Abstract: A method for growing a ?-Ga2O3 single includes preparing a ?-Ga2O3 seed crystal and growing the ?-Ga2O3 single crystal from the ?-Ga2O3 seed crystal in a predetermined direction.

Abstract: A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1-X-Y))2O3 where 0?x?1, 0?y?1 and 0?x+y?1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.

Abstract: A method for growing a ?-Ga2O3 single crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high quality, a GazO3 light-emitting device capable of emitting a light in the ultraviolet region, and its manufacturing method are disclosed. In an infrared-heating single crystal manufacturing system, a seed crystal and polycrystalline material are rotated in mutually opposite directions and heated, and a ?-Ga2O3 single crystal is grown in one direction selected from among the a-axis <100> direction, the b-axis <010> direction, and the c-axis <001> direction. A thin film of a ?-Ga2O3 single crystal is formed by PLD. A laser beam is applied to a target to excite atoms constituting the target Ga atoms are released from the target by thermal and photochemical actions. The free Ga atoms are bonded to radicals in the atmosphere in the chamber.

Abstract: To provide a Ga2O3 compound semiconductor device in which a Ga2O3 system compound is used as a semiconductor, which has an electrode having ohmic characteristics adapted to the Ga2O3 system compound, and which can make a heat treatment for obtaining the ohmic characteristics unnecessary. An n-side electrode 20 including at least a Ti layer is formed on a lower surface of an n-type ?-Ga2O3 substrate 2 by utilizing a PLD method. This n-side electrode 20 has ohmic characteristics at 25° C. The n-side electrode 20 may have two layer including a Ti layer and an Au layer, three layers including a Ti layer, an Al layer and an Au layer, or four layers including a Ti layer, an Al layer, a Ni layer and an Au layer.

Abstract: A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1-X-Y))2O3 where 0?x?1, 0?y?1 and 0?x+y?1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.

Abstract: Disclosed are a method for producing a p-type Ga2O3 film and a method for producing a pn junction-type Ga2O3 film which enable to form a thin film composed of a high-quality Ga2O3 compound semiconductor. Specifically, the pressure in a vacuum chamber (52) is reduced, and while introducing oxygen radicals, a cell (55a) is heated for producing a Ga molecular beam (90) and a cell (55b) is heated for producing an Mg molecular beam (90). Then, a substrate (25) composed of a Ga2O3 compound is irradiated with the Ga molecular beam (90) and the Mg molecular beam (90), so that a p-type ?-Ga2O3 film composed of p-type ?-Ga2O3 is grown on the substrate (25).

Abstract: A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1?X?Y))2O3 where 0?x?1, 0?y?1 and 0?x+y?1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.

Abstract: To provide a method of controlling a conductivity of a Ga2O3 system single crystal with which a conductive property of a ?-Ga2O3 system single crystal can be efficiently controlled. The light emitting element includes an n-type ?-Ga2O3 substrate, and an n-type ?-AlGaO3 cladding layer, an active layer, a p-type ?-AlGaO3 cladding layer and a p-type ?-Ga2O3 contact layer which are formed in order on the n-type ?-Ga2O3 substrate. A resistivity is controlled to fall within the range of 2.0×10?3 to 8×102 ?cm and a carrier concentration is controlled to fall within the range of 5.5 ×1015 to 2.0×1019/cm3 by changing a Si concentration within the range of 1×10?5 to 1 mol %.

Abstract: To provide a semiconductor layer in which a GaN system epitaxial layer having high crystal quality can be obtained. The semiconductor layer includes a ?-Ga2O3 substrate 1 made of a ?-Ga2O3 single crystal, a GaN layer 2 formed by subjecting a surface of the ?-Ga2O3 substrate 1 to nitriding processing, and a GaN growth layer 3 formed on the GaN layer 2 through epitaxial growth by utilizing an MOCVD method. Since lattice constants of the GaN layer 2 and the GaN growth layer 3 match each other, and the GaN growth layer 3 grows so as to succeed to high crystalline of the GaN layer 2, the GaN growth layer 3 having high crystalline is obtained.

Abstract: A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.

Abstract: A metal halide for radiation detection, which is represented by the general formula ReALuBMe1-A-BXD where Re is at least one element among rare earth elements other than Lu, Me is at least one metallic element other than a rare earth element, X is a halogen, A+B<0.5, A?0, B?0, and 1?D?6.

Abstract: A method for growing a ?-Ga2O3 single crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high quality, a GazO3 light-emitting device capable of emitting a light in the ultraviolet region, and its manufacturing method are disclosed. In an infrared-heating single crystal manufacturing system, a seed crystal and polycrystalline material are rotated in mutually opposite directions and heated, and a ?-Ga2O3 single crystal is grown in one direction selected from among the a-axis <100> direction, the b-axis <010> direction, and the c-axis <001> direction. A thin film of a ?-Ga2O3 single crystal is formed by PLD. A laser beam is applied to a target to excite atoms constituting the target Ga atoms are released from the target by thermal and photochemical actions. The free Ga atoms are bonded to radicals in the atmosphere in the chamber.

Abstract: The invention provides a fluoride single crystal for detecting radiation having high luminescence intensity, a scintillator, a radiation detector employing the single crystal and a method for detecting radiation. The fluoride single crystal for detecting radiation contains Ce and at least one element (R1) of Lu and Gd, wherein the single crystal is represented by Ce1-xR1xF3 (0.001?x?0.5).

Abstract: The present invention provides a fluoride single-crystal material for use in a thermoluminescence dosimeter, which material exhibits a thermoluminescence efficiency higher than that of conventional similar materials, and a thermoluminescence dosimeter employing the material. The fluoride single-crystal material for use in a thermoluminescence dosimeter contains a compound represented by LiXAlF6, wherein X is selected from the group consisting of Ca, Sr, Mg, and Ba, and, serving as a dopant, at least one species selected from among Ce, Na, Eu, Nd, Pr, Tm, Tb, and Er.

Abstract: A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1?X?Y))2O3 where 0?x?1, 0?y?1 and 0?x+y?1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.

Abstract: A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1?X?Y))2O3 where 0?x?1, 0?y?1 and 0?x+y?1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.

Abstract: The invention provides a fluoride single crystal for detecting radiation having high luminescence intensity, a scintillator, a radiation detector employing the single crystal and a method for detecting radiation. The fluoride single crystal for detecting radiation contains Ce and at least one element (R1) of Lu and Gd, wherein the single crystal is represented by Ce1-xR1xF3 (0.001?x?0.5).

Abstract: A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1−X−Y))2O3 where 0≦x≦1, 0≦y≦1 and 0≦x+y≦1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.

Abstract: A process is disclosed for producing an integrated composite oxide single crystal body composed of a core portion made of an oxide single crystal and a clad portion integrated with the core portion and made of another oxide single crystal having a composition different from that of the oxide single crystal constituting the core portion, the process comprising the steps of: (1) preparing a first melt in a first crucible by melting a first material for a first oxide single crystal to constitute the core portion inside the first crucible, (2) preparing a second melt inside a second crucible by melting a second material for a second oxide single crystal to constitute the clad portion inside the second crucible, (3) contacting a seed crystal to the first and second melts, (4) pulling down the first melt through a pull-out opening of the first crucible, (5) pulling down the second melt through a pull-out opening of the second crucible and contacting the pulled-down second melt with a pulled-down portion of the firs

Abstract: A graft copolymer having a styrene polymer grafted onto a trunk polymer consituted of (a) hydrogenated block copolymer of a styrene compound and a diene compound and (b) an olefinic polymer or copolymer is blended with a polyphenylene ether type resin to give a resin composition reduced in anisotropy and having good oil resistance and mechanical properties.