Abstract: Disclosed is a near-infrared absorbing composition, including: a near-infrared absorbing agent; and a solvent, wherein the near-infrared absorbing agent includes at least one of the following Component (A) and Component (B): Component (A): a component composed of a compound having a structure of the following general formula (I) and a metal ion; Component (B): a component composed of a metal complex that is obtainable by a reaction of the compound having the structure of the following general formula (I) and a metal compound.

Abstract: A liquid jetting nozzle-includes a tip body and a tip supported at the tip body. The tip body includes an introduction port which a liquid is introduced. A first and a second ejection port are formed in the tip and each jet out the liquid introduced through the introduction port. A first and a second conduit are formed in the tip. The first conduit structures a downstream side region of a first channel through which the liquid flows from the introduction port toward the side at which the first ejection port is formed. The second conduit structures a downstream side region of a second channel through which the liquid flows from the introduction port toward the side at which the second ejection port is formed. An angle formed between the first and second conduit is specified that the liquid jetting out from the first and second ejection port collide.

Abstract: Provided is a method of producing an electronic part holding jig, including applying laser light to an elastomer sheet to form a holding hole for holding an electronic part in the elastomer sheet, wherein the applying of the laser light is performed by passing the laser light emitted from a laser oscillator through a mask pattern having a transmission hole corresponding to a shape of the holding hole to be formed, and condensing the light with a lens, followed by the applying of the light to the elastomer sheet.

Abstract: A positive electrode for alkaline storage batteries that enables to improve the active material utilization rate, while suppressing the self-discharge. The positive electrode for alkaline storage batteries includes a support having conductivity, and a positive electrode active material adhering to the support. The positive electrode active material includes particles of a nickel oxide. The particles of the nickel oxide include a first particle group having a particle diameter of 20 ?m or more, and a second particle group having a particle diameter of less than 20 ?m. The first particle group includes a first component with cracks, and a second component without cracks. The proportion of the first particle group in the particles of the nickel oxide is 15 vol % or more, and the proportion by number of the first component in the first particle group is 15% or more.

Abstract: Provided is a positive electrode for an alkaline storage battery, capable of achieving a high charge efficiency over a wide range of temperature including high temperatures. The positive electrode includes a positive electrode material mixture including: a nickel oxide as a positive electrode active material; a first additive; and a second additive differing from the first additive. An amount of sulfate ions SO42? remaining in the nickel oxide is 0.45 mass % or less. The first additive is a compound including at least one selected from the group consisting of ytterbium, indium, calcium, barium, beryllium, antimony, erbium, thulium, and lutetium. The second additive is a compound including at least one selected from the group consisting of titanium, vanadium, scandium, niobium, zirconium, and zinc.

Abstract: Disclosed is an alloy powder for electrodes for nickel-metal hydride storage batteries having a high battery capacity and being excellent in life characteristics and high-temperature storage characteristics. The alloy powder includes a hydrogen storage alloy containing elements L, M, Ni, Co, and E. L includes La as an essential component. L includes no Nd, or when including Nd, the percentage of Nd in L is less than 5 mass %. The percentage of La in the hydrogen storage alloy is 23 mass % or less. M is Mg, Ca, Sr and/or Ba. A molar ratio ? to a total of L and M is 0.045???0.133. A molar ratio x of Ni to the total of L and M is 3.5?x?4.32, and a molar ratio y of Co is 0.13?y?0.5. The molar ratios x and y, and a molar ratio z of E to the total of L and M satisfy 4.78?x+y+z<5.03.

Abstract: Provided is an alloy powder for an electrode which enables an alkaline storage battery to have both excellent discharge characteristics and excellent life characteristics. The alloy powder includes a hydrogen storage alloy including an element L, Mg, Ni, Al, and an element Ma. The element L is at least one selected from the group consisting of group 3 elements and group 4 elements of the periodic table (excluding Y). The element Ma is at least two selected from the group consisting of Ge, Y, and Sn. A molar proportion x of Mg in a total of the element L and Mg is 0.008?x?0.54. A molar proportion y of Ni, a molar proportion ? of Al, and a molar proportion ? of the element Ma, per the foregoing total is 1.6?y?4, 0.008???0.32, and 0.01???0.12, respectively.

Abstract: A semiconductor device including a well resistance element of high accuracy and high withstand voltage and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor substrate, a well region, an input terminal, an output terminal, a separation insulating film, and an active region. The input terminal and the output terminal are electrically coupled to the well region. The separation insulating film is arranged to be in contact with the upper surface of the well region in an intermediate region between the input terminal and the output terminal. The active region is arranged to be in contact with the upper surface of the well region. The separation insulating film and the active region in the intermediate region have an elongated shape in plan view. In the intermediate region, a plurality of separation insulating films and a plurality of active regions are alternately and repeatedly arranged.

Abstract: A semiconductor device including a well resistance element of high accuracy and high withstand voltage and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor substrate, a well region, an input terminal, an output terminal, a separation insulating film, and an active region. The input terminal and the output terminal are electrically coupled to the well region. The separation insulating film is arranged to be in contact with the upper surface of the well region in an intermediate region between the input terminal and the output terminal. The active region is arranged to be in contact with the upper surface of the well region. The separation insulating film and the active region in the intermediate region have an elongated shape in plan view. In the intermediate region, a plurality of separation insulating films and a plurality of active regions are alternately and repeatedly arranged.

Abstract: An alkaline storage battery includes: a cylindrical case having a side wall including an opening end portion and a bottom; a sealing plate; a gasket interposed between the sealing plate and the opening end portion; and a sealant between the gasket and the opening end portion. The side wall has an annular groove opened at an outer surface thereof, and an inwardly curl portion at the opening end portion. In at least part of the groove, the minimum width L1 is within 0.2 mm. The sealant includes a polyamide resin formed such that when two test-plate materials are bonded together at bonding faces facing each other via a bonding portion of the sealant, and moved in parallel with the bonding faces and in opposite directions to have a relative displacement within 0.5 to 5 mm, a stress at least 0.02 N/mm2 is applied to the bonding portion.

Abstract: An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a fin-shaped semiconductor portion and a gate electrode with high precision or by making improvement regarding variations in characteristics among elements. The present invention is a semiconductor device including a fin-shaped semiconductor portion having a source region formed on one side thereof and a drain region formed on the other side thereof, and a gate electrode formed between the source region and the drain region to surround the fin-shaped semiconductor portion with a gate insulating film interposed therebetween. One solution for solving the problem according to the invention is that the gate electrode uses a metal material or a silicide material that is wet etchable.

Abstract: A positive electrode for alkaline storage batteries that enables to improve the active material utilization rate, while suppressing the self-discharge. The positive electrode for alkaline storage batteries includes a support having conductivity, and a positive electrode active material adhering to the support. The positive electrode active material includes particles of a nickel oxide. The particles of the nickel oxide include a first particle group having a particle diameter of 20 ?m or more, and a second particle group having a particle diameter of less than 20 ?m. The first particle group includes a first component with cracks, and a second component without cracks. The proportion of the first particle group in the particles of the nickel oxide is 15 vol % or more, and the proportion by number of the first component in the first particle group is 15% or more.

Abstract: An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a fin-shaped semiconductor portion and a gate electrode with high precision or by making improvement regarding variations in characteristics among elements. The present invention is a semiconductor device including a fin-shaped semiconductor portion having a source region formed on one side thereof and a drain region formed on the other side thereof, and a gate electrode formed between the source region and the drain region to surround the fin-shaped semiconductor portion with a gate insulating film interposed therebetween. One solution for solving the problem according to the invention is that the gate electrode uses a metal material or a silicide material that is wet etchable.

Abstract: An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a fin-shaped semiconductor portion and a gate electrode with high precision or by making improvement regarding variations in characteristics among elements. The present invention is a semiconductor device including a fin-shaped semiconductor portion having a source region formed on one side thereof and a drain region formed on the other side thereof, and a gate electrode formed between the source region and the drain region to surround the fin-shaped semiconductor portion with a gate insulating film interposed therebetween. One solution for solving the problem according to the invention is that the gate electrode uses a metal material or a silicide material that is wet etchable.

Abstract: A semiconductor device including a well resistance element of high accuracy and high withstand voltage and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor substrate, a well region, an input terminal, an output terminal, a separation insulating film, and an active region. The input terminal and the output terminal are electrically coupled to the well region. The separation insulating film is arranged to be in contact with the upper surface of the well region in an intermediate region between the input terminal and the output terminal. The active region is arranged to be in contact with the upper surface of the well region. The separation insulating film and the active region in the intermediate region have an elongated shape in plan view. In the intermediate region, a plurality of separation insulating films and a plurality of active regions are alternately and repeatedly arranged.

Abstract: Provided is a positive electrode active material for alkaline storage batteries that enables to achieve a high charging efficiency in a wide temperature range including high temperatures, and suppress self-discharge. The positive electrode active material for alkaline storage batteries includes a nickel oxide. In a powder X-ray 2?/? diffraction pattern using CuK? radiation of the nickel oxide, the ratio I001/I101 of a peak intensity I001 of (001) plane to a peak intensity I101 of (101) plane is 2 or more, and the ratio FWHM001/FWHM101 of a full width at half maximum FWHM001 of (001) plane to a full width at half maximum FWHM101 of (101) plane is 0.6 or less.

Abstract: Disclosed is an alloy powder for electrodes for nickel-metal hydride storage batteries having a high battery capacity and being excellent in life characteristics and high-temperature storage characteristics. The alloy powder includes a hydrogen storage alloy containing elements L, M, Ni, Co, and E. L includes La as an essential component. L includes no Nd, or when including Nd, the percentage of Nd in L is less than 5 mass %. The percentage of La in the hydrogen storage alloy is 23 mass % or less. M is Mg, Ca, Sr and/or Ba. A molar ratio ? to a total of L and M is 0.045???0.133. A molar ratio x of Ni to the total of L and M is 3.5?x?4.32, and a molar ratio y of Co is 0.13?y?0.5. The molar ratios x and y, and a molar ratio z of E to the total of L and M satisfy 4.78?x+y+z<5.03.

Abstract: An alkaline storage battery includes: a cylindrical case having a side wall including an opening end portion and a bottom; a sealing plate; a gasket interposed between the sealing plate and the opening end portion; and a sealant between the gasket and the opening end portion. The side wall has an annular groove opened at an outer surface thereof, and an inwardly curl portion at the opening end portion. In at least part of the groove, the minimum width L1 is within 0.2 mm. The sealant includes a polyamide resin formed such that when two test-plate materials are bonded together at bonding faces facing each other via a bonding portion of the sealant, and moved in parallel with the bonding faces and in opposite directions to have a relative displacement within 0.5 to 5 mm, a stress at least 0.02 N/mm2 is applied to the bonding portion.

Abstract: Provided is an alloy powder for an electrode which enables an alkaline storage battery to have both excellent discharge characteristics and excellent life characteristics. The alloy powder includes a hydrogen storage alloy including an element L, Mg, Ni, Al, and an element Ma. The element L is at least one selected from the group consisting of group 3 elements and group 4 elements of the periodic table (excluding Y). The element Ma is at least two selected from the group consisting of Ge, Y, and Sn. A molar proportion x of Mg in a total of the element L and Mg is 0.008?x?0.54. A molar proportion y of Ni, a molar proportion ? of Al, and a molar proportion ? of the element Ma, per the foregoing total is 1.6?y?4, 0.008???0.32, and 0.01???0.12, respectively.

Abstract: Provided is a positive electrode for an alkaline storage battery, capable of achieving a high charge efficiency over a wide range of temperature including high temperatures. The positive electrode includes a positive electrode material mixture including: a nickel oxide as a positive electrode active material; a first additive; and a second additive differing from the first additive. An amount of sulfate ions SO42? remaining in the nickel oxide is 0.45 mass % or less. The first additive is a compound including at least one selected from the group consisting of ytterbium, indium, calcium, barium, beryllium, antimony, erbium, thulium, and lutetium. The second additive is a compound including at least one selected from the group consisting of titanium, vanadium, scandium, niobium, zirconium, and zinc.