Abstract: A vacuum chamber includes a radical beam irradiation part and a nanoparticle beam irradiation part. A substrate is held by a substrate holding part. The nanoparticle beam irradiation part irradiates the substrate with a beam of metal nanoparticles serving as a catalyst to form the catalyst on the substrate. Thereafter, the radical beam irradiation part generates a plasma from a source gas to irradiate the substrate with a beam of generated neutral radical species to grow a carbon nanotube on the substrate. The provision of an aperture in the radical beam irradiation part allows a relatively high degree of vacuum of 10?5 Torr to 10?3 Torr to be maintained in the vacuum chamber if the generation of the plasma involves a high pressure.

Abstract: A mixing valve assembly 42 is communicated with a dedicated tank 51D, storing therein a compatibilizer D, via an inlet valve 43 and is also communicated with dedicated tanks 51A-51C via three injection valves, the tanks storing therein auxiliaries A-C respectively. A chemical formulation is prepared by selectively injecting any one(s) of four chemical agents into the mixing valve assembly 42 by way of on-off control of the inlet valve 43 and the injection valves and blending together the injected chemical agents. Then, the chemical formulation is pumped into SCF by a high-pressure pump 45 such that the SCF and the chemical formulation are mixed together to form a process fluid. Thus, the number of components of a high-pressure portion can be reduced to achieve a cost reduction of an apparatus. Furthermore, a pipe line for pumping the chemical agents is simplified.

Abstract: Disclosed is a high pressure processing method for subjecting a processing object to a high pressure processing using a high pressure fluid. In this method, the high pressure fluid is brought into collision with the surface of the processing object placed in a high pressure processing chamber, and then distributed along the surface of the processing object in an outward direction beyond the processing object.

Abstract: Mixing baths 6A and 6B which temporarily hold chemical agents A and B respectively are disposed. The mixing baths 6A and 6B are each connected with a high-pressure fluid supplying unit 2. For surface treatment using a mixture of the chemical agent A and SCF (processing fluid), SCF is fed under pressure from the high-pressure fluid supplying unit 2 to the mixing bath 6A which already holds the chemical agent A, whereby the chemical agent A dissolves in SCF flowing into the mixing bath 6A and the mixture of the chemical agent A and SCF (processing fluid) is created. As a high-pressure valve (processing fluid introducing valve) 39 is opened, the processing fluid is sent into a pressure vessel 1. This achieves a predetermined surface treatment of a substrate which has been set inside the pressure vessel 1, using the processing fluid.

Abstract: After subjected to a developing process, a rinsing process and a replacing process in this order in a developing unit 10A, 10B, a substrate W wet with an anti-drying solution is wet-transported to a supercritical drying unit 20 by a primary transport robot 30. The supercritical drying unit 20 performs a high-pressure drying process (supercritical drying process) in a dedicated manner. Accordingly, by virtue of the presence of the anti-drying solution, the substrate W is effectively prevented from becoming air-dry during the transportation of the substrate W.

Abstract: A processing fluid is prepared by mixing purified water and methanol as a solvent with SCCO2, and the processing fluid is brought into contact with a surface of a substrate so as to form oxide film on the surface of the substrate. In this processing fluid, SCCO2 functions as a carrier medium while —OH functional group (hydroxyl group) disperse in the SCCO2 as active chemical species. Such the highly motile and highly concentrated SCCO2 is used as a carrier medium, while the active chemical species are mixed with carrier medium. Because of this, excessive presence of active chemical species is prevented in the atmosphere in contact with the surface of the substrate. The active chemical species demonstrates superior diffusiveness, and moreover, even a small amount of solvent contains large amount of active chemical species. Therefore, the fresh active chemical species are constantly supplied to the surface of the substrate, reacting excellently with the surface of the substrate, thereby forming oxide film.

Abstract: A high-pressure processing apparatus includes a processing vessel including a processing chamber formed therein to perform a certain process onto an object in the processing chamber; fluid feeding means which feeds a high-pressure fluid into the processing chamber; fluid discharging means which discharges the high-pressure fluid from the processing chamber; an agitating unit which is arranged in the processing chamber and is operative to flow the high-pressure fluid over the object by relative rotation to the processing vessel; a communicating channel which is formed in the processing vessel to communicate inside and outside of the processing chamber; a rotary driving member which is coupled to the agitating unit via a shaft portion provided in the communicating channel; and a sealing portion which is provided between the shaft portion and the processing vessel to disconnect the processing chamber from the rotary driving member.

Abstract: Infrared light is irradiated whose wavelength corresponds to the absorption band of water contained in a chemical agent of a processing fluid introduced into inside a processing chamber of a pressure container. Only during irradiation with the infrared light, the water content of the processing fluid is selectively heated and accordingly activated. As a substrate rotates, the chemical agent on a substrate surface is sequentially activated, thereby accelerating the cleaning function of the water content of the chemical agent. This effectively removes unwanted substances (substances to be removed by cleaning) such as particles and a resist adhering to the substrate surface off from the substrate W.

Abstract: Processing fluid is vertically incident to a surface S1 of a rotation substrate W through a delivery path provided on a pressure vessel. The curtain of processing fluid has a width longer than a diameter of the substrate. Therefore, a cleaning process is execute onto the whole surface of the substrate by the processing fluid.

Abstract: When the hatch of a substrate washing chamber 5 is opened to receive a substrate, certain valves are closed, and a valve is opened, supply CO2 to purge the substrate washing chamber 5 to and exclude air. When the hatch is closed, another valve is opened to vent substrate washing chamber 5 so that the CO2 expels any gas and unwanted air from the substrate washing chamber 5 and the conduits. Thereafter, super critical CO2 is used to wash the substrate and clean the circulation line. The flow of supercritical CO2 is sent to the substrate washing chamber 5. After flowing through the circulation line, including a circulation channel 11, it passes through a bypass channel 12 to a decompressor 7. Any chemicals or organic substances left in the circulation line are continuously sent to a separation/recover bath 8 together with the flow.

Abstract: When the hatch of a substrate washing chamber 5 is opened to receive a substrate, certain valves are closed, and one valve is opened, to supply CO2 to purge the substrate washing chamber 5 to and exclude air. When the hatch is closed, another valve is opened to vent substrate washing chamber 5 so that the CO2 expels any gas and unwanted air from the substrate washing chamber 5 and the conduits. Thereafter, supercritical CO2 is used to wash the substrate and clean the circulation line. The flow of supercritical CO2 is sent to the substrate washing chamber 5. After flowing through the circulation line, including a circulation channel 11, it passes through a bypass channel 12 to a decompressor 7. Any chemicals or organic substances left in the circulation line are continuously sent to separation/recovery bath 8 together with the flow.

Abstract: A high-pressure processing apparatus includes a processing vessel including a processing chamber formed therein to perform a certain process onto an object in the processing chamber; fluid feeding means which feeds a high-pressure fluid into the processing chamber; fluid discharging means which discharges the high-pressure fluid from the processing chamber; an agitating unit which is arranged in the processing chamber and is operative to flow the high-pressure fluid over the object by relative rotation to the processing vessel; a communicating channel which is formed in the processing vessel to communicate inside and outside of the processing chamber; a rotary driving member which is coupled to the agitating unit via a shaft portion provided in the communicating channel; and a sealing portion which is provided between the shaft portion and the processing vessel to disconnect the processing chamber from the rotary driving member.

Abstract: A high-pressure processing apparatus includes a processing vessel including a processing chamber formed therein to perform a certain process onto an object in the processing chamber; fluid feeding means which feeds a high-pressure fluid into the processing chamber; fluid discharging means which discharges the high-pressure fluid from the processing chamber; an agitating unit which is arranged in the processing chamber and is operative to flow the high-pressure fluid over the object by relative rotation to the processing vessel; a communicating channel which is formed in the processing vessel to communicate inside and outside of the processing chamber; a rotary driving member which is coupled to the agitating unit via a shaft portion provided in the communicating channel; and a sealing portion which is provided between the shaft portion and the processing vessel to disconnect the processing chamber from the rotary driving member.

Abstract: Mixing baths 6A and 6B which temporarily hold chemical agents A and B respectively are disposed. The mixing baths 6A and 6B are each connected with a high-pressure fluid supplying unit 2. For surface treatment using a mixture of the chemical agent A and SCF (processing fluid), SCF is fed under pressure from the high-pressure fluid supplying unit 2 to the mixing bath 6A which already holds the chemical agent A, whereby the chemical agent A dissolves in SCF flowing into the mixing bath 6A and the mixture of the chemical agent A and SCF (processing fluid) is created. As a high-pressure valve (processing fluid introducing valve) 39 is opened, the processing fluid is sent into a pressure vessel 1. This achieves a predetermined surface treatment of a substrate which has been set inside the pressure vessel 1, using the processing fluid.

Abstract: A high-pressure processing apparatus for removing unnecessary matters on objects to be processed by bringing a high-pressure fluid and a chemical liquid other than the high-pressure fluid into contact with the objects to be processed in a pressurized state is provided with a plurality of high-pressure processing chambers, a common high-pressure fluid supply unit for supplying the high-pressure fluid to each one of the high-pressure processing chambers, a common chemical liquid supply unit for supplying the chemical liquid to the each high-pressure processing chambers, and a separating unit for separating gaseous components from a mixture of the high-pressure fluid and the chemical liquid discharged from the high-pressure processing chambers after the objects are processed. Thus, a high-pressure processing apparatus which has such a compact construction as to be partly installable in a clean room and can stably perform a high-pressure processing can be provided.

Abstract: Provided is a cleaning apparatus for cleaning an object to be treated by contacting the object to be treated with a high pressure fluid of a cleaning composition containing a cleaning component as an essential ingredient. The cleaning apparatus includes high pressure fluid supplying means for supplying the high pressure fluid of the cleaning composition, a high pressure washing vessel for removing unnecessary materials deposited on the object to be treated by contacting the object to be treated with the high pressure fluid of the cleaning composition therein, a storing vessel for storing a waste high pressure fluid of the cleaning composition carrying the unnecessary materials therein, and a sealed structure for sealably housing the high pressure fluid supplying means, the high pressure washing vessel, and the storing vessel therein. The sealed structure has first exhaust means for exhausting the gas remaining in the sealed structure therefrom.

Abstract: With respect to any one of processing units, a main transportation path, a developing unit, a dedicated transportation robot and a high-pressure processing unit are disposed linearly in this order in a direction. Hence, even if a processing fluid adhering to a substrate or an evaporant of the processing fluid moves toward the main transportation path while the high-pressure processing unit transports the substrate wet with the processing fluid, there are the processing units located which the processing fluid or its evaporant must arrive at before reaching the main transportation path.

Abstract: A high-pressure processing apparatus includes a processing vessel including a processing chamber formed therein to perform a certain process onto an object in the processing chamber; fluid feeding means which feeds a high-pressure fluid into the processing chamber; fluid discharging means which discharges the high-pressure fluid from the processing chamber; an agitating unit which is arranged in the processing chamber and is operative to flow the high-pressure fluid over the object by relative rotation to the processing vessel; a communicating channel which is formed in the processing vessel to communicate inside and outside of the processing chamber; a rotary driving member which is coupled to the agitating unit via a shaft portion provided in the communicating channel; and a sealing portion which is provided between the shaft portion and the processing vessel to disconnect the processing chamber from the rotary driving member.

Abstract: When the hatch of a substrate washing chamber 5 is opened to receive a substrate, certain valves are closed, and a valve is opened, supply CO2 to purge the substrate washing chamber 5 to and exclude air. When the hatch is closed, another valve is opened to vent substrate washing chamber so that the CO2 expels any gas and unwanted air from the substrate washing chamber 5 and the conduits. Thereafter, super critical CO2 is used to wash the substrate and clean the circulation line. The flow of supercritical CO2 is sent to the substrate washing chamber 5. After flowing through the circulation line, including a circulation channel 11, it passes through a bypass channel 12 to a decompressor 7. Any chemicals or organic substances left in the circulation line are continuously sent to a separation/recover bath 8 together with the flow.

Abstract: A high-pressure processing apparatus includes a processing vessel including a processing chamber formed therein to perform a certain process onto an object in the processing chamber; fluid feeding means which feeds a high-pressure fluid into the processing chamber; fluid discharging means which discharges the high-pressure fluid from the processing chamber; an agitating unit which is arranged in the processing chamber and is operative to flow the high-pressure fluid over the object by relative rotation to the processing vessel; a communicating channel which is formed in the processing vessel to communicate inside and outside of the processing chamber; a rotary driving member which is coupled to the agitating unit via a shaft portion provided in the communicating channel; and a sealing portion which is provided between the shaft portion: and the processing vessel to disconnect the processing chamber from the rotary driving member.