Abstract: A method for forming a dual damascene line structure includes forming an inter-metal dielectric including a first region and a second region on a semiconductor substrate, forming a first hard mask material layer on an entire surface of the inter-metal dielectric, removing the first hard mask material layer on the first region, forming a second hard mask material layer on an entire surface of the inter-metal dielectric, forming a hard mask to remove a portion of the first hard mask material layer on the second region, etching the inter-metal dielectric of the first region to a first thickness using the hard mask, exposing the inter-metal dielectric of the second region, and etching the exposed inter-metal dielectric to simultaneously form a via hole and a trench having the via hole.

Abstract: In order to measure a width of a wire a measuring pattern for the width of the wire is prepared. The measuring pattern includes: a first pattern with a first width; a second pattern connected to the first pattern and having a second width wider than the first width; and a third pattern connected to the second pattern and having a third width narrower than the first width. The first pattern, the second pattern and the third pattern are made of same material. The first pattern through a power source is connected to the third pattern. A first pair of probes are disposed on the first pattern and then are connected to a first voltmeter. A distance between the first pair of probes is a first distance wider than the first width. A second pair of probes are disposed on the second pattern and then are connected to a second voltmeter. A distance between the second pair of probes is a second distance wider than the first width.

Abstract: The present invention discloses a method for forming a copper line of a semiconductor device by using a new damascene process. A copper film is formed over and into trenches formed in a lower insulating layer, a tungsten film is formed on the copper film and planarized, a self-aligned tungsten film pattern is formed over the predetermined copper line region by etching the tungsten film, and a chemical mechanical polishing method is performed using the tungsten film pattern as a hard mask. As a result, the copper line having a generally planar surface and stable conductivity is formed by preventing a misalignment and dishing phenomena, thereby improving device performance, reliability, and process yield.

Abstract: A plasma etching method for a semiconductor apparatus and an etching apparatus of the same are disclosed.

Abstract: A water purifier capable of magnetizing water and adding ceramic components into the magnetized water. The water is magnetized by a rotating permanent magnet, such that its molecular structure is changed into the hexagonal ring structure, and, the dissolved oxygen content of water is increased by passing through a plurality of micro holes or fine grooves on the inside surface of a ceramic filter. Also, mineral components disposed in the double wall of the ceramic filter are added to the water passing through it. Accordingly, the water may be converted into condition suitable to the human body.

Abstract: In order to measure a width of a wire a measuring pattern for the width of the wire is prepared. The measuring pattern includes: a first pattern with a first width; a second pattern connected to the first pattern and having a second width wider than the first width; and a third pattern connected to the second pattern and having a third width narrower than the first width. The first pattern, the second pattern and the third pattern are made of same material. The first pattern through a power source is connected to the third pattern. A first pair of probes are disposed on the first pattern and then are connected to a first voltmeter. A distance between the first pair of probes is a first distance wider than the first width. A second pair of probes are disposed on the second pattern and then are connected to a second voltmeter. A distance between the second pair of probes is a second distance wider than the first width.