Abstract: An object of the present invention is to provide a thermoelectric conversion layer, which has a high power factor and a low thermal conductivity and exhibits the characteristics of an n-type excellently maintaining performance stability even being exposed to a high temperature for a long period of time, a thermoelectric conversion element having the thermoelectric conversion layer as an n-type thermoelectric conversion layer, and a composition for forming a thermoelectric conversion layer used for forming the thermoelectric conversion layer. The thermoelectric conversion layer of the present invention contains a carbon nanotube-containing n-type thermoelectric conversion material and a hydrogen bonding resin.

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.

Abstract: An object of the present invention is to provide an n-type thermoelectric conversion layer, which has a high power factor and exhibits excellent performance stability, a thermoelectric conversion element including the n-type thermoelectric conversion layer, and a composition for forming an n-type thermoelectric conversion layer used in the n-type thermoelectric conversion layer. The n-type thermoelectric conversion layer of the present invention contains carbon nanotubes and an amine compound which is represented by General Formula (1) or (2) and has a ClogP value of 2.0 to 8.2.

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.

Abstract: An organic electroluminescent element including a substrate, a pair of electrodes including an anode and a cathode, disposed on the substrate, and at least one organic layer including a light emitting layer, disposed between the electrodes, in which a compound represented by the following formula (I) is contained in any layer of the at least one organic layer. The organic electroluminescent element has high luminous efficiency and a strong effect of improving the durability by driving aging: wherein X, A1, A2, A3, A4, and R1 to R8 are as defined herein.

Abstract: A thermoelectric conversion element (1) having, on a substrate (12), a first electrode (13), a thermoelectric conversion layer (14), and a second electrode (15), wherein a nano conductive material and a low band gap material are contained in the thermoelectric conversion layer (14); an article for thermoelectric power generation and a power supply for a sensor using the thermoelectric conversion element (1); and a thermoelectric conversion material containing the nano conductive material and the low band gap material.

Abstract: An organic electroluminescent element using a compound represented by the following general formula emits dark blue light and has a small change in the chromaticity during luminance modulation: wherein each of R1 to R8 represents a hydrogen atom or a substituent; A1 to A4 represent CR31 or N; L and X each independently represent any one of CR32R33, NR34, O, S, and SiR35R36; and each of R31 to R36 represents a hydrogen atom or a substituent.

Abstract: The present invention provides an n-type thermoelectric conversion layer, which has excellent electric conductivity and thermoelectromotive force and is inhibited from experiencing a change of the thermoelectromotive force even in a high-temperature environment, a thermoelectric conversion element having the n-type thermoelectric conversion layer, and a composition for forming an n-type thermoelectric conversion layer. A thermoelectric conversion element of the present invention has an n-type thermoelectric conversion layer and a p-type thermoelectric conversion layer electrically connected to the n-type thermoelectric conversion layer, in which the n-type thermoelectric conversion layer contains carbon nanotubes and a compound containing a repeating unit represented by Formula (1). ?L1-X?n ??Formula (1) In Formula (1), L1 represents a divalent hydrocarbon group. n represents an integer of equal to or greater than 2.

Abstract: A thermoelectric conversion layer contains carbon nanotubes and a surfactant, and in an upper portion and a lower portion and/or a side face end surface and a center, a mass ratio obtained by dividing the carbon nanotubes by the surfactant is higher in the upper portion and/or the end surface than in the other portions. A layer which contains carbon nanotubes and a surfactant and will become a thermoelectric conversion element is formed, the layer is washed with a washing agent which dissolves the surfactant but does not dissolve the carbon nanotubes. Accordingly, provided is a thermoelectric conversion element and a thermoelectric conversion module, each having not only high adhesiveness between the substrate and the thermoelectric conversion layer but also excellent thermoelectric conversion performance; and methods for manufacturing the thermoelectric conversion element and the thermoelectric conversion module.

Abstract: A thermoelectric conversion element (1) having, on a substrate (12), a first electrode (13), a thermoelectric conversion layer (14), and a second electrode 15, wherein a nano conductive material and a low band gap material are contained in the thermoelectric conversion layer (14); an article for thermoelectric power generation and a power supply for a sensor using the thermoelectric conversion element (1); and a thermoelectric conversion material containing the nano conductive material and the low band gap material.

Abstract: A photoelectric conversion element, having: an electrically-conductive support; a photoconductor layer having a semiconductor fine-particle layer adsorbed a dye; a charge transfer layer containing an electrolyte; and a counter electrode; which are provided on one side of the support in this order, in which the dye has at least one terdentate ligand having at least one acidic group; at least one ligand coordinating to a metal atom M has an sp2 carbon atom; a cyclic group binds to the sp2 carbon atom; a specific substituent R is substituted at an atom of ?- or ?-position to the atom of the cyclic group directly binding to the sp2 carbon atom; and with the metal atom M, an atom G1 of the ?- or ?-position, and an atom G2 of the substituent R, an angle ? (?MG1G2) is 150° or less.

Abstract: Provided are an organic transistor with high carrier mobility having a semiconductor active layer containing a compound which is represented by the following formula and has a molecular weight of equal to or less than 3,000, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating solution for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for manufacturing an organic semiconductor material.

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.

Abstract: Provided are the following: a thermoelectric conversion element including, on a substrate, a first electrode, a thermoelectric conversion layer and a second electrode, in which the thermoelectric conversion layer contains an electroconductive nanomaterial having an average length in the major axis direction of at least 5 nm and a polymer compound having a repeating unit represented by the following Formula (1); an article for thermoelectric power generation and a power source for sensors, which use this thermoelectric conversion element; and a thermoelectric conversion material for forming the thermoelectric conversion layer, the thermoelectric conversion material containing the electroconductive nanomaterial described above and a polymer compound having a repeating unit represented by the following Formula (1).

Abstract: A photoelectric conversion element includes a transparent conductive film, a conductive film, and a photoelectric conversion layer and an electron-blocking layer disposed between the transparent conductive film and the conductive film. The photoelectric conversion layer includes a condensed polycyclic hydrocarbon which contains at least 5 benzene rings, of which a total number of rings is 7 or more and which contains no carbonyl group. The electron-blocking layer includes a compound A having a residue after removal of at least one group of Ra1 to Ra9 from a compound represented by general formula (A) and having a glass transition point (Tg) of 200° C. or more. The photoelectric conversion element exhibits high photoelectric conversion efficiency and low dark current characteristics even after heating treatment, and can be manufactured with high productivity.

Abstract: There is provided a compound represented by a specific formula, which has an absorption maximum at 400 nm or more and less than 720 nm in a UV-visible absorption spectrum, wherein a molar extinction coefficient is 10,000 mol?1·l·cm?1 or more at the absorption maximum wavelength, and a difference between a melting point and a deposition temperature (a melting point?a deposition temperature) is 31° C. or more.

Abstract: There is provided an organic non-linear optical material containing a compound represented by the Formula (I), and the Formula (I) is defined as herein, and a polymer binder: and an optical element comprising the organic non-linear optical material, and an optical modulator comprising the organic non-linear optical material, and a compound represented by the Formula (I) and the formula (I) is defined as herein.

Abstract: A thermoelectric conversion element 1 having, on a substrate 12, a first electrode 13, a thermoelectric conversion layer 14, and a second electrode 15, wherein a nano conductive material and a low band gap material are contained in the thermoelectric conversion layer 14; an article for thermoelectric power generation and a power supply for a sensor using the thermoelectric conversion element 1; and a thermoelectric conversion material containing the nano conductive material and the low band gap material.

Abstract: A photoelectric element includes a conductive layer, an organic photoelectric layer, a blocking layer and a transparent conductive layer, the organic photoelectric layer contains a p type organic photoelectric material having a glass transition temperature of 100° C. or higher and forms an amorphous layer, and the blocking layer contains a blocking material having a glass transition temperature of 140° C. or higher.

Abstract: A photoelectric conversion device comprising an electrically conductive film, an organic photoelectric conversion film, and a transparent electrically conductive film, wherein the organic photoelectric conversion film contains a compound represented by the following formula (1) and an n-type organic semiconductor: wherein each of R1 and R2 independently represents a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group or an unsubstituted heteroaryl group, each of R3 to R11 independently represents a hydrogen atom or a substituent provided that an acidic group is excluded, m represents 0 or 1, n represents an integer of 0 or more, R1 and R2, R3 and R4, R3 and R5, R5 and R6, R6 and R8, R7 and R8, R7 and R9, or R10 and R11 may be combined each other to form a ring, and when n is an integer of 2 or more, out of a plurality of R7's and R8's, a pair of R7's, a pair of R8's, or a pair of R7 and R8 may be combined each other to form a ring.