Abstract: A base member made of a metal in which aluminum is included, ceramics in which an aluminum element is included, or a composition member constructed by a metal in which aluminum and ceramics are included, is provided in a container in which a solid fluorine compound such as NaHF2 is filled. Then, the container is heated at a temperature higher than a decomposition temperature of the solid fluorine compound. After that, the base member is subjected to a heat treatment with the decomposed gas of the solid fluorine compound to form a fluoride layer on a surface of the base member. In this manner, it is possible to obtain an anti-corrosion member which shows a high corrosion property with respect to the corrosion gas of halogen series and its plasma, particularly with respect to chlorine gas and its plasma.

Abstract: A method of producing the silicon nitride sintered body includes the steps of forming a compact of molding materials including silicon nitride powder, a Mg component and a sintering aid, and sintering the molding materials at 1,800 to 2,000° C. under a nitrogen atmosphere. The materials at least include an oxide of Mg in a range of 0.3 to 10 wt. %. A constant temperature is kept for at least 0.5 hours in a temperature range of 1,400 to 1,700° C. before the temperature is increased to the sintering temperature. A silicon nitride body having high thermal conductivity and excellent electrical insulation properties at high temperature can thus be provided.

Abstract: A semiconductor device as a nonvolatile memory comprises dot elements which are formed out of the semiconductor or conductor fine particles and function as a floating gate. The dot elements are asymmetrically formed to a control gate and may be formed in a sidewall insulating film formed over the side face of the control gate or a select gate. When inclined or stepped portions having level differences are formed in a semiconductor substrate, the dot elements are formed on a specified portion of the inclined or stepped portions.

Abstract: A beam splitter for a digital camera splits light passed through a photographing lens into beams directed to a CCD and a finder optical system. The beam splitter includes at least one optical element provided with a beam splitting surface that is inclined with respect to an optical axis of the photographing lens, and a multi-layer film including a plurality of layers of dielectric materials is formed on the beam splitting surface. The multi-layer film is configured such that the beam splitting surface exhibits a substantially constant reflectivity at least for visible light that is incident on the beam splitting surface at any incident angle within a predetermined range.

Abstract: The object is to provide a laminated radiation member and a power semiconductor apparatus in which no cracks occur due to thermal stress caused by cooling and thermal cycle and which are low in thermal resistance.

Abstract: A Rat IgG antibody film, formed on a p-type Si substrate, is selectively irradiated with ultraviolet rays, thereby leaving part of the Rat IgG antibody film, except for a region deactivated with the ultraviolet rays. Next, when the p-type Si substrate is immersed in a solution containing Au fine particles that have been combined with a Rat IgG antigen, the Rat IgG antigen is selectively combined with the Rat IgG antibody film. As a result, Au fine particles, combined with the Rat IgG antigen, are fixed on the Rat IgG antibody film. Thereafter, the p-type Si substrate is placed within oxygen plasma for 20 minutes, thereby removing the Rat IgG antibody film, the deactivated Rat IgG antibody film and the Rat IgG antigen. Consequently, dot elements can be formed at desired positions on the p-type Si substrate. If these dot elements are used for the floating gate of a semiconductor memory device, then the device has a structure suitable for miniaturization.

Abstract: A surveying instrument includes an optical distance meter which has a light-transmitting optical system and a light-receiving optical system, the light-receiving optical system including a light-receiving element; a first wavelength selection filter and a second wavelength selection filter for allowing only light within a first wavelength range to pass therethrough, to be thereafter incident on the light-receiving element, wherein the first wavelength selection filter allows light with a wavelength equal to or greater than a first specific wavelength to pass therethrough, and a second wavelength selection filter allows light with a wavelength equal to or shorter than a second specific wavelength, which is longer than the first specific wavelength, to pass therethrough; and an angle adjusting device for adjusting an angle of inclination of the first and second wavelength selection filter with respect to an optical path thereof.

Abstract: A heater comprising a substrate having a heating surface to treat a substance to be heated on the substrate, a heating element embedded in the substrate, and a resistance control part, wherein the substrate comprises a first ceramic material and the resistance control part comprises a second ceramic material which has higher volume resistivity than that of the first ceramics.

Abstract: A heater comprising a substrate having a heating surface to treat a substance to be heated on the substrate, a heating element embedded in the substrate, and a resistance control part, wherein the substrate comprises a first ceramic material and the resistance control part comprises a second ceramic material which has higher volume resistivity than that of the first ceramics.

Abstract: An aluminum nitride-based sintered body is disclosed, which includes aluminum nitride as a main ingredient and magnesium and has a polycrystalline structure composed of aluminum nitride crystals.

Abstract: A heater including a substrate having a heating surface to treat a substance to be heated on the substrate, a heating element embedded in the substrate, and a resistance control part. The substrate includes a first ceramic material and the resistance control part includes a second ceramic material which has higher volume resistivity than that of the first ceramic material.

Abstract: The invention provides a semiconductor device, having a variety of functions such as a bistable memory and a logic circuit, in which a MOS semiconductor element, a resonance tunnel diode, a hot electron transistor and the like are formed on a common substrate. An n-type Si layer and a p-type Si layer surrounded with an isolation oxide film are formed on an SOI substrate. A mask oxide film and a gate oxide film are formed, and the n-type Si layer is subjected to crystal anisotropic etching by using the mask oxide film as a mask, so as to change the n-type Si layer into the shape of a thin Si plate. After first and second tunnel oxide films are formed on side faces of this n-type Si layer, first and second polysilicon electrodes of a resonance tunnel diode and a polysilicon electrode working as a gate electrode of a MOS semiconductor element are formed out of a common polysilicon film. Thus, a Si/SiO2 type quantum device can be manufactured with ease at a low cost.

Abstract: A porous composite ceramic sintered body includes an aluminum nitride phase and an aluminum oxynitride phase.

Abstract: This invention relates to a corrosion-resistant member having a resistance to plasma of a halogen based corrosive gas, which comprises a main body and a corrosion-resistant layer formed on a surface of the main body and containing a fluoride of at least one element selected from the group consisting of rare earth elements and alkaline earth elements.

Abstract: A composite PTC material made of cristobalite as a matrix and a conductive filler, having a room temperature resistivity of 10.sup.-1 .OMEGA.cm or less. The conductive filler is at least one substance selected from the group consisting of single metals, metal silicides, metal carbides and metal borides; has a room temperature resistivity of 10.sup.-3 .OMEGA.cm or less when per se made into a sintered material; has particle diameters of 2-50 .mu.m; and is contained in a proportion of 20-35% by volume of the composite PTC material. The composite PTC material has a relative density of 90% or more after firing.

Abstract: The invention provides a semiconductor device, having a variety of functions such as a bistable memory and a logic circuit, in which a MOS semiconductor element, a resonance tunnel diode, a hot electron transistor and the like are formed on a common substrate. An n-type Si layer and a p-type Si layer surrounded with an isolation oxide film are formed on an SOI substrate. A mask oxide film and a gate oxide film are formed, and the n-type Si layer is subjected to crystal anisotropic etching by using the mask oxide film as a mask, so as to change the n-type Si layer into the shape of a thin Si plate. After first and second tunnel oxide films are formed on side faces of this n-type Si layer, first and second polysilicon electrodes of a resonance tunnel diode and a polysilicon electrode working as a gate electrode of a MOS semiconductor element are formed out of a common polysilicon film. Thus, a Si/SiO.sub.2 type quantum device can be manufactured with ease at a low cost.

Abstract: A semiconductor-supporting device comprising a substrate made of an aluminum nitride-based ceramic material and having a semiconductor-placing surface, wherein an orientation degree of the aluminum nitride-based ceramic material specified by the following formula is not less than 1.1 and not more than 2.0.Orientation degree=[I'(002)/I'(100)]/[I(002)/I(100)]in which in an X-ray diffraction measurement, I'(002) is a diffraction intensity of a (002) face of the aluminum nitride-based ceramic material when X-rays are irradiated from the semiconductor-placing surface, I'(100) is a diffraction intensity of a (100) face of the aluminum nitride-based ceramic material when X-rays are irradiated from the semiconductor-placing surface, I(002) is a diffraction intensity of the (002) face of the aluminum nitride ceramic according to a JCPDS Card No. 25-1133, and I(100) is a diffraction intensity of the (100) face of the aluminum nitride ceramic according to a JCPDS Card No. 25-1133.

Abstract: This invention relates to an aluminum nitride sintered body comprising aluminum nitride crystal grains, in which the grains have a given content of a rare earth element (a conversion content as an oxide thereof), a given average grain size, and a given spin amount per unit mg of aluminum obtained from a spectrum as measured by an electron spin resonance method. The aluminum nitride sintered body is used in an electronic functional material and an electrostatic chuck.

Abstract: This invention provides an aluminum nitride based composite body comprising aluminum nitride crystal grains and .gamma.-alumina type crystals in which the aluminum nitride crystal grains has a specified oxygen content as measured by means of an X-ray microanalyzer and a specified spin amount per unit mg of aluminum obtained from a spectrum measured by an electron spin resonance method as well as a method of producing the same.

Abstract: A silicon island portion is formed in a quantum wire so as to be sandwiched between a pair of tunnel barrier portions of a silicon oxide film. On one side of the silicon island portion, a gate electrode for potential control is disposed with a gate insulating film of a silicon oxide film interposed therebetween. On the other side of the silicon island portion, a control electrode for potential control is disposed with an insulating film of a silicon oxide film interposed therebetween. Each of the tunnel barrier portions has a quantum wire constriction structure, which is formed by oxidizing a quantum wire, i.e., a silicon oxide film formed as a field enhanced oxide film with an atomic force microscope or the like, from its surface to a substantially center portion in its section.