Abstract: At a pressure sensor region, a pressure sensor including a fixed electrode, a void and a movable electrode is formed. At a CMOS region, a memory cell transistor and a field effect transistor are formed. An etching hole communicating with the void is closed by a first sealing film. The void is formed by removing a region of a film identical to the film of a gate electrode of the memory cell transistor. The movable electrode is formed of a film identical to the film of a gate electrode.

Abstract: A user key storage unit stores at least one user key corresponding to usage authorities of image data. A first encryption unit encrypts the image data using a first encryption key. A second encryption key creation unit creates a second encryption key assigned to each usage authority. A key-storage data creation unit creates a key-storage data for each usage authority by encrypting the first encryption key and authority information using the second encryption key. A user-supplementary data creation unit creates user-supplementary data for each user key. A device-supplementary data creation unit creates device-supplementary data for at least one usage authority and for at least one device key. A data output unit outputs encrypted image data with the key-storage data, the user-supplementary data and the device-supplementary data.

Abstract: An object of the present invention is to ensure that, during adjustment of a spring load by an adjuster, total fully-stretched lengths of an outer tube and an inner tube remain unchanged and the adjuster is prevented from protruding from an upper surface of a cap. In a hydraulic shock absorber 10, a spring load adjusting device 30 is configured such that an adjuster 31 is provided at an upper end portion of a vehicle body side tube 11, a push rod 33 that is moved up and down by the adjuster 31 is penetrated into a hollow portion of a hollow rod 23, a suspension spring 35 is pressurized by the push rod 33 that protrudes from the hollow portion of the hollow rod 23 to the inside of a wheel side tube 12, and the spring load of the suspension spring 35 can be adjusted by the up-and-down motion of the push rod 33 caused by the adjuster 31.

Abstract: In a method of manufacturing a semiconductor pressure sensor, a multilayer structure including a polysilicon diaphragm, a polysilicon gauge resistor formed on a side of a space which is to serve as a vacuum chamber below the polysilicon diaphragm, and a group of insulating films containing the polysilicon diaphragm and the polysilicon gauge resistor and having an etching solution introduction hole in contact with a sacrificial layer is formed on the sacrificial layer. Then, an etching solution is supplied through the etching solution introduction hole and the sacrificial layer is etched with the etching solution, to thereby obtain a diaphragm body formed of the multilayer structure, which functions on the vacuum chamber, and a surface of a silicon substrate below a first opening of a first insulating film is etched to thereby form the space which is to serve as the vacuum chamber and a diaphragm stopper disposed in the space, protruding toward near the center of the diaphragm body.

Abstract: A semiconductor pressure sensor includes a silicon substrate, an active gauge resistance forming portion having a first diaphragm and a first gauge resistance formed on the silicon substrate, and a dummy gauge resistance forming portion for temperature compensation having a second diaphragm and a second gauge resistance, formed on the substrate. The first diaphragm of the active gauge resistance forming portion and the second diaphragm of the dummy gauge resistance forming portion for temperature compensation are formed of a common polysilicon film. The polysilicon film has an anchor portion to be connected to the substrate. The first and second diaphragms have mutually identical or symmetrical structures and the first and second gauges have mutually identical or symmetrical structures. Accordingly, a semiconductor pressure sensor capable of highly accurate temperature compensation and manufacturing method thereof can be provided.

Abstract: A semiconductor pressure sensor comprises: a substrate having a through-hole; a polysilicon film provided on the substrate and having a diaphragm above the through-hole; an insulating film provided on the polysilicon film; first, second, third, and forth polysilicon gauge resistances provided on the insulating film and having a piezoresistor effect; and polysilicon wirings connecting the first, second, third, and forth polysilicon gauge resistances in a bridge shape, wherein each of the first and second polysilicon gauge resistances is disposed on a central portion of the diaphragm and has a plurality of resistors connected in parallel, a structure of the first polysilicon gauge resistance is same as a structure of the second polysilicon gauge resistance, and a direction of the first polysilicon gauge resistance is same as a direction of the second polysilicon gauge resistance.

Abstract: A method of synthesizing metal composite oxide, the method including: a step of separately introducing into a high-speed stirring apparatus a ceria composite oxide microparticle colloid having a mean particle diameter of 10 nm or less after adding a dispersant and an alumina microparticle colloid having a mean particle diameter of 10 nm or less after adding a dispersant; a step of synthesizing alumina-ceria composite oxide microparticles by allowing the ceria composite oxide microparticles and the alumina microparticles that have been introduced into the high-speed stirring apparatus to react in a microscopic space; and a step of applying a shearing force of 17000 sec?1 or more to the alumina-ceria composite oxide microparticles.

Abstract: In a method of manufacturing a semiconductor pressure sensor, a multilayer structure including a polysilicon diaphragm, a polysilicon gauge resistor formed on a side of a space which is to serve as a vacuum chamber below the polysilicon diaphragm, and a group of insulating films containing the polysilicon diaphragm and the polysilicon gauge resistor and having an etching solution introduction hole in contact with a sacrificial layer is formed on the sacrificial layer. Then, an etching solution is supplied through the etching solution introduction hole and the sacrificial layer is etched with the etching solution, to thereby obtain a diaphragm body formed of the multilayer structure, which functions on the vacuum chamber, and a surface of a silicon substrate below a first opening of a first insulating film is etched to thereby form the space which is to serve as the vacuum chamber and a diaphragm stopper disposed in the space, protruding toward near the center of the diaphragm body.

Abstract: An image processing device includes an image scanning part that scans an image on a document and generates image data based on the image, an input part that accepts an input designation of a division number into which the image data generated by the image scanning part is divided, and an output resolution of output image data created based on the image data, a division processing part that creates divided image data by dividing the image data by the division number accepted by the input part, controller that calculates a scan resolution based on the division number and the output resolution of the output image data, and a data output part that outputs the divided image data as the output image data. The controller controls the image scanning part to scan the image at the calculated scan resolution.

Abstract: A porous composite metal oxide, including a mixture of first ultrafine particles containing alumina and second ultrafine particles containing zirconia, wherein the first ultrafine particles and the second ultrafine particles are uniformly dispersed in such a way as to satisfy a condition that standard deviations of content ratios (% by mass) of all metal elements contained in the porous composite metal oxide at 0.1% by mass or more are each 10 or less, the standard deviations being obtained by measuring content ratios of the metal elements at 100 measurement points within a minute analysis region of 20 nm square by energy dispersive X-ray spectroscopy using a scanning transmission electron microscope equipped with a spherical aberration correction function.

Abstract: A first interconnection is formed along a groove of a substrate and on a bottom surface of the groove, and has a first thickness. A second interconnection is electrically connected to the first interconnection and has a second thickness larger than the first thickness. An acceleration sensing unit is electrically connected to the second interconnection. A sealing unit has a portion opposed to the substrate with the first interconnection therebetween, and surrounds the second interconnection and the acceleration sensing unit on the substrate. A cap is arranged on the sealing unit to form a cavity on a region of the substrate surrounded by the sealing unit. Thereby, airtightness of the cavity can be ensured and also an electric resistance of the interconnection connected to the acceleration sensing unit can be reduced.

Abstract: An image forming apparatus performs a direct printing function. A selecting section selects at least two files from a plurality of files stored in at least one of an internal storage medium and an external storage medium. A human interface receives passwords form a user. A password determining section determines whether the selected files are protected by passwords. A file extracting section extracts the selected files from an internal storage medium or external storage medium. A password verifying section determines whether passwords contained in the selected files and the passwords inputted through the human interface coincide. A printer prints the selected files. A printing controller controls the printer, causing the printer to print at least one of selected files if the password verifying section has determined that the password contained in the at least one selected file and the password inputted by the user coincide.

Abstract: Multi-color image data received from a host device are divided into blocks. The brightness of at least a first color in each block is tested to determine whether the block is watermarkable. An electronic watermark is embedded into each watermarkable block by modifying the image data of at least a second color. The image data of the second color can then be combined with image data of the other colors to generate watermarked output image data or print a watermarked image. The electronic watermark can be read from the watermarked image with a low error rate.

Abstract: A semiconductor pressure sensor comprises: a substrate having a through-hole; a polysilicon film provided on the substrate and having a diaphragm above the through-hole; an insulating film provided on the polysilicon film; first, second, third, and forth polysilicon gauge resistances provided on the insulating film and having a piezoresistor effect; and polysilicon wirings connecting the first, second, third, and forth polysilicon gauge resistances in a bridge shape, wherein each of the first and second polysilicon gauge resistances is disposed on a central portion of the diaphragm and has a plurality of resistors connected in parallel, a structure of the first polysilicon gauge resistance is same as a structure of the second polysilicon gauge resistance, and a direction of the first polysilicon gauge resistance is same as a direction of the second polysilicon gauge resistance.

Abstract: A diaphragm made of a polysilicon film is provided above a first main surface of a silicon substrate. Four gauge resistors are provided on the top face of the diaphragm. A through hole for exposing the bottom face of the diaphragm is formed in the silicon substrate. An anchor portion for mounting the diaphragm on the silicon substrate is provided between the diaphragm and the silicon substrate in a manner surrounding circumferentially an opening end of the through hole located at the side facing the first main surface. Accordingly, a semiconductor pressure sensor having a diaphragm of reduced and less varied thickness can be obtained.

Abstract: First and second semiconductor layers are attached to each other with an insulation layer sandwiched therebetween. An acceleration sensor device is formed in the first semiconductor layer. A control device for controlling the acceleration sensor device is formed on the second semiconductor layer. Through holes are formed in the second semiconductor layer, and an insulation layer is formed to cover the wall surfaces of the through holes. Through interconnections are formed within the through holes for electrically connecting the acceleration sensor device and the control device to each other. Accordingly, it is possible to obtain an acceleration sensor having excellent detection accuracy while having a reduced size, and a fabrication method thereof.

Abstract: A material to be treated containing solid particles in a liquid is stirred together with milling media, and irradiated with ultrasonic waves during stirring to finely mill the solid particles to nanometer size and disperse the solid particles in the liquid. The ultrasonic waves create cavitation in the liquid and upon decay of the cavitation, shock waves are produced that cause the solid particles to vigorously collide with one another and with the milling media and these collisions, together with the shearing forces created by collision of the milling media, can produce on a commercial scale nano particles having an average particle size of at most 100 nm.

Abstract: A diaphragm made of a polysilicon film is provided above a first main surface of a silicon substrate. Four gauge resistors are provided on the top face of the diaphragm. A through hole for exposing the bottom face of the diaphragm is formed in the silicon substrate. An anchor portion for mounting the diaphragm on the silicon substrate is provided between the diaphragm and the silicon substrate in a manner surrounding circumferentially an opening end of the through hole located at the side facing the first main surface. Accordingly, a semiconductor pressure sensor having a diaphragm of reduced and less varied thickness can be obtained.

Abstract: A semiconductor pressure sensor includes a silicon substrate, an active gauge resistance forming portion having a first diaphragm and a first gauge resistance formed on the silicon substrate, and a dummy gauge resistance forming portion for temperature compensation having a second diaphragm and a second gauge resistance, formed on the substrate. The first diaphragm of the active gauge resistance forming portion and the second diaphragm of the dummy gauge resistance forming portion for temperature compensation are formed of a common polysilicon film. The polysilicon film has an anchor portion to be connected to the substrate. The first and second diaphragms have mutually identical or symmetrical structures and the first and second gauges have mutually identical or symmetrical structures. Accordingly, a semiconductor pressure sensor capable of highly accurate temperature compensation and manufacturing method thereof can be provided.