Abstract: Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes: a one-piece process kit shield having a cylindrical body having an upper portion and a lower portion; an adapter section extending radially outward and having a resting surface to support the one-piece process kit shield on walls of a chamber and a sealing surface on which a chamber lid rests to seal off an inner volume of the chamber when the one-piece process kit shield is placed in the chamber; a heat transfer channel extending through the adapter section; and a protruding section extending radially inward from the lower portion; a resting bracket having an upper portion coupled to the adapter section and a lower portion extending radially inward; a cover ring disposed beneath the protruding section; and a deposition ring disposed beneath the cover ring.

Abstract: Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes a deposition ring configured to be disposed on a substrate support designed to support a substrate having a given width, including: an annular band configured to rest on a lower ledge of the substrate support; an inner lip extending upwardly from an inner edge of the annular band, wherein an inner surface of the inner lip and an inner surface of the annular band together form a central opening having a width that is less than the given width, and wherein a depth between an upper surface of the annular band and an upper surface of the inner lip is between about 24 mm and about 38 mm; a channel disposed radially outward of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

Abstract: Methods and apparatus for changing the temperature of a substrate are provided. In some embodiments, a method includes: placing a substrate onto a support surface of a substrate support disposed within an inner volume of a cooling chamber; moving at least one of the substrate support or a plate disposed in the cooling chamber opposite the substrate support from a first position, in which the substrate is placed onto the support surface, to a second position, in which a second volume is created between the support surface and the plate, the second volume being smaller than and substantially sealed off from a remaining portion of the inner volume; flowing a gas into the second volume to increase a pressure within the second volume; and flowing a coolant through a plurality of channels disposed in at least one of the substrate support or the plate to cool the substrate.

Abstract: Embodiments of methods and apparatus for rapidly cooling a substrate are provided herein.

Abstract: Methods and apparatus for processing a substrate are disclosed herein. In some embodiments, an apparatus for processing a substrate includes: a substrate support having a substrate supporting surface including an electrically insulating coating; a substrate lift mechanism including a plurality of lift pins configured to move between a first position disposed beneath the substrate supporting surface and a second position disposed above the substrate supporting surface; and a connector configured to selectively provide an electrical connection between the substrate support and the substrate lift mechanism before the plurality of lift pins reach a plane of the substrate supporting surface.

Abstract: Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes: a one-piece process kit shield having a cylindrical body having an upper portion and a lower portion; an adapter section extending radially outward and having a resting surface to support the one-piece process kit shield on walls of a chamber and a sealing surface on which a chamber lid rests to seal off an inner volume of the chamber when the one-piece process kit shield is placed in the chamber; a heat transfer channel extending through the adapter section; and a protruding section extending radially inward from the lower portion; a resting bracket having an upper portion coupled to the adapter section and a lower portion extending radially inward; a cover ring disposed beneath the protruding section; and a deposition ring disposed beneath the cover ring.

Abstract: Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments, a one-piece process kit shield configured for use in a processing chamber for processing a substrate having a given diameter includes: a cylindrical body having an upper portion and a lower portion; an annular heat transfer channel disposed within the upper portion; and a cover ring section extending radially inward from the lower portion and having an annular leg extending from a bottom surface of the cover ring section, wherein the annular leg is configured to interface with a deposition ring to form a tortuous path between the bottom surface and the deposition ring.

Abstract: Methods and apparatus for processing a substrate are disclosed herein. In some embodiments, an apparatus for processing a substrate includes: a substrate support having a substrate supporting surface including an electrically insulating coating; a substrate lift mechanism including a plurality of lift pins configured to move between a first position disposed beneath the substrate supporting surface and a second position disposed above the substrate supporting surface; and a connector configured to selectively provide an electrical connection between the substrate support and the substrate lift mechanism before the plurality of lift pins reach a plane of the substrate supporting surface.

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate.

Abstract: Embodiments of the invention generally provide a process kit for use in a physical deposition chamber (PVD) chamber. In one embodiment, the process kit provides adjustable process spacing, centering between the cover ring and the shield, and controlled gas flow between the cover ring and the shield contributing to uniform gas distribution, which promotes greater process uniformity and repeatability along with longer chamber component service life.

Abstract: Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes a deposition ring configured to be disposed on a substrate support designed to support a substrate having a given width, including: an annular band configured to rest on a lower ledge of the substrate support; an inner lip extending upwardly from an inner edge of the annular band, wherein an inner surface of the inner lip and an inner surface of the annular band together form a central opening having a width that is less than the given width, and wherein a depth between an upper surface of the annular band and an upper surface of the inner lip is between about 24 mm and about 38 mm; a channel disposed radially outward of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

Abstract: Embodiments of a process kit for substrate process chambers are provided herein. In some embodiments, a process kit for a substrate process chamber may include a ring having a body and a lip extending radially inward from the body, wherein the body has a first annular channel formed in a bottom of the body; an annular conductive shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first annular channel of the ring; and a conductive member electrically coupling the ring to the conductive shield when the ring is disposed on the conductive shield.

Abstract: Embodiments of the invention generally provide a process kit for use in a physical deposition chamber (PVD) chamber. In one embodiment, the process kit provides adjustable process spacing, centering between the cover ring and the shield, and controlled gas flow between the cover ring and the shield contributing to uniform gas distribution, which promotes greater process uniformity and repeatability along with longer chamber component service life.

Abstract: Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments, a one-piece process kit shield includes a cylindrical body having an upper portion and a lower portion; a heat transfer channel extending through the upper portion; and a cover ring section extending radially inward from the lower portion.

Abstract: Embodiments of the present disclosure include methods and apparatus for controlling titanium-tungsten (TiW) target nodule formation. In some embodiments, a target includes: a source material comprising predominantly titanium (Ti) and tungsten (W), formed from a mixture of titanium powder and tungsten powder, wherein a grain size of a predominant quantity of the titanium powder is less than or equal to a grain size of a predominant quantity of the tungsten powder.

Abstract: Apparatus for processing substrates is disclosed herein. In some embodiments, an apparatus includes a first shield having a first end, a second end, and one or more first sidewalls disposed between the first and second ends, wherein the first end is configured to interface with a first support member of a process chamber to support the first shield in a position such that the one or more first sidewalls surround a first volume of the process chamber; and a second shield having a first end, a second end, and one or more second sidewalls disposed between the first and second ends of the second shield and about the first shield, wherein the first end of the second shield is configured to interface with a second support member of the process chamber to support the second shield such that the second shield contacts the first shield to form a seal therebetween.

Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a substrate support that may include a dielectric member having a surface to support a substrate thereon; one or more first conductive members disposed below the dielectric member and having a dielectric member facing surface adjacent to the dielectric member; and a second conductive member disposed about and contacting the one or more first conductive members such that RF energy provided to the substrate by an RF source returns to the RF source by traveling radially outward from the substrate support along the dielectric member facing surface of the one or more first conductive members and along a first surface of the second conductive member disposed substantially parallel to a peripheral edge surface of the one or more first conductive members after travelling along the dielectric layer facing surface.

Abstract: Apparatus for extending process kit components lifetimes are disclosed. In some embodiments, a process kit includes: a first ring having an inner wall defining an inner diameter, an outer wall defining an outer diameter, an upper surface between the inner wall and the outer wall, and an opposing lower surface between the inner wall and the outer wall, wherein a first portion of the upper surface proximate the inner wall is concave, and wherein a second portion of the upper surface extends horizontally away from the first portion; and a second ring having an upper surface and an opposing lower surface, wherein a first portion of the lower surface is configured to rest upon the second portion of the first ring, wherein a second portion of the lower surface is convex and extends into but does not touch the concave first portion of the upper surface of the first ring.

Abstract: Methods and apparatus for processing a substrate are disclosed herein. In some embodiments, an apparatus for processing a substrate includes: a substrate support having a substrate supporting surface including an electrically insulating coating; a substrate lift mechanism including a plurality of lift pins configured to move between a first position disposed beneath the substrate supporting surface and a second position disposed above the substrate supporting surface; and a connector configured to selectively provide an electrical connection between the substrate support and the substrate lift mechanism before the plurality of lift pins reach a plane of the substrate supporting surface.

Abstract: Thermal control of substrate carrier is described using a thermal fluid. In one example, a thermally controlled substrate support includes a top surface to support a substrate, the top surface being thermally coupled to substrate, a thermal fluid channel thermally coupled to the top surface to carry a thermal fluid, the thermal fluid to draw heat from and provide heat to the top surface, and a heat exchanger to supply thermal fluid to the thermal fluid channel, the heat exchanger alternately heating and cooling the thermal fluid to adjust the substrate temperature.