Abstract: A method for manufacturing a printed-circuit board including: a capacitive element forming step of embedding a capacitive element in a substrate resin layer inside a substrate that includes a plurality of wiring layers laminated with the substrate resin layer interposed in between, the capacitive element forming step including forming a lower electrode using a conductive layer on one of the plurality of wiring layers, or using one of the plurality of wiring layers; forming a crystalline metal oxide-containing capacitor dielectric film at a temperature at or below a heat-resistant temperature of the substrate resin layer, and at or above room temperature; and forming an upper electrode on an upper surface of the capacitor dielectric film on the side opposite to the lower electrode.

Abstract: A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film and a film treatment process for improving film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is being maintained by a high-density plasma radiation treatment based upon ion and radical reactions and which contains at least oxygen at an ion current density higher than 5 mA/cm2 are carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film which is excellent in film quality can be manufactured inexpensively by a low-temperature treatment.

Abstract: A capacitor includes a first electrode, a dielectric layer, and a second electrode that are sequentially stacked. The dielectric layer has a stacked layer structure including a predetermined number of hafnium oxide sublayers and predetermined number of tantalum oxide sublayers. The number, materials, and thicknesses of the sublayers are determined so that the thickness ratio has a range in which, in voltage-leakage current characteristics showing the relationship between the voltage between the first and second electrodes and the leakage current, a start voltage at which the slope of an increase in the current starts to discontinuously increase satisfies an electric field strength of 3 [MV/cm] or more when the ratio of the total thickness of the predetermined number of tantalum oxide sublayers to the total thickness of the dielectric layer is varied, and the thickness ratio is within the range such that the start voltage is within the range.

Abstract: A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film, and a film treatment process for improving the film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is maintained by a high-density plasma radiation treatment based upon ion and radical reactions, and which contains at least oxygen at an ion current density higher than 5 mA/cm2 are carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film, which is excellent in film quality, can be manufactured inexpensively by a low-temperature treatment.

Abstract: A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film and a film treatment process for improving film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is being maintained by a high-density plasma radiation treatment based upon ion and radical reactions and which contains at least oxygen at an ion current density higher than 5 mA/cm2 are carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film which is excellent in film quality can be manufactured inexpensively by a low-temperature treatment.

Abstract: A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film and a film treatment process for improving film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is being maintained by a high-density plasma radiation treatment based upon ion and radical reactions and which contains at least oxygen at an ion current density higher than 5 mA/cm2 are carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film which is excellent in film quality can be manufactured inexpensively by a low-temperature treatment.

Abstract: A method of manufacturing an electronic component having a capacitor element and a resistor element, in which such capacitor element and such resistor element are individually formed in the material layer (for example, a tantalum oxide film formed by the CVD process) by locally subjecting such material layer to different kinds of treatment, such as nitriding and oxidation, is provided. There is also provided a method of manufacturing a semiconductor device having a capacitor element and a resistor element, in which such capacitor element and such resistor element are individually formed in the same material layer by locally subjecting such material layer to different kinds of treatment. There is still also provided a semiconductor device having a capacitor element and a resistor element thus formed.

Abstract: A method of manufacturing an electronic component having a capacitor element and a resistor element, in which such capacitor element and such resistor element are individually formed in the material layer (for example, a tantalum oxide film formed by the CVD process) by locally subjecting such material layer to different kinds of treatment, such as nitriding and oxidation, is provided. There is also provided a method of manufacturing a semiconductor device having a capacitor element and a resistor element, in which such capacitor element and such resistor element are individually formed in the same material layer by locally subjecting such material layer to different kinds of treatment. There is still also provided a semiconductor device having a capacitor element and a resistor element thus formed.