Patents by Inventor Klaus-Guenter Oppermann

Klaus-Guenter Oppermann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090265903
    Abstract: A method for manufacturing a coupled resonator device includes forming a first BAW-device on a first substrate, forming a second BAW-device on a second substrate, and bonding the first and the second BAW-device such that the bonded first and second BAW-device are sandwiched between the first and second substrate.
    Type: Application
    Filed: April 28, 2008
    Publication date: October 29, 2009
    Inventors: Martin Handtmann, Klaus-Guenter Oppermann, Martin Fritz
  • Publication number: 20090179333
    Abstract: An integrated circuit that comprises a substrate and a structured layer on the substrate. The structured layer comprises an opening to the substrate, a first field and a second field on the substrate, wherein the first field and the second field, at least in part, overlap with the opening. The integrated circuit further comprises a first material in the area of the first field and a second material in the area of the second field. The first material impedes a wetting by a solder material, and the second provides a wetting by the solder material.
    Type: Application
    Filed: January 11, 2008
    Publication date: July 16, 2009
    Inventors: Alfred Martin, Barbara Hasler, Martin Franosch, Klaus-Guenter Oppermann
  • Publication number: 20080224297
    Abstract: An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.
    Type: Application
    Filed: March 15, 2007
    Publication date: September 18, 2008
    Applicant: Infineon Technologies AG
    Inventors: Klaus-Guenter Oppermann, Martin Franosch, Martin Handtmann
  • Publication number: 20080197423
    Abstract: A device comprises a first means for separating a conductive layer from a semiconductor substrate and a second means for reducing a voltage dependent capacitive coupling between the conductive layer and the semiconductor substrate.
    Type: Application
    Filed: February 15, 2007
    Publication date: August 21, 2008
    Applicant: Infineon Technologies AG
    Inventor: Klaus-Guenter Oppermann
  • Publication number: 20080020330
    Abstract: A method for developing a photoresist includes applying a first developer to the photoresist to remove non-cross-linked areas of the photoresist, and applying a second developer to the photoresist to remove remaining non-cross-linked areas of the photoresist, wherein the first developer and the second developer differ in their compositions.
    Type: Application
    Filed: June 29, 2007
    Publication date: January 24, 2008
    Inventors: Klaus-Guenter Oppermann, Martin Franosch
  • Patent number: 7288435
    Abstract: In a method for producing a cover for a region of a substrate, first a frame structure is produced in the region of the substrate, and then a cap structure is attached to the frame structure so that the region under the cap structure is covered. Thus, sensitive devices may be protected easily and at low cost from external influences and particularly from a casting material for casting the entire packaged device, which results when a diced chip is cast.
    Type: Grant
    Filed: August 18, 2004
    Date of Patent: October 30, 2007
    Assignee: Infineon Technologies AG
    Inventors: Robert Aigner, Martin Franosch, Andreas Meckes, Klaus-Guenter Oppermann, Marc Strasser
  • Patent number: 7234237
    Abstract: In a method for producing a protective cover for a device formed in a substrate, at first a sacrificial structure is produced on the substrate, wherein the sacrificial structure comprises a first portion covering a first area of the substrate including the device and a second portion extending from the first portion into a second area of the substrate including no device. Then a first cover layer is deposited that encloses the sacrificial structure such that the second portion of the sacrificial structure is at least partially exposed. Then the sacrificial structure is removed, and the structure formed by the removal of the sacrificial structure is closed.
    Type: Grant
    Filed: April 9, 2004
    Date of Patent: June 26, 2007
    Assignee: Infineon Technologies AG
    Inventors: Martin Franosch, Andreas Meckes, Klaus-Günter Oppermann
  • Publication number: 20060240643
    Abstract: A method for producing a polymer structure on a patterning region of a substrate surface includes the steps of depositing an adhesion layer having a first polymer material onto the substrate surface, patterning the adhesion layer such that the first polymer material of the adhesion layer is removed in a first region and the first polymer material of the adhesion layer remains in a second region including the patterning region, depositing a polymer layer of a second polymer material onto the substrate surface and the adhesion layer and patterning the polymer layer such that the polymer structure forms in the second region.
    Type: Application
    Filed: March 22, 2006
    Publication date: October 26, 2006
    Applicant: Infineon Technologies AG
    Inventors: Martin Franosch, Andreas Meckes, Klaus-Guenter Oppermann
  • Publication number: 20060191868
    Abstract: In the inventive method for the wet-chemical removal of a sacrificial material in a material structure, there is first provided the material structure, wherein the material structure has a treatment region with the sacrificial material accessible through an opening. Subsequently, the sacrificial material is brought into contact with a wet-chemical treatment agent through the opening for the removal of the sacrificial material, wherein a mechanical vibration is generated in the wet-chemical treatment agent or in the wet-chemical treatment agent and the material structure during the contacting of the sacrificial material with the wet-chemical treatment agent.
    Type: Application
    Filed: February 2, 2006
    Publication date: August 31, 2006
    Applicant: Infineon Technologies AG
    Inventors: Martin Franosch, Andreas Meckes, Klaus-Guenter Oppermann
  • Publication number: 20060183325
    Abstract: A lift-off method includes providing a material structure, applying photoresist on a surface of the material structure, partially exposing the photoresist, baking the material structure with the partially exposed photoresist applied on the surface of the material structure, developing the photoresist with an organic, polar developer, so that the photoresist is removed in a first region of the surface, and the photoresist remains in the second region of the surface, applying coating material on the surface of the material structure and the remaining photoresist, and removing the photoresist.
    Type: Application
    Filed: January 12, 2006
    Publication date: August 17, 2006
    Applicant: Infineon Technologies AG
    Inventors: Martin Franosch, Klaus-Guenter Oppermann
  • Patent number: 6955950
    Abstract: In a method for generating a protective cover for a device, where a substrate is provided, which comprises the device, first, a sacrificial pattern is generated on the substrate. The sacrificial pattern covers at least an area of the substrate, which comprises the device. Then, a polymer layer is deposited, which comprises at least on sacrificial pattern. Then, an opening will be formed in the polymer layer to expose a portion of the sacrificial pattern. Then, the sacrificial pattern will be removed and the formed opening in the polymer layer is closed.
    Type: Grant
    Filed: July 9, 2004
    Date of Patent: October 18, 2005
    Assignee: Infineon Technologies AG
    Inventors: Robert Aigner, Martin Franosch, Andreas Meckes, Klaus-Günter Oppermann, Marc Strasser
  • Patent number: 6939734
    Abstract: In a method for producing a protective cover for a device which is formed in a substrate, a first cover layer is initially deposited on the substrate, the first cover layer covering an area of the substrate which includes the device. Subsequently, an opening is formed in the first cover layer, the opening exposing that area of the substrate which includes the device. Then the opening formed in the first cover layer is filled up using a filling material. Subsequently, a second cover layer is deposited on the first cover layer and in the opening of the first cover layer which is filled up with the filling material. Thereafter, an opening is formed in the second cover layer to expose an area of the filling material. Finally, the filling material covering that area of the substrate which includes the device is removed, and the opening formed in the second cover layer is closed.
    Type: Grant
    Filed: April 8, 2004
    Date of Patent: September 6, 2005
    Assignee: Infineon Technologies AG
    Inventors: Martin Franosch, Andreas Meckes, Klaus-Günter Oppermann
  • Publication number: 20050079686
    Abstract: In a method for producing a cover for a region of a substrate, first a frame structure is produced in the region of the substrate, and then a cap structure is attached to the frame structure so that the region under the cap structure is covered. Thus, sensitive devices may be protected easily and at low cost from external influences and particularly from a casting material for casting the entire packaged device, which results when a diced chip is cast.
    Type: Application
    Filed: August 18, 2004
    Publication date: April 14, 2005
    Applicant: Infineon Technologies AG
    Inventors: Robert Aigner, Martin Franosch, Andreas Meckes, Klaus-Guenter Oppermann, Marc Strasser
  • Patent number: 6762455
    Abstract: A semiconductor component includes a semiconductor body of a first conductivity type which accommodates a space charge region. Semiconductor regions of a second conductivity type are disposed in at least one plane extending essentially perpendicularly to a connecting line extending between two electrodes. A cell array is disposed under one of the electrodes in the semiconductor body. At least some of the semiconductor regions of the second conductivity type are connected to the cell array via filiform semiconductor zones of the second conductivity type in order to expedite switching processes. A method for fabricating such a semiconductor component is also provided.
    Type: Grant
    Filed: March 11, 2002
    Date of Patent: July 13, 2004
    Assignee: Infineon Technologies AG
    Inventors: Klaus-Günter Oppermann, Jenö Tihanyi
  • Patent number: 6724058
    Abstract: A recess is produced in a material layer by creating at least a first and a second structure in various steps. The layers define each other laterally and extend to the bottom of the recess. The first structure and the second structure are so narrow that they can be made by creating conformally produced layers that have an independent thickness and are smaller than the depth of the recess. The conformally produced layers are formed in an appropriate deposition process. A covering structure can be produced on top of the first and second structure. An opening can be made in the covering structure, through which the first structure and the second structure can be removed in an etching step.
    Type: Grant
    Filed: January 8, 2001
    Date of Patent: April 20, 2004
    Assignee: Infineon Technologies AG
    Inventors: Robert Aigner, Klaus-Günter Oppermann
  • Patent number: 6556418
    Abstract: A micromechanical component placed on a substrate face includes at least one cell. A counter-electrode of a cell capacitor is placed under a cavity. The counter-electrode can be made from a first part of a lower conductive layer. An optionally circular membrane used as an electrode of the capacitor is placed above the cavity. The membrane is homogeneous, has a substantially uniform thickness, and can be part of an upper conductive layer preferably supported by a second part of the lower conductive layer. A caustic channel used to remove the sacrificial coating in order to form the cavity is laterally connected thereto. The channel has a vertical dimension equal to the vertical dimension of the cavity. A closure is adjacent to the channel and disposed outside the membrane. The component can be used as a pressure sensor, and can have several cells each adjacent to six other cells. A process for fabricating a micromechanical component is also provided.
    Type: Grant
    Filed: February 28, 2001
    Date of Patent: April 29, 2003
    Assignee: Infineon Technologies AG
    Inventors: Robert Aigner, Hergen Kapels, Klaus-Günter Oppermann
  • Patent number: 6406933
    Abstract: Etching openings are provided in a membrane above an etched-out cavity, only at a distance of at most one tenth of the diameter of the member away from the edge of the cavity. For production, a poly layer is applied to a sacrificial layer composed of SiO2 and is provided with rows of etching holes, through which channels are etched out in the sacrificial layer. The poly layer is oxidized and is made smooth by means of a planarization layer. Etching holes are produced in the edge region of the membrane layer. The sacrificial layer is removed over the entire area of the cavity which is to be produced, with the etching medium propagating sufficiently quickly through the channels.
    Type: Grant
    Filed: November 8, 2000
    Date of Patent: June 18, 2002
    Assignee: Infineon Technologies AG
    Inventors: Robert Aigner, Klaus-Günter Oppermann, Hergen Kapels
  • Patent number: 6401544
    Abstract: A method is disclosed for producing a micromechanical component. The micromechanical component has sensor holes, wherein at least one component protective layer and/or a spacer coating is applied on the component before separating the wafer into chips. The component protective layer sealingly covers at least the walls of the holes extending parallel to the surface of the wafer and perpendicular to the surface of the wafer and the spacer coating sealingly covers at least the walls of the holes extending parallel to the surface of the wafer.
    Type: Grant
    Filed: February 27, 2001
    Date of Patent: June 11, 2002
    Assignee: Infineon Technologies AG
    Inventors: Robert Aigner, Christofer Hierold, Hergen Kapels, Stefan Kolb, Dieter Maier-Schneider, Klaus-Günter Oppermann, Hans-Jörg Timme, Thomas Scheiter, Wolfgang Werner
  • Patent number: 6373115
    Abstract: A micromechanical structure, such as a sensor, includes a substrate, a diaphragm, a cavity, a sacrificial layer and a terminating structure. The terminating structure is cut away in the region of the diaphragm in such a way that a media opening is located above the diaphragm. The diameter of the cavity is smaller over the entire circumference of the cavity than the diameter of the opening. A method for manufacturing the micromechanical structure is also provided.
    Type: Grant
    Filed: August 27, 1999
    Date of Patent: April 16, 2002
    Assignee: Siemens Aktiengesellschaft
    Inventors: Stefan Kolb, Dieter Maier-Schneider, Klaus-Günter Oppermann, Hans-Jörg Timme
  • Patent number: 6346429
    Abstract: An integrated sensor is fabricated by etching recesses or depressions into the top side of a semiconductor body and by fabricating sensor components in the recesses or depressions. The sensor components are lowered in the recesses or depressions by approximately half of their height. Electronic components are fabricated in the remaining regions of the top side of the semiconductor body. The remaining regions may be covered with a protective layer if the recesses or depressions are fabricated after the electronic components.
    Type: Grant
    Filed: August 28, 2000
    Date of Patent: February 12, 2002
    Assignee: Infineon Technologies AG
    Inventors: Robert Aigner, Hergen Kapels, Andreas Meckes, Klaus-Günter Oppermann