Abstract: A porous layer having a multilayered structure is formed. An Si substrate (102) to be processed is anodized in a first electrolytic solution (141, 151) while being held between an anode (106) and a cathode (104) in an anodizing bath (101). The first electrolytic solution (141, 151) is exchanged with a second electrolytic solution (142, 152). The Si substrate (102) is anodized again, thereby forming a porous layer having a multilayered structure on the Si substrate (102).

Abstract: This invention is to appropriately separate a bonded substrate stack regardless of some distortion in the bonded substrate stack or the like. This separating apparatus includes a position adjusting mechanism (140) for adjusting the position of a nozzle (120) which ejects a fluid. A bonded substrate stack (50) is separated while changing the level of the nozzle (120) stepwise by the position adjusting mechanism (140) in accordance with a program which is set in advance on the assumption that the bonded substrate stack (50) has a distortion within a predetermined range.

Abstract: To separate a composite member consisting of a plurality of bonded members without destructing or damaging it, a fluid is jetted against the composite member from a nozzle to separate it into a plurality of members at a position different from a bonding position.

Abstract: This invention is to support a plate member such as a bonded substrate stack in a horizontal state without coming into contact with one surface of the member and also to efficiently progress separation. Separation is executed while arranging a bonded substrate stack (50) generated by bonding a seed substrate (10) to a handle substrate (20) such that the seed substrate (10) remains on the lower side. At the first stage, the peripheral portion is separated while causing a first substrate support section (101) to chuck and support the central portion of the lower surface of the bonded substrate stack (50). Then, at the second stage, the central portion is separated while causing a second substrate support section (102) to support the lower peripheral portion and side of the bonded substrate stack (50).

Abstract: This invention is to guarantee that in separating a plate member such as a bonded substrate stack, a fluid is injected to an appropriate portion of the plate member. While a bonded substrate stack (50) is rotated, the vertical position of its peripheral portion is measured throughout its perimeter by a measuring device (150). Then, while the vertical position of a nozzle (120) is dynamically adjusted on the basis of the measurement result, and at the same time, the bonded substrate stack (50) is rotated, the bonded substrate stack (50) is separated into two substrates at a porous layer by injecting a fluid ejected from the nozzle (120).

Abstract: To separate a composite member consisting of a plurality of bonded members without destructing or damaging it, a fluid is jetted against the composite member from a nozzle to separate it into a plurality of members at a position different from a bonding position.

Abstract: This invention prevents defects generated when a bonded substrate stack having a separation layer is separated. A bonded substrate stack (101) having a porous layer (101b) is separated in two steps of the first and second processes. In the first process, a jet is ejected to the porous layer (101b) while rotating the bonded substrate stack (101) to partially separate the bonded substrate stack (101) while leaving the central portion of the porous layer (101b) as an unseparated region. In the second process, the jet is ejected to the porous layer (101b) while rotation of the bonded substrate stack (101) is stopped. A force is applied to the unseparated region from a predetermined direction to completely separate the bonded substrate stack (101). Also, the first region (peripheral portion) and second region (central portion) of the bonded substrate stack (101) having the porous layer (101b) are separated using a jet and ultrasonic wave, respectively.

Abstract: This invention prevents defects generated when a bonded substrate stack having a separation layer is separated. A bonded substrate stack (101) having a porous layer (101b) is separated in two steps of the first and second processes. In the first process, a jet is ejected to the porous layer (101b) while rotating the bonded substrate stack (101) to partially separate the bonded substrate stack (101) while leaving the central portion of the porous layer (101b) as an unseparated region. In the second process, the jet is ejected to the porous layer (101b) while rotation of the bonded substrate stack (101) is stopped. A force is applied to the unseparated region from a predetermined direction to completely separate the bonded substrate stack (101). Also, the first region (peripheral portion) and second region (central portion) of the bonded substrate stack (101) having the porous layer (101b) are separated using a jet and ultrasonic wave, respectively.

Abstract: A method of producing a semiconductor member comprises a first step of preparing a first member having a non-porous layer on a semiconductor substrate, and a second step of transferring the non-porous layer from the first member onto a second member, wherein use of the semiconductor substrate from which the non-porous layer is separated in the second step as a constituent material of the first member in the first step is conducted (n−1) times (“n” is a natural number not less than 2), the first and second steps are repeated n times, the semiconductor substrate is separated in n-th use in the second step and the separated semiconductor substrate is used for an use other than that of the first and second steps.

Abstract: This invention is to provide a processing system suitable for manufacturing an SOI substrate. A processing system includes a scalar robot for conveying a bonded substrate stack held by a robot hand, and a centering apparatus, separating apparatus, inverting apparatus, and cleaning/drying apparatus disposed at substantially equidistant positions from a driving shaft of the scalar robot. When the robot hand is pivoted about the driving shaft in the horizontal plane and moved close to or away from the driving shaft, a bonded substrate stack or separated substrate is conveyed among the processing apparatuses.

Abstract: This invention is to provide an apparatus for separating a substrate having a porous layer at the porous layer. A bonded substrate stack (101) having a porous layer (101b) is supported by substrate holding portions (120, 150) while being rotated. High-speed, high-pressure water (jet) is ejected from a nozzle (102), so the jet is injected into the bonded substrate stack (101). The substrate holding portions (120, 150) hold the bonded substrate stack (101) such that the bonded substrate stack (101) can expand at its central portion due to the pressure of the injected water. This efficiently applies a force (separation force) that acts outward from the inside of the bonded substrate stack (101).

Abstract: The peeling of a thin-film single-crystal from a substrate is carried out so that the directions of straight lines on the single-crystal surface made by planes on which the single-crystal is apt to cleave are different from the front line direction of the peeled single-crystal. This single-crystal is used in a solar cell and a drive circuit member of an image display element. A method is provided which prevents a decrease in quality and yield of a single crystal layer when it is peeled from a substrate. A flexible solar cell module having a thin film single-crystal layer is made so that its flexing direction is different from the single-crystal's cleaving direction. Thus, a thin-film single-crystal solar cell module having excellent durability and reliability due to a lack of defect or cracking during production and use, and a method for producing the same, is provided.

Abstract: When a semiconductor layer formed via a separation layer on a substrate is supported by a support member and a pulling force is then exerted on the support member to mechanically break the separation layer to thereby form a thin-film semiconductor, the substrate is held by vacuum and/or electrostatic attachment and separation of the thin-film epitaxial layer is initiated from an area other than an edge of the substrate. This provides a method capable of obtaining the thin-film epitaxial layer with excellent characteristics in a good yield and permitting repetitive uses of the substrate, without inducing lifting of the substrate due to the separation force overcoming the attaching force of the substrate when producing a semiconductor base material and a solar cell.

Abstract: An apparatus for separating a substrate having a porous layer at the porous layer is provided. A bonded substrate stack (101) having a porous layer (101b) is supported by substrate holding portions (108, 109) while being rotated. High-speed, high-pressure water (jet) is ejected from a nozzle (112) and injected against the bonded substrate stack (101), thereby physically separating the bonded substrate stack (101) into two substrates. The jet pressure is appropriately changed in accordance with progress of separation processing.

Abstract: This invention prevents defects generated when a bonded substrate stack having a separation layer is separated. A bonded substrate stack (101) having a porous layer (101b) is separated in two steps of the first and second processes. In the first process, a jet is ejected to the porous layer (101b) while rotating the bonded substrate stack (101) to partially separate the bonded substrate stack (101) while leaving the central portion of the porous layer (101b) as an unseparated region. In the second process, the jet is ejected to the porous layer (101b) while rotation of the bonded substrate stack (101) is stopped. A force is applied to the unseparated region from a predetermined direction to completely separate the bonded substrate stack (101). Also, the first region (peripheral portion) and second region (central portion) of the bonded substrate stack (101) having the porous layer (101b) are separated using a jet and ultrasonic wave, respectively.

Abstract: A method of manufacturing a semiconductor article comprises forming a doped layer containing an element capable of controlling the conductivity type at least on one of the surfaces of a semiconductor substrate, modifying the surface of the doped layer into a porous state to obtain a porous layer thinner than the doped layer, forming a non-porous layer on the porous layer to prepare a first article, bonding the first article and a second article so as to produce a multilayer structure having the porous layer in the inside thereof, and separating the multilayer structure along the porous layer.

Abstract: An apparatus for separating a substrate having a porous layer from the porous layer is provided. A bonded substrate stack having a porous layer is supported by substrate holders while being rotated. A jet nozzle ejects a high-speed, high-pressure liquid or water. The jet thrusts into the bonded substrate through a guide unit. The position in the x-axis direction of this guide unit is adjusted by a motor such that the jet is concentrated into the bonding interface of the bonded substrate stack.

Abstract: An object of this invention is to provide a substrate processing method capable of satisfactorily performing in etching in the step of removing a porous silicon layer by etching.

Abstract: This invention provides a method of manufacturing a thin-film semiconductor device by a smaller number of processes with reduced influence on a device formation layer at the time of separation. This manufacturing method includes the step of preparing a member having, on a separation layer, a semiconductor film having a semiconductor element and/or semiconductor integrated circuit, the step of forming kerfs from the semiconductor film side of the member, and the separation step of, after the kerf formation step, separating a desired region of the semiconductor element and/or semiconductor integrated circuit from the member.

Abstract: A thin-film semiconductor device used for a display region and peripheral circuit region and a method of manufacturing the same are provided. A method of manufacturing a display device includes the step of preparing a member having, on a separation layer, a semiconductor film having a first region with a switching element and a second region with a peripheral circuit, the step of forming an image display portion on the first region, and the separation step of separating the first and second regions from the member.