Patents by Inventor Kiyoshi Hayashi

Kiyoshi Hayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10128492
    Abstract: A positive electrode for alkaline storage batteries that enables to improve the active material utilization rate, while suppressing the self-discharge. The positive electrode for alkaline storage batteries includes a support having conductivity, and a positive electrode active material adhering to the support. The positive electrode active material includes particles of a nickel oxide. The particles of the nickel oxide include a first particle group having a particle diameter of 20 ?m or more, and a second particle group having a particle diameter of less than 20 ?m. The first particle group includes a first component with cracks, and a second component without cracks. The proportion of the first particle group in the particles of the nickel oxide is 15 vol % or more, and the proportion by number of the first component in the first particle group is 15% or more.
    Type: Grant
    Filed: December 4, 2014
    Date of Patent: November 13, 2018
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Kiyoshi Hayashi, Yasushi Nakamura, Fumio Kato
  • Patent number: 10079385
    Abstract: Provided is a positive electrode for an alkaline storage battery, capable of achieving a high charge efficiency over a wide range of temperature including high temperatures. The positive electrode includes a positive electrode material mixture including: a nickel oxide as a positive electrode active material; a first additive; and a second additive differing from the first additive. An amount of sulfate ions SO42? remaining in the nickel oxide is 0.45 mass % or less. The first additive is a compound including at least one selected from the group consisting of ytterbium, indium, calcium, barium, beryllium, antimony, erbium, thulium, and lutetium. The second additive is a compound including at least one selected from the group consisting of titanium, vanadium, scandium, niobium, zirconium, and zinc.
    Type: Grant
    Filed: March 4, 2013
    Date of Patent: September 18, 2018
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventor: Kiyoshi Hayashi
  • Patent number: 9997776
    Abstract: Disclosed is an alloy powder for electrodes for nickel-metal hydride storage batteries having a high battery capacity and being excellent in life characteristics and high-temperature storage characteristics. The alloy powder includes a hydrogen storage alloy containing elements L, M, Ni, Co, and E. L includes La as an essential component. L includes no Nd, or when including Nd, the percentage of Nd in L is less than 5 mass %. The percentage of La in the hydrogen storage alloy is 23 mass % or less. M is Mg, Ca, Sr and/or Ba. A molar ratio ? to a total of L and M is 0.045???0.133. A molar ratio x of Ni to the total of L and M is 3.5?x?4.32, and a molar ratio y of Co is 0.13?y?0.5. The molar ratios x and y, and a molar ratio z of E to the total of L and M satisfy 4.78?x+y+z<5.03.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: June 12, 2018
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Akiko Okabe, Hideaki Ohyama, Shinichi Sumiyama, Yasushi Nakamura, Kiyoshi Hayashi, Hiroki Takeshima, Fumio Kato
  • Patent number: 9893347
    Abstract: Provided is an alloy powder for an electrode which enables an alkaline storage battery to have both excellent discharge characteristics and excellent life characteristics. The alloy powder includes a hydrogen storage alloy including an element L, Mg, Ni, Al, and an element Ma. The element L is at least one selected from the group consisting of group 3 elements and group 4 elements of the periodic table (excluding Y). The element Ma is at least two selected from the group consisting of Ge, Y, and Sn. A molar proportion x of Mg in a total of the element L and Mg is 0.008?x?0.54. A molar proportion y of Ni, a molar proportion ? of Al, and a molar proportion ? of the element Ma, per the foregoing total is 1.6?y?4, 0.008???0.32, and 0.01???0.12, respectively.
    Type: Grant
    Filed: December 5, 2013
    Date of Patent: February 13, 2018
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Hideaki Ohyama, Shinichi Sumiyama, Akiko Okabe, Yasushi Nakamura, Kiyoshi Hayashi, Fumio Kato
  • Publication number: 20170373146
    Abstract: A semiconductor device including a well resistance element of high accuracy and high withstand voltage and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor substrate, a well region, an input terminal, an output terminal, a separation insulating film, and an active region. The input terminal and the output terminal are electrically coupled to the well region. The separation insulating film is arranged to be in contact with the upper surface of the well region in an intermediate region between the input terminal and the output terminal. The active region is arranged to be in contact with the upper surface of the well region. The separation insulating film and the active region in the intermediate region have an elongated shape in plan view. In the intermediate region, a plurality of separation insulating films and a plurality of active regions are alternately and repeatedly arranged.
    Type: Application
    Filed: September 7, 2017
    Publication date: December 28, 2017
    Inventor: Kiyoshi HAYASHI
  • Patent number: 9786738
    Abstract: A semiconductor device including a well resistance element of high accuracy and high withstand voltage and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor substrate, a well region, an input terminal, an output terminal, a separation insulating film, and an active region. The input terminal and the output terminal are electrically coupled to the well region. The separation insulating film is arranged to be in contact with the upper surface of the well region in an intermediate region between the input terminal and the output terminal. The active region is arranged to be in contact with the upper surface of the well region. The separation insulating film and the active region in the intermediate region have an elongated shape in plan view. In the intermediate region, a plurality of separation insulating films and a plurality of active regions are alternately and repeatedly arranged.
    Type: Grant
    Filed: July 23, 2015
    Date of Patent: October 10, 2017
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventor: Kiyoshi Hayashi
  • Patent number: 9627657
    Abstract: An alkaline storage battery includes: a cylindrical case having a side wall including an opening end portion and a bottom; a sealing plate; a gasket interposed between the sealing plate and the opening end portion; and a sealant between the gasket and the opening end portion. The side wall has an annular groove opened at an outer surface thereof, and an inwardly curl portion at the opening end portion. In at least part of the groove, the minimum width L1 is within 0.2 mm. The sealant includes a polyamide resin formed such that when two test-plate materials are bonded together at bonding faces facing each other via a bonding portion of the sealant, and moved in parallel with the bonding faces and in opposite directions to have a relative displacement within 0.5 to 5 mm, a stress at least 0.02 N/mm2 is applied to the bonding portion.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: April 18, 2017
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Shinichi Sumiyama, Fumio Kato, Hideaki Ohyama, Kiyoshi Hayashi
  • Patent number: 9515170
    Abstract: An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a fin-shaped semiconductor portion and a gate electrode with high precision or by making improvement regarding variations in characteristics among elements. The present invention is a semiconductor device including a fin-shaped semiconductor portion having a source region formed on one side thereof and a drain region formed on the other side thereof, and a gate electrode formed between the source region and the drain region to surround the fin-shaped semiconductor portion with a gate insulating film interposed therebetween. One solution for solving the problem according to the invention is that the gate electrode uses a metal material or a silicide material that is wet etchable.
    Type: Grant
    Filed: February 5, 2016
    Date of Patent: December 6, 2016
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Toshiaki Iwamatsu, Takashi Terada, Hirofumi Shinohara, Kozo Ishikawa, Ryuta Tsuchiya, Kiyoshi Hayashi
  • Publication number: 20160254534
    Abstract: A positive electrode for alkaline storage batteries that enables to improve the active material utilization rate, while suppressing the self-discharge. The positive electrode for alkaline storage batteries includes a support having conductivity, and a positive electrode active material adhering to the support. The positive electrode active material includes particles of a nickel oxide. The particles of the nickel oxide include a first particle group having a particle diameter of 20 ?m or more, and a second particle group having a particle diameter of less than 20 ?m. The first particle group includes a first component with cracks, and a second component without cracks. The proportion of the first particle group in the particles of the nickel oxide is 15 vol % or more, and the proportion by number of the first component in the first particle group is 15% or more.
    Type: Application
    Filed: December 4, 2014
    Publication date: September 1, 2016
    Inventors: Kiyoshi HAYASHI, Yasushi NAKAMURA, Fumio KATO
  • Publication number: 20160155825
    Abstract: An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a fin-shaped semiconductor portion and a gate electrode with high precision or by making improvement regarding variations in characteristics among elements. The present invention is a semiconductor device including a fin-shaped semiconductor portion having a source region formed on one side thereof and a drain region formed on the other side thereof, and a gate electrode formed between the source region and the drain region to surround the fin-shaped semiconductor portion with a gate insulating film interposed therebetween. One solution for solving the problem according to the invention is that the gate electrode uses a metal material or a silicide material that is wet etchable.
    Type: Application
    Filed: February 5, 2016
    Publication date: June 2, 2016
    Inventors: Toshiaki IWAMATSU, Takashi TERADA, Hirofumi SHINOHARA, Kozo ISHIKAWA, Ryuta TSUCHIYA, Kiyoshi HAYASHI
  • Patent number: 9287400
    Abstract: An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a fin-shaped semiconductor portion and a gate electrode with high precision or by making improvement regarding variations in characteristics among elements. The present invention is a semiconductor device including a fin-shaped semiconductor portion having a source region formed on one side thereof and a drain region formed on the other side thereof, and a gate electrode formed between the source region and the drain region to surround the fin-shaped semiconductor portion with a gate insulating film interposed therebetween. One solution for solving the problem according to the invention is that the gate electrode uses a metal material or a silicide material that is wet etchable.
    Type: Grant
    Filed: August 16, 2012
    Date of Patent: March 15, 2016
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Toshiaki Iwamatsu, Takashi Terada, Hirofumi Shinohara, Kozo Ishikawa, Ryuta Tsuchiya, Kiyoshi Hayashi
  • Publication number: 20160049470
    Abstract: A semiconductor device including a well resistance element of high accuracy and high withstand voltage and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor substrate, a well region, an input terminal, an output terminal, a separation insulating film, and an active region. The input terminal and the output terminal are electrically coupled to the well region. The separation insulating film is arranged to be in contact with the upper surface of the well region in an intermediate region between the input terminal and the output terminal. The active region is arranged to be in contact with the upper surface of the well region. The separation insulating film and the active region in the intermediate region have an elongated shape in plan view. In the intermediate region, a plurality of separation insulating films and a plurality of active regions are alternately and repeatedly arranged.
    Type: Application
    Filed: July 23, 2015
    Publication date: February 18, 2016
    Inventor: Kiyoshi HAYASHI
  • Publication number: 20150221989
    Abstract: Provided is a positive electrode active material for alkaline storage batteries that enables to achieve a high charging efficiency in a wide temperature range including high temperatures, and suppress self-discharge. The positive electrode active material for alkaline storage batteries includes a nickel oxide. In a powder X-ray 2?/? diffraction pattern using CuK? radiation of the nickel oxide, the ratio I001/I101 of a peak intensity I001 of (001) plane to a peak intensity I101 of (101) plane is 2 or more, and the ratio FWHM001/FWHM101 of a full width at half maximum FWHM001 of (001) plane to a full width at half maximum FWHM101 of (101) plane is 0.6 or less.
    Type: Application
    Filed: August 29, 2013
    Publication date: August 6, 2015
    Inventors: Kiyoshi Hayashi, Yasushi Nakamura, Yasuhiro Nitta
  • Publication number: 20150104703
    Abstract: Disclosed is an alloy powder for electrodes for nickel-metal hydride storage batteries having a high battery capacity and being excellent in life characteristics and high-temperature storage characteristics. The alloy powder includes a hydrogen storage alloy containing elements L, M, Ni, Co, and E. L includes La as an essential component. L includes no Nd, or when including Nd, the percentage of Nd in L is less than 5 mass %. The percentage of La in the hydrogen storage alloy is 23 mass % or less. M is Mg, Ca, Sr and/or Ba. A molar ratio ? to a total of L and M is 0.045???0.133. A molar ratio x of Ni to the total of L and M is 3.5?x?4.32, and a molar ratio y of Co is 0.13?y?0.5. The molar ratios x and y, and a molar ratio z of E to the total of L and M satisfy 4.78?x+y+z<5.03.
    Type: Application
    Filed: February 19, 2014
    Publication date: April 16, 2015
    Inventors: Akiko Okabe, Hideaki Ohyama, Shinichi Sumiyama, Yasushi Nakamura, Kiyoshi Hayashi, Hiroki Takeshima, Fumio Kato
  • Publication number: 20150024258
    Abstract: An alkaline storage battery includes: a cylindrical case having a side wall including an opening end portion and a bottom; a sealing plate; a gasket interposed between the sealing plate and the opening end portion; and a sealant between the gasket and the opening end portion. The side wall has an annular groove opened at an outer surface thereof, and an inwardly curl portion at the opening end portion. In at least part of the groove, the minimum width L1 is within 0.2 mm. The sealant includes a polyamide resin formed such that when two test-plate materials are bonded together at bonding faces facing each other via a bonding portion of the sealant, and moved in parallel with the bonding faces and in opposite directions to have a relative displacement within 0.5 to 5 mm, a stress at least 0.02 N/mm2 is applied to the bonding portion.
    Type: Application
    Filed: February 22, 2013
    Publication date: January 22, 2015
    Applicant: PANASONIC CORPORATION
    Inventors: Shinichi Sumiyama, Fumio Kato, Hideaki Ohyama, Kiyoshi Hayashi
  • Publication number: 20150010812
    Abstract: Provided is an alloy powder for an electrode which enables an alkaline storage battery to have both excellent discharge characteristics and excellent life characteristics. The alloy powder includes a hydrogen storage alloy including an element L, Mg, Ni, Al, and an element Ma. The element L is at least one selected from the group consisting of group 3 elements and group 4 elements of the periodic table (excluding Y). The element Ma is at least two selected from the group consisting of Ge, Y, and Sn. A molar proportion x of Mg in a total of the element L and Mg is 0.008?x?0.54. A molar proportion y of Ni, a molar proportion ? of Al, and a molar proportion ? of the element Ma, per the foregoing total is 1.6?y?4, 0.008???0.32, and 0.01???0.12, respectively.
    Type: Application
    Filed: December 5, 2013
    Publication date: January 8, 2015
    Applicant: PANASONIC CORPORATION
    Inventors: Hideaki Ohyama, Shinichi Sumiyama, Akiko Okabe, Yasushi Nakamura, Kiyoshi Hayashi, Fumio Kato
  • Publication number: 20140356702
    Abstract: Provided is a positive electrode for an alkaline storage battery, capable of achieving a high charge efficiency over a wide range of temperature including high temperatures. The positive electrode includes a positive electrode material mixture including: a nickel oxide as a positive electrode active material; a first additive; and a second additive differing from the first additive. An amount of sulfate ions SO42? remaining in the nickel oxide is 0.45 mass % or less. The first additive is a compound including at least one selected from the group consisting of ytterbium, indium, calcium, barium, beryllium, antimony, erbium, thulium, and lutetium. The second additive is a compound including at least one selected from the group consisting of titanium, vanadium, scandium, niobium, zirconium, and zinc.
    Type: Application
    Filed: March 4, 2013
    Publication date: December 4, 2014
    Inventor: Kiyoshi Hayashi
  • Patent number: 8888157
    Abstract: A floor panel, a rear end member which is provided at a rear portion of the floor panel and extends in a vehicle width direction, and a rear end trim which covers a surface on a baggage-compartment side of the rear end member are provided. A step portion is formed at a connection portion connecting an upper portion of the rear end member and a lower portion of the rear end member which is positioned in front of and below the upper portion. An opening is formed at the step portion. An attachment portion, by which the rear end trim is attachable to the rear end member, is provided at the rear end trim. This attachment portion is configured to be inserted from above into the opening for engagement.
    Type: Grant
    Filed: July 29, 2013
    Date of Patent: November 18, 2014
    Assignee: Mazda Motor Corporation
    Inventors: Takashi Narahara, Kiyoshi Hayashi, Hayato Miyazaki
  • Patent number: 8759007
    Abstract: The present invention provides a method for detecting modified LDL, abnormal cells or bacteria using an intermolecular interaction analysis method, in which a region involved in ligand recognition by a receptor is expressed, without modification or as a biotinylated protein, in cells or in a test tube, and thereafter, the expressed region or the expressed biotinylated protein is immobilized via avidin or streptavidin to a solid phase while the orientation thereof is maintained, and the immobilized protein is utilized; and a kit for detecting the modified LDL or the like.
    Type: Grant
    Filed: December 11, 2009
    Date of Patent: June 24, 2014
    Assignee: National Food Research Institute
    Inventors: Sachiko Machida, Kiyoshi Hayashi, Ken Tokuyasu, Yoshikiyo Sakakibara, Shigeru Matsunaga
  • Patent number: 8754471
    Abstract: There are provided a semiconductor device which can be miniaturized without being deteriorated in characteristics, and a manufacturing method thereof. The semiconductor device includes a semiconductor substrate having a main surface, a source region and a drain region formed apart from each other in the main surface, a gate electrode layer formed over the main surface sandwiched between the source region and the drain region, a first conductive layer formed so as to be in contact with the surface of the source region, and a second conductive layer formed so as to be in contact with the surface of the drain region. A recess is formed in the main surface so as to extend from the contact region between the first conductive layer and the source region through a part underlying the gate electrode layer to the contact region between the second conductive layer and the drain region.
    Type: Grant
    Filed: March 4, 2011
    Date of Patent: June 17, 2014
    Assignee: Renesas Electronics Corporation
    Inventors: Toshiaki Iwamatsu, Kozo Ishikawa, Masashi Kitazawa, Kiyoshi Hayashi, Takahiro Maruyama, Masaaki Shinohara, Kenji Kawai