Abstract: This invention is to improve the reproducibility and yield in separating a bonded substrate stack. A bonded substrate stack having a porous layer inside is held by substrate holding portions 105 and 106, and a fluid is injected from a nozzle to the porous layer of the bonded substrate stack, thereby separating the bonded substrate stack at the porous layer. The variation in pressure of the fluid is suppressed within a predetermined range by a servo-driven pump.

Abstract: A detection apparatus for detecting a feature portion of a composite member having a structure in which a first member having a separation layer inside is brought into tight contact with a second member. The composite member has, as the feature portion, a portion at which a peripheral edge of the first member projects outside a peripheral edge of the second member. The apparatus includes a shift detection section which detects a shift between the peripheral edge of the first member and the peripheral edge of the second member along an outer periphery of the composite member and a determination section which determines the feature portion on the basis of a detection result by the shift detection section.

Abstract: A semiconductor device is manufactured using the method including the steps of anodizing a semiconductor substrate to form a porous semiconductor layer on a semiconductor region of the semiconductor substrate; forming a non-porous semiconductor layer on the porous semiconductor layer; forming a semiconductor element and/or semiconductor integrated circuit in the non-porous semiconductor layer; forming kerfs from a surface side of the non-porous semiconductor layer toward the semiconductor region; and applying a pressure of a fluid to the porous semiconductor layer such that the desired region of the semiconductor element and/or semiconductor integrated circuit is separated from the semiconductor substrate.

Abstract: This invention is to provide a processing system suitable for manufacturing an SOI substrate. A processing system includes a scalar robot for conveying a bonded substrate stack held by a robot hand, and a centering apparatus, separating apparatus, inverting apparatus, and cleaning/drying apparatus disposed at substantially equidistant positions from a driving shaft of the scalar robot. When the robot hand is pivoted about the driving shaft in the horizontal plane and moved close to or away from the driving shaft, a bonded substrate stack or separated substrate is conveyed among the processing apparatuses.

Abstract: This invention is to provide a processing system suitable for manufacturing an SOI substrate. A processing system includes a scalar robot for conveying a bonded substrate stack held by a robot hand, and a centering apparatus, separating apparatus, inverting apparatus, and cleaning/drying apparatus disposed at substantially equidistant positions from a driving shaft of the scalar robot. When the robot hand is pivoted about the driving shaft in the horizontal plane and moved close to or away from the driving shaft, a bonded substrate stack or separated substrate is conveyed among the processing apparatuses.

Abstract: The present invention provides a semiconductor substrate comprising a semiconductor layer 3 formed on a supporting substrate 1 with interposition of an insulating layer 2 therebetween, wherein a mark is formed in a region other than a surface region of the semiconductor layer; and a process for producing the semiconductor substrate.

Abstract: There is provided a method of manufacturing a substrate having a partial insulating layer under a semiconductor layer. A partial SOI substrate (40) is obtained by performing steps of forming the first substrate which has a separation layer, the first semiconductor layer (13) on the separation layer, a partial insulating layer (14a) on the first semiconductor layer (13), and second semiconductor layers (15b, 16b) on the first semiconductor layer (13) exposed in the partial insulating layer (14a) and partial insulating layer (14a), bonding the second substrate (20) to the second semiconductor layers (15b, 16b) on the first substrate to form a bonded substrate stack, and splitting the bonded substrate stack at the separation layer.

Abstract: This invention is to guarantee that in separating a plate member such as a bonded substrate stack, a fluid is injected to an appropriate portion of the plate member. While a bonded substrate stack (50) is rotated, the vertical position of its peripheral portion is measured throughout its perimeter by a measuring device (150). Then, while the vertical position of a nozzle (120) is dynamically adjusted on the basis of the measurement result, and at the same time, the bonded substrate stack (50) is rotated, the bonded substrate stack (50) is separated into two substrates at a porous layer by injecting a fluid ejected from the nozzle (120).

Abstract: There is provided a method of manufacturing a substrate which has a partial insulating layer under a semiconductor layer. After the first substrate (10c) is formed, it is bonded to the second substrate (20), thereby forming a bonded substrate stack (30). Then, the bonded substrate stack (30) is split at a separation layer (15). In the step of forming the first substrate (10c), a partial insulating layer (12a) is formed on the substrate, a single-crystal Si layer (13) is grown in the partial insulating layer (12a), and a polysilicon layer (14) is grown on the partial insulating layer (12a). After that, ions are implanted into the substrate, thereby forming the separation layer (15) inside the substrate.

Abstract: This invention is to appropriately separate a bonded substrate stack regardless of some distortion in the bonded substrate stack or the like. This separating apparatus includes a first nozzle which forms a jet with a large width and a second nozzle which forms a jet with a small width. When the outer portion of a bonded substrate stack is to be separated, a jet formed by the first nozzle is used. After that, when a portion inside the outer portion is to be separated, a jet formed by the second nozzle is used.

Abstract: A thin-film semiconductor device with a reduced influence on a device formation layer in separation and a method of manufacturing the device are provided. The manufacturing method includes the step of preparing a member having a semiconductor film with a semiconductor element and/or semiconductor integrated circuit on a separation layer, the separation step of separating the member at the separation layer by a pressure of a fluid, and the chip forming step of, after the separation step, forming the semiconductor film into chips.

Abstract: A technique capable of forming a high-quality nonporous layer with little defects is provided. When an average pore size and pore density are defined as D (nm) and N (pores/cm2), respectively, a silicon wafer is anodized to satisfy 0<N?1.9×1012 and 0.235 nm?D<91 nm to form a porous silicon region in the region near the upper surface of the porous silicon region.

Abstract: When a bonded substrate stack prepared by bonding a first substrate in which a single-crystal Si layer is formed on a porous layer, and an insulating layer is formed on the single-crystal Si layer to a second substrate is to be separated at the porous layer, serrate defects at the peripheral portion of the separated substrates are prevented. A fluid is ejected from an ejection nozzle (112) and injected into the porous layer of a bonded substrate stack (30) while rotating the bonded substrate stack (30) about an axis (C) in a direction (R), thereby separating the bonded substrate stack (30) into two substrates at the porous layer. When the peripheral portion of the bonded substrate stack (30) is to be separated, the ejection nozzle (112) is located within a range (B).

Abstract: A thin-film semiconductor device used for a display region and peripheral circuit region and a method of manufacturing the same are provided. A method of manufacturing a display device includes the step of preparing a member having, on a separation layer, a semiconductor film having a first region with a switching element and a second region with a peripheral circuit, the step of forming an image display portion on the first region, and the separation step of separating the first and second regions from the member.

Abstract: This invention is to guarantee that in separating a plate member such as a bonded substrate stack, a fluid is injected to an appropriate portion of the plate member. While a bonded substrate stack (50) is rotated, the vertical position of its peripheral portion is measured throughout its perimeter by a measuring device (150). Then, while the vertical position of a nozzle (120) is dynamically adjusted on the basis of the measurement result, and at the same time, the bonded substrate stack (50) is rotated, the bonded substrate stack (50) is separated into two substrates at a porous layer by injecting a fluid ejected from the nozzle (120).

Abstract: This invention is to provide a technique of separating bonded substrate stacks having porous layers at a high yield. A separating apparatus (100) has a pair of substrate holding portions (270, 280). A bonded substrate stack (50) is sandwiched from upper and lower sides and horizontally held by the substrate holding portions (270, 280) and rotated. A jet is ejected from a nozzle (260) and injected into the porous layer of the bonded substrate stack (50), thereby separating the bonded substrate stack (50) into two substrates at the porous layer. Another separating apparatus (5000) has a pair of substrate holding portions (270, 280), a nozzle (260) of rejecting a fluid to the porous layer of a bonded substrate stack (50), and an abrupt operation prevention mechanism (4000) for preventing the lower substrate holding portion (280) from abruptly moving downward but allowing it to moderately move when separating the bonded substrate stack (50).

Abstract: This invention is to provide an apparatus for separating a substrate having a porous layer at the porous layer. A bonded substrate stack (101) having a porous layer (101b) is supported by substrate holding portions (120, 150) while being rotated. High-speed, high-pressure water (jet) is ejected from a nozzle (102), so the jet is injected into the bonded substrate stack (101). The substrate holding portions (120, 150) hold the bonded substrate stack (101) such that the bonded substrate stack (101) can expand at its central portion due to the pressure of the injected water. This efficiently applies a force (separation force) that acts outward from the inside of the bonded substrate stack (101).

Abstract: This invention is to appropriately separate a bonded substrate stack regardless of some distortion in the bonded substrate stack or the like. This separating apparatus includes a first nozzle which forms a jet with a large width and a second nozzle which forms a jet with a small width. When the outer portion of a bonded substrate stack is to be separated, a jet formed by the first nozzle is used. After that, when a portion inside the outer portion is to be separated, a jet formed by the second nozzle is used.

Abstract: This invention is to appropriately separate a bonded substrate stack regardless of some distortion in the bonded substrate stack or the like. This separating apparatus includes a first nozzle which forms a jet with a large width and a second nozzle which forms a jet with a small width. When the outer portion of a bonded substrate stack is to be separated, a jet formed by the first nozzle is used. After that, when a portion inside the outer portion is to be separated, a jet formed by the second nozzle is used.

Abstract: A semiconductor device includes a porous layer, a structure which is formed on the porous layer and has a semiconductor region whose height of the sectional shape is larger than the width, and a strain inducing region which strains the structure by applying stress to it.