Abstract: A detector includes a semiconductor layer included in a detection region and a peripheral region, and having a first surface and a second surface opposite to the first surface, and a wiring structure included in at least the detection region, and disposed between a space on the first surface side with respect to the semiconductor layer and a space on the second surface side with respect to the semiconductor layer, wherein a thickness of the semiconductor layer in at least a part of the detection region is smaller than a thickness of the peripheral region including the semiconductor layer, and the thickness of the semiconductor layer is larger than a distance between the first surface in the detection region and the space on the first surface side, and a distance between the second surface in the detection region and the space on the second surface side.

Abstract: A detector includes a semiconductor layer included in a detection region and a peripheral region, and having a first surface and a second surface opposite to the first surface, and a wiring structure included in at least the detection region, and disposed between a space on the first surface side with respect to the semiconductor layer and a space on the second surface side with respect to the semiconductor layer, wherein a thickness of the semiconductor layer in at least a part of the detection region is smaller than a thickness of the peripheral region including the semiconductor layer, and the thickness of the semiconductor layer is larger than a distance between the first surface in the detection region and the space on the first surface side, and a distance between the second surface in the detection region and the space on the second surface side.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a substrate. The substrate includes an electrode layer, an insulating layer arranged on the electrode layer, and a semiconductor layer arranged on the insulating layer. The semiconductor layer includes a first semiconductor region of a first conductivity type, a second semiconductor region configured to accumulate charges generated by photoelectric conversion, the second semiconductor region being arranged on the first semiconductor region and having a second conductivity type opposite to the first conductivity type, and a third semiconductor region of the second conductivity type to which the charges accumulated in the second semiconductor region are transferred.

Abstract: The present invention provides a light-emitting device including a pixel block including light-emitting elements disposed on a long substrate and aligned in the longitudinal direction of the substrate, pixel circuits connected to the light-emitting elements, a control signal line connected to the pixel circuits, and a pixel block select circuit connected to the control signal line and configured to output a control signal to the pixel circuits. The pixel circuits are divided into a plurality of groups. The control signal line includes first and second interconnection portions. The first interconnection portion is disposed along the longitudinal direction of the substrate and connected to the pixel circuits. The second interconnection portion is disposed in a region between the groups and connected to the pixel block select circuit. The first interconnection portion and the second interconnection portion are connected to each other in the region between the groups.

Abstract: Provided is an organic light emitting device, including: a lower electrode; an upper electrode and a substrate having an electrode pad portion, in which when an angle formed by a slant in section of a film end in a region between the lower electrode and the electrode pad portion and a surface of the substrate is given as ?1, Formula (1) and Formula (2) are satisfied; and when an angle formed by a slant in section of a film end in at least a part of other regions than the region between the lower electrode and the electrode pad portion and the surface of the substrate is given as ?3, Formula (3) and Formula (4) are satisfied. tan(?1)=d1/d2??(1) tan(?1)<0.2??(2) tan(?3)=d3/d4??(3) tan(?3)?0.

Abstract: The present invention provides a light-emitting device including a pixel block including light-emitting elements disposed on a long substrate and aligned in the longitudinal direction of the substrate, pixel circuits connected to the light-emitting elements, a control signal line connected to the pixel circuits, and a pixel block select circuit connected to the control signal line and configured to output a control signal to the pixel circuits. The pixel circuits are divided into a plurality of groups. The control signal line includes first and second interconnection portions. The first interconnection portion is disposed along the longitudinal direction of the substrate and connected to the pixel circuits. The second interconnection portion is disposed in a region between the groups and connected to the pixel block select circuit. The first interconnection portion and the second interconnection portion are connected to each other in the region between the groups.

Abstract: An imaging device includes a substrate, a plurality of pixel electrodes, a conductive line that is disposed between the substrate and the plurality of pixel electrodes, a common electrode portion facing the plurality of pixel electrodes, a plurality of photoelectric conversion portions each of which is disposed between a corresponding one of the plurality of pixel electrodes and the common electrode portion, and a pad portion that is used for supplying an electric potential to the common electrode portion from the outside. The pad portion includes an electroconductive film that is included in the common electrode portion.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a substrate. The substrate includes an electrode layer, an insulating layer arranged on the electrode layer, and a semiconductor layer arranged on the insulating layer. The semiconductor layer includes a first semiconductor region of a first conductivity type, a second semiconductor region configured to accumulate charges generated by photoelectric conversion, the second semiconductor region being arranged on the first semiconductor region and having a second conductivity type opposite to the first conductivity type, and a third semiconductor region of the second conductivity type to which the charges accumulated in the second semiconductor region are transferred.

Abstract: Provided is an organic light emitting device, including: a substrate; and a lower electrode, an organic compound layer including an emission layer, and an upper electrode sequentially provided on the substrate, in which: the organic compound layer covers the lower electrode; the upper electrode covers the organic compound layer; the upper electrode is electrically connected to a wiring connecting portion provided in the substrate; and when an angle formed between a tilt of a section of an end in at least a partial region of the organic compound layer and a surface of the substrate is represented by ?1, the following formulas (1) and (2) are satisfied: tan(?1)=d1/d2??(1) tan(?1)?0.2??(2) in the formula (1), d1 represents a thickness of the organic compound layer and d2 represents a taper width of the section of the end of the organic compound layer.

Abstract: Provided is an organic light emitting device, including: a lower electrode; an upper electrode and a substrate having an electrode pad portion, in which when an angle formed by a slant in section of a film end in a region between the lower electrode and the electrode pad portion and a surface of the substrate is given as ?1, Formula (1) and Formula (2) are satisfied; and when an angle formed by a slant in section of a film end in at least a part of other regions than the region between the lower electrode and the electrode pad portion and the surface of the substrate is given as ?3, Formula (3) and Formula (4) are satisfied. tan(?1)=d1/d2??(1) tan(?1)<0.2??(2) tan(?3)=d3/d4??(3) tan(?3)?0.

Abstract: A display device includes an array of pixels including a plurality of organic EL elements each having a pair of electrodes and an organic compound layer including a light-emitting layer and disposed between the pair of electrodes and includes a protective layer disposed on the plurality of the organic EL elements. The protective layer has a first protective layer made of an inorganic material, a second protective layer made of a resin material and disposed on the first protective layer, and a third protective layer made of an inorganic material and disposed on the second protective layer. The second protective layer includes lenses for diverging at least part of light emitted from the light-emitting layer. The lenses have an elongated concave shape.

Abstract: An optical absorption layer having a plurality of openings corresponding to lenses is provided between a lens array and a first electrode. An edge of each of the openings is provided such that light entering in a normal direction of a substrate and traveling through an area where the corresponding lens has a maximum inclination angle is blocked.

Abstract: A method of manufacturing a semiconductor chip including an integrated circuit and a through-electrode penetrating a semiconductor layer includes the steps of preparing a first substrate including a release layer and a semiconductor layer formed on the release layer; forming an integrated circuit in the semiconductor layer; forming, in the semiconductor layer, a hole or groove having a depth that does not reach the release layer; filling the hole or the groove with an electrical conductor; bonding a second substrate to the semiconductor layer to form a bonded structure; separating the bonded structure at the release layer to prepare the second substrate to which the semiconductor layer is transferred; and removing at least a portion of the reverse surface side of the semiconductor layer exposed by the separation to expose the bottom of the electrical conductor.

Abstract: A photoelectric conversion device includes visible-light filters, infrared light filters, pixels arrayed in a row direction and a column direction, and wiring layers disposed between the pixels and visible-light filters and infrared light filters. The pixels include first pixels disposed corresponding to the visible-light filters, and second pixels disposed corresponding to the infrared light filters. The shape and size of the first pixels and second pixels is the same in planar view. The second pixels are disposed between adjacent pixels of the first pixels in the row direction, column direction, and diagonal directions. At least one wiring layer of the wiring layers defines apertures corresponding to photoelectric conversion regions at the first pixels and second pixels. Apertures corresponding to photoelectric conversion regions of first pixels and apertures corresponding to photoelectric conversion regions of second pixels are of the same shape and size in planar view.

Abstract: A highly moisture-resistant liquid crystal display apparatus and a manufacturing method thereof suppresses display deterioration due to the occurrence of image retention without gap controllability and alignment-stability maintenance. The liquid crystal display apparatus includes: a first sealing member arranged at an outer periphery of a liquid crystal layer sandwiched between a pair of substrates; and a second sealing member arranged at an outer periphery of the first sealing member in contact with the pair of substrates. The second sealing member 16 is formed from an alkylsiloxane compound as a main ingredient which is formed into an inorganic film by irradiation with an ultraviolet radiation. The alkylsiloxane compound is a di-alkylsiloxane compound or di-methyl-siloxane compound.

Abstract: A method of manufacturing a semiconductor device includes the steps of forming a plurality of first integrated circuits on the surface side of a first semiconductor substrate; forming a plurality of second integrated circuits in a semiconductor layer that is formed on a release layer provided on a second semiconductor substrate; bonding the two semiconductor substrates so that electrically bonding portions are bonded to each other to form a bonded structure; separating the second semiconductor substrate from the bonded structure at the release layer to transfer, to the first semiconductor substrate, the semiconductor layer in which the plurality of second integrated circuits are formed; and dicing the first semiconductor substrate to obtain stacked chips each including the first integrated circuit and the second integrated circuit.

Abstract: A method of manufacturing a semiconductor device includes the steps of forming a plurality of first integrated circuits on the surface side of a first semiconductor substrate; forming a plurality of second integrated circuits in a semiconductor layer that is formed on a release layer provided on a second semiconductor substrate; bonding the two semiconductor substrates so that electrically bonding portions are bonded to each other to form a bonded structure; separating the second semiconductor substrate from the bonded structure at the release layer to transfer, to the first semiconductor substrate, the semiconductor layer in which the plurality of second integrated circuits are formed; and dicing the first semiconductor substrate to obtain stacked chips each including the first integrated circuit and the second integrated circuit.

Abstract: At least one of the pixels has a first region and a second region that are the same in color but different in viewing angle characteristic, and includes a switching circuit configured to independently turn on or off each of the organic EL elements provided in the respective first and second regions.

Abstract: A display device includes an array of pixels including a plurality of organic EL elements each having a pair of electrodes and an organic compound layer including a light-emitting layer and disposed between the pair of electrodes and includes a protective layer disposed on the plurality of the organic EL elements. The protective layer has a first protective layer made of an inorganic material, a second protective layer made of a resin material and disposed on the first protective layer, and a third protective layer made of an inorganic material and disposed on the second protective layer. The second protective layer includes lenses for diverging at least part of light emitted from the light-emitting layer. The lenses have an elongated concave shape.

Abstract: A display module includes a display panel, a unit disposed on an outer side of the display panel, and an adhesive sheet with which the display panel and the unit are stuck together. The adhesive sheet has a first adhesive surface adhering to the display panel and a second adhesive surface adhering to the unit. The edge of the first adhesive surface and the edge of the second adhesive surface are displaced from each other in the adhesive surface direction.