Abstract: A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion etching, prior to single crystal growth, at least 0.5 ?m and less than 400 ?m, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing from the surface of the seed substrate the work-affected layers caused by mechanical polishing; and growing then a single crystal thereon. The manufacturing method provides a diamond single crystal substrate having a high quality, large size, and no unintentional impurity inclusions, and suitable for use as semiconductor materials, electronic components, optical components or the like.

Abstract: A diamond single crystal composite substrate which are constructed from a plurality of diamond single crystal substrates with uniform plane orientations disposed side by side and integrated overall by growing diamond single crystals thereon by vapor phase synthesis, in which the deviation of the plane orientation of the main plane of each of said plurality of diamond single crystal substrates, excluding one diamond single crystal substrate, from the {100} plane is less than 1 degree, the deviation of the plane orientation of the main plane of the excluded one substrate from the {100} plane is 1 to 8 degrees, said one diamond single crystal substrate is disposed in the outermost circumferential part when the diamond single crystal substrates are disposed side by side, and is disposed so that the <100> direction in the main plane of said one substrate faces in the outer circumferential direction of the disposed substrates, and diamond single crystals are then grown by vapor phase synthesis so that the dia

Abstract: The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.

Abstract: An apparatus forms a diamond film from a microwave plasma by controlling a manufacturing condition based on a spectroscopic measurement of the plasma light emission to obtain a large area of a high-quality diamond film. Using the apparatus, a gas mixture of hydrocarbon gas and hydrogen gas is introduced into a reactor, where the gas mixture is excited by microwave energy which is also introduced into the reactor to generate a plasma, and the light emitted from the plasma is spectroscopically measured using a spectroscope. Furthermore, a formation condition of the diamond film is controlled such that the spectrum of a carbon molecule (C2) falls within a predetermined range of requirement. A carbon molecule vibration temperature is determined from the spectrum, and the formation condition, such as the microwave input power, the reactor pressure, or the gas flow rate, is controlled so that the determined vibration temperature falls within a specified range, especially 2000 to 2800 K.

Abstract: The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.

Abstract: A method of fabricating a heatsink including a substrate of a sintered compact containing Cu and W, and a thin diamond film layer formed on the surface of the substrate with good adherence, involves immersing the substrate in acid to reduce the Cu content of a surface region thereof and to roughen exposed W at that surface region, and then forming the thin diamond film layer on that surface region by vapor synthesis. Alternatively, a thin diamond film layer is formed on a surface of a porous body substrate, and then a hole in the porous body substrate is filled with Cu.

Abstract: An apparatus forms a diamond film from a microwave plasma by controlling a manufacturing condition based on a spectroscopic measurement of the plasma light emission to obtain a large area of a high-quality diamond film. Using the apparatus, a gas mixture of hydrocarbon gas and hydrogen gas is introduced into a reactor, where the gas mixture is excited by microwave energy which is also introduced into the reactor to generate a plasma, and the light emitted from the plasma is spectroscopically measured using a spectroscope. Furthermore, a formation condition of the diamond film is controlled such that the spectrum of a carbon molecule (C2) falls within a predetermined range of requirement. A carbon molecule vibration temperature is determined from the spectrum, and the formation condition, such as the microwave input power, the reactor pressure, or the gas flow rate, is controlled so that the determined vibration temperature falls within a specified range, especially 2000 to 2800 K.

Abstract: A method and an apparatus form a diamond film from a microwave plasma by controlling a manufacturing condition based on a spectroscopic measurement of the plasma light emission to obtain a large area of a high-quality diamond film. In the method of forming a diamond film, a gas mixture of hydrocarbon gas and hydrogen gas is introduced into a reactor, where the gas mixture is excited by microwave energy which is also introduced into the reactor to generate a plasma, and the light emitted from the plasma is spectroscopically measured. Furthermore, a formation condition of the diamond film is controlled such that the spectrum of a carbon molecule (C2) falls within a predetermined range of requirement. A carbon molecule vibration temperature is determined from the spectrum, and the formation pressure, or the gas flow rate is controlled so that the determined vibration temperature falls within a specified range, especially 2000 to 2800 K.

Abstract: The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.

Abstract: A heatsink includes a substrate of a sintered compact including Cu and W, and a thin diamond film layer formed on the surface of the substrate with good adherence. The Cu content in the substrate is at least 5% by weight. In an X-ray diffraction chart obtained by irradiating the thin diamond film layer with an X-ray, the diffraction peak intensity of the (110) plane of W is at least 100 times the diffraction peak intensity of the (200) plane of Cu. The heat sink is fabricated by immersing the substrate in acid to reduce the Cu content of a surface region thereof and to roughen exposed W at that surface region, and then forming the thin diamond film layer on that surface region by vapor synthesis. Alternatively, a thin diamond film layer is formed on a surface of a porous body substrate, and then a hole in the porous body substrate is filled with Cu.

Abstract: A thin diamond film layer is formed on a substrate with good adherence. A heatsink includes a substrate of a sintered compact including Cu and W, and a thin diamond film layer formed on the surface of the substrate. The Cu content in the substrate is at least 5% by weight. In an X-ray diffraction chart obtained by irradiating the thin diamond film layer with an X-ray, the diffraction peak intensity of the (110) plane of W is at least 100 times the diffraction peak intensity of the (200) plane of Cu.

Abstract: A method of manufacturing an electron-emitting element (20) for emitting electrons from diamond includes the first step of forming a diamond columnar member (25) on a diamond substrate (21), and the second step of forming an electron-emitting portion (30) having a base portion (36) and a sharp-pointed portion (32) which is located closer to a distal end side than the base portion (36) and emits the electrons by performing etching processing with respect to the columnar member (25).

Abstract: A method and an apparatus for forming a diamond film from microwave plasma by controlling a manufacturing condition based on spectroscopic measurement of plasma emission to obtain a large area of a high-quality diamond film. In the method of forming a diamond film, a gas mixture of hydrocarbon gas and hydrogen gas is introduced into a reactor, where the gas mixture is excited by microwave which is also introduced into the reactor to generate plasma, and the light emitted from the plasma is spectroscopically measured. Furthermore, a formation condition of the diamond film is controlled such that the spectrum of a carbon molecule (C2) falls within a predetermined range of requirement.