Abstract: An assembly for upgrading or remediating semiconductor devices utilizing a remediation, adaptation, modification or upgrade chip in a piggyback configuration with a primary bare chip to achieve an upgrade, modification or adaptation of the primary chip or remedy a design or fabrication problem with the primary chip.

Abstract: An integrated circuit device is provided comprising an integrated circuit pad, an internal integrated circuit, and an ESD protection circuit. The internal integrated circuit is conductively coupled to the integrated circuit pad so as to define a primary electrical path from the integrated circuit pad to the internal integrated circuit. The ESD protection circuit is conductively coupled to the integrated circuit pad so as to define a secondary electrical path from the integrated circuit pad to the ESD protection circuit. The ESD protection circuit comprises a semiconductor structure arranged to define a doped silicon substrate, a drain region, a source region, an electrically insulating region, and a gate structure. The drain region is formed in the silicon substrate and is conductively coupled to the integrated circuit pad via the secondary electrical path. The source region is formed in the silicon substrate and is conductively coupled to a relatively low electrical potential.

Abstract: Methods and structures for pad reconfiguration to allow intermediate testing during the manufacture of an integrated circuit are disclosed. The methods and structures disclosed are particularly usefull in testing an embedded subcircuit, such as a memory array within an embedded chip product. A bond pad reconfiguration etch and other means for reconfiguring a bond pad are also disclosed.

Abstract: A test socket for testing a vertical surface mount packaged semiconductor device, the test socket including a test substrate, a support member, and clamps. The test substrate includes terminals which are electrically connectable to a testing device. The shape of the support member is complementary to the shape of the bottom surface of leads extending from the vertical surface mount packaged semiconductor device. The shape of the clamps is complementary to the top surface of the leads. The test substrate may also define lead alignment notches around one or more of the terminals. Upon placement of a vertical surface mount packaged semiconductor device on the test substrate, the leads are aligned with their corresponding terminals, then placed against the terminals and the support member. The clamps are then placed against the leads, biasing each of the leads against the support member and its corresponding terminal.

Abstract: A DRAM memory array is disclosed that uses a current limiting circuit employing current feedback to clamp the current flow to reduced levels than were previously possible. The current limiting circuit comprises a long length, depletion mode transistor that has its gate voltage reduced when row-to-column shorts exist to limit the bleed current. An alternative embodiment uses a P-channel FET in series with the depletion mode transistor and has its gate tied to a negative supply and passes current until both digit lines approach approximately 0.3 Volts.

Abstract: Methods and structures for pad reconfiguration to allow intermediate testing during the manufacture of an integrated circuit are disclosed. The methods and structures disclosed are particularly useful in testing an embedded subcircuit, such as a memory array within an embedded chip product. A bond pad reconfiguration etch and other means for reconfiguring a bond pad are also disclosed.

Abstract: Methods and structures for pad reconfiguration to allow intermediate testing during the manufacture of an integrated circuit are disclosed. The methods and structures disclosed are particularly useful in testing an embedded subcircuit, such as a memory array within an embedded chip product. A bond pad reconfiguration etch and other means for reconfiguring a bond pad are also disclosed.

Abstract: A masking and etching technique during the formation of a memory cell capacitor which simultaneously separates storage poly into individual storage poly nodes and etches recesses into the storage poly nodes which increase the surface area of the storage poly nodes and thereby increase the capacitance of a completed memory cell without additional processing steps.

Abstract: A device and method for increasing integrated circuit density comprising at least a pair of superimposed dice, wherein at least one of the superimposed dice has at least one bond pad variably positioned on an active surface of the die. A plurality of lead fingers from a leadframe extend between the dice. The leadframe comprises at least one lead with leads of non-uniform length and configuration to attach to the differently positioned bond pads of the multiple dice. An advantage of the present invention is that it allows dice with differing bond pad arrangements to be used in a superimposed configuration to increase circuit density, while eliminating the use of bond wires in such a configuration.

Abstract: An embodiment of the present invention discloses a memory device having an array with digit lines arranged in complementary pairs, the array comprising; a substantially planar layer having trenches therein; a first level of digit lines residing at least partially in the trenches; a second level of digit lines residing on the surface of the layer, the second level extending in generally parallel relation to the digit lines in the first level. The first level of digit lines are in alternating positions with the second level of digit lines and the alternating positions comprise a repeating pattern of a first complementary pair of digit lines at the first level adjacent a second complementary pair of digit lines at the second level.

Abstract: A device and method for increasing integrated circuit density comprising at least a pair of superimposed dice, wherein a least one of the superimposed dice has at least one bond pad variably positioned on an active surface of the die. A plurality of lead fingers from a leadframe extend between the dice. The leadframe comprises at least one lead with leads of non-uniform length and configuration to attach to the differently positioned bond pads of the multiple die. An advantage of the present invention is that it allows dice with differing bond pad arrangements to be used in a superimposed configuration to increase circuit density, while eliminating the use of bond wires in such a configuration.

Abstract: A device and method for increasing integrated circuit density comprising at least a pair of superimposed dice, wherein at least one of the superimposed dice has at least one bond pad variably positioned on an active surface of the die. A plurality of lead fingers from a leadframe extend between the dice. The leadframe comprises at least one lead with leads of non-uniform length and configuration to attach to the differently positioned bond pads of the multiple dice. An advantage of the present invention is that it allows dice with differing bond pad arrangements to be used in a superimposed configuration to increase circuit density, while eliminating the use of bond wires in such a configuration.