Patents by Inventor Kimitsugu Saito

Kimitsugu Saito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5427054
    Abstract: A process of forming high quality diamond films, wherein non-diamond components and crystal defects are significantly reduced. Diamond films are formed on a diamond substrate by vapor-phase synthesis using a source gas, wherein the atomic concentrations of oxygen and carbon, [0] and [C], respectively, in the source gas satisfy the condition that 0.01.ltoreq.[C]/([C]+[O]).ltoreq.0.40. Boron (B) doped p-type semiconducting films can also be formed using the same source gas which further includes a B-containing compound.
    Type: Grant
    Filed: June 6, 1994
    Date of Patent: June 27, 1995
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Kimitsugu Saito, Koichi Miyata
  • Patent number: 5371383
    Abstract: A diamond film FET according to the present invention comprises a semiconducting diamond layer, a gate, a source, and a drain, wherein said semiconducting diamond layer comprises a semiconducting highly-oriented diamond film grown by chemical vapor deposition, and at least 80% of the surface area of said diamond film consists of either (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of either (100) or (111) crystal planes, simultaneously satisfy the following relations between the adjacent crystal planes:, and
    Type: Grant
    Filed: May 14, 1993
    Date of Patent: December 6, 1994
    Assignee: Kobe Steel USA Inc.
    Inventors: Koichi Miyata, Kimitsugu Saito, David L. Dreifus, Brian R. Stoner
  • Patent number: 5309000
    Abstract: A is a heat-resisting ohmic electrode on diamond film, including: a p-type semiconducting diamond film; a boron-doped diamond layer provided on the semiconducting diamond film; and an electrode element made of p-type Si selectively formed on the boron-doped diamond layer; wherein the boron concentration in the boron-doped diamond layer is from 1.0.times.10.sup.19 to 1.8.times.10.sup.23 cm.sup.-3, and at least one impurity selected from the group consisting of B, Al and Ga is doped in the electrode element with a concentration from 1.0.times.10.sup.20 to 5.0.times.10.sup.22 cm.sup.-3. The ohmic electrode on diamond film is applicable for electronic devices operative at high temperature.
    Type: Grant
    Filed: April 22, 1993
    Date of Patent: May 3, 1994
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Kimitsugu Saito, Koji Kobashi, Kozo Nishimura, Koichi Miyata