Abstract: Disclosed are new color developing agents such as those shown below and their analogues: When the color developing agent is used, the color development is accelerated and the developed photosensitive material can be prevented from yellow stain during storage thereof.

Abstract: The invention provides a semiconductor device, having a variety of functions such as a bistable memory and a logic circuit, in which a MOS semiconductor element, a resonance tunnel diode, a hot electron transistor and the like are formed on a common substrate. An n-type Si layer and a p-type Si layer surrounded with an isolation oxide film are formed on an SOI substrate. A mask oxide film and a gate oxide film are formed, and the n-type Si layer is subjected to crystal anisotropic etching by using the mask oxide film as a mask, so as to change the n-type Si layer into the shape of a thin Si plate. After first and second tunnel oxide films are formed on side faces of this n-type Si layer, first and second polysilicon electrodes of a resonance tunnel diode and a polysilicon electrode working as a gate electrode of a MOS semiconductor element are formed out of a common polysilicon film. Thus, a Si/SiO2 type quantum device can be manufactured with ease at a low cost.

Abstract: A light transmission powder and granular material measuring apparatus for a continuous production line assembly is provided. A conduit line is capable of being connected to the production line to provide an alternative flow path for the powder and/or granular material. A light transmission cell is mounted in the conduit and a measurement apparatus is provided for measuring the light as it passes through the light transmission cell. A valve member can interconnect the conduit to the production line to control the flow of powder and/or granular material, whereby a measurement can be made when the valve is activated to permit the flow of powder and/or granular material to provide an accurate measurement, and also a measurement can be made as a reference measurement during a calibration cycle when the valve is activated to stop the flow of powder and/or granular material.

Abstract: A quantization functional device includes: a silicon thin layer having a first surface and a second surface each made of a predetermined crystal surface, and the silicon thin layer being formed of single crystalline silicon having a thickness sufficiently thin to function as a quantum well; a pair of tunnel barriers respectively provided on the first and second surfaces of the silicon thin layer; and a first electrode and a second electrode operatively coupled to each other and formed so as to interpose the silicon thin layer and the pair of the tunnel barriers therebetween.

Abstract: The invention provides a semiconductor device, having a variety of functions such as a bistable memory and a logic circuit, in which a MOS semiconductor element, a resonance tunnel diode, a hot electron transistor and the like are formed on a common substrate. An n-type Si layer and a p-type Si layer surrounded with an isolation oxide film are formed on an SOI substrate. A mask oxide film and a gate oxide film are formed, and the n-type Si layer is subjected to crystal anisotropic etching by using the mask oxide film as a mask, so as to change the n-type Si layer into the shape of a thin Si plate. After first and second tunnel oxide films are formed on side faces of this n-type Si layer, first and second polysilicon electrodes of a resonance tunnel diode and a polysilicon electrode working as a gate electrode of a MOS semiconductor element are formed out of a common polysilicon film. Thus, a Si/SiO.sub.2 type quantum device can be manufactured with ease at a low cost.

Abstract: There is provided a prosthetic leg with an extension auxiliary mechanism 1100 capable of generating an extension torque only when an angle of bending of the knee is small. A knee joint 80 of a thigh prosthesis 170 is of a multi-axis structure, and a front and a rear link 130, 150 together with an upper thigh member 110 and a lower thigh member 120 constitutes a constrained chain. An extension auxiliary mechanism 1100 having a compression spring is supported between the lower thigh member 120 and the rear link 150. An extension torque generated by the extension auxiliary mechanism 1100 is determined by a product of a force caused by biasing of the compression spring and a distance from a line of action of the force to the center of rotation of the rear link 150. Here, at a stage where the bending angle of the knee exceeds, for example, 15 degrees, an axis of the compression spring is brought generally into alignment with a connecting portion 170O between the rear link 150 and the lower thigh member 120.

Abstract: A pulsating vibration air generator in which wave height, frequency and wave shape of the pulsating vibration air can be optionally modified and such pulsating vibration air can be periodically and continuously emitted. The pulsating vibration air generator has a valve chamber with an inlet port and an outlet port where a valve plug and a valve seat with a control opening are provided and a cam mechanism which moves the valve plug to open or close the opening of the valve seat, whereby positive or negative pulsating vibration air is emitted from the outlet port while pressurized air is supplied into the inlet port or air is sucked from the inlet port.

Abstract: The method for forming a semiconductor microstructure of this invention includes the steps of: forming a mask pattern having a first opening and a second opening on a substrate having a semiconductor layer as an upper portion thereof; and selectively etching the semiconductor layer using the mask pattern to form a semiconductor microstructure extending in a first direction parallel to a surface of the substrate, wherein, in the step of selectively etching the semiconductor layer, an etching rate in a second direction vertical to the first direction and parallel to the surface of the substrate is substantially zero with respect to an etching rate in the first direction, and a width of the semiconductor microstructure is substantially equal to a shortest distance between the first opening and the second opening in the second direction.

Abstract: A developing solution for silver halide photographic material contains a six-membered heterocyclic compound having two nitrogen atoms as the constituent atoms of the six-membered ring and mercapto group, hydroxyl group and at least one substituent group other than hydrogen atom and a five-membered heterocyclic compound having two to three nitrogen atoms as the constituent atoms of the five-membered ring and at least one mercapto group. There is also disclosed a method for processing a silver halide photographic material with said developing solution.

Abstract: A method for forming a color image comprises the step of developing an image-wise exposed silver halide color photographic photosensitive material at the presence of a 6-aminotetrahydroquinoline color developing agent which is the following compound or its analoge. According to this method, the rapid process can be attained and an image of a low fog density can be obtained.

Abstract: A sprayer and method for spraying powdered material activated by pulsating vibration air. The sprayer comprises an elastic membrane, a storage tank for storing powdered material provided with the elastic membrane at the bottom opening, and a pulsating vibration air generator for supplying pulsating vibration air to the elastic membrane. The sprayer so constructed is designed to uniformly and diffusely spray the powdered material stored in the storage tank when the elastic membrane is forcedly vibrated up and down in compliance with the frequency of the pulsating vibration air by receiving pulsating vibration air from the pulsating vibration air generator.

Abstract: A silicon island portion is formed in a quantum wire so as to be sandwiched between a pair of tunnel barrier portions of a silicon oxide film. On one side of the silicon island portion, a gate electrode for potential control is disposed with a gate insulating film of a silicon oxide film interposed therebetween. On the other side of the silicon island portion, a control electrode for potential control is disposed with an insulating film of a silicon oxide film interposed therebetween. Each of the tunnel barrier portions has a quantum wire constriction structure, which is formed by oxidizing a quantum wire, i.e., a silicon oxide film formed as a field enhanced oxide film with an atomic force microscope or the like, from its surface to a substantially center portion in its section.

Abstract: A method for forming a color image comprising developing an image-wise exposed silver halide color photographic photosensitive material in the presence of certain 6-aminotetrahydroquinoline color developing compounds or analogues thereof. A rapid process can be attained and an image of a low fog density can be obtained.

Abstract: A quantization functional device includes: a silicon thin layer having a first surface and a second surface each made of a predetermined crystal surface, and the silicon thin layer being formed of single crystalline silicon having a thickness sufficiently thin to function as a quantum well; a pair of tunnel barriers respectively provided on the first and second surfaces of the silicon thin layer; and a first electrode and a second electrode operatively coupled to each other and formed so as to interpose the silicon thin layer and the pair of the tunnel barriers therebetween.

Abstract: The method for forming a semiconductor microstructure of this invention includes the steps of: forming a mask pattern having a first opening and a second opening on a substrate having a semiconductor layer as an upper portion thereof; and selectively etching the semiconductor layer using the mask pattern to form a semiconductor microstructure extending in a first direction parallel to a surface of the substrate, wherein, in the step of selectively etching the semiconductor layer, an etching rate in a second direction vertical to the first direction and parallel to the surface of the substrate is substantially zero with respect to an etching rate in the first direction, and a width of the semiconductor microstructure is substantially equal to a shortest distance between the first opening and the second opening in the second direction.

Abstract: An aminopolycarboxylic acid compound represented by the following formula or analogous thereof: ##STR1## The aminopolycarboxylic acid compound of the present invention can be used as a chelating agent for various metals, which is excellent in the biodegradability and masking effect on metals.

Abstract: By etching, a first groove and a second groove are formed in a silicon substrate. Surfaces of the side walls of these grooves have a surface orientation of (111). The first and second grooves sandwich a silicon thin plate therebetween, which is formed as a part of the silicon substrate. The silicon thin plate is sufficiently thin so as to act as a quantum well. Further, a pair of silicon oxide films acting as tunneling barriers are formed on the surfaces of the side walls of the silicon thin plate, thus forming a double barrier structure. In addition, a pair of polysilicon electrodes are formed and sandwich the double barrier structure. As a result, the structure of a resonance tunneling diode, which utilizes the resonance tunneling effect, is provided. Adding a third electrode to the above structure provides a resonance tunneling transistor.

Abstract: A method for processing a silver halide color photographic material comprising a step of processing an exposed silver halide color photographic material with an automatic processor, a color developing solution used in the processing step containing triisopropanolamine, and a conveying rate of the automatic processor being 1,100 mm/min. or more.

Abstract: A method of processing a photosensitive material is provided in which change in photographic properties is not caused and reading properties for magnetic recording information of a photosensitive material including a magnetic recording layer does not deteriorate. In the method of processing a photosensitive material using a photosensitive material processing apparatus in which a photosensitive material is immersed in processing solutions respectively accommodated in a plurality of processing tanks which are provided adjacent to each other along a direction in which the photosensitive material is conveyed, the photosensitive material processing apparatus includes a conveying roller pair for conveying the photosensitive material, which is provided in at least one portion of the processing apparatus, and a partition portion which is partitioned by a roller provided between adjacent processing tanks of the plurality of processing tanks and which allows the photosensitive material to pass therethrough.

Abstract: A rotary-type tabletting machine with lubricant spraying means, wherein a turn table has plural penetrated holes comprising dies provided at fixed intervals in a ring-like arrangement, each hole is provided with a pair of punches above and under the hole, each pair of punches is rotated together with the turn table and execute piston operation so that tablets are continuously produced by compressing pharmaceutical material filled in the die. The rotary-type tabletting machine is provided with a spraying chamber with an upper open end for inserting an upper punch and enclosing the die when the turn table moves to a rotation position which is after a rotation position where a molded table is discharged and before a rotation position where pharmaceutical material is filled in the die. A spray connected with the spraying chamber sprays lubricant in the spraying chamber, and pulsating air generating means connected with the spraying chamber diffuses. The lubricant sprayed in the spraying chamber.