Patents by Inventor Kiyotaka Wasa

Kiyotaka Wasa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5047390
    Abstract: A Josephson device, comprising a junction formed by forming the first layer-shaped oxide superconductor thin film including a plurality of Cu-O layers on a substrate, a barrier layer thereon and the second layer-shaped oxide superconductor thin film on the barrier layer. The Josephson device according to the present invention is manufactured by forming the first layer-shaped oxide superconductor thin film on a substrate, forming a barrier layer in the same vacuum chamber, defining patterns to said barrier layer and said first layer-shaped oxide superconductor thin film, forming an interlayer insulating film on said barrier layer, removing said interlayer insulating film in a region serving as a junction, effecting exposure to oxygen plasma, forming the second layer-shaped oxide superconductor thin film in contact with a part of the surface of said barrier layer and defining patterns to said second layer-shaped oxide superconductor thin film.
    Type: Grant
    Filed: September 27, 1989
    Date of Patent: September 10, 1991
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hidetaka Higashino, Koichi Mizuno, Hideaki Adachi, Kentaro Setsune, Akira Enokihara, Shinichiro Hatta, Kiyotaka Wasa, Shigemi Kohiki, Tomoaki Matsushima
  • Patent number: 4980339
    Abstract: A superconductor structure of very high performance is realized by forming a crystalline coating on a substrate of semiconductor, etc. and epitaxially depositing a crystalline superconductor film of good quality on this crystalline coating. Especially, CaF.sub.2 crystal and ZrO.sub.2 crystal of CaF.sub.2 crystal structure have latice constants which match well with the substrate such as Si, GaAs, etc. and the superconductor. The crystalline coating may be a perovskite material such as BaTiO.sub.3 when the superconductor is a perovskite material.
    Type: Grant
    Filed: July 25, 1988
    Date of Patent: December 25, 1990
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kentaro Setsune, Takeshi Kamada, Hideaki Adachi, Kiyotaka Wasa, Takashi Hirao, Osamu Yamazaki, Hidetaka Higashino
  • Patent number: 4844785
    Abstract: A diamond-like hard carbon film is formed on a substrate by impinging particles of carbon onto a surface of the substrate, bombarding the surface of the substrate with accelerated particles of inert gas or particles of carbon together with hydrogen in a direction not more than 10 degrees out of parallel to the surface so that the particles of carbon aggregate on the surface, at room temperature.
    Type: Grant
    Filed: May 20, 1987
    Date of Patent: July 4, 1989
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Makoto Kitabatake, Kiyotaka Wasa
  • Patent number: 4796982
    Abstract: An optical switch comprising a transparent prism having a light input surface and a light output surface, and a reflective control layer having a refractive index higher than that of said prism and a thickness not smaller than the wavelength of the light applied to the optical valve. The reflective control layer is constituted by a thin film of electrooptical material or a thin film of a heat-sensitive optical material. When the reflective control layer is made of an electrooptical material, the optical valve can selectively reflect or transmit the light by controlling the electric field applied to the reflective control layer. When the heat-sensitive material is used as the material of the reflective control layer, a similar switching function can be attained by controlling an electric current supplied to a heat generating member attached to the reflective control layer.
    Type: Grant
    Filed: July 6, 1984
    Date of Patent: January 10, 1989
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Makoto Kitabatake, Kentaro Setsune, Kiyotaka Wasa
  • Patent number: 4770923
    Abstract: An inorganic protection film (12) such as of silicon nitride for protecting humidity-sensitive functional devices (16) on the substrate from water molecules (15) is formed on an organic substrate (11) such as one made of polycarbonate plastic material, with a soft buffer interface film (13) between the substrate and the protection film, and the buffer film releases stress due to the difference of thermal expansion coefficients of the organic substrate and the protection film.
    Type: Grant
    Filed: November 20, 1985
    Date of Patent: September 13, 1988
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kiyotaka Wasa, Takashi Hirao, Atsuo Nishikawa, Seiji Nishino, Takeo Ohta
  • Patent number: 4715680
    Abstract: An optical switch usable for an optical circuit adapted to be operated by utilizing the electro-optical effect inherent therein. A pair of electrodes are arranged in spaced relation on an optical wave guide which is branched to branch optical wave guides and transmission of light beams is controlled by applying a certain voltage to the electrodes. Both the optical wave guide and the branch optical wave guides are made of electro-optical material. Specifically, the optical wave guides are constituted by a layer of PLZT ((Pb, La) (Zr, Ti) O.sub.3) based thin film which is formed by epitaxial growth on a base plate located on the C-plane of sapphire (.alpha.-alumina). The switch is effective for controlling the transmission of light beams.
    Type: Grant
    Filed: October 5, 1984
    Date of Patent: December 29, 1987
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Takao Kawaguchi, Hideaki Adachi, Kentaro Setsune, Kenzo Ohji, Kiyotaka Wasa
  • Patent number: 4610894
    Abstract: In a method of manufacturing a surface-acoustic-wave device composed of, at least, a substrate through which a surface acoustic wave is propagated, the propagation velocity of the surface acoustic wave is adjusted by applying light directly to the surface of the substrate constituting the device or through a thin film of asymmetric lattice configuration deposited thereon by sputtering, the thin film having a thickness not exceeding a value of 0.03 times as large as the wavelength of the surface acoustic wave propagated through the substrate.
    Type: Grant
    Filed: June 19, 1984
    Date of Patent: September 9, 1986
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kentaro Setsune, Osamu Yamazaki, Kiyotaka Wasa, Kazuo Tazuke
  • Patent number: 4553099
    Abstract: An electrostatic voltage sensor which includes a surface acoustic wave propagating medium and transmitting and receiving transducers coupled to the medium. The voltage sensor is provided with a separate voltage collecting member different from the electrode for applying a voltage or electric field, and the voltage obtained in the voltage collecting member is varied by a predetermined frequency for being applied to the electrode so as to detect external voltage by the variation component of the oscillating frequency.
    Type: Grant
    Filed: March 8, 1982
    Date of Patent: November 12, 1985
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yukio Kasahara, Ritsuo Inaba, Kiyotaka Wasa
  • Patent number: 4535376
    Abstract: A magnetic head includes at least a core for constituting a magnetic circuit and a magnetic gap formed in the core. The core comprises an amorphous magnetic metallic film formed on a non-magnetic high-resistance substrate so that one of the end faces of the non-magnetic high-resistance substrate and the amorphous magnetic metallic film may be brought into contact with a magnetic recording medium.
    Type: Grant
    Filed: March 15, 1982
    Date of Patent: August 13, 1985
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Noboru Nomura, Eiichi Hirota, Kiyotaka Wasa
  • Patent number: 4510443
    Abstract: A voltage measuring device includes a surface acoustic wave propagating medium and transmitting and receiving transducers coupled to the medium. An electrode that receives an unknown voltage is applied to the medium for effecting, when the unknown voltage is supplied, a frequency change in the acoustic wave propagating through the medium. A detector is provided for detecting the frequency change which is an indication of voltage supplied to the electrode.
    Type: Grant
    Filed: May 11, 1983
    Date of Patent: April 9, 1985
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Ritsuo Inaba, Kiyotaka Wasa
  • Patent number: 4501987
    Abstract: A surface acoustic wave transducer has a multilayered substrate which is made of a nonpiezoelectric plate which has a surface which is coated with a piezoelectric film, and has an interdigital electrode which is disposed on or under the surface of the piezoelectric film. The interdigital electrode has a split structure and the phase velocity of the surface acoustic wave of the piezoelectric film is smaller than that of the nonpiezoelectric plate.
    Type: Grant
    Filed: December 3, 1981
    Date of Patent: February 26, 1985
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Tsuneo Mitsuyu, Shusuke Ono, Ritsuo Inaba, Kiyotaka Wasa
  • Patent number: 4458346
    Abstract: A pickup stylus comprises a diamond stylus body having a rough surface and a conductive coating deposited onto said rough surface. The rough surface is made by ion bombardment process.The pickup stylus is useful for information playback in video and/or audio disc system.
    Type: Grant
    Filed: November 9, 1981
    Date of Patent: July 3, 1984
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Tsuneo Mitsuyu, Hisamitsu Maeda, Kiyotaka Wasa
  • Patent number: 4428909
    Abstract: The present invention relates to an environmental condition sensor which is used to detect temperature etc., which sensor comprises an environmental condition sensor proper (1, 3,or 7), and a gas permeable structure (2 or 5) comprising .gamma.-MnO.sub.2, (Zn--Mn--FeO.sub.x) , and mAl.sub.2 O.sub.3.nCaO as the main composition thereof or an enamel layer (9) comprising .gamma.-MnO.sub.2, (Zn--Mn--FeOx), (.alpha.-Al.sub.2 O.sub.3.zeorite), and frit as the main composition thereof, which structure or layer surrounds the environmental condition sensor proper, so that carbon in oily smake and uncombustion gas striking the structure burns to prevent the oily smake and carbon from adhering to the environmental condition sensor proper (1, 3 or 7), whereby the degradation of the characteristics of the environmental condition sensor proper is avoided.
    Type: Grant
    Filed: August 19, 1981
    Date of Patent: January 31, 1984
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Tomohiro Yashiki, Fumio Hosomi, Yasuo Wakahata, Atsushi Nishino, Kiyotaka Wasa, Masazumi Katase
  • Patent number: 4363990
    Abstract: A surface acoustic wave transducer having a piezoelectric thin film, interdigital electrodes disposed on one side surface of said piezoelectric thin film and an apodized counter electrode disposed on the opposite-side surface of said piezoelectric thin film. The outline of the apodized counter electrode is composed of parallel edges parallel to fingers of the interdigital electrode and perpendicular edges perpendicular to the fingers. The parallel edges are positioned in gaps between the fingers, so as not to lie over the fingers. Such structure remarkably reduces the deviation of characteristics of the transducer due to the incomplete alignment of the counter electrode with the interdigital electrode.
    Type: Grant
    Filed: December 3, 1980
    Date of Patent: December 14, 1982
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Osamu Yamazaki, Junichi Inohara, Kazuo Tazuke, Kiyotaka Wasa
  • Patent number: 4354130
    Abstract: This invention provides a surface acoustic wave device which comprises a multi-layered substrate. The multi-layered substrate comprises at least a piezoelectric zinc oxide layer, an intermediate silicon oxide layer and an .alpha.-Al.sub.2 O.sub.3 base made of a single crystal havine an (0112) crystallographic plane or an equivalent crystallographic plane. This surface acoustic wave device is operable at ultra-high frequency.
    Type: Grant
    Filed: December 5, 1980
    Date of Patent: October 12, 1982
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shusuke Ono, Tsuneo Mitsuyu, Osamu Yamazaki, Kiyotaka Wasa
  • Patent number: 4342012
    Abstract: A surface acoustic wave device in which an X-cut LiTaO.sub.3 single crystal substrate has its one major surface coated with a SiO.sub.2 film and the direction of propagation of surface acoustic waves is selected between 80.degree. and 180.degree. measured from the Y-axis toward the Z-axis. The surface acoustic wave devices in accordance with the present invention has an extremely low temperature coefficient change and a high electro-mechanical coupling coefficient, exhibits a higher degree of both short- and long-term stability, and can suppress the generation of unwanted waves to a minimum or negligible degree.
    Type: Grant
    Filed: February 18, 1981
    Date of Patent: July 27, 1982
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Ritsuo Inaba, Kiyotaka Wasa
  • Patent number: 4315960
    Abstract: A method of making a thin film by vapor depositing a source material onto a substrate, in which a mask plate is provided between the source material and the substrate at a location such that d<5l in which d denotes the distance between the mask plate and the substrate and l denotes the mean free path of the evaporated particles, or s<l in which s denotes the distance between the mask plate and the source material. The mask plate moves relative to the substrate and/or the source material during the deposition. Configuration of the mask plate is designed so as to equalize deposition rates through the above-mentioned movement.
    Type: Grant
    Filed: May 28, 1980
    Date of Patent: February 16, 1982
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kenzo Ohji, Osamu Yamazaki, Kiyotaka Wasa, Shigeru Hayakawa
  • Patent number: 4288307
    Abstract: In a method of making a magnetic gap by depositing a glass layer on a surface of magnetic head core materials by cathodic sputtering of a glass target and cementing a pair of the resulting glass-coated magnetic head core materials, the improvements constituted by monitoring the thickness of the sputtered glass layer by an interference of a light beam guided onto a surface of the magnetic head core materials during the deposition and using a sputtering apparatus having a sample holder beside the target for securing the magnetic core materials and a mask plate for achieving uniform thickness of the sputtered glass layer.The method makes possible production of magnetic heads having excellent electromagnetic conversion characteristics with high accuracy.
    Type: Grant
    Filed: February 19, 1980
    Date of Patent: September 8, 1981
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kiyotaka Wasa, Takao Tohda, Kazuo Yokoyama, Eiichi Hirota, Shigeru Hayakawa
  • Patent number: 4276535
    Abstract: A high performance, precision thermistor comprising a temperature sensitive resistor in the form of a thin, uniform layer of silicon carbide, deposited on a base support by sputtering, and electrode means attached to the temperature sensitive resistor in electrically connected relation to the temperature sensitive resistor.
    Type: Grant
    Filed: February 27, 1980
    Date of Patent: June 30, 1981
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Tsuneo Mitsuyu, Kiyotaka Wasa, Shigeru Hayakawa
  • Patent number: 4236095
    Abstract: A surface acoustic wave device comprising a piezoelectric substrate which comprises an .alpha.-alumina layer as a base region and a zinc oxide layer as a surface region formed on the .alpha.-alumina layer. Preferably the two layers are each made of a single crystal, and the thickness of the zinc oxide layer and an angle between a crystallographic axis of the zinc oxide single crystal and the direction of wave propagation are determined so as to fall within optimum ranges, respectively. This device features an increased phase velocity and an augmented value for the electromechanical coupling coefficient and accordingly is of use at very-high to ultra-high frequencies.
    Type: Grant
    Filed: April 17, 1979
    Date of Patent: November 25, 1980
    Assignee: Matsushita Electric Industrial Company, Limited
    Inventors: Shusuke Ono, Tsuneo Mitsuyu, Osamu Yamazaki, Kiyotaka Wasa