Patents by Inventor Kippei SUGITA
Kippei SUGITA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170278735Abstract: In a method for acquiring data indicating an electrostatic capacitance between a focus ring and a measuring device includes a disc-shaped base substrate, sensor units arranged along an edge of the base substrate and a circuit substrate mounted on the base substrate, a processor acquires one or more first data sets respectively including a plurality of digital values indicating an electrostatic capacitance of a corresponding sensor unit. The measuring device is transferred to a region on the mounting table surrounded by the focus ring. The processor acquires second data sets when one or more digital values or an average of the digital values included in each of said one or more first data sets exceeds a first threshold. The processor stores measurement data including the respective second data sets or averages of the digital values of each of the second data sets. The measuring device is unloaded from the chamber.Type: ApplicationFiled: March 21, 2017Publication date: September 28, 2017Applicant: TOKYO ELECTRON LIMITEDInventors: Kippei SUGITA, Tomohide MINAMI
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Patent number: 9708507Abstract: A method for improving a chemical resistance of a polymerized film, which is formed on a surface of a target object and to be processed by a chemical, includes: consecutively performing a treatment for improving the chemical resistance of the polymerized film subsequent to formation of the polymerized film within a processing chamber of a film forming apparatus where the polymerized film is formed, without unloading the target object from the processing chamber.Type: GrantFiled: February 26, 2015Date of Patent: July 18, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Kippei Sugita, Tatsuya Yamaguchi, Yoshinori Morisada, Makoto Fujikawa
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Publication number: 20160363433Abstract: Electrostatic capacitance can be measured with high directivity in a specific direction. A sensor chip that measures the electrostatic capacitance includes a first electrode, a second electrode and a third electrode. The first electrode has a first portion. The second electrode has a second portion extended on the first portion of the first electrode, and is insulated from the first electrode within the sensor chip. The third electrode has a front face extended in a direction which intersects with the first portion of the first electrode and the second portion of the second electrode, and is provided on the first portion and the second portion. The third electrode is insulated from the first electrode and the second electrode within the sensor chip.Type: ApplicationFiled: June 10, 2016Publication date: December 15, 2016Inventors: Kippei Sugita, Tomohide Minami
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Publication number: 20160363556Abstract: A system of inspecting a focus ring is provided. The system includes a measuring device, a transfer device and an operation unit. The measuring device includes a base substrate, a sensor chip and a circuit board. The sensor chip has a sensor electrode and is provided along an edge of the base substrate. The circuit board is configured to output a high frequency signal to the sensor electrode and acquire a digital value indicating electrostatic capacitance based on a voltage amplitude in the sensor electrode. The transfer device is configured to scan the measuring device. The operation unit is configured to obtain difference values by performing a difference operation with respect to the digital values acquired by the measuring device at multiple positions along a direction which intersects with an inner periphery of the focus ring.Type: ApplicationFiled: June 10, 2016Publication date: December 15, 2016Inventors: Kippei Sugita, Tomohide Minami
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Publication number: 20160280536Abstract: A hollow structure is manufactured by preparing a lower structure which includes a concave portion, depositing a sacrifice film composed of an organic film on the lower structure by a vapor deposition polymerization method to bury the concave portion with the sacrifice film, removing an unnecessary portion of the sacrifice film, forming an upper structure on the sacrifice film with the unnecessary portion removed, and forming an air gap between the lower structure and the upper structure by removing the sacrifice film.Type: ApplicationFiled: March 17, 2014Publication date: September 29, 2016Inventors: Kippei SUGITA, Hiroyuki HASHIMOTO
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Patent number: 9349584Abstract: A method for depositing a film is provided. In the method, an object to be processed is accommodated in a process chamber, and an insulating film made of a polymer thin film is deposited on a surface of the object to be processed by supplying a first source gas composed of an acid anhydride and a second source gas composed of a diamine into the process chamber that is evacuated. Next, the insulating film is modified so as to have a barrier function by stopping the supply of the second source gas into the process chamber and continuously supplying the first source gas into the process chamber.Type: GrantFiled: April 22, 2013Date of Patent: May 24, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Kippei Sugita, Hiroyuki Hashimoto, Muneo Harada
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Patent number: 9163311Abstract: Provided is a film forming apparatus for forming a film on a substrate maintained within a film forming container by supplying a raw material gas to the substrate. The film forming container includes a substrate maintaining unit, a supply mechanism configured to include a supply pipe with supply holes formed thereon to supply a raw material gas to the interior of the film forming container through the supply holes, an exhaust mechanism configured to include an exhaust pipe with exhaust holes formed thereon to exhaust gas from the interior of the film forming container through the exhaust holes, and a controller configured to control the substrate maintaining unit, the supply mechanism, and the exhaust mechanism. The supply holes and the exhaust holes are formed to face each other with the substrate maintained in the substrate maintaining unit interposed therebetween.Type: GrantFiled: December 21, 2011Date of Patent: October 20, 2015Assignee: TOKYO ELECTRON LIMITEDInventors: Harunari Hasegawa, Kippei Sugita, Atsushi Ando, Yoshiki Fukuhara, Makoto Takahashi
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Patent number: 9127358Abstract: A film forming apparatus for forming a polyimide film on a substrate installed within a film forming container. The apparatus includes: a first vaporizer configured to vaporize a first raw material in a solid state, and supply the vaporized first raw material gas to the substrate; a second vaporizer configured to vaporize a second raw material in a liquid state, and supply the vaporized second raw material gas to the substrate; a first pressure measurement unit configured to measure the internal pressure of the first vaporizer; a second pressure measurement unit configured to measure the internal pressure of the second vaporizer; and a controller configured to calculate a supply amount of the first and second raw material gases by the first and second pressure measurement units, respectively, and control the first and second vaporizers to supply the first and second raw material gases in a uniform amount.Type: GrantFiled: January 10, 2012Date of Patent: September 8, 2015Assignee: TOKYO ELECTRON LIMITEDInventors: Mitsuya Inoue, Yasunori Kumagai, Kippei Sugita
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Publication number: 20150240121Abstract: A method for improving a chemical resistance of a polymerized film, which is formed on a surface of a target object and to be processed by a chemical, includes: consecutively performing a treatment for improving the chemical resistance of the polymerized film subsequent to formation of the polymerized film within a processing chamber of a film forming apparatus where the polymerized film is formed, without unloading the target object from the processing chamber.Type: ApplicationFiled: February 26, 2015Publication date: August 27, 2015Inventors: Kippei SUGITA, Tatsuya YAMAGUCHI, Yoshinori MORISADA, Makoto FUJIKAWA
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Publication number: 20150087158Abstract: A method for depositing a film is provided. In the method, an object to be processed is accommodated in a process chamber, and an insulating film made of a polymer thin film is deposited on a surface of the object to be processed by supplying a first source gas composed of an acid anhydride and a second source gas composed of a diamine into the process chamber that is evacuated. Next, the insulating film is modified so as to have a barrier function by stopping the supply of the second source gas into the process chamber and continuously supplying the first source gas into the process chamber.Type: ApplicationFiled: April 22, 2013Publication date: March 26, 2015Inventors: Kippei Sugita, Hiroyuki Hashimoto, Muneo Harada
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Patent number: 8716130Abstract: The method includes forming a hole penetrating from one surface of a substrate to an electrode formed on the other surface of the substrate; forming an organic insulating film in the hole; removing at least a part of the organic insulating film formed in a bottom portion of the hole and not the organic insulating film formed on a side wall portion of the hole, to expose the electrode; cleaning an exposed surface of the electrode by using plasma of an inert gas; filling a conductive metal in the hole; removing at least a part of a surface of the organic insulating film by the reaction of oxygen plasma; and annealing the substrate in a dysoxidative atmosphere.Type: GrantFiled: April 4, 2011Date of Patent: May 6, 2014Assignee: Tokyo Electron LimitedInventors: Kippei Sugita, Kenji Matsuda, Hiroyuki Hashimoto, Muneo Harada
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Publication number: 20130089983Abstract: The method includes forming a hole penetrating from one surface of a substrate to an electrode formed on the other surface of the substrate; forming an organic insulating film in the hole; removing at least a part of the organic insulating film formed in a bottom portion of the hole and not the organic insulating film formed on a side wall portion of the hole, to expose the electrode; cleaning an exposed surface of the electrode by using plasma of an inert gas; filling a conductive metal in the hole; removing at least a part of a surface of the organic insulating film by the reaction of oxygen plasma; and annealing the substrate in a dysoxidative atmosphere.Type: ApplicationFiled: April 4, 2011Publication date: April 11, 2013Applicant: TOKYO ELECTRON LIMITEDInventors: Kippei Sugita, Kenji Matsuda, Hiroyuki Hashimoto, Muneo Harada
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Publication number: 20120269970Abstract: A cleaning method for a film deposition apparatus that deposits a polyimide film conveyed into a film deposition chamber by feeding a first source gas formed of dianhydride and a second source gas formed of diamine into the film deposition chamber, the method including the steps of: generating an oxygen atmosphere in the film deposition chamber, and removing polyimide remaining in the film deposition chamber by heating the film deposition chamber at a temperature of 360° C. to 540° C. in the oxygen atmosphere and oxidizing the polyimide.Type: ApplicationFiled: March 26, 2012Publication date: October 25, 2012Applicant: Tokyo Electron LimitedInventors: Yasuyuki IDO, Kippei Sugita, Tatsuya Yamaguchi
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Publication number: 20120180719Abstract: A film forming apparatus for forming a polyimide film on a substrate installed within a film forming container. The apparatus includes: a first vaporizer configured to vaporize a first raw material in a solid state, and supply the vaporized first raw material gas to the substrate; a second vaporizer configured to vaporize a second raw material in a liquid state, and supply the vaporized second raw material gas to the substrate; a first pressure measurement unit configured to measure the internal pressure of the first vaporizer; a second pressure measurement unit configured to measure the internal pressure of the second vaporizer; and a controller configured to calculate a supply amount of the first and second raw material gases by the first and second pressure measurement units, respectively, and control the first and second vaporizers to supply the first and second raw material gases in a uniform amount.Type: ApplicationFiled: January 10, 2012Publication date: July 19, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Mitsuya INOUE, Yasunori KUMAGAI, Kippei SUGITA
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Publication number: 20120180727Abstract: Provided is a film forming apparatus for forming a film on a substrate maintained within a film forming container by supplying a raw material gas to the substrate. The film forming container includes a substrate maintaining unit, a supply mechanism configured to include a supply pipe with supply holes formed thereon to supply a raw material gas to the interior of the film forming container through the supply holes, an exhaust mechanism configured to include an exhaust pipe with exhaust holes formed thereon to exhaust gas from the interior of the film forming container through the exhaust holes, and a controller configured to control the substrate maintaining unit, the supply mechanism, and the exhaust mechanism. The supply holes and the exhaust holes are formed to face each other with the substrate maintained in the substrate maintaining unit interposed therebetween.Type: ApplicationFiled: December 21, 2011Publication date: July 19, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Harunari HASEGAWA, Kippei SUGITA, Atsushi ANDO, Yoshiki FUKUHARA, Makoto TAKAHASHI
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Publication number: 20120160169Abstract: Provided is a film forming apparatus for forming a polyimide film on a substrate by supplying a first raw material gas formed as aromatic acid dianhydride and a second raw material gas formed as aromatic diamine to the substrate maintained within a film forming container, and thermally polymerizing the supplied first and second raw material gases on a surface of the substrate. The apparatus includes: a substrate maintaining unit within the film forming container; a substrate heating unit configured to heat the substrate; a supply mechanism within the film forming container, configured to include a supply pipe with supply holes for supplying the first and second raw material gases to the interior of the film forming container through the supply holes; and a controller configured to control the substrate maintaining unit, the substrate heating unit, and the supply mechanism.Type: ApplicationFiled: December 22, 2011Publication date: June 28, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Harunari HASEGAWA, Kippei SUGITA, Makoto TAKAHASHI
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Publication number: 20110023784Abstract: An evaporator includes a heating part that heats and sublimates a solid source material to generate a source gas; a supplying part that is provided above the heating part and supplies the solid source material to the heating part; a gas introduction part to which a carrier gas that transports the source gas generated in the heating part is introduced; and a gas discharging part that discharges the generated source gas along with the carrier gas. The carrier gas introduced from the gas introduction part flows through the heating part.Type: ApplicationFiled: March 11, 2010Publication date: February 3, 2011Inventors: Yusaku Kashiwagi, Kippei Sugita
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Publication number: 20110003078Abstract: An aqueous solution containing an adhesion promoter in an amount of 20 vol. % or more is heated and vaporized to a temperature of 80 to 100° C. to produce a water-containing adhesion promoter vapor, and the water-containing adhesion promoter vapor is adhered to and condensed on a surface of a substrate, to cause a heating and dehydrating reaction by which the adhesion promoter is adhered to the surface of the substrate.Type: ApplicationFiled: March 13, 2009Publication date: January 6, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Kippei Sugita, Hiroyuki Hashimoto, Muneo Harada
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Publication number: 20090294063Abstract: The present invention is to provide a plasma processing apparatus, whose structure can be simplified, and further, which is capable of forming highly effective plasma and obtaining a satisfactory vertical etching property without involving a problem concerning interference. In the plasma processing apparatus according to the invention, a ground electrode provided at a position opposite to a substrate mounting electrode is configured to be a counter electrode, whose potential is in a floating state, and radio frequency power is branched at an arbitrary position of the radio frequency antenna coil, which generates inductive discharge, into the counter electrode through a capacitor so as to share a part of the radio frequency power used for inductive discharge, thereby generating a self-bias in the counter electrode. In the system, there is provided a mechanism for controlling the radio frequency voltage to be applied to the floating electrode uniformly.Type: ApplicationFiled: August 7, 2009Publication date: December 3, 2009Applicant: ULVAC INC.Inventors: Toshio HAYASHI, Wei CHEN, Kippei SUGITA, Kouji KAGA
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Publication number: 20020170678Abstract: The present invention is to provide a plasma processing apparatus, whose structure can be simplified, and further, which is capable of forming highly effective plasma and obtaining a satisfactory vertical etching property without involving a problem concerning interference. In the plasma processing apparatus according to the invention, a ground electrode provided at a position opposite to a substrate mounting electrode is configured to be a counter electrode, whose potential is in a floating state, and radio frequency power is branched at an arbitrary position of the radio frequency antenna coil, which generates inductive discharge, into the counter electrode through a capacitor so as to share a part of the radio frequency power used for inductive discharge, thereby generating a self-bias in the counter electrode. In the system, there is provided a mechanism for controlling the radio frequency voltage to be applied to the floating electrode uniformly.Type: ApplicationFiled: May 15, 2002Publication date: November 21, 2002Inventors: Toshio Hayashi, Wei Chen, Kippei Sugita, Kouji Kaga