Patents by Inventor Kin Pong Lo
Kin Pong Lo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240112945Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.Type: ApplicationFiled: December 14, 2023Publication date: April 4, 2024Inventors: Anhthu NGO, Zuoming ZHU, Balasubramanian RAMACHANDRAN, Paul BRILLHART, Edric TONG, Anzhong CHANG, Kin Pong LO, Kartik SHAH, Schubert S. CHU, Zhepeng CONG, James Francis MACK, Nyi O. MYO, Kevin Joseph BAUTISTA, Xuebin LI, Yi-Chiau HUANG, Zhiyuan YE
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Patent number: 11927482Abstract: One or more embodiments described herein generally relate to systems and methods for calibrating an optical emission spectrometer (OES) used for processing semiconductor substrates. In embodiments herein, a light fixture is mounted to a plate within a process chamber. A light source is positioned within the light fixture such that it provides an optical path that projects directly at a window through which the OES looks into the process chamber for its reading. When the light source is on, the OES measures the optical intensity of radiation from the light source. To calibrate the OES, the optical intensity of the light source is compared at two separate times when the light source is on. If the optical intensity of radiation at the first time is different than the optical intensity of radiation at the second time, the OES is modified.Type: GrantFiled: March 27, 2020Date of Patent: March 12, 2024Assignee: Applied Materials, Inc.Inventors: Kin Pong Lo, Lara Hawrylchak, Malcolm J. Bevan, Theresa Kramer Guarini, Wei Liu, Bernard L. Hwang
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Patent number: 11848226Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.Type: GrantFiled: February 23, 2021Date of Patent: December 19, 2023Assignee: Applied Materials, Inc.Inventors: Anhthu Ngo, Zuoming Zhu, Balasubramanian Ramachandran, Paul Brillhart, Edric Tong, Anzhong Chang, Kin Pong Lo, Kartik Shah, Schubert S. Chu, Zhepeng Cong, James Francis Mack, Nyi O. Myo, Kevin Joseph Bautista, Xuebin Li, Yi-Chiau Huang, Zhiyuan Ye
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Publication number: 20230142778Abstract: A cassette for a workpiece processing system is provided. The cassette is configured to hold one or more replaceable parts, one or more workpieces and one or more pedestal protectors. The cassette includes a divider configured to separate the one or more replacement parts from the one or more workpieces and/or one or more pedestal protectors. The cassette is configured to be disposed in a storage chamber of a workpiece processing apparatus to facilitate automated replacement of replacement parts in one or more processing chambers. Workpiece processing systems and methods of replacing replacement parts in a workpiece processing system are also provided.Type: ApplicationFiled: November 7, 2022Publication date: May 11, 2023Inventors: Kin Pong Lo, Peter J. Lembesis
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Publication number: 20220301920Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of the disclosure relate to an edge ring. The edge ring may include an overhang ring.Type: ApplicationFiled: June 6, 2022Publication date: September 22, 2022Inventors: Kin Pong LO, Vladimir NAGORNY, Wei LIU, Theresa Kramer GUARINI, Bernard L. HWANG, Malcolm J. BEVAN, Jacob ABRAHAM, Swayambhu Prasad BEHERA
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Patent number: 11380575Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of the disclosure relate to an edge ring. The edge ring may include an overhang ring.Type: GrantFiled: July 27, 2020Date of Patent: July 5, 2022Assignee: Applied Materials, Inc.Inventors: Kin Pong Lo, Vladimir Nagorny, Wei Liu, Theresa Kramer Guarini, Bernard L. Hwang, Malcolm J. Bevan, Jacob Abraham, Swayambhu Prasad Behera
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Publication number: 20220178747Abstract: One or more embodiments described herein generally relate to systems and methods for calibrating an optical emission spectrometer (OES) used for processing semiconductor substrates. In embodiments herein, a light fixture is mounted to a plate within a process chamber. A light source is positioned within the light fixture such that it provides an optical path that projects directly at a window through which the OES looks into the process chamber for its reading. When the light source is on, the OES measures the optical intensity of radiation from the light source. To calibrate the OES, the optical intensity of the light source is compared at two separate times when the light source is on. If the optical intensity of radiation at the first time is different than the optical intensity of radiation at the second time, the OES is modified.Type: ApplicationFiled: March 27, 2020Publication date: June 9, 2022Inventors: Kin Pong LO, Lara HAWRYLCHAK, Malcolm J. BEVAN, Theresa Kramer GUARINI, Wei LIU, Bernard L. HWANG
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Publication number: 20220059342Abstract: Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.Type: ApplicationFiled: November 1, 2021Publication date: February 24, 2022Inventors: Lara HAWRYLCHAK, Schubert S. CHU, Tushar MANDREKAR, Errol C. SANCHEZ, Kin Pong LO
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Publication number: 20220028656Abstract: Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of the disclosure relate to an edge ring. The edge ring may include an overhang ring.Type: ApplicationFiled: July 27, 2020Publication date: January 27, 2022Inventors: Kin Pong LO, Vladimir NAGORNY, Wei LIU, Theresa Kramer GUARINI, Bernard L. HWANG, Malcolm J. BEVAN, Jacob ABRAHAM, Swayambhu Prasad BEHERA
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Patent number: 11164737Abstract: Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.Type: GrantFiled: August 10, 2018Date of Patent: November 2, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Lara Hawrylchak, Schubert S. Chu, Tushar Mandrekar, Errol C. Sanchez, Kin Pong Lo
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Patent number: 11049719Abstract: In one implementation, a processing system includes a first transfer chamber coupling to at least one epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a first plasma chamber coupled to the second transfer chamber for removing oxides from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber. The transition station connects to the first transfer chamber and the second transfer chamber, and the transition station includes a second plasma chamber for removing contaminants from the surface of the substrate.Type: GrantFiled: August 7, 2018Date of Patent: June 29, 2021Assignee: Applied Materials, Inc.Inventors: Lara Hawrylchak, Kin Pong Lo, Errol C. Sanchez, Schubert S. Chu, Tushar Mandrekar
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Publication number: 20210175115Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.Type: ApplicationFiled: February 23, 2021Publication date: June 10, 2021Inventors: Anhthu NGO, Zuoming ZHU, Balasubramanian RAMACHANDRAN, Paul BRILLHART, Edric TONG, Anzhong CHANG, Kin Pong LO, Kartik SHAH, Schubert S. CHU, Zhepeng CONG, James Francis MACK, Nyi O. MYO, Kevin Joseph BAUTISTA, Xuebin LI, Yi-Chiau HUANG, Zhiyuan YE
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Patent number: 10971357Abstract: A method of modifying a layer in a semiconductor device is provided. The method includes depositing a low quality film on a semiconductor substrate, and exposing a surface of the low quality film to a first process gas comprising helium while the substrate is heated to a first temperature, and exposing a surface of the low quality film to a second process gas comprising oxygen gas while the substrate is heated to a second temperature that is different than the first temperature. The electrical properties of the film are improved by undergoing the aforementioned processes.Type: GrantFiled: October 4, 2018Date of Patent: April 6, 2021Assignee: Applied Materials, Inc.Inventors: Wei Liu, Theresa Kramer Guarini, Linlin Wang, Malcolm Bevan, Johanes S. Swenberg, Vladimir Nagorny, Bernard L. Hwang, Kin Pong Lo, Lara Hawrylchak, Rene George
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Patent number: 10930543Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.Type: GrantFiled: August 23, 2018Date of Patent: February 23, 2021Assignee: Applied Materials, Inc.Inventors: Anhthu Ngo, Zuoming Zhu, Balasubramanian Ramachandran, Paul Brillhart, Edric Tong, Anzhong Chang, Kin Pong Lo, Kartik Shah, Schubert S. Chu, Zhepeng Cong, James Francis Mack, Nyi O. Myo, Kevin Joseph Bautista, Xuebin Li, Yi-Chiau Huang, Zhiyuan Ye
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Patent number: 10727093Abstract: Embodiments disclosed herein relate to a light pipe structure for thermal processing of semiconductor substrates. In one embodiment, a light pipe window structure for use in a thermal process chamber includes a transparent plate, and a plurality of light pipe structures formed in a transparent material that is coupled to the transparent plate, each of the plurality of light pipe structures comprising a reflective surface and having a longitudinal axis disposed in a substantially perpendicular relation to a plane of the transparent plate.Type: GrantFiled: March 12, 2015Date of Patent: July 28, 2020Assignee: Applied Materials, Inc.Inventors: Paul Brillhart, Joseph M. Ranish, Aaron Muir Hunter, Edric Tong, James Francis Mack, Kin Pong Lo, Errol Antonio C. Sanchez, Zhiyuan Ye, Anzhong Chang
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Publication number: 20200111659Abstract: A method of modifying a layer in a semiconductor device is provided. The method includes depositing a low quality film on a semiconductor substrate, and exposing a surface of the low quality film to a first process gas comprising helium while the substrate is heated to a first temperature, and exposing a surface of the low quality film to a second process gas comprising oxygen gas while the substrate is heated to a second temperature that is different than the first temperature. The electrical properties of the film are improved by undergoing the aforementioned processes.Type: ApplicationFiled: October 4, 2018Publication date: April 9, 2020Inventors: Wei LIU, Theresa Kramer GUARINI, Linlin WANG, Malcolm BEVAN, Johanes S. SWENBERG, Vladimir NAGORNY, Bernard L. HWANG, Kin Pong LO, Lara HAWRYLCHAK, Rene GEORGE
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Patent number: 10458040Abstract: Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome.Type: GrantFiled: November 10, 2017Date of Patent: October 29, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Paul Brillhart, Anzhong Chang, Edric Tong, Kin Pong Lo, James Francis Mack, Zhiyuan Ye, Kartik Shah, Errol Antonio C. Sanchez, David K. Carlson, Satheesh Kuppurao, Joseph M. Ranish
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Patent number: 10306708Abstract: Embodiments of the disclosure generally relate to a reflector for use in a thermal processing chamber. In one embodiment, the thermal processing chamber generally includes an upper dome, a lower dome opposing the upper dome, the upper dome and the lower dome defining an internal volume of the processing chamber, a substrate support disposed within the internal volume, and a reflector positioned above and proximate to the upper dome, wherein the reflector has a heat absorptive coating layer deposited on a side of the reflector facing the substrate support.Type: GrantFiled: November 28, 2017Date of Patent: May 28, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Kin Pong Lo, Paul Brillhart, Balasubramanian Ramachandran, Satheesh Kuppurao, Daniel Redfield, Joseph M. Ranish, James Francis Mack, Kailash Kiran Patalay, Michael Olsen, Eddie Feigel, Richard Halpin, Brett Vetorino
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Patent number: 10269614Abstract: Implementations of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one implementation, the susceptor includes a first rim surrounding and coupled to an inner region, and a second rim disposed between the inner rim and the first rim. The second rim includes an angled support surface having a plurality of cut-outs formed therein, and the angled support surface is inclined with respect to a top surface of the inner region.Type: GrantFiled: October 16, 2015Date of Patent: April 23, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Schubert S. Chu, Kartik Shah, Anhthu Ngo, Karthik Ramanathan, Nitin Pathak, Nyi O. Myo, Paul Brillhart, Richard O. Collins, Kevin Joseph Bautista, Edric Tong, Zhepeng Cong, Anzhong Chang, Kin Pong Lo, Manish Hemkar
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Patent number: D858192Type: GrantFiled: April 27, 2018Date of Patent: September 3, 2019Assignee: APPLIED MATERIALS, INC.Inventor: Kin Pong Lo