Abstract: This invention provides a polyolefin-based resin composition excellent in mechanical strength and elasticity. The polyolefin-based resin composition comprises a polyolefin-based resin, and, per 100 parts by mass of the polyolefin-based resin, 0.05 to 10 parts by mass of an aliphatic polycarbonate resin and 0.01 to 2 parts by mass of an acid modified polypropylene.

Abstract: The present invention provides a polyolefin-based resin composition that has improved resilience while maintaining mechanical strength and stretching properties, as well as a molded article and a polyolefin-based resin film formed from this composition. The polyolefin-based resin composition comprises a polyolefin-based resin, a polyalkylene carbonate resin, and an ionic liquid. The polyolefin-based resin film of the present invention is formed by molding the polyolefin-based resin composition and is stretched at least in a monoaxial direction.

Abstract: The present invention aims to provide a polyester resin composition capable of producing a molded article having excellent stretchability. The present invention also aims to provide a molded article including the polyester resin composition. The present invention relates to a polyester resin composition including: a polyester resin; and a polyrotaxane that has a cyclic molecule, a linear molecule threading through a cavity of the cyclic molecule in a skewered manner, and capping groups capping both ends of the linear molecule.

Abstract: The invention provides an oxide semiconductor layer that has less cracks and is excellent in electrical property and stability, as well as a semiconductor element and an electronic device each including the oxide semiconductor layer. The invention provides an exemplary method of producing an oxide semiconductor layer, and the method includes the precursor layer forming step of forming, on or above a substrate, a layered oxide semiconductor precursor including a compound of metal to be oxidized into an oxide semiconductor dispersed in a solution including a binder made of aliphatic polycarbonate, and the annealing step of heating the precursor layer at a first temperature achieving decomposition of 90 wt % or more of the binder, and then annealing the precursor layer at a temperature equal to or higher than a second temperature (denoted by X) that is higher than the first temperature, achieves bonding between the metal and oxygen, and has an exothermic peak value in differential thermal analysis (DTA).

Abstract: The invention provides an oxide semiconductor layer that has less cracks and is excellent in electrical property and stability, as well as a semiconductor element and an electronic device each including the oxide semiconductor layer. The invention provides an exemplary method of producing an oxide semiconductor layer, and the method includes the precursor layer forming step of forming, on or above a substrate, a layered oxide semiconductor precursor including a compound of metal to be oxidized into an oxide semiconductor dispersed in a solution including a binder made of aliphatic polycarbonate, and the annealing step of heating the precursor layer at a first temperature achieving decomposition of 90 wt % or more of the binder, and then annealing the precursor layer at a temperature equal to or higher than a second temperature (denoted by X) that is higher than the first temperature, achieves bonding between the metal and oxygen, and has an exothermic peak value in differential thermal analysis (DTA).

Abstract: It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a source/drain region without through processes under a vacuum or a low pressure or with no use of expensive equipment. An exemplary method for producing a thin film transistor according to the invention includes an aliphatic polycarbonate layer forming step of forming an aliphatic polycarbonate layer 50 that covers a gate electrode layer 40 disposed above a semiconductor layer 20 with a gate insulator 30 being interposed between the gate electrode layer 40 and the semiconductor layer 20, and also covers the semiconductor layer 20, and has a dopant causing the semiconductor layer 20 to become an n-type or p-type semiconductor layer, and a heating step of heating at a temperature causing introduction of the dopant into the semiconductor layer 20 and decomposition of the aliphatic polycarbonate layer 50.

Abstract: This invention provides a polyolefin-based resin composition excellent in mechanical strength and elasticity. The polyolefin-based resin composition comprises a polyolefin-based resin, and, per 100 parts by mass of the polyolefin-based resin, 0.05 to 10 parts by mass of an aliphatic polycarbonate resin and 0.01 to 2 parts by mass of an acid modified polypropylene.

Abstract: The invention provides an oxide semiconductor layer that has less cracks and is excellent in electrical property and stability, as well as a semiconductor element and an electronic device each including the oxide semiconductor layer. The invention provides an exemplary method of producing an oxide semiconductor layer, and the method includes the precursor layer forming step of forming, on or above a substrate, a layered oxide semiconductor precursor including a compound of metal to be oxidized into an oxide semiconductor dispersed in a solution including a binder made of aliphatic polycarbonate, and the annealing step of heating the precursor layer at a first temperature achieving decomposition of 90 wt % or more of the binder, and then annealing the precursor layer at a temperature equal to or higher than a second temperature (denoted by X) that is higher than the first temperature, achieves bonding between the metal and oxygen, and has an exothermic peak value in differential thermal analysis (DTA).

Abstract: The present invention is: a cooling apparatus, capable of extending the service life of a blast furnace by suppressing the molten-iron-induced erosion of a carbon brick in the sidewall of a blast furnace bottom by preventing the cooling ability for the carbon brick from deteriorating, structured to bond a metal cooler to the carbon brick with an adhesive containing carbon powder, a synthetic resin and a hardening agent, and form a bonding layer containing 50 mass % or more, preferably 50 to 85 mass %, of solid carbon between the cooler and the carbon brick; and a cooling apparatus according to the above further structured to embed anchor bolts at an end in the carbon brick, have the other end of the anchor bolts pierce the cooler, and fasten the cooler to the carbon brick with the anchor bolts by tightening lock nuts with washers having a spring function provided between the nuts and the cooler.

Abstract: The present invention is: a cooling apparatus, capable of extending the service life of a blast furnace by suppressing the molten-iron-induced erosion of a carbon brick in the sidewall of a blast furnace bottom by preventing the cooling ability for the carbon brick from deteriorating, structured to bond a metal cooler to the carbon brick with an adhesive containing carbon powder, a synthetic resin and a hardening agent, and form a bonding layer containing 50 mass % or more, preferably 50 to 85 mass %, of solid carbon between the cooler and the carbon brick; and a cooling apparatus according to the above further structured to embed anchor bolts at an end in the carbon brick, have the other end of the anchor bolts pierce the cooler, and fasten the cooler to the carbon brick with the anchor bolts by tightening lock nuts with washers having a spring function provided between the nuts and the cooler.

Abstract: A method of estimating the properties of a steel product, comprising completing a computation for determining metallurgical phenomena based on information concerning steel ingredients and production conditions in steps from casting to heat treatment to successively determine the state of a metallic structure and estimating the properties of a steel product from the final state of the metallic structure.