Abstract: Disclosed herein are carbon black surface-modified with benzene compound of Formula 1 described in the specification and a carbon black dispersion composition for a black matrix using the carbon black. The carbon black dispersion composition uses carbon black surface-modified with the benzene compound of Formula 1, or about 0.1 to about 20% by weight of a cardo compound selected from cardo monomers, oligomers, polymers and mixtures thereof. The carbon black dispersion composition can provide improved adhesive properties, uniformity and resolution of black matrix patterns, and no undercut is formed on the black matrix patterns.

Abstract: The present invention provides a photosensitive resin composition for a pad protective layer that includes (A) an alkali soluble resin, (B) a reactive unsaturated compound, (C) a photoinitiator, and (D) a solvent. The (A) alkali soluble resin includes a copolymer including about 5 to about 50 wt % of a unit having the Chemical Formula 1, about 1 to about 25 wt % of a unit having the Chemical Formula 2, and about 45 to about 90 wt % of a unit having the Chemical Formula 3, and a method of making an image sensor using the photosensitive resin composition.

Abstract: The photosensitive resin composition for a color filter according to one embodiment of the present invention includes (A) a pigment including a repeating unit of the following Formula 1, (B) a binder resin, (C) a photopolymerization initiator, (D) a photopolymerizable monomer, and (E) a solvent: wherein in the above formula, X, m, and n are the same as in the description.

Abstract: A thermosetting resin composition for producing a color filter for a CMOS image sensor is provided. The thermosetting resin composition comprises an organic solvent and a self-curing copolymer having structural units represented by Formulae 1, 2, 3 and 4, which are described in the specification.

Abstract: Methods of forming integrated circuit devices use metal CMP slurry compositions having relatively low chemical etch rate and relatively high mechanical polishing rate characteristics. The relatively high mechanical polishing rate characteristics are achieved using relatively high concentrations of mechanical abrasive (e.g., ?8 wt %) in combination with sufficient quantities of a wetting agent to inhibit micro-scratching of underlying surfaces (e.g., insulating layers, conductive vias, . . . ) being polished. The slurry compositions also include a highly stable metal-propylenediaminetetraacetate (M-PDTA) complex, which may operate to inhibit metal-oxide re-adhesion on the metal surface being polished and/or inhibit oxidation of the metal surface by chelating with the surface.

Abstract: A photosensitive resin composition for producing a color filter is provided. The composition comprises an alkali-soluble resin, a photopolymerizable monomer, a photopolymerization initiator, a pigment, a dispersant and a solvent. As the dispersant, an amino group-containing maleic acid copolymer resin having long side chains is used. The composition can be used to form a pattern of ultra-fine pixels having a size of up to about 1.0 ?m×about 1.0 ?m without leaving any residue. Further provided is a high-resolution color filter for an image sensor produced using the composition.

Abstract: Provided is a photosensitive resin composition that is developable with an aqueous alkaline solution and is suitable for the production of a color filter for an image sensor. The composition comprises an alkali-soluble resin, a photopolymerizable monomer, a photopolymerization initiator, colorants and a solvent. As the colorants, a pigment and a dye are used in combination. The use of the composition enables the formation of fine pixels that exhibit excellent color reproduction and contrast. Therefore, the composition can be used to produce a high-resolution color filter for an image sensor.

Abstract: Disclosed is a photosensitive resin composition. The composition comprises [A] an alkali-soluble resin, [B] a photoactive compound and [C] a solvent. The alkali-soluble resin is a copolymer including at least one structural unit with an aziridine group. The composition exhibits good storage stability, high sensitivity, high UV transmittance, high residual film ratio, improved coating uniformity and excellent pattern-forming properties. Further disclosed is an organic insulating film formed using the composition. The organic insulating film has excellent resistance to solvents and chemicals.

Abstract: A photosensitive resin composition is provided. The composition includes an acrylic copolymer, a photoacid generator and a solvent. The acrylic copolymer includes structural units of Formulae 1, 2, 3 and 4, which are described in the specification. The composition exhibits excellent performance characteristics in terms of mechanical and thermal properties, transmittance, insulating properties, transparency, developability, residual film ratio, heat resistance, flatness and the like. Particularly, the use of the composition facilitates the formation of a pattern as an interlayer insulating film. The composition can also be used to produce a thick film with high transmittance. Therefore, the composition is effectively used as a material for an interlayer insulating layer in LCD fabrication processes. An organic insulating film produced using the composition is also provided.

Abstract: A photosensitive resin composition for forming column spacers for a liquid crystal display device is provided. The composition includes an alkali-soluble resin, a reactive unsaturated compound, a photoinitiator and a solvent. The alkali-soluble resin includes structural units represented by Formulae 1, 2 and 3, which are described in the specification. A pattern formed using the composition is also provided. The pattern shows improved thickness uniformity, good developability without leaving any residual image, superior solvent resistance and high recovery rate.

Abstract: Disclosed is a pigment dispersion composition for producing a color filter. The pigment dispersion composition comprises a pigment, a binder resin, a dispersant and a solvent. The pigment is a blue anthraquinone pigment and is pretreated with a water-soluble inorganic salt and a wetting agent. The pigment dispersion composition can be used to produce a color filter for a color imaging device with good color separation and high transmittance.

Abstract: A photosensitive resin composition for a color filter of an image sensor is disclosed. The photosensitive resin composition is developable with an aqueous alkaline solution. The photosensitive resin composition can include (a) an acrylic resin, (b) a photopolymerizable acrylic monomer, (c) a photopolymerization initiator, (d) a pigment dispersion and (e) a solvent wherein the acrylic resin is a copolymer of ethylenically unsaturated monomers and contains 10 to 40 mole % of an ethylenically unsaturated monomer having a carboxyl group. Since the photosensitive resin composition can enable the formation of ultra-fine pixels, it can be used to produce color filters of high-resolution image sensors.

Abstract: Provided herein are one-solution type thermosetting resin compositions that may be useful to form protective films for color filters used in liquid crystal displays or image sensors. According to some embodiments, the resin compositions may include a self-curable copolymer and an epoxy compound. The protective films may exhibit desirable flatness, adhesiveness, transmittance, heat resistance and chemical resistance. Also provided are methods of forming a film on a substrate, and substrates having a film formed thereon. In addition, provided herein are color filters including a film formed from a composition according to an embodiment of the invention, and liquid crystal displays and image sensors including such color filters.

Abstract: Metal CMP slurry compositions having relatively low chemical etch rate and relatively high mechanical polishing rate characteristics are provided. The relatively high mechanical polishing rate characteristics are achieved using relatively high concentrations of mechanical abrasive (e.g., ?8 wt %) in combination with sufficient quantities of a wetting agent to inhibit micro-scratching of underlying surfaces (e.g., insulating layers, conductive vias, . . . ) being polished. The slurry compositions also include a highly stable metal-propylenediaminetetraacetate (M-PDTA) complex, which may operate to inhibit metal-oxide re-adhesion on the metal surface being polished and/or inhibit oxidation of the metal surface by chelating with the surface.

Abstract: Disclosed herein are slurry compositions for use in CMP(chemical mechanical polishing) process of metal wiring in manufacturing semiconductor devices, comprising a peroxide, an inorganic acid, a propylenediaminetetraacetate(PDTA)-metal complex, a carboxylic acid, a metal oxide powder, and de-ionized water, wherein the PDTA-metal complex plays a major role in improving overall polishing performance and reproducibility thereof by preventing abraded tungsten oxide from readhesion onto the polished surface, as well as in improving the dispersion stability of the slurry composition.

Abstract: Disclosed herein are slurry compositions for use in CMP (chemical mechanical polishing) process of metal wiring in manufacturing semiconductor devices, comprising a peroxide, an inorganic acid, a propylenediaminetetraacetate (PDTA)-metal complex, a carboxylic acid, a metal oxide powder, and de-ionized water, wherein the PDTA-metal complex plays a major role in improving overall polishing performance and reproducibility thereof by preventing abraded tungsten oxide from readhesion onto the polished surface, as well as in improving the dispersion stability of the slurry composition.

Abstract: There is disclosed a process for preparing a metal oxide CMP slurry suitable for semiconductor devices, wherein a mixture comprising 1 to 50 weight % of a metal oxide and 50 to 99 weight % of water is mixed in a pre-mixing tank, transferred to a dispersion chamber with the aid of a transfer pump, allowed to have a flow rate of not less than 100 m/sec by pressurization with a high pressure pump, and subjected to counter collision for dispersion through two orifices in the dispersion chamber. The slurry has particles which are narrow in particle size distribution, showing an ultrafine size ranging from 30 to 500 nm. Also, the slurry is not polluted at all during its preparation and shows no tailing phenomena, so that it is preventive of &mgr;-scratching. Therefore, it can be used in the planarization for shallow trench isolation, interlayer dielectrics and inter metal dielectrics through a CMP process.

Abstract: The present invention relates to a polishing composition comprising 30 to 99 wt % of deionized water, 0.1 to 50 wt % of powder of metallic oxide and 0.01 to 20 wt % of cyclic amine. This polishing composition can be used in a chemical mechanical polishing of thin films in integrated circuit manufacturing and has an effect of minimizing the occurrence of microscratches on the thin film after polishing. Thereby it can be applied to the manufacturing process of highly integrated circuits such as Shallow Trench Isolation.

Abstract: Disclosed is a polishing composition which comprises an Al2O3/SiO2 composite-based metal oxide powder, deionized water and an additive, said metal oxide powder comprising an Al2O3/SiO2 composite as an essential component. The polishing composition is superior in removal rate and free of causing microscratches after polishing and thus, suitable for use in the global planarization of device wafer surfaces.

Abstract: Disclosed is a process for preparing metal oxide slurries suitable for the chemical mechanical polishing (CMP) of semiconductor devices. A suspension of metal oxide in water is dispersed at a predetermined pressure through an orifice of a dispersion chamber while two intensifier pumps are used to maintain the pressure applied to the dispersion chamber constantly, resulting in restraining or minimizing the generation of macro particles as large as or larger than 1 &mgr;m. The metal oxide slurries are uniform in particle size with narrow particle size distribution and show excellent polishing performance with a significant reduction in the occurrence frequency of microscratches, so that they are suitable for CMP of ultra-integrated semiconductor devices.