Abstract: The invention provides a photoelectric conversion element including a photoelectric conversion film excellent in vapor deposition suitability and exhibiting excellent photoelectric conversion efficiency in a case where the photoelectric conversion film is a thin film, an optical sensor, an imaging element, and a compound. The photoelectric conversion element of the embodiment of the invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1).

Abstract: An object of the present invention is to provide a thermoelectric conversion element which includes a p-type thermoelectric conversion layer and an n-type thermoelectric conversion layer, has excellent power generation capacity and durability, and inhibits a variation in power generation capacity between lots.

Abstract: The present invention provides a photoelectric conversion element exhibiting excellent responsiveness, and excellent photoelectric conversion efficiency in a case where the photoelectric conversion film is a thin film, an optical sensor, an imaging element which include the photoelectric conversion element, and a compound. The photoelectric conversion element of the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1) and having a structure represented by Formula (2).

Abstract: An object of the present invention is to provide a semiconductor layer (n-type semiconductor layer) which demonstrate an excellent thermoelectric conversion performance and exhibits n-type characteristics. Another object of the present invention is to provide a thermoelectric conversion layer formed of the n-type semiconductor layer and a composition for forming an n-type semiconductor layer. Still another object of the present invention is to provide a thermoelectric conversion element, which has the thermoelectric conversion layer as an n-type thermoelectric conversion layer, and a thermoelectric conversion module. The n-type semiconductor layer of the embodiment of the present invention contains a nanocarbon material and an onium salt represented by a specific structure.

Abstract: An object of the present invention is to provide an n-type thermoelectric conversion layer, which has a high power factor and exhibits excellent performance stability, a thermoelectric conversion element including the n-type thermoelectric conversion layer, and a composition for forming an n-type thermoelectric conversion layer used in the n-type thermoelectric conversion layer. The n-type thermoelectric conversion layer of the present invention contains carbon nanotubes and an amine compound which is represented by General Formula (1) or (2) and has a C log P value of 2.0 to 8.2.

Abstract: The invention provides a photoelectric conversion element including a photoelectric conversion film excellent in vapor deposition suitability and exhibiting excellent photoelectric conversion efficiency in a case where the photoelectric conversion film is a thin film, an optical sensor, an imaging element, and a compound. The photoelectric conversion element of the embodiment of the invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1).

Abstract: A thermoelectric conversion layer contains carbon nanotubes and a surfactant, and in an upper portion and a lower portion and/or a side face end surface and a center, a mass ratio obtained by dividing the carbon nanotubes by the surfactant is higher in the upper portion and/or the end surface than in the other portions. A layer which contains carbon nanotubes and a surfactant and will become a thermoelectric conversion element is formed, the layer is washed with a washing agent which dissolves the surfactant but does not dissolve the carbon nanotubes. Accordingly, provided is a thermoelectric conversion element and a thermoelectric conversion module, each having not only high adhesiveness between the substrate and the thermoelectric conversion layer but also excellent thermoelectric conversion performance; and methods for manufacturing the thermoelectric conversion element and the thermoelectric conversion module.

Abstract: The present invention provides an n-type thermoelectric conversion layer, which has excellent electric conductivity and thermoelectromotive force and is inhibited from experiencing a change of the thermoelectromotive force even in a high-temperature environment, a thermoelectric conversion element having the n-type thermoelectric conversion layer, and a composition for forming an n-type thermoelectric conversion layer. A thermoelectric conversion element of the present invention has an n-type thermoelectric conversion layer and a p-type thermoelectric conversion layer electrically connected to the n-type thermoelectric conversion layer, in which the n-type thermoelectric conversion layer contains carbon nanotubes and a compound containing a repeating unit represented by Formula (1). In Formula (1), L1 represents a divalent hydrocarbon group. n represents an integer of equal to or greater than 2. X represents —O—, —CH(OH)—, —S—, —OC(?O)O—, —C(?O)—, —OC(?O)—, or a divalent group containing an amide group.

Abstract: A photoelectric conversion element includes a first electrode that has a photosensitive layer containing a light absorbing agent on a conductive support; and a second electrode that is opposite to the first electrode, in which the light absorbing agent contains a perovskite compound, and a compound represented by Formula (A-0), (G)p-L, ??Formula (A-0) in the formula, G represents a group or a salt such as —P(?O)(ORa)2 and —P(?O)(O?Ya+)2; Ra represents a hydrogen atom or a substituent; Ya represents a counter salt; p is an integer of 1 or more; and L represents an aliphatic hydrocarbon group not having an amino group.

Abstract: The present invention provides a photoelectric conversion element exhibiting excellent responsiveness, and excellent dark current characteristics in a case of high-speed photoelectric conversion film formation, an optical sensor, an imaging element, and a compound which include the photoelectric conversion element. The photoelectric conversion element of the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1), and an n-type organic semiconductor having a predetermined structure.

Abstract: The present invention provides a photoelectric conversion element exhibiting excellent responsiveness, and excellent photoelectric conversion efficiency in a case where the photoelectric conversion film is a thin film, an optical sensor, an imaging element which include the photoelectric conversion element, and a compound. The photoelectric conversion element of the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1) and having a structure represented by Formula (2).

Abstract: An object of the present invention is to provide a semiconductor layer (n-type semiconductor layer) which demonstrate an excellent thermoelectric conversion performance and exhibits n-type characteristics. Another object of the present invention is to provide a thermoelectric conversion layer formed of the n-type semiconductor layer and a composition for forming an n-type semiconductor layer. Still another object of the present invention is to provide a thermoelectric conversion element, which has the thermoelectric conversion layer as an n-type thermoelectric conversion layer, and a thermoelectric conversion module. The n-type semiconductor layer of the embodiment of the present invention contains a nanocarbon material and an onium salt represented by a specific structure.

Abstract: An object of the present invention is to provide a thermoelectric conversion layer having excellent thermoelectric conversion performances (particularly, a power factor and a figure of merit Z). Another object of the present invention is to provide a composition for forming a thermoelectric conversion layer that is used for forming the thermoelectric conversion layer, and a thermoelectric conversion element and a thermoelectric conversion module including the thermoelectric conversion layer.

Abstract: An object of the present invention is to provide a semiconductor layer (p-type semiconductor layer) which demonstrate an excellent thermoelectric conversion performance and exhibits p-type characteristics. Another object of the present invention is to provide a thermoelectric conversion layer formed of the p-type semiconductor layer and a composition for forming a p-type semiconductor layer. Still another object of the present invention is to provide a thermoelectric conversion element, which has the thermoelectric conversion layer as a p-type thermoelectric conversion layer, and a thermoelectric conversion module. The p-type semiconductor layer of the embodiment of the present invention contains a nanocarbon material and at least one kind of onium salt selected from the group consisting of compounds represented by Formula (1) to Formula (4).

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.

Abstract: Provided are an organic transistor with high carrier mobility having a semiconductor active layer containing a compound which is represented by the following formula and has a molecular weight of equal to or less than 3,000, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating solution for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for manufacturing an organic semiconductor material.

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.

Abstract: An object of the present invention is to provide a thermoelectric conversion element which includes a p-type thermoelectric conversion layer and an n-type thermoelectric conversion layer, has excellent power generation capacity and durability, and inhibits a variation in power generation capacity between lots.

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.

Abstract: An object of the present invention is to provide a thermoelectric conversion element having excellent thermoelectric conversion performance and excellent high-temperature durability, a method for manufacturing the thermoelectric conversion element, a thermoelectric conversion module, and a method for manufacturing the thermoelectric conversion module.