Abstract: An angular rate sensor and an acceleration sensor are sealed at the same sealing pressure. The sealing pressure at this time is put into a reduced pressure state below the atmospheric pressure in view of improving a detection sensitivity of the angular rate sensor. Even in the reduced pressure atmosphere, to improve the detection sensitivity of the acceleration sensor, a shift suppressing portion (damper) for suppressing shifts of a movable body of the acceleration sensor is provided. This shift suppressing portion includes a plurality of protruding portions integrally formed with the movable body and a plurality of protruding portions integrally formed with a peripheral portion, and the protruding portions are alternately disposed separately at equal intervals.

Abstract: Techniques capable of suppressing fixation between a movable electrode and a fixed electrode in an inertial sensor and preventing the inertial sensor from malfunctioning are provided. The movable electrode, the fixed electrode provided so as to face the movable electrode, a peripheral conductor facing both the movable electrode and the fixed electrode, and a demodulation circuit and a voltage adjustment circuit which adjust the electric potential of the peripheral conductor so that the electric potential of the peripheral conductor becomes the same as the electric potential of the movable electrode are provided, and a change in the capacitance between the movable electrode and the fixed electrode is detected.

Abstract: In order to provide an inertial sensor such as an acceleration sensor which can be downsized and in which a high SNR can be obtained as having a plurality of measurement ranges, an inertial sensor for detecting an inertial force of acceleration based on an electrostatic capacitance change of a detecting unit includes a plurality of detecting units D1 to D4 each having a different sensitivity defined by a ratio between an applied inertial force and physical quantity generated from each of the detecting units to provide the plurality of measurement ranges. Alternatively, when the inertial sensor includes N (a natural number of 2 or larger) pieces of movable units 6a to 6c, (N+1) or more types of measurement ranges are provided.

Abstract: A technique in which a false detection and a wrong diagnosis can be suppressed in a capacitance sensor represented by an acceleration sensor is provided. A first capacitative element and a second capacitative element, which configure a capacitance detection unit, and a third capacitative element and a fourth capacitative element, which configure a forced oscillation generation unit, are electrically separated from each other. That is, the diagnosis movable electrode that configures the third capacitative element and the fourth capacitative element is formed integrally with the movable part. On the other hand, the diagnosis fixed electrode and the diagnosis fixed electrode are electrically separated from the detection fixed electrode and the detection fixed electrode.

Abstract: As well as achieving both downsizing and thickness reduction and sensitivity improvement of a semiconductor device that has: a MEMS sensor formed by bulk micromachining technique such as an acceleration sensor and an angular rate sensor; and an LSI circuit, a packaging structure of the semiconductor device having the MEMS sensor and the LSI circuit can be simplified. An integrated circuit having MISFETs and wirings is formed on a silicon layer of an SOI substrate, and the MEMS sensor containing a structure inside is formed by processing a substrate layer of the SOI substrate. In other words, by using both surfaces of the SOI substrate, the integrated circuit and the MEMS sensor are mounted on one SOI substrate. The integrated circuit and the MEMS sensor are electrically connected to each other by a through-electrode provided in the SOI substrate.

Abstract: An inertial sensor capable of making pressure of a space in which an inertial sensor such as an acceleration sensor is placed to be higher than that during a sealing step and improving reliability is provided. The inertial sensor can be achieved by means of making an inertial sensor including a substrate, a movable portion on the substrate, a cap member which seals the movable portion so as to cover the movable portion, wherein a gas-generating material is applied to the movable portion side of the cap.

Abstract: A highly reliable semiconductor physical quantity sensor whose performance does not change much over time is provided. In the semiconductor physical quantity sensor, movable electrodes which can be displaced by applying a physical quantity are initially displaced using an electrostatic force, and the movable electrodes are used to detect the direction and magnitude of a physical quantity applied to the semiconductor physical quantity sensor. The semiconductor physical quantity sensor is highly reliable and its performance does not change much over time compared with semiconductor physical quantity sensors using a known method in which movable electrodes are initially displaced using a compressive stress film.

Abstract: It is an objective to achieve a MEMS switch which can be mounted with a CMOS circuit and has a contact point with high reliability, both mechanically and electrically. An insulator having a compatibility with a CMOS process is formed at the contact surface of a cantilever beam constituting a MEMS switch and a fixed contact 2 opposite thereto. When the switch is used the cantilever beam is moved by applying a voltage to the pull-in electrode and the cantilever beam. After the cantilever beam makes contact with the fixed contact, a voltage exceeding the breakdown field strength of the insulator is applied to the insulator, resulting in dielectric breakdown occurring. By modifying the insulator once, the mechanical fatigue concentration point of the switch contact point is protected, and a contact point is achieved as well in which electrical signals are transmitted through the current path formed by the dielectric breakdown.

Abstract: An actuator using a piezoelectric element is stably operated at high speed. The actuator includes driving units provided to face a carrier stage and moving the carrier stage in an X-axis direction, piezoelectric elements provided to the driving units respectively and expanding and contracting in the X-axis direction, a carrier electrode provided on a surface of the carrier stage on a driving-unit side, and driving electrodes provided on surfaces of the driving units on a carrier stage side and electrostatically adsorbing the carrier electrode. Signals not synchronized with each other are applied to the piezoelectric elements.

Abstract: An angular rate sensor and an acceleration sensor are sealed at the same sealing pressure. The sealing pressure at this time is put into a reduced pressure state below the atmospheric pressure in view of improving a detection sensitivity of the angular rate sensor. Even in the reduced pressure atmosphere, to improve the detection sensitivity of the acceleration sensor, a shift suppressing portion (damper) for suppressing shifts of a movable body of the acceleration sensor is provided. This shift suppressing portion includes a plurality of protruding portions integrally formed with the movable body and a plurality of protruding portions integrally formed with a peripheral portion, and the protruding portions are alternately disposed separately at equal intervals.

Abstract: As well as achieving both downsizing and thickness reduction and sensitivity improvement of a semiconductor device that has: a MEMS sensor formed by bulk micromachining technique such as an acceleration sensor and an angular rate sensor; and an LSI circuit, a packaging structure of the semiconductor device having the MEMS sensor and the LSI circuit can be simplified. An integrated circuit having MISFETs and wirings is formed on a silicon layer of an SOI substrate, and the MEMS sensor containing a structure inside is formed by processing a substrate layer of the SOI substrate. In other words, by using both surfaces of the SOI substrate, the integrated circuit and the MEMS sensor are mounted on one SOI substrate. The integrated circuit and the MEMS sensor are electrically connected to each other by a through-electrode provided in the SOI substrate.

Abstract: Techniques capable of suppressing fixation between a movable electrode and a fixed electrode in an inertial sensor and preventing the inertial sensor from malfunctioning are provided. The movable electrode, the fixed electrode provided so as to face the movable electrode, a peripheral conductor facing both the movable electrode and the fixed electrode, and a demodulation circuit and a voltage adjustment circuit which adjust the electric potential of the peripheral conductor so that the electric potential of the peripheral conductor becomes the same as the electric potential of the movable electrode are provided, and a change in the capacitance between the movable electrode and the fixed electrode is detected.

Abstract: In a probe memory device, a technique of realizing consistency of high-density recording and high-speed reading/writing is provided. A recording medium is placed to a probe array chip on which a plurality of probes are arranged in such a way as to maintain a constant spacing thereto by adopting a high-stiffness elastic support structure. The recording medium is equipped with a stage scanner that is driven continuously while drawing a constant trajectory on an X-Y plane almost in parallel to a probe array chip plane. The probes are equipped with respective actuators each being driven in a Z direction almost perpendicular to the X-Y plane. Each of the probes is made to write or read by altering a distance between the probe and the recording medium in parallel processing. The X-Y actuator is controlled so that the probe may continue a predetermined cyclic movement.

Abstract: It is an objective to achieve a MEMS switch which can be mounted with a CMOS circuit and has a contact point with high reliability, both mechanically and electrically. An insulator having a compatibility with a CMOS process is formed at the contact surface of a cantilever beam constituting a MEMS switch and a fixed contact 2 opposite thereto. When the switch is used the cantilever beam is moved by applying a voltage to the pull-in electrode and the cantilever beam. After the cantilever beam makes contact with the fixed contact, a voltage exceeding the breakdown field strength of the insulator is applied to the insulator, resulting in dielectric breakdown occurring. By modifying the insulator once, the mechanical fatigue concentration point of the switch contact point is protected, and a contact point is achieved as well in which electrical signals are transmitted through the current path formed by the dielectric breakdown.