Abstract: An antenna assembly, a wireless-communication-enabled device and an intelligent home or office appliance including such antenna assembly. The antenna assembly includes an antenna including an antenna body and a feeder, and at least one functional module arranged to operate with a function different from that provided by the antenna; wherein the at least one functional module includes at least one electrical connection module arranged to connects with an external electrical connector.

Abstract: An antenna assembly, a wireless-communication-enabled device and an intelligent home or office appliance including such antenna assembly. The antenna assembly includes an antenna including an antenna body and a feeder, and at least one functional module arranged to operate with a function different from that provided by the antenna.

Abstract: A container assembly having a container, a lid having a spout, and a partition to separate the container into multiple subcompartments. The partition has a flexible edge which is in contact with an inner surface of the lid. When the lid rotates about the container, the flexible edge is biased against the lid and is capable of being deformed.

Abstract: An antenna assembly, a wireless-communication-enabled device and an intelligent home or office appliance including such antenna assembly. The antenna assembly includes an antenna including an antenna body and a feeder, and at least one functional module arranged to operate with a function different from that provided by the antenna.

Abstract: An antenna assembly, a wireless-communication-enabled device and an intelligent home or office appliance including such antenna assembly. The antenna assembly includes an antenna including an antenna body and a feeder, and at least one functional module arranged to operate with a function different from that provided by the antenna; wherein the at least one functional module includes at least one electrical connection module arranged to connects with an external electrical connector.

Abstract: Methods of operating a memory include increasing a voltage applied to a first access line from a first voltage to a second voltage higher than the first voltage while applying the first voltage to a second access line, the first access line coupled to a target memory cell of the programming operation and an unselected memory cell not targeted for the programming operation, and the second access line coupled to memory cells not targeted for the programming operation. After increasing the voltage applied to the first access line, increasing the voltage applied to the first access line from the second voltage to a third voltage higher than the second voltage and increasing a voltage applied to the second access line from the first voltage to a fourth voltage higher than the first voltage and lower than the third voltage.

Abstract: A power amplifier includes an input for receiving an RF signal to be amplified; at least one power amplification circuit module in electrical connection with the input for amplifying the RF signal; at least one biasing circuit in electrical connection with the power amplification circuit for compensating the distortion of the RF signal so as to amplify the RF signal substantially linearly, and an output arranged to output the amplified RF signal.

Abstract: Methods of operating a memory include increasing a voltage applied to a first access line from a first voltage to a second voltage higher than the first voltage while applying the first voltage to a second access line, the first access line coupled to a target memory cell of the programming operation and an unselected memory cell not targeted for the programming operation, and the second access line coupled to memory cells not targeted for the programming operation. After increasing the voltage applied to the first access line, increasing the voltage applied to the first access line from the second voltage to a third voltage higher than the second voltage and increasing a voltage applied to the second access line from the first voltage to a fourth voltage higher than the first voltage and lower than the third voltage.

Abstract: Methods of operating a memory device during a programming operation, and memory devices so configured, including increasing a voltage applied to a selected access line from a first voltage while maintaining a voltage applied to an unselected access line at the first voltage. The selected access line is connected to a control gate of a target memory cell of a string of series-connected memory cells that is targeted for programming during the programming operation and the unselected access line is connected to a control gate of a second memory cell of the string of series-connected memory cells that is untargeted for programming during the programming operation. After the voltage applied to the selected access line reaches a second voltage, the methods further include increasing the voltage applied to the unselected access line from the first voltage while increasing the voltage applied to the selected access line from the second voltage.

Abstract: Methods of operating a memory device during a programming operation, and memory devices so configured, including increasing a voltage applied to a selected access line from a first voltage while maintaining a voltage applied to an unselected access line at the first voltage. The selected access line is connected to a control gate of a target memory cell of a string of series-connected memory cells that is targeted for programming during the programming operation and the unselected access line is connected to a control gate of a second memory cell of the string of series-connected memory cells that is untargeted for programming during the programming operation. After the voltage applied to the selected access line reaches a second voltage, the methods further include increasing the voltage applied to the unselected access line from the first voltage while increasing the voltage applied to the selected access line from the second voltage.

Abstract: In an example, a method may include increasing a voltage applied to an unprogrammed first memory cell in a string of series-connected memory cells from a first voltage to a second voltage while a voltage applied to second memory cells in the string of series-connected memory cells is at the first voltage and increasing the voltage applied to the second memory cells from the first voltage to a pass voltage concurrently with increasing the voltage applied to the unprogrammed first memory cell from the second voltage to a program voltage.

Abstract: An air core reactor (47) including a plurality of concentric conductor winding packages (44, 46) wherein a force (F+) generated by the interaction of current (+) flowing through one package and a magnetic field (42) generated by the reactor is out of phase (F?) with a force generated in another package, thereby effectively mitigating audible sound generated by power operation of the reactor. In one embodiment (FIG. 3), the out of phase force may be generated when at least one winding (38c, 37d) of one package (38) is configured to conduct a current (?) that is at least 10 degrees out of phase with a current (+) conducted by another package (40) or other windings (38a, 38b) of the reactor (36).

Abstract: A power amplifier includes an input for receiving an RF signal to be amplified; at least one power amplification circuit module in electrical connection with the input for amplifying the RF signal; at least one biasing circuit in electrical connection with the power amplification circuit for compensating the distortion of the RF signal so as to amplify the RF signal substantially linearly, and an output arranged to output the amplified RF signal.

Abstract: An air core reactor (47) including a plurality of concentric conductor winding packages (44, 46) wherein a force (F+) generated by the interaction of current (+) flowing through one package and a magnetic field (42) generated by the reactor is out of phase (F?) with a force generated in another package, thereby effectively mitigating audible sound generated by power operation of the reactor. In one embodiment (FIG. 3), the out of phase force may be generated when at least one winding (38c, 37d) of one package (38) is configured to conduct a current (?) that is at least 10 degrees out of phase with a current (+) conducted by another package (40) or other windings (38a, 38b) of the reactor (36).

Abstract: A container assembly having a container, a lid having a spout, and a partition to separate the container into multiple subcompartments. The partition has a flexible edge which is in contact with an inner surface of the lid. When the lid rotates about the container, the flexible edge is biased against the lid and is capable of being deformed.