Abstract: A first tungsten silicide layer relatively rich in silicon is formed on an object by using a process gas having a phosphorus atom-containing gas added thereto, and a second tungsten silicide layer relatively rich in tungsten is formed on the first tungsten silicide layer, so that a tungsten silicide film is formed. The addition amount of the phosphorus atom-containing gas to the process gas is 0.02 to 0.2% by volume “in terms of a phosphine gas”.

Abstract: Pre-coating films are formed in a pretreatment by supplying first film-forming gases into a process chamber of a process vessel while heating the process chamber so as to form a first pre-coating film on the inner surface of the process vessel exposed to the process chamber, followed by supplying second film-forming gases into the process chamber to form a second pre-coating film on the first pre-coating film. A semiconductor wafer is loaded into the process chamber. Then, the first gases are supplied into the process chamber while heating the process chamber so as to form a first layer on the wafer, followed by supplying the second gases into the process chamber so as to form a second layer on the first layer. A silane gas is supplied into the process chamber to permit silicon material to be deposited on the surface of the second layer stacked on the first layer. Finally, the wafer having the first and second multi-film is unloaded out of the process vessel.

Abstract: A heat treatment apparatus includes a treatment container having a reaction chamber, and a gas chamber a mount table provided in the treatment container for mounting thereon a wafer such that an upper surface of the wafer is exposed to the reaction chamber, and an annular clamp member provided in the reaction chamber, movable between a clamp position in which it contacts the peripheral edge of the wafer in circular line contact and a waiting position in which it is separated from the wafer. The line contact prevents leakage of the process gas from the reaction chamber through a clearance between the clamp member and the wafer.

Abstract: A vacuum processing apparatus includes: a vacuum processing chamber for processing a target object; a processing gas supply source for supplying a processing gas by which a process is performed to the target object in the vacuum processing chamber; a processing gas supply pipe for supplying the processing gas from the processing gas supply source into the vacuum processing chamber; and a pressure reducing valve for keeping the gas supply pipe at a lower pressure than the atmospheric pressure when the processing gas is to be supplied to the vacuum processing chamber.

Abstract: A vacuum processing apparatus includes: a vacuum processing chamber for processing a target object; a processing gas supply source for supplying a processing gas by which a process is performed to the target object in the vacuum processing chamber; a processing gas supply pipe for supplying the processing gas from the processing gas supply source into the vacuum processing chamber; and a pressure reducing valve for keeping the gas supply pipe at a lower pressure than the atmospheric pressure when the processing gas is to be supplied to the vacuum processing chamber.

Abstract: A workpiece treating method includes a temperature rise step in which first temperature control is performed and a treatment step in which second temperature control is performed and is adapted to treat a workpiece whose emissivity of infrared rays in the temperature rise step is different from that in the treatment step. In the temperature rise step, the temperature of the workpiece is detected by a non-contact type temperature detecting means so as to perform the first temperature control. In the treatment step, the temperature of the workpiece is detected by a contact type temperature detecting means so as to perform the second temperature control.