Abstract: An integrated circuit arrangement includes an IGBT, provided with a secondary contact connected with the drift area, and a diode connected between the secondary contact and the anode of the IGBT. The cathode of the diode is connected with the anode of the IGBT and the anode of the diode is connected with the secondary contact of the IGBT. In this way the pn-junction of the IGBT, formed through the drift area and the channel area, can be used as an internal free-running diode of the IGBT.

Abstract: Insulating trenches (2) in the silicon layer of an SOI substrate that extend onto the insulating layer of the SOI substrate define silicon islands (3). At least one of the silicon islands (3) is an interconnect segment (3a) by a diffusion zone that is arranged at the walls of the surrounding trench (2) and that is formed by drive-out from an occupation layer introduced into the trench. The interconnect segment (3a) is suitable as an underpass for crossing interconnects (6a,6b) or as an additional metallization level.

Abstract: In a bipolar power component, for example an IGBT, having an emitter structure and a drift zone of the opposite conductivity type, the emitter structure is provided with a first contact and the drift zone is provided with a second contact. The first contact and the second contact are connected to a drivable resistor circuit such that, dependent on a control signal at the resistor circuit, the current through the power component optionally flows via the first contact and/or via the second contact to a third contact of the resistor circuit.

Abstract: For manufacturing vertical MOS transistors, doped regions for a drain (11), well (3), and source (4) are formed in a vertical sequence in a substrate (1). Using a Si.sub.3 N.sub.4 mask (5), trenches (6) are etched perpendicular to the surface of the substrate (1). The trenches isolate the source (4) and well (3) structure, and are filled with doped polysilicon and are closed in an upper region with an insulation structure (8) in self-aligned fashion on the basis of local oxidation. The insulation structure (8) projects laterally beyond the trenches (6). Using the insulation structure (8) as an etching mask, via contact holes (9), that are provided with a metallization for contacting the source (4) and the well (3), are opened down into the well (3) between neighboring trenches (6).

Abstract: An emitter of a thyristor is divided into a plurality of emitter regions. An electrode is provided next to each of these regions, and a turn-off current path proceeds via this electrode from the base adjoining the emitter region over a first field effect transistor to a main terminal of the thyristor. Every emitter region is also connected to this main terminal via a second field effect transistor which is integrated into the semiconductor body of the thyristor, or is manufactured in thin-film technology.