Abstract: To provide a non-destructive inspection method including: a first step of generating a laser light ranging in wavelength from 300 nm to 1,200 nm, and generating a laser beam converging into a predetermined beam diameter; a second step of predetermined electrical connection means configuring a predetermined current path for passing an OBIC current generated by an OBIC phenomenon when the laser beam is radiated onto the p-n junction and the vicinity of the p-n junction formed in the semiconductor chip to be inspected at least in the substrate including a wafer state and an installation state during the production process; a third step of scanning a predetermined area of a semiconductor chip while radiating the laser beam; a fourth step of magnetic flux detection means detecting magnetic flux induced by the OBIC current generated by the laser beam at each radiation point scanned in the third step; and a fifth step of determining whether or not there is a resistance increase defect including a disconnection defec

Abstract: Laser beam 104 having an irradiation power not less than 1 mW is irradiated onto an observed region, and a variation in a power source current 112 is detected. When the laser beam 104 is irradiated onto a parasitic insulating film 107 which is a parasitic MIM structural spot, the current 112 increases due to a temperature characteristic of the current 112 flowing through the parasitic insulating film 107, whereby the portion of the parasitic MIM structure can be detected. Moreover, laser beam 108 having a wavelength not less than 1.0 &mgr;m is irradiated onto an observed region from the back surface of the chip, and a variation in the power source current is detected. Light having a wavelength not less than 1.0 &mgr;m has the ability to travel through a Si substrate 110 so that the laser beam reaches a wiring portion. Irradiation of the laser beam onto the parasitic insulating film 107 having the parasitic MIM structure increases the current, so that the portion of the parasitic MIM structure can be detected.

Abstract: Infrared laser beam (11) is irradiated onto an integrated circuit (12) as a sample mounted on a sample stage (21) from an infrared laser beam source (23) through a microscope section body (24) and an objective lens (25). A constant voltage source (15) is connected to a power source terminal of the integrated circuit (12). A variation in a current due to a variation in a resistance of a wiring portion due to the irradiation is produced at a ground terminal of the integrated circuit (12). A current variation inspection section (17) detects the current variation. A system control/signal processing section (27) processes the signal and allows an image/waveform display section (28) to display a current image, a defect image or a current waveform. A defect of a wiring may be detected using visible light beam after localization of a suspected failure portion using infrared beam.

Abstract: A supersonic wave beam producing device projects a supersonic wave beam 5 on a semiconductor integrated circuit chip 2 while a voltage is supplied to a semiconductor integrated circuit in the chip from a constant voltage source 1. A current detecting device 7 detects a change of a current in the circuit while the chip is supplied with the supersonic wave beam. In this event, the constant voltage source may be omitted. A supersonic wave beam producing device may project a supersonic wave beam 5 on a semiconductor integrated circuit chip 2 while a current is supplied to a semiconductor integrated circuit. In this event, a voltage detecting device detects a change of a voltage between two ones of terminals of the circuit.

Abstract: An ultrasonic wave beam producing device scans an ultrasonic wave beam 5 across a semiconductor integrated circuit chip 2 while detecting a voltage applied across the semiconductor integrated circuit chip 2 from a constant voltage source 1. In this way the semiconductor integrated circuit chip is tested without creating electron-hole pairs.

Abstract: While an ultrasonic wave beam producing device scans an ultrasonic wave beam 5 across a semiconductor integrated circuit chip 2, a current through the circuit chip is detected. In this way, the semiconductor integrated circuit chip may be accurately tested, and the creation of electron-hole pairs is avoided.

Abstract: Infrared laser beam (11) is irradiated onto an integrated circuit (12) as a sample mounted on a sample stage (21) from an infrared laser beam source (23) through a microscope section body (24) and an objective lens (25). A constant voltage source (15) is connected to a power source terminal of the integrated circuit (12). A variation in a current due to a variation in a resistance of a wiring portion due to the irradiation is produced at a ground terminal of the integrated circuit (12). A current variation inspection section (17) detects the current variation. A system control/signal processing section (27) processes the signal and allows an image/waveform display section (28) to display a current image, a defect image or a current waveform. A defect of a wiring may be detected using visible light beam after localization of a suspected failure portion using infrared beam.

Abstract: In a system for evaluating a semiconductor device, a laser beam generating unit generates a laser beam, and an optical fiber receives the laser beam to heat an area of the semiconductor device. A current deviation detector or a voltage deviation detector is connected to a terminal of the semiconductor device. As a result, the current deviation detector or the voltage deviation detector detects a current deviation or a voltage deviation at the terminal of the semiconductor device.

Abstract: A supersonic wave beam producing device projects a supersonic wave beam 5 on a semiconductor integrated circuit chip 2 while a voltage is supplied to a semiconductor integrated circuit in the chip from a constant voltage source 1. A current detecting device 7 detects a change of a current in the circuit while the chip is supplied with the supersonic wave beam. In this event, the constant voltage source may be omitted. A supersonic wave beam producing device may project a supersonic wave beam 5 on a semiconductor integrated circuit chip 2 while a current is supplied to a semiconductor integrated circuit. In this event, a voltage detecting device detects a change of a voltage between two ones of terminals of the circuit.

Abstract: A method for estimating current or detecting defects in an interconnection by monitoring current change of the interconnection. A radiation beam such as a laser, electron or ion beam is irradiated to a subject region to be observed while scanning points of the subject region. Decrease of the supply current during the scanning is detected in the power supply line. The amount of decrease is approximately proportional to the current flowing originally. The value of the current in the interconnection or a defect existing in the interconnection can be estimated or found from the decreased amount. One of or the combination of selective scanning, threshold selection and thin film deposition makes it possible to apply this method to an actual device.

Abstract: A dynamic fault analyzing system discontinuously radiates an electron beam onto a semiconductor integrated circuit device applied with a test pattern for monitoring a secondary electron beam produced in the semiconductor integrated circuit device, and the intensity of the secondary electron beam is varied depending upon combination of voltage level and topography of a wiring pattern incorporated in the semiconductor integrated circuit device, wherein a fault is detectable from discrepancy between variation of the secondary electron beam produced in a defective product and variation of the secondary electron beam produced in an excellent product; however, the variation of the secondary electron beam contains topographic information, and the failure origin is easily specified on an image produced on the basis of the topographic information.

Abstract: A semiconductor integrated circuit fault analyzing apparatus includes an electron beam tester and controller. The electron beam tester includes an electron gun assembly for generating a primary electron beam and forms a voltage contrast image on the basis of a detection amount of secondary electrons obtained by irradiating the primary electron beam from the electron gun assembly onto a semiconductor integrated circuit serving as a target to be tested and supplied with a test pattern signal, thereby specifying a faulty circuit portion of the semiconductor integrated circuit using the formed voltage contrast image.

Abstract: The invention provides an apparatus for diagnosing a void within a conductive material for interconnections of semiconductor integrated circuits. A laser beam irradiating section is provided for supplying a thermal wave to interconnections of the semiconductor integrated circuits to cause a rise of a temperature of the conductive material due to a thermal accumulation around a void within the conductive material, the thermal wave supplying section being able to move in a plane for accomplishment of a scanning operation of the thermal wave supply. A voltage applying section is connected to the interconnections.

Abstract: A semiconductor device comprises a lower wiring layer, an intermediate insulating film on the lower wiring layer and an upper wiring layer crossing the lower wiring layer via the intermediate insulating film. At least one opening is provided in the intermediate insulating film in the vicinity of the upper wiring layer but separated from the upper wiring layer to expose a surface portion of the lower wiring layer. In such a structure, when an electrical current flows through the lower wiring layer with a high density, whiskers or hillocks from the lower wiring layer grow definitively only in the opening, and hardly glow from a portion of the lower wiring layer under the upper wiring layer. Therefore, unwanted short-circuiting between the lower and upper wiring layers can be prevented.