Abstract: A motor controlling device includes an encoder to output pulse signals with a predetermined angle interval as a rotor of a motor is rotated. An energized phase of the motor is sequentially switched by detecting a rotation position of the rotor based on a value of counting the signals. An initial drive controlling portion executes an initial drive to switch the energized phase with a predetermined pattern after the device is activated so as to learn a relationship among the count value, the rotation position and the energized phase. An initial drive prohibiting portion prohibits the execution of the initial drive until a predetermined time is elapsed after the initial drive is finished.

Abstract: A power semiconductor device includes a high resistance epitaxial layer having a first pillar region and a second pillar region as a drift layer. The first pillar region includes a plurality of first pillars of the first conductivity type and a plurality of second pillars of the second conductivity type disposed alternately along a first direction. The second pillar region is adjacent to the first pillar region along the first direction. The second pillar region includes a third pillar and a fourth pillar of a conductivity type opposite to a conductivity type of the third pillar. A net quantity of impurities in the third pillar is less than a net quantity of impurities in each of the plurality of first pillars. A net quantity of impurities in the fourth pillar is less than the net quantity of impurities in the third pillar.

Abstract: A shift-by-wire (SBW) device includes a capacitor, which stores electric power. When an abnormality occurs in a battery or an electric power supply system, an actuator of the SBW device receives electric power from the capacitor and changes a shift range of an automatic transmission to a P range at least once. Furthermore, when a lever of a P range releasing arrangement is operated, the P range of the automatic transmission is released.

Abstract: A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer provided thereon, mutually separated columnar third semiconductor layers of a second conductivity type extending within the second semiconductor layer, island-like fourth semiconductor layers of the second conductivity type provided on the third semiconductor layers, fifth semiconductor layers of the first conductivity type, sixth semiconductor layers of the second conductivity type, a gate electrode, a first electrode, and a second electrode. The fifth semiconductor layers are selectively provided on the fourth semiconductor layers. The sixth semiconductor layer electrically connects two adjacent fourth semiconductor layers. The first electrode is in electrical connection with the first semiconductor. The second electrode is in electrical connection with the fourth semiconductor layers and the fifth semiconductor layers via the openings in the gate electrode.

Abstract: A method of reducing the contamination amount of mycotoxin in cereals wherein one or more compounds A selected from the group consisting of ammonium salts, primary to quaternary ammonium salts, alkali metal salts, alkaline earth metal salts and polyvalent metal salts of phosphorous acid and phosphite ester are given to the cereals.

Abstract: We search for a cultivation method for reducing the amount of mycotoxin contamination in wheat which has been an important pending question for the quality in actual producing field of wheat and the health hazard risk for customers. The present invention discloses a method of reducing the contamination amount of mycotoxin in cereals characterized in that one or more compounds A selected from the group consisting of ammonium salts, primary to quaternary ammonium salts, alkali metal salts, alkaline earth metal salts and polyvalent metal salts of phosphorous acid and phosphite ester are given to the cereals.

Abstract: When a vehicle electric power source is turned on, and when a target mode position is other than a P-mode position and a D-mode position or the target mode position is unfixed, an SBW-ECU does not drive the actuator so that the current actual mode position is maintained. The SBW-ECU accepts only the driver's requirement for changing the mode position to the P-mode position or the D-mode position. When it is required to change the mode position to the P-mode position, a first position learning portion learns a first reference position. When it is required to change the mode position to the D-mode position, a second position learning portion learns a second reference position.

Abstract: An amount of a rotational angle corresponding to a half of a play (included in an insert-fit coupling device having a maximum production tolerance) is set as a correction amount. When a shift range is changed to a target range, a target rotational angle for an output shaft corresponding to such target range is calculated. The target rotational angle is corrected to get a virtual rotational angle for the output shaft, so that the output shaft may be further rotated by the correction amount in addition to the target rotational angle. A control error for a stop position of a roller is controlled within a half of the play. According to the invention, it is not necessary to carry out a learning process for the play.

Abstract: In general, according to one embodiment, a power semiconductor device includes a first pillar region, a second pillar region, and an epitaxial layer of a first conductivity type on a first semiconductor layer. The first pillar region is composed of a plurality of first pillar layers of a second conductivity type and a plurality of second pillar layers of the first conductivity type alternately arranged along a first direction. The second pillar region is adjacent to the first pillar region along the first direction and includes a third pillar layer of the second conductivity type, a fourth pillar layer of the first conductivity type, and a fifth pillar layer of the second conductivity type in this order along the first direction. A plurality of second base layers of the second conductivity type electrically connected, respectively, onto the third pillar layer and the fifth pillar layer and spaced from each other.

Abstract: A power semiconductor device includes a first semiconductor layer of a first conductivity type, a first drift layer, and a second drift layer. The first drift layer includes a first epitaxial layer of the first conductivity type, a plurality of first first-conductivity-type pillar layers, and a plurality of first second-conductivity-type pillar layers. The second drift layer is formed on the first drift layer and includes a second epitaxial layer of the first conductivity type, a plurality of second second-conductivity-type pillar layers, a plurality of second first-conductivity-type pillar layers, a plurality of third second-conductivity-type pillar layers, and a plurality of third first-conductivity-type pillar layers. The plurality of second second-conductivity-type pillar layers are connected to the first second-conductivity-type pillar layers. The plurality of second first-conductivity-type pillar layers are connected to the first first-conductivity-type pillar layers.

Abstract: An anisotropically conductive connector and an anisotropically conductive connector device. The anisotropically conductive connector includes a supporting member, a plurality of through-holes each extending in a thickness-wise direction of the supporting member, and anisotropically conductive sheets respectively held in the through-holes of the supporting member. Each anisotropically conductive sheet includes a frame plate, a plurality of through-holes each extending in a thickness-wise direction of the frame plate, and a plurality of anisotropically conductive elements arranged in the respective through-holes of the frame plate. Each of the anisotropically conductive elements includes a conductive part, conductive particles contained in an elastic polymeric substance in a state oriented so as to align in a thickness-wise direction of the element, and an insulating part to cover the outer periphery of the conductive part and including an elastic polymeric substance.

Abstract: A reference position detecting apparatus includes an electric motor and a motor control unit. The electric motor includes a plurality of first coils and a plurality of second coils. The electric motor further includes a rotor that rotates when at least one of the plurality of first coils and the plurality of second coils is supplied with electricity. The motor control unit controls electricity supplied to either one of the plurality of first coils and the plurality of second coils to rotate the rotor to a limit position in a movable range of an object.

Abstract: According to one embodiment, a semiconductor device including a cell region and a terminal region includes a first semiconductor region of a first conductivity type, semiconductor pillars of the first and a second conductivity type, a second semiconductor region of the second conductivity type, and a third semiconductor region of the first conductivity type. The semiconductor pillars of the first and second conductivity type are and arranged alternately on the first semiconductor region. The second semiconductor region is provided on the semiconductor pillar of the second conductivity type. The third semiconductor region is provided on the second semiconductor region. A semiconductor pillar other than a semiconductor pillar most proximal to the terminal region is provided in a stripe configuration. The semiconductor pillar most proximal to the terminal region includes regions having a high and a low impurity concentration. The regions are provided alternately.

Abstract: A motor controlling device includes an encoder to output pulse signals with a predetermined angle interval as a rotor of a motor is rotated. An energized phase of the motor is sequentially switched by detecting a rotation position of the rotor based on a value of counting the signals. An initial drive controlling portion executes an initial drive to switch the energized phase with a predetermined pattern after the device is activated so as to learn a relationship among the count value, the rotation position and the energized phase. An initial drive prohibiting portion prohibits the execution of the initial drive until a predetermined time is elapsed after the initial drive is finished.

Abstract: A rod-lock mechanism is provided in an automatic transmission for a vehicle. The rod-lock mechanism has an engaging pin which will be engaged with a rod when the rod is in its initial position, so as to hold the rod in its initial position. The rod-lock mechanism further has an electric actuator for driving the engaging pin when electric power is supplied, so that the engaging pin is brought out of engagement from the rod. A forced parking current supply unit controls electric power supply to the electric actuator. When the electric power is supplied to the electric actuator, the rod is moved in a direction of a parking position to bring a vehicle into a parking condition.

Abstract: A motor needs to provide a first torque at the time of releasing a shift range from a parking range and needs to provide a second torque smaller than the first torque at the time of placing the shift range into the parking range. Also, the motor needs to provide a third torque smaller than the second torque at the time of changing the shift range from one non-parking range to another non-parking range and needs to provide a fourth torque smaller than the third torque at the time of executing the parking range wall abutment learning. When the parking range wall abutment learning is executed from the parking range, a motor control apparatus controls the torque to the third or fourth torque. When the parking range wall abutment learning is executed from any non-parking range, the motor control apparatus controls the torque to the first or second torque.

Abstract: A plurality of concavities and convexities is provided on tips of all rotor teeth 24 of the SR motor 5. Depths of the concave portions ? are deep on an edge side where a stator tooth 23 and rotor tooth 24 first approach and are shallow as a facing area between the stator tooth 23 and rotor tooth 24 increases. Therefore, magnetic resistance between the stator tooth 23 and rotor tooth 24 becomes high at an early stage of the stator tooth 23 and rotor tooth 24 facing each other and becomes low as the facing area between the stator tooth 23 and rotor tooth 24 increases. As a result, torque fluctuation can be suppressed at a time of a large current and a minimum generation torque can be increased at a time of a small current.

Abstract: An anisotropically conductive connector device and an inspection apparatus for circuit devices including the anisotropically conductive connector device. The anisotropically conductive connector device includes an elastic anisotropically conductive film, including plural conductive path-forming parts each extending in a thickness-wise direction of the film and arranged mutually insulated by an insulating part, a sheet-like connector including an insulating sheet, including a plurality of through-holes each extending in a thickness-wise direction, and plural electrode structures arranged in the respective through-holes in the insulating sheet to protrude from both surfaces of the insulating sheet. The electrode structures are positioned on respective conductive path-forming parts, the insulating sheet is integrally fixed to the insulating part, and the electrode structures include electrode parts that are movable in the thickness-wise direction of the sheet.

Abstract: In an electric motor of an SBW actuator, a rotor shaft is rotated upon energization of the motor. A rotor core is rotated integrally with the rotor shaft. A resilient member enables tilting or decentering of the rotor shaft upon application of a decentering force on the rotor shaft. A stator core contacts the rotor core when the rotor shaft is tilted or decentered.

Abstract: According to one embodiment, a power semiconductor device includes a first semiconductor layer, and first, second and third semiconductor regions. The first semiconductor layer has a first conductivity type. The first semiconductor regions have a second conductivity type, and are formed with periodicity in a lateral direction in a second semiconductor layer of the first conductivity type. The second semiconductor layer is provided on a major surface of the first semiconductor layer in a device portion with a main current path formed in a vertical direction generally perpendicular to the major surface and in a terminal portion provided around the device portion. The second semiconductor region has the first conductivity type and is a portion of the second semiconductor layer sandwiched between adjacent ones of the first semiconductor regions. The third semiconductor regions have the second conductivity type and are provided below the first semiconductor regions in the terminal portion.