Abstract: A piezoelectric element structure comprises a supporting substrate, and a piezoelectric film supported on the supporting substrate, in which the piezoelectric film contains a first layer, and a second layer having zirconium, each provided with perovskite structure, and formed to be in contact with each other or laminated through an intermediate layer, and the temperature is set at 500° C. or more at the time of thin film formation so as to provide the piezoelectric film, and a quick cooling is given from the thin film formation temperature at least to 450° C. with a cooling speed of 30° C./min or more for the formation thereof. The piezoelectric film thus formed is in a small thickness as compared with the conventional piezoelectric film, but presents a large piezoelectric constant, hence making it possible to perform efficient microprocessing thereof reliably.

Abstract: A dielectric element includes a lower electrode layer provided on a substrate, a dielectric layer provided on the lower electrode layer and an upper electrode layer provided on the dielectric layer. The dielectric layer has a first dielectric layer provided on a side of the lower electrode layer, and a second dielectric layer provided on a side of the upper electrode layer. The second dielectric layer is a layer comprised mainly of an oxide including four or more kinds of metal element components, and the first dielectric layer does not substantially include at least one component selected from metal elements included in the oxide layer of the second dielectric layer and is comprised mainly of an oxide including at least three components selected from the remaining metal elements without substantially including Ti and Zr elements.

Abstract: A dielectric element having a dielectric layer provided between an upper electrode layer and a lower electrode layer, wherein the dielectric layer has a first dielectric layer and a second dielectric layer mutually different in composition, and composition of at least one component of the first dielectric layer changes as to a thickness direction of the first dielectric layer in proximity to a boundary between the first dielectric layer and the second dielectric layer.

Abstract: A piezoelectric element structure comprises a supporting substrate, and a piezoelectric film supported on the supporting substrate, in which the piezoelectric film contains a first layer, and a second layer having zirconium, each provided with perovskite structure, and formed to be in contact with each other or laminated through an intermediate layer, and the temperature is set at 500° C. or more at the time of thin film formation so as to provide the piezoelectric film, and a quick cooling is given from the thin film formation temperature at least to 450° C. with a cooling speed of 30° C./min or more for the formation thereof. The piezoelectric film thus formed is in a small thickness as compared with the conventional piezo-electric film, but presents a large piezoelectric constant, hence making it possible to perform efficient microprocessing thereof reliably.

Abstract: A method of manufacturing a piezoelectric element structure having a supporting substrate and a piezoelectric film supported on the supporting substrate. A first layer, and a second layer having zirconium, each provided with a perovskite structure, are formed in that order on the supporting substrate. The two layers are formed to be in contact with each other or laminated through an intermediate layer. The temperature is set to 500° C. or more at the time of formation of the layers, and cooling is subsequently provided from the formation temperature at least to 450° C. with a cooling speed of 30° C./min or more.

Abstract: A piezoelectric structure includes a vibrational plate and a piezoelectric film. The vibrational plate includes a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials. Oxide layers sandwich the aforementioned layer. The piezoelectric film has a single orientation crystal or monocrystal structure.

Abstract: A piezoelectric structure includes a vibrational plate; a piezoelectric film; the vibrational plate including a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials, and oxide layers sandwiching the aforementioned layer, the piezoelectric film has a single orientation crystal or monocrystal structure.

Abstract: An actuator comprises a laminated structure having a vibration plate, a lower electrode, a piezoelectric element, and an upper electrode laminated sequentially on a basic element, and then, at least the lower electrode of the two electrodes is a thin oxide film doped with La of single orientated crystal or monocrystal that contains Sr and Ti. Thus, it is made possible to materialize the micro miniaturized actuator having a strong structure of lamination with high adhesion, which is capable of obtaining large displacement with sufficient durability without spoiling the piezo-electrostrictive property thereof even with the small thickness of the piezoelectric element. With the micro miniaturized actuator thus structured, it is made possible to make a liquid discharge head more precisely.

Abstract: A piezoelectric structure includes a vibrational plate; a piezoelectric film; the vibrational plate including a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials, and oxide layers sandwiching the aforementioned layer, the piezoelectric film has a single orientation crystal or monocrystal structure.

Abstract: A dielectric element in which a substrate, a lower electrode layer, a dielectric layer and an upper electrode layer are provided in this order, wherein the dielectric layer has a first dielectric layer of which major component is an oxide and provided on a side of said lower electrode layer, and a second dielectric layer of which major component is an oxide and provided on a side of said upper electrode layer, and the second dielectric layer is thicker than the first dielectric layer, and a formula (1) described below is satisfied when a dielectric constant of the first dielectric layer at 25° C. is ?1 and a dielectric constant of the second dielectric layer at 25° C. is ?2. ?1/?2?0.

Abstract: A dielectric element having a dielectric layer provided between an upper electrode layer and a lower electrode layer, wherein the dielectric layer has a first dielectric layer and a second dielectric layer mutually different in composition, and composition of at least one component of the first dielectric layer changes as to a thickness direction of the first dielectric layer in proximity to a boundary between the first dielectric layer and the second dielectric layer.

Abstract: A substrate for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.

Abstract: A substrate for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.

Abstract: An actuator comprises a laminated structure having a vibration plate, a lower electrode, a piezoelectric element, and an upper electrode laminated sequentially on a basic element, and then, at least the lower electrode of the two electrodes is a thin oxide film doped with La of single orientated crystal or monocrystal that contains Sr and Ti. Thus, it is made possible to materialize the micro miniaturized actuator having a strong structure of lamination with high adhesion, which is capable of obtaining large displacement with sufficient durability without spoiling the piezo-electrostrictive property thereof even with the small thickness of the piezoelectric element. With the micro miniaturized actuator thus structured, it is made possible to make a liquid discharge head more precisely.

Abstract: A substrate for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.

Abstract: A substrata for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.

Abstract: A piezoelectric structure includes a vibrational plate; a piezoelectric film; the vibrational plate including a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials, and oxide layers sandwiching the aforementioned layer, the piezoelectric film has a single orientation crystal or monocrystal structure.

Abstract: A piezoelectric element structure comprises a supporting substrate, and a piezoelectric film supported on the supporting substrate, in which the piezoelectric film contains a first layer, and a second layer having zirconium, each provided with perovskite structure, and formed to be in contact with each other or laminated through an intermediate layer, and the temperature is set at 500° C. or more at the time of thin film formation so as to provide the piezoelectric film, and a quick cooling is given from the thin film formation temperature at least to 450° C. with a cooling speed of 30° C./min or more for the formation thereof. The piezoelectric film thus formed is in a small thickness as compared with the conventional piezoelectric film, but presents a large piezoelectric constant, hence making it possible to perform efficient microprocessing thereof reliably.

Abstract: There is disclosed a method for annealing oxide thin film superconductors having layered structures including at least Cu--O layers in which each oxide thin film superconductor is heated partially by a heating means and the heating portion is moved at a predetermined speed.

Abstract: A manufacturing method for the thin film superconductor is disclosed in which photons having energies larger than ultraviolet rays are irradiated to the thin film superconductor on or after formation of the thin film. Further, manufacturing methods for superconductive magnetic memory, Josephson device and superconductive transistor are disclosed.