits a camera control signal to a camera based on the location information so that the camera performs a surveillance in a direction according to the camera control signal, and receives from the sensor an alarm signal notifying an intrusion of the object into a preset area; a second signal processor which receives a surveillance image of the intruding object received from the surveillance of the camera; and a control unit which stores the surveillance image in a storage unit.

Abstract: A radar sensor and a method of detecting an object by using the same are provided. The method includes: receiving at least one radar signal reflected from the object; converting the received at least one radar signal to at least one signal in a frequency domain; accumulating the converted at least one signal for a predetermined time and extracting at least one feature from the accumulated at least one signal; and identifying the object by comparing the extracted at least one feature with at least one reference value stored in a database.

Abstract: The present invention relates to a foundation structure vertically installed on the ground, and comprising: an upper support layer 10 formed on the ground in the vertical direction; and a lower support layer 20 formed so as to extend downward from the upper support layer 10 and such that the width thereof is less than that of the upper support layer 10. The disclosed upper support layer 10 and the lower support layer 20 are structures formed from soil solidified by means of feeding and mixing an earth and soil-solidifying agent therein, and therefore are efficient and prevent overload due to boring equipment.

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

Abstract: Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target.

Abstract: Disclosed herein are a personal cloud storage chain service system and method which are capable of solving the shortage problem of personal cloud storage by connecting surplus storages, used by each person, to a Digital Media Player (DMP) (e.g., a SetTopBox (STB)) and storing and managing content. A personal cloud storage chain service system according to an embodiment of the present disclosure includes one or more storages configured to include a surplus storage space and be detachable and a DMP configured to issue and store respective signatures for identifying the respective storages when the one or more storages are connected and to store and manage basic information about contents stored in the one or more storages.

Abstract: An apparatus configured to count people in a target area includes a wireless transceiver and a controller. The wireless transceiver is configured to radiate an impulse electromagnetic wave to the target area and receive a reflection signal from the target area, and the controller is configured to obtain a signal strength of the reflection signal over a reception time period during which the reflection signal is received and count people according to the signal strength, considering that the signal strength is weakened in proportion to the reception time period.

Abstract: The semiconductor package includes semiconductor chips, each chip having one or more bonding pads. The semiconductor chips are stacked in a stepped configuration over the surface of the substrate without covering one or more bonding pads. An encapsulation member encapsulates the stacked semiconductor chips on the surface of the substrate. Via wirings in the encapsulation member electrically connect to a bonding pad of at least one of the semiconductor chips. Redistributions are formed over the encapsulation member such that the one or more redistributions are electrically coupled to the via wirings.

Abstract: A contact portion of wiring and a method of manufacturing the same are disclosed. A contact portion of wiring according to an embodiment includes: a substrate; a conductive layer disposed on the substrate; an interlayer insulating layer disposed on the conductive layer and having a contact hole; a metal layer disposed on the conductive layer and filling the contact hole; and a transparent electrode disposed on the interlayer insulating layer and connected to the metal layer, wherein the interlayer insulating layer includes a lower insulating layer and an upper insulating layer disposed on the lower insulating layer, the lower insulating layer is undercut at the contact hole, and the metal layer fills in the portion where the lower insulating layer is undercut.

Abstract: A multilayer ceramic capacitor includes a ceramic body having first and second main surfaces opposing one another, first and second lateral surfaces opposing one another, and first and second end surfaces opposing one another. First and second internal electrodes have an overlap region with lead out portions exposed to the first lateral surface of the ceramic body. An insulating layer is formed to cover the overlap region of the lead out portions exposed to the first lateral surface of the ceramic body; and first and second external electrodes are formed on the first lateral surface of the ceramic body on which the insulating layer is formed and electrically connected to the first and second internal electrodes. Thicknesses of the insulating layer from the first lateral surface and the first and second external electrodes from the first lateral surface are specified.