Abstract: An image formation apparatus according to an embodiment may include: a discharge unit configured to transport printed media from a discharge port to an outside; and a controller configured to cause the discharge unit (i) to perform a holding operation to hold a part of a first group of printed media corresponding to a first print pause sheet number set in a setting unit at the discharge port by the discharge unit, and (ii) when the part of the first group of printed media is removed from the discharge port, to transport a second group of printed media corresponding to a second print pause sheet number set in the setting unit from the discharge port toward the outside and to perform the holding operation to hold a part of the second group of the printed media with being exposed to the outside from the discharge port.

Abstract: A control device is configured to control a damping force of a damping device using a difference between a front-rear acceleration of a vehicle main body and a rotational acceleration of a vehicle wheel, the damping device being configured to dampen a force generated between the vehicle main body and the vehicle wheel.

Abstract: A semiconductor pressure sensor includes: a first silicon substrate including a first recessed part; and a second silicon substrate including a diaphragm covering a first space in the first recessed part, the second silicon substrate being configured to hermetically seal the first space. In cross-section, a plurality of second spaces are hermetically sealed in a state of being separated away from the first space between the first silicon substrate and the second silicon substrate, and are provided in one of or each of a first end side and a second end side of the first space.

Abstract: A semiconductor pressure sensor includes: a first semiconductor substrate; an insulating film provided on the first semiconductor substrate and including a main opening, an introduction opening, and a connection opening which connects the main opening and the introduction opening; a second semiconductor substrate bonded to the first semiconductor substrate with the insulating film interposed therebetween and including a diaphragm provided above the main opening and a receiving pressure inlet connected to the introduction opening; and a gauge resistor provided on the diaphragm and converting a deformation amount of the diaphragm into change in electrical characteristics.

Abstract: A semiconductor pressure sensor according to the present disclosure includes: a first silicon substrate; a first silicon oxide film provided on the first silicon substrate and forming a closed space together with the first silicon substrate; a second silicon substrate provided on the first silicon oxide film; a gauge resistor provided on a surface layer of a surface of the second silicon substrate opposite to a surface on which the first silicon oxide film is provided at a position overlapping with the closed space in a plan view; a first electrode electrically connected to one end of the gauge resistor; and a second electrode electrically connected to another end of the gauge resistor.

Abstract: A control device is configured to control a damping force of a damping device using a difference between a front-rear acceleration of a vehicle main body and a rotational acceleration of a vehicle wheel, the damping device being configured to dampen a force generated between the vehicle main body and the vehicle wheel.

Abstract: A semiconductor pressure sensor includes: a first semiconductor substrate; an insulating film provided on the first semiconductor substrate and including a main opening, an introduction opening, and a connection opening which connects the main opening and the introduction opening; a second semiconductor substrate bonded to the first semiconductor substrate with the insulating film interposed therebetween and including a diaphragm provided above the main opening and a receiving pressure inlet connected to the introduction opening; and a gauge resistor provided on the diaphragm and converting a deformation amount of the diaphragm into change in electrical characteristics.

Abstract: A particulate material with a composition expressed by MaAlbXc in which “M” includes one or more elements selected from the group consisting of Ti, V, Cr, Zr, Nb, Mo, Hf and Ta and “X” includes C or one or more chemical structures selected from the group consisting of C(1.0?x)Nx (where “x” is 0<“x”?1.0), wherein: “a” is two or three; “b” is more than 0.02; and “c” is from 0.8 to 1.2 when “a” is two; or “c” is from 1.8 to 2.6 when “a” is 3. The particulate material has thicknesses whose average value is from 3.5 nm or more to 20 nm or less, and sizes, [{(longer sides)+(shorter sides)}/2], whose average value is from 50 nm or more to 300 nm or less.

Abstract: A particulate material with a composition expressed by Ti2Alx(C(1-y)Ny)z (where “x” is more than 0.02, “y” is 0<“y”<1.0, and “z” is from 0.8 to 1.20), the particulate material comprising layers including gap layers providing an interlayer distance of from 0.59 nm to 0.70 nm within a crystal lattice; and/or with another composition expressed by Ti3Alx(C(1-y)Ny)z (where “x” is more than 0.02, “y” is 0<“y”<1.0, and “z” is from 1.80 to 2.60), the particulate material comprising layers including gap layers providing an interlayer distance of from 0.44 nm to 0.55 nm within a crystal lattice.

Abstract: A particulate material with a composition expressed by Ti2Alx (C(1-y)Ny)z (where “x” is more than 0.02, “y” is 0<“y”<1.0, and “z” is from 0.8 to 1.20), the particulate material comprising layers including gap layers providing an interlayer distance of from 0.59 nm to 0.70 nm within a crystal lattice; and/or with another composition expressed by Ti3Alx(C(1-y)Ny)z (where “x” is more than 0.02, “y” is 0<“y”<1.0, and “z” is from 1.80 to 2.60), the particulate material comprising layers including gap layers providing an interlayer distance of from 0.44 nm to 0.55 nm within a crystal lattice.

Abstract: A particulate material with a composition expressed by MaAlbXc in which “M” includes one or more elements selected from the group consisting of Ti, V, Cr, Zr, Nb, Mo, Hf and Ta and “X” includes C or one or more chemical structures selected from the group consisting of C(1.0?x)Nx (where “x” is 0<“x”?1.0), wherein: “a” is two or three; “b” is more than 0.02; and “c” is from 0.8 to 1.2 when “a” is two; or “c” is from 1.8 to 2.6 when “a” is 3. The particulate material has thicknesses whose average value is from 3.5 nm or more to 20 nm or less, and sizes, [{(longer sides)+(shorter sides)}/2], whose average value is from 50 nm or more to 300 nm or less.

Abstract: A semiconductor pressure sensor includes: a first semiconductor substrate having a surface; an oxide film provided on the surface of the first semiconductor substrate and having a cavity; a second semiconductor substrate bonded to the first semiconductor substrate via the oxide film and having a diaphragm above the cavity; and a piezoelectric device provided on the diaphragm, wherein no recess is provided in the surface of the first semiconductor substrate within a region of the diaphragm, and a stress mitigating groove is provided in the oxide film outside and around the diaphragm.

Abstract: There is provided a sealing apparatus for a cryopreservation bag, with which a sealing treatment of an inlet/outlet of the cryopreservation bag is carried out automatically and anyone can safely and properly carry out the sealing treatment. The sealing apparatus includes: a bag clamping device 56; a laser device 57; and a scanning structure 58 for moving the bag clamping device 56, for example. The bag clamping device 56 includes a fixed pinching block 67, a movable pinching block 69, and a clamp actuator 70. The laser device 57 includes a laser oscillator 104 and a condensing lens 107. The fixed pinching block 67 includes a block base 73, a heat radiator 74, and a heat radiator holder 75. An infrared laser beam is radiated to a sealed portion 55 of the bag to form a seal bead 125 for sealing in a state in which the sealed portion 55 is pinched and fixed by the heat radiator 74 and the movable pinching block 69 and while the bag clamping device 56, for example, is moved by the scanning structure 58.

Abstract: A semiconductor pressure sensor includes: a first semiconductor substrate having a surface; an oxide film provided on the surface of the first semiconductor substrate and having a cavity; a second semiconductor substrate bonded to the first semiconductor substrate via the oxide film and having a diaphragm above the cavity; and a piezoelectric device provided on the diaphragm, wherein no recess is provided in the surface of the first semiconductor substrate within a region of the diaphragm, and a stress mitigating groove is provided in the oxide film outside and around the diaphragm.

Abstract: An image processing apparatus includes an executing circuitry, a macro executing circuitry, and a managing circuitry. The executing circuitry executes one or more types of image processing. The macro executing circuitry executes, with the executing circuitry, a first macro to which predetermined one or more types of image processing out of the one or more types of image processing are assigned. The predetermined one or more types of image processing includes a first type of image processing. The managing circuitry manages execution authority setting of the first type of image processing and execution authority setting of the first macro, and temporarily changes the execution authority setting of the first type of image processing on a basis of the execution authority setting of the first macro upon the execution of the first macro by the macro executing circuitry.

Abstract: A semiconductor pressure sensor includes a fixed electrode placed at a principal surface of a semiconductor substrate, and a diaphragm movable through an air gap in a thickness direction of the semiconductor substrate at least in an area where the diaphragm is opposed to the fixed electrode. The diaphragm includes: a movable electrode; a first insulation film placed closer to the air gap with respect to the movable electrode; a second insulation film placed opposite to the air gap with respect to the movable electrode, the second insulation film being of a same film type as the first insulation film; and a shield film that sandwiches the second insulation film with the movable electrode.

Abstract: A semiconductor pressure sensor includes a fixed electrode placed at a principal surface of a semiconductor substrate, and a diaphragm movable through an air gap in a thickness direction of the semiconductor substrate at least in an area where the diaphragm is opposed to the fixed electrode. The diaphragm includes: a movable electrode; a first insulation film placed closer to the air gap with respect to the movable electrode; a second insulation film placed opposite to the air gap with respect to the movable electrode, the second insulation film being of a same film type as the first insulation film; and a shield film that sandwiches the second insulation film with the movable electrode.

Abstract: An image processing apparatus includes an executing circuitry, a macro executing circuitry, and a managing circuitry. The executing circuitry executes one or more types of image processing. The macro executing circuitry executes, with the executing circuitry, a first macro to which predetermined one or more types of image processing out of the one or more types of image processing are assigned. The predetermined one or more types of image processing includes a first type of image processing. The managing circuitry manages execution authority setting of the first type of image processing and execution authority setting of the first macro, and temporarily changes the execution authority setting of the first type of image processing on a basis of the execution authority setting of the first macro upon the execution of the first macro by the macro executing circuitry.

Abstract: In a semiconductor pressure sensor, a fixed electrode is formed as the same layer as a diffusion layer formed to extend from a surface of a semiconductor substrate to inside of the semiconductor substrate. A void is formed by removing a sacrifice film, which is a region constituted of the same film as a floating gate electrode. A movable electrode includes an anchor portion which supports the movable electrode via the void relative to the fixed electrode and in which the sacrifice film is at least partially opened. The anchor portion has a first anchor provided to divide the movable electrode into a plurality of movable electrode units when viewed in a plan view such that one pair of adjacent movable electrode units of the plurality of movable electrode units divided share the same first anchor.

Abstract: A porous composite metal oxide, including a mixture of first ultrafine particles containing alumina and second ultrafine particles containing zirconia, wherein the first ultrafine particles and the second ultrafine particles are uniformly dispersed in such a way as to satisfy a condition that standard deviations of content ratios (% by mass) of all metal elements contained in the porous composite metal oxide at 0.1% by mass or more are each 10 or less, the standard deviations being obtained by measuring content ratios of the metal elements at 100 measurement points within a minute analysis region of 20 nm square by energy dispersive X-ray spectroscopy using a scanning transmission electron microscope equipped with a spherical aberration correction function.