Abstract: Apparatus for inspection and fault analysis of semiconductor chip includes stage on which to mount LSI chip, and test pattern generator supplying test pattern via stage to LSI chip. Apparatus also includes optical system having function of modulating laser beam. This optical system operates so that LSI chip is scanned and illuminated by modulated laser beam. IR-OBIRCH controller performs image processing of taking out only signal of preset frequency from signal from LSI chip via lock-in amplifier, and correlates signal taken out with scanning points. Lock-in amplifier is adapted to take out only signal of preset frequency from signal from LSI chip. A display section displays image based on image signal from IR-OBIRCH controller which confirms presence or absence of abnormal current route in LSI chip based on image signal.

Abstract: Failure analysis method includes performing fixed radiation of semiconductor chip (wafer) by photocurrent generation laser beam, scanning and radiating a region to be observed on semiconductor chip by heating laser beam, detecting, by a SQUID fluxmeter, current change generated in the semiconductor chip by radiating the photocurrent generation laser beam and the heating laser beam, and analyzing failure of the semiconductor chip based on current change detected by the SQUID fluxmeter. Radiation of photocurrent generation laser beam and heating laser beam are performed from a back surface side of the LSI chip, and detection by the SQUID fluxmeter is performed on a front surface side of the LSI chip. In analysis of failure of the LSI chip, image processing is performed in which a signal outputted from the SQUID fluxmeter is made to correspond to a scanning point. Visualization of defects is possible.

Abstract: A non-destructive testing method of improved efficiency. Two one-dimensional images are obtained by scanning an optical line over an object to be tested in an X- and Y-directions each for one scan in lieu of conducting a prior art method of two-dimensionally scanning a optical spot on the object to be tested. A two-dimensional image is reconstructed from the obtained two one-dimensional images. Since only two relative scans between the object to be tested and the optical line is necessary, scanning time is remarkably shortened in comparison with that of the prior art.

Abstract: To detect a defect without being limited to the current path of a sample. The presence or absence of a defect in a sample is detected by allowing said sample to stand for a predetermined period of time after heating said sample with a heat source and by observing the temperature distribution formed on said sample by an observation unit.

Abstract: Apparatus for inspection and fault analysis of semiconductor chip includes stage on which to mount LSI chip, and test pattern generator supplying test pattern via stage to LSI chip. Apparatus also includes optical system having function of modulating laser beam. This optical system operates so that LSI chip is scanned and illuminated by modulated laser beam. IR-OBIRCH controller performs image processing of taking out only signal of preset frequency from signal from LSI chip via lock-in amplifier, and correlates signal taken out with scanning points. Lock-in amplifier is adapted to take out only signal of preset frequency from signal from LSI chip. A display section displays image based on image signal from IR-OBIRCH controller which confirms presence or absence of abnormal current route in LSI chip based on image signal.

Abstract: Failure analysis method includes performing fixed radiation of semiconductor chip (wafer) by photocurrent generation laser beam, scanning and radiating a region to be observed on semiconductor chip by heating laser beam, detecting, by a SQUID fluxmeter, current change generated in the semiconductor chip by radiating the photocurrent generation laser beam and the heating laser beam, and analyzing failure of the semiconductor chip based on current change detected by the SQUID fluxmeter. Radiation of photocurrent generation laser beam and heating laser beam are performed from a back surface side of the LSI chip, and detection by the SQUID fluxmeter is performed on a front surface side of the LSI chip. In analysis of failure of the LSI chip, image processing is performed in which a signal outputted from the SQUID fluxmeter is made to correspond to a scanning point. Visualization of defects is possible.

Abstract: A non-destructive method of narrowing down the location of a failure in a sample includes a first step of acquiring first and second images of magnetic-field distributions obtained by scanning a laser beam irradiating first and second samples, respectively, and if there is a difference between the first and second images of the magnetic-field distributions, a second step of acquiring first and second current images from magnetic-field distributions acquired by scanning the first and second samples by a magnetic-field detector in a state in which a prescribed location on the first and second samples is being irradiated by the laser beam. The difference between the first and second current images is found and, based upon the difference image found, it becomes possible to identify a disparity in current paths relating to the prescribed location on the first and second samples.

Abstract: A non-destructive method of narrowing down the location of a failure in a sample includes a first step of acquiring first and second images of magnetic-field distributions obtained by scanning a laser beam irradiating first and second samples, respectively, and if there is a difference between the first and second images of the magnetic-field distributions, a second step of acquiring first and second current images from magnetic-field distributions acquired by scanning the first and second samples by a magnetic-field detector in a state in which a prescribed location on the first and second samples is being irradiated by the laser beam. The difference between the first and second current images is found and, based upon the difference image found, it becomes possible to identify a disparity in current paths relating to the prescribed location on the first and second samples.

Abstract: A non-destructive testing method of improved efficiency. Two one-dimensional images are obtained by scanning an optical line over an object to be tested in an X- and Y-directions each for one scan in lieu of conducting a prior art method of two-dimensionally scanning a optical spot on the object to be tested. A two-dimensional image is reconstructed from the obtained two one-dimensional images. Since only two relative scans between the object to be tested and the optical line is necessary, scanning time is remarkably shortened in comparison with that of the prior art.

Abstract: To improve spatial resolution of scanning microscopes including: a detector 130 that irradiates laser light modulated in its intensity with a modulation signal synchronized with a reference signal on an IC chip 110, receives magnetic field signals from a fluxmeter 120 and extracts signals with the same frequency components as the modulation frequency; a display 140 that displays images of the magnetic field distribution using the signal detected as described above; and the frequency of said modulation signal is higher than 100 kHz.

Abstract: An apparatus for diagnosing a fault in a semiconductor device includes an laser applying unit, a detection/conversion unit, and a fault diagnosis unit. The semiconductor device is held at a state where no bias voltage is applied thereto. The laser applying unit then applies a pulse laser beam having a predetermined wavelength to the semiconductor device so as to two-dimensionally scan the semiconductor device with the pulse laser beam. The detection/conversion unit detects an electromagnetic wave generated from a laser applied position in the semiconductor device, and converts the detected electromagnetic wave into a time-varying voltage signal that corresponds to a time-varying amplitude of an electric field of the electromagnetic wave. The fault diagnosis unit derives an electric field distribution in the semiconductor device on the basis of the time-varying voltage signal to perform fault diagnosis on the semiconductor device.

Abstract: To detect a defect without being limited to the current path of a sample. The presence or absence of a defect in a sample is detected by allowing said sample to stand for a predetermined period of time after heating said sample with a heat source and by observing the temperature distribution formed on said sample by an observation unit.

Abstract: An apparatus for diagnosing a fault in a semiconductor device includes an laser applying unit, a detection/conversion unit, and a fault diagnosis unit. The semiconductor device is held at a state where no bias voltage is applied thereto. The laser applying unit then applies a pulse laser beam having a predetermined wavelength to the semiconductor device so as to two-dimensionally scan the semiconductor device with the pulse laser beam. The detection/conversion unit detects an electromagnetic wave generated from a laser applied position in the semiconductor device, and converts the detected electromagnetic wave into a time-varying voltage signal that corresponds to a time-varying amplitude of an electric field of the electromagnetic wave. The fault diagnosis unit derives an electric field distribution in the semiconductor device on the basis of the time-varying voltage signal to perform fault diagnosis on the semiconductor device.

Abstract: In a nondestructive and noncontact analysis system for analyzing and evaluating an object, a light beam generation/modulation apparatus emits a modulated and focused light beam to thereby irradiate the object, and the modulation of the modulated and focused light beam is carried out with a modulation signal synchronized with a reference signal composed of a series of regular pulses. A magnetism detection apparatus detects a magnetic field, which is generated by an electric current induced by irradiating the object with the modulated and focused light beam, to thereby produce a magnetic field signal. A signal extraction circuit extracts a phase difference signal between the reference signal and the magnetic field signal. An image data production system produces phase difference image data based on the phase difference signal.

Abstract: A nondestructive inspection device (or method) is basically configured such that a laser beam (1300 nm) is irradiated on a surface (or back) of a semiconductor device chip to scan. Due to irradiation of the laser beam, a defect position is heated to cause a thermoelectromotive current, which induces a magnetic field. A magnetic field detector such as SQUID detects a strength of the magnetic field, based on which a scan magnetic field image is produced. A display device superimposes the scan magnetic field image on a scan laser microphotograph on a screen, so it is possible to perform defect inspection on the semiconductor device chip. Incidentally, a semiconductor device wafer is constructed to include a thermoelectromotive force generator and its wires, which are electrically connected to first-layer wires. By irradiation of the laser beam on the thermoelectromotive force generator, it is possible to detect a short-circuit defect, which lies between the first-layer wires.

Abstract: A nondestructive inspection device (or method) is basically configured such that a laser beam (1300 nm) is irradiated on a surface (or back) of a semiconductor device chip to scan. Due to irradiation of the laser beam, a defect position is heated to cause a thermoelectromotive current, which induces a magnetic field. A magnetic field detector such as SQUID detects a strength of the magnetic field, based on which a scan magnetic field image is produced. A display device superimposes the scan magnetic field image on a scan laser microphotograph on a screen, so it is possible to perform defect inspection on the semiconductor device chip. Incidentally, a semiconductor device wafer is constructed to include a thermoelectromotive force generator and its wires, which are electrically connected to first-layer wires. By irradiation of the laser beam on the thermoelectromotive force generator, it is possible to detect a short-circuit defect, which lies between the first-layer wires.

Abstract: To provide a non-destructive inspection method including: a first step of generating a laser light ranging in wavelength from 300 nm to 1,200 nm, and generating a laser beam converging into a predetermined beam diameter; a second step of predetermined electrical connection means configuring a predetermined current path for passing an OBIC current generated by an OBIC phenomenon when the laser beam is radiated onto the p-n junction and the vicinity of the p-n junction formed in the semiconductor chip to be inspected at least in the substrate including a wafer state and an installation state during the production process; a third step of scanning a predetermined area of a semiconductor chip while radiating the laser beam; a fourth step of magnetic flux detection means detecting magnetic flux induced by the OBIC current generated by the laser beam at each radiation point scanned in the third step; and a fifth step of determining whether or not there is a resistance increase defect including a disconnection defec

Abstract: A nondestructive inspection device (or method) is basically configured such that a laser beam (1300 nm) is irradiated on a surface (or back) of a semiconductor device chip to scan. Due to irradiation of the laser beam, a defect position is heated to cause a thermoelectromotive current, which induces a magnetic field. A magnetic field detector such as SQUID detects a strength of the magnetic field, based on which a scan magnetic field image is produced. A display device superimposes the scan magnetic field image on a scan laser microphotograph on a screen, so it is possible to perform defect inspection on the semiconductor device chip. Incidentally, a semiconductor device wafer is constructed to include a thermoelectromotive force generator and its wires, which are electrically connected to first-layer wires. By irradiation of the laser beam on the thermoelectromotive force generator, it is possible to detect a short-circuit defect, which lies between the first-layer wires.

Abstract: A nondestructive inspection device (or method) is basically configured such that a laser beam (1300 nm) is irradiated on a surface (or back) of a semiconductor device chip to scan. Due to irradiation of the laser beam, a defect position is heated to cause a thermoelectromotive current, which induces a magnetic field. A magnetic field detector such as SQUID detects a strength of the magnetic field, based on which a scan magnetic field image is produced. A display device superimposes the scan magnetic field image on a scan laser microphotograph on a screen, so it is possible to perform defect inspection on the semiconductor device chip. Incidentally, a semiconductor device wafer is constructed to include a thermoelectromotive force generator and its wires, which are electrically connected to first-layer wires. By irradiation of the laser beam on the thermoelectromotive force generator, it is possible to detect a short-circuit defect, which lies between the first-layer wires.

Abstract: A nondestructive inspection device (or method) is basically configured such that a laser beam (1300 nm) is irradiated on a surface (or back) of a semiconductor device chip to scan. Due to irradiation of the laser beam, a defect position is heated to cause a thermoelectromotive current, which induces a magnetic field. A magnetic field detector such as SQUID detects a strength of the magnetic field, based on which a scan magnetic field image is produced. A display device superimposes the scan magnetic field image on a scan laser microphotograph on a screen, so it is possible to perform defect inspection on the semiconductor device chip. Incidentally, a semiconductor device wafer is constructed to include a thermoelectromotive force generator and its wires, which are electrically connected to first-layer wires. By irradiation of the laser beam on the thermoelectromotive force generator, it is possible to detect a short-circuit defect, which lies between the first-layer wires.