Abstract: An apparatus for anchoring a rod to a bone fastener in a spine stabilization system. A first resilient insert may have two deflectable arms and a first channel formed therein. A second resilient insert may have two deflectable arms and a second channel formed therein. A cylindrical body may have a passage, wherein the first resilient insert and the second resilient insert have a width greater than the inner diameter of the cylindrical body when the first resilient insert is in a neutral state. Advancement of the first resilient insert or the second resilient insert into the passage deflects the two deflectable arms inward, causing the width of the first or second channel to decrease, and inhibiting the first resilient insert or the second resilient insert from moving relative to the cylindrical body.

Abstract: Out-of-order reconstruction of a RAID storage device at a replacement storage device enables the replacement storage device to execute I/O for reconstructed regions during reconstruction of the replacement storage device. In one embodiment, the failed storage device is analyzed to find recoverable information, which is copied to the replacement storage device to reduce the need for reconstruction. In another embodiment, the priority for region's reconstruction is increased upon detection of an I/O to the region. The I/O is queued until reconstruction of the region and then executed after reconstruction of that region so that I/O at the region need not be repeated during reconstruction of the remainder of the replacement storage device.

Abstract: MEMS oscillators, which include a silicon-type, in particular piezoresistive resonators, can be used to provide a fixed, stable output frequency. Silicon has a natural temperature dependence of Young's modulus, therefore, as ambient temperature changes and/or the piezoresistive resonator is powered, the resonator temperature changes, and the resonance frequency of the resonator drifts. In order to account for the temperature drift of the piezoresistive resonator, the piezoresistive resonator itself is used as a temperature sensor. The relative resistance change of the piezoresistive resonator depends only on the relative temperature change and material property of the resonator. Therefore, an accurate temperature can be sensed directly on the piezoresistive resonator. The temperature drift information is provided to a frequency adjuster, which corrects the output frequency of the circuit.

Abstract: A safety switching device for the failsafe shutdown of an electrical load has at least one input circuit for receiving an input signal from a signaling device which signals a safety-related state, an evaluation and control unit for evaluating the input signal, and at least one output circuit for outputting an output signal. The safety switching device further has at least one switching element for interrupting a current supply path to the load in dependence on the input signal. The input circuit and the output circuit are joined at a device connector so that the device connector can selectively be used as an input for receiving the input signal or as an output for outputting the output signal. The input circuit has a test switch which is coupled to the evaluation and control unit which is designed for selectively suppressing the input signal using the test switch.

Abstract: MEMS oscillators, which include a silicon-type, in particular piezoresistive resonators, can be used to provide a fixed, stable output frequency. Silicon has a natural temperature dependence of Young's modulus, therefore, as ambient temperature changes and/or the piezoresistive resonator is powered, the resonator temperature changes, and the resonance frequency of the resonator drifts. In order to account for the temperature drift of the piezoresistive resonator, the piezoresistive resonator itself is used as a temperature sensor. The relative resistance change of the piezoresistive resonator depends only on the relative temperature change and material property of the resonator. Therefore, an accurate temperature can be sensed directly on the piezoresistive resonator. The temperature drift information is provided to a frequency adjuster, which corrects the output frequency of the circuit.

Abstract: An apparatus for anchoring a rod to a bone fastener in a spine stabilization system. A first resilient insert may have two deflectable arms and a first channel formed therein. A second resilient insert may have two deflectable arms and a second channel formed therein. A cylindrical body may have a passage, wherein the first resilient insert and the second resilient insert have a width greater than the inner diameter of the cylindrical body when the first resilient insert is in a neutral state. Advancement of the first resilient insert or the second resilient insert into the passage deflects the two deflectable arms inward, causing the width of the first or second channel to decrease, and inhibiting the first resilient insert or the second resilient insert from moving relative to the cylindrical body.

Abstract: A delivery system for stabilizing a catheter shaft across an aortic arch can include one or more stabilizing members configured to fix or stabilize the position of the catheter relative to the aortic arch of a patient.

Abstract: An apparatus for anchoring a rod to a bone fastener in a spine stabilization system. A first resilient insert may have two deflectable arms and a first channel formed therein. A second resilient insert may have two deflectable arms and a second channel formed therein. A cylindrical body may have a passage, wherein the first resilient insert and the second resilient insert have a width greater than the inner diameter of the cylindrical body when the first resilient insert is in a neutral state. Advancement of the first resilient insert or the second resilient insert into the passage deflects the two deflectable arms inward, causing the width of the first or second channel to decrease, and inhibiting the first resilient insert or the second resilient insert from moving relative to the cylindrical body.

Abstract: A non-volatile memory chip package is prepared for surface mounting to a substrate in a solder reflow process by programming erased blocks to higher threshold voltage levels, to improve data retention for blocks which are preloaded with content, such as by an electronic device manufacturer. Following the surface mounting, the previously-erased blocks are returned to the erased state. The threshold voltage of storage elements of the preloaded blocks can change during the surface mounting process due to a global charge effect phenomenon. The effect is most prominent for higher state storage elements which are surrounded by erased blocks, in a chip for which the wafer backside was thinned and polished. The erased blocks can be programmed using a single program pulse without performing a verify operation, as a wide threshold voltage distribution is acceptable.

Abstract: A spine stabilization system having collars, resilient inserts and pins for coupling a rod to bone fasteners. A bone fastener may be advanced into a vertebral body. A first collar having a set of deflectable arms and a channel in a first end and an opening in the second end recessing to form a cavity may be positioned with the head of the bone fastener in the cavity. A rod may be advanced into the channel in the first end of each collar. The deflectable arms may have a set of recessed portions. The recessed portions may have an angular or arcuate profile. A resilient insert may be advanced into the collar and positioned in the recessed portions, with the bottom surface of the resilient insert in contact with the rod. A pin may be inserted in the resilient insert to inhibit removal of the resilient insert.

Abstract: Out-of-order reconstruction of a RAID storage device at a replacement storage device enables the replacement storage device to execute I/O for reconstructed regions during reconstruction of the replacement storage device. In one embodiment, the failed storage device is analyzed to find recoverable information, which is copied to the replacement storage device to reduce the need for reconstruction. In another embodiment, the priority for region's reconstruction is increased upon detection of an I/O to the region. The I/O is queued until reconstruction of the region and then executed after reconstruction of that region so that I/O at the region need not be repeated during reconstruction of the remainder of the replacement storage device.

Abstract: The invention relates to a pointing device and a method for processing signals from such a pointing device, said device comprising a base and an actuator movable with respect to the base, and a detector, said detector adapted for providing at least first and second positional signals indicating a position of the actuator with respect to the base along corresponding first and second axes, wherein said signal processing method comprises the steps of converting the at least two positional signals into a polar coordinate signal comprising a magnitude signal, and thresholding the magnitude signal of the polar coordinate signal to provide a thresholded magnitude signal. In an embodiment the method further comprising the step of applying a conversion curve to the thresholded magnitude signal to produce a velocity magnitude signal.

Abstract: Mobile ion diffusion causes a shift in the threshold voltage of non-volatile storage elements in a memory chip, such as during an assembly process of the memory chip. To reduce or avoid such shifts, a coating can be applied to a printed circuit board substrate or a leader frame to which the memory chip is surface mounted. An acrylic resin coating having a thickness of about 10 ?m may be used. A memory chip is attached to the coating using an adhesive film. Stacked chips may be used as well. Another approach provides metal barrier traces over copper traces of the printed circuit board, within a solder mask layer. The metal barrier traces are fabricated in the same pattern as the copper traces but are wider so that they at least partially envelop and surround the copper traces. Corresponding apparatuses and fabrication processes are provided.

Abstract: A non-volatile memory chip package is prepared for surface mounting to a substrate in a solder reflow process by programming erased blocks to higher threshold voltage levels, to improve data retention for blocks which are preloaded with content, such as by an electronic device manufacturer. Following the surface mounting, the previously-erased blocks are returned to the erased state. The threshold voltage of storage elements of the preloaded blocks can change during the surface mounting process due to a global charge effect phenomenon. The effect is most prominent for higher state storage elements which are surrounded by erased blocks, in a chip for which the wafer backside was thinned and polished. The erased blocks can be programmed using a single program pulse without performing a verify operation, as a wide threshold voltage distribution is acceptable.

Abstract: Mobile ion diffusion causes a shift in the threshold voltage of non-volatile storage elements in a memory chip, such as during an assembly process of the memory chip. To reduce or avoid such shifts, a coating can be applied to a printed circuit board substrate or a leader frame to which the memory chip is surface mounted. An acrylic resin coating having a thickness of about 10 ?m may be used. A memory chip is attached to the coating using an adhesive film. Stacked chips may be used as well. Another approach provides metal barrier traces over copper traces of the printed circuit board, within a solder mask layer. The metal barrier traces are fabricated in the same pattern as the copper traces but are wider so that they at least partially envelop and surround the copper traces. Corresponding apparatuses and fabrication processes are provided.

Abstract: A method of making a two terminal nonvolatile memory cell includes forming a first electrode, forming a charge storage medium, forming a resistive element, and forming a second electrode. The charge storage medium and the resistive element are connected in parallel between the first and the second electrodes, and a presence or absence of charge being stored in the charge storage medium affects a resistivity of the resistive element.

Abstract: A two terminal nonvolatile memory cell includes a first electrode, a second electrode, a charge storage medium, and a resistive element. The charge storage medium and the resistive element are connected in parallel between the first and the second electrodes. A presence or absence of charge being stored in the charge storage medium affects a resistivity of the resistive element.

Abstract: A method of making a two terminal nonvolatile memory cell includes forming a first electrode, forming a charge storage medium, forming a resistive element, and forming a second electrode. The charge storage medium and the resistive element are connected in parallel between the first and the second electrodes, and a presence or absence of charge being stored in the charge storage medium affects a resistivity of the resistive element.

Abstract: A louvered shutter assembled from pre-finished parts using axle pins for louver rotation and pin members mounted in the louvers distal of the axle pins for connection to tilt bar by a snap together connection and for transmitting force to inducement rotational in the louvers and the tilt bar being shaped to pass between the shutter frame and the louvers for substantial flush relationship in closed position and allowing clear view through the louvers in their open position.

Abstract: A nonvolatile memory array includes a grid of word lines WL1, . . . ,WL6 and bit lines BL1, . . . ,BL8. Of a plurality of memory cells 210, each memory cell is located at an intersection region of one of the word lines and one of the bit lines. A read/write circuit 280 for reading/writing a data word including a plurality of bits is operative to map each pair of sequential bits of the data word to a respective pair of memory cells located at intersection regions of both a different word line and a different bit line.