Patents by Inventor Kishor Purushottam Gadkaree

Kishor Purushottam Gadkaree has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110183841
    Abstract: A method for producing a low oxygen content activated carbon material includes heating a natural, non-lignocellulosic carbon precursor in an inert or reducing atmosphere to form a first carbon material, mixing the first carbon material with an inorganic compound to form an aqueous mixture, heating the aqueous mixture in an inert or reducing atmosphere to incorporate the inorganic compound into the first carbon material, removing the inorganic compound from the first carbon material to produce a second carbon material, and heating the second carbon material in an inert or reducing atmosphere to form the low oxygen content activated carbon material. The activated carbon material is suitable to form improved carbon-based electrodes for use in high energy density devices.
    Type: Application
    Filed: December 16, 2010
    Publication date: July 28, 2011
    Inventors: Kishor Purushottam Gadkaree, Jia Liu
  • Patent number: 7976587
    Abstract: The invention is directed to a carbon composition produced from a carbon precursor, a carbon precursor modifier, and an additive, wherein a mixture of the recited components is formed, the carbon precursor is cured, the resulting mixture carbonized to produce a porous carbon composition. Also disclosed are methods for preparing the carbon composition and for using the carbon composition to fabricate electrodes and electric double layer capacitors comprising the carbon composition.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: July 12, 2011
    Assignee: Corning Incorporated
    Inventors: Kishor Purushottam Gadkaree, Joseph Frank Mach
  • Patent number: 7927970
    Abstract: Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
    Type: Grant
    Filed: February 11, 2009
    Date of Patent: April 19, 2011
    Assignee: Corning Incorporated
    Inventors: Jeffrey Scott Cites, Kishor Purushottam Gadkaree, Richard Orr Maschmeyer
  • Publication number: 20110070493
    Abstract: A current collector and an electric double layer capacitor including a current collector. The current collector has a conductive layer with an electrode-facing surface and an opposing second surface, each surface having an area, and a textured coating formed over and in contact with at least a majority of the electrode-facing surface.
    Type: Application
    Filed: September 24, 2009
    Publication date: March 24, 2011
    Inventors: Kishor Purushottam Gadkaree, Felipe Miguel Joos, James Robert Lim, Kamjula Pattabhirami Reddy, John Earl Tosch
  • Patent number: 7903389
    Abstract: An ultracapacitor or hybrid capacitor includes an electrically non-conductive rigid or semi-rigid porous honeycomb separator structure having cells extending along a common direction and supporting current collector structure(s) thereon. The current collector structure may be porous and extend continuously on all inner surfaces of a cell of the honeycomb structure, or may extend along the common direction on separate portions of the inner surfaces of a cell. The material may desirably be an oxide or non-oxide ceramic, such as cordierite, silicon nitride, aluminum titanate, alumina, zircon, glass, or glass-ceramic.
    Type: Grant
    Filed: May 26, 2006
    Date of Patent: March 8, 2011
    Assignee: Corning Incorporated
    Inventors: Roy Joseph Bourcier, Kishor Purushottam Gadkaree, Mallanagouda Dyamanagouda Patil, Huan-Hung Sheng, Mark J Soulliere
  • Publication number: 20110020202
    Abstract: Sorbent bodies comprising activated carbon, processes for making them, and methods of using them. The sorbent bodies can be used to remove toxic elements from a fluid, such as from a gas stream. For instance, the sorbent bodies may be used to remove elemental mercury or mercury in an oxidized state from a coal combustion flue gas.
    Type: Application
    Filed: May 13, 2008
    Publication date: January 27, 2011
    Applicant: Corning Incorporated
    Inventors: Kishor Purushottam Gadkaree, Benedict Yorke Johnson, Pei Qiong Kuang, Anbo Liu, Youchun Shi
  • Patent number: 7875102
    Abstract: A method for managing the use of flow-through monolithic sorbents for the sorption of a trace contaminant from a fluid stream, which comprises: providing two or more flow-through monolithic sorbents having a trace contaminant sorbed thereon, wherein the flow-through monolithic sorbents are positioned in an initial series to allow for passing a fluid stream from an upstream inlet end of the series to a downstream outlet end of the series; removing an inlet end portion of the flow-through monolithic sorbents from the inlet end position of the series; moving a downstream portion of the flow-through monolithic sorbents from a downstream position in the series to the inlet end position of the series; and placing a replacement flow-through monolithic sorbent portion in a downstream position of the series.
    Type: Grant
    Filed: April 2, 2008
    Date of Patent: January 25, 2011
    Assignee: Corning Incorporated
    Inventors: Kishor Purushottam Gadkaree, David Lathrop Morse
  • Patent number: 7859827
    Abstract: An ultracapacitor or hybrid capacitor includes an electrically non-conductive rigid or semi-rigid porous honeycomb structure (12) having cells extending along a common direction and having an average density per unit area within in a plane perpendicular to the common direction exceeding 15.5 per square centimeter, desirably formed of a material that is stable at temperatures of 300° or more, such that high temperatures processing can be used to help ensure high purity of the final product. The material may desirably be an oxide or non-oxide ceramic, such as cordierite, silicon nitride, alumina, aluminum titanate, zircon, glass, or glass-ceramic.
    Type: Grant
    Filed: May 26, 2006
    Date of Patent: December 28, 2010
    Assignee: Corning Incorporated
    Inventors: Roy Joseph Bourcier, Kishor Purushottam Gadkaree, Mallanagouda Dyamanagouda Patil, Huan-Hung Sheng, Mark J Soulliere
  • Publication number: 20100263533
    Abstract: The present disclosure relates to methods of making and using activated carbon-containing coated substrates, and products made therefrom.
    Type: Application
    Filed: April 20, 2009
    Publication date: October 21, 2010
    Inventors: Kishor Purushottam Gadkaree, Andrew Fleitz Husted, James Robert Lim
  • Publication number: 20100239479
    Abstract: A process for removing at least one of As, Cd, Hg and Se from a fluid stream, comprising: (I) providing a plurality of Group A particles of a Group A sorbent material, said Group A sorbent material comprising: an activated carbon matrix defining a plurality of pores; sulfur; and an additive adapted for promoting the removal of at least one of As, Cd, Hg and Se from a fluid stream, wherein the additive is distributed throughout the activated carbon matrix; and (II) contacting the fluid stream with a plurality of Group A particles of the Group A sorbent material. The process can involve powder injection, a packed sorbent bed, a fluidized sorbent bed, and combinations thereof.
    Type: Application
    Filed: August 27, 2008
    Publication date: September 23, 2010
    Applicant: Corning Incorporated
    Inventors: Kishor Purushottam Gadkaree, Benedict Yorke Johnson, Pei Qiong Kuang, Anbo Liu
  • Publication number: 20100224954
    Abstract: Methods and apparatus for producing a semiconductor on insulator structure include: subjecting an implantation surface of a donor single crystal semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis, wherein a liquidus viscosity of the glass substrate is about 100,000 Poise or greater.
    Type: Application
    Filed: October 28, 2008
    Publication date: September 9, 2010
    Inventors: Kishor Purushottam Gadkaree, Matthew John Dejneka, Adam James Ellison
  • Patent number: 7790565
    Abstract: Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to a wet etching process.
    Type: Grant
    Filed: March 29, 2007
    Date of Patent: September 7, 2010
    Assignee: Corning Incorporated
    Inventors: Kishor Purushottam Gadkaree, Michael John Moore, Mark Andrew Stocker, Jiangwei Feng, Joseph Frank Mach
  • Publication number: 20100212495
    Abstract: A sorbent structure comprising a continuous activated carbon body in the form of a flow-through substrate; and an additive provided on the flow-through substrate, wherein the additive is capable of enhancing the sorption of CO2 on the sorbent structure. Methods of making the sorbent structure, its use for CO2 capture, and methods for regenerating the structure for further use.
    Type: Application
    Filed: February 26, 2009
    Publication date: August 26, 2010
    Inventors: Kishor Purushottam Gadkaree, Youchun Shi
  • Patent number: 7781361
    Abstract: Disclosed are methods and systems for regenerating mercury loaded activated carbon honeycomb catalyst beds. In one embodiment, the regeneration methods and systems disclosed herein can enable a more efficient and economical operation of a honeycomb based mercury removal system by, for example, allowing the reuse of a particular substrate multiple times.
    Type: Grant
    Filed: May 11, 2006
    Date of Patent: August 24, 2010
    Assignee: Corning Incorporated
    Inventors: Kishor Purushottam Gadkaree, Youchun Shi
  • Publication number: 20100199841
    Abstract: A composite comprising an inorganic substrate with a coating comprising activated carbon and a metal sulfide. The composite may be used, for example, for the removal of a contaminant, such as mercury, from a fluid stream.
    Type: Application
    Filed: April 22, 2010
    Publication date: August 12, 2010
    Inventors: Kishor Purushottam Gadkaree, Anbo Liu, Joseph Frank Mach
  • Publication number: 20100192769
    Abstract: Disclosed herein, without limitation, are activated carbon honeycomb catalyst beds and systems for removing mercury and other toxic metals from a process stream, i.e, from flue gas of a coal combustion system. The activated carbon honeycomb can for example remove greater than 90% mercury from flue gas with a simple design and without adding material to the flue gas. Also disclosed herein, and without limitation, are methods for manufacturing and using the disclosed honeycomb catalyst beds and systems.
    Type: Application
    Filed: April 12, 2010
    Publication date: August 5, 2010
    Inventors: Kishor Purushottam Gadkaree, Lin He, Youchun Shi
  • Publication number: 20100151328
    Abstract: An activated carbon material derived, for example, by carbonizing and activating a non-lignocellulosic carbon precursor has a structural order ratio less than or equal to 0.08, and a nitrogen content greater than 0.2 wt. %. The activated carbon material can also have a volumetric capacitance greater than or equal to 70 F/cm3, an area-specific resistance less than or equal to 0.1 ohm-cm2 and/or a specific surface area greater than 300 m2/g, and is suitable to form improved carbon-based electrodes for use in high energy density devices.
    Type: Application
    Filed: December 15, 2008
    Publication date: June 17, 2010
    Inventors: Kishor Purushottam Gadkaree, Joseph Frank Mach
  • Publication number: 20100150814
    Abstract: A method for producing an activated carbon material includes forming an aqueous mixture of a natural, non-lignocellulosic carbon precursor and an inorganic compound, heating the mixture in an inert or reducing atmosphere, cooling the heated mixture to form a first carbon material, and removing the inorganic compound to produce an activated carbon material. The activated carbon material is suitable to form improved carbon-based electrodes for use in high energy density devices.
    Type: Application
    Filed: December 15, 2008
    Publication date: June 17, 2010
    Inventors: Kishor Purushottam Gadkaree, Joseph Frank Mach
  • Publication number: 20100127418
    Abstract: The present disclosure relates to methods and apparatuses for continuous firing of shaped bodies in one cycle, in particular a continuous method for heat treatment and/or control oxidation of shaped bodies by passing them through a roller hearth furnace on furnace trays.
    Type: Application
    Filed: February 6, 2009
    Publication date: May 27, 2010
    Inventors: Ronald Alan Davidson, Gregory Paul Dillon, James Gerard Fagan, Kishor Purushottam Gadkaree
  • Publication number: 20100127343
    Abstract: Methods and apparatus for forming a semiconductor on glass-ceramic structure provide for: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a precursor glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer to thereby form an intermediate semiconductor on precursor glass structure; sandwiching the intermediate semiconductor on precursor glass structure between first and second support structures; applying pressure to one or both of the first and second support structures; and subjecting the intermediate semiconductor on precursor glass structure to heat-treatment step to crystallize the precursor glass resulting in the formation of a semiconductor on glass-ceramic structure.
    Type: Application
    Filed: November 26, 2008
    Publication date: May 27, 2010
    Inventors: Christopher Paul Daigler, Kishor Purushottam Gadkaree, Joseph Frank Mach, Steven Alvin Tietje