Abstract: One example discloses a sensor calibration circuit, including: a controller configured to transmit a first modulation signal to the sensor and receive a first output signal from the sensor in response; wherein the controller configured to transmit a second modulation signal to the sensor and receive a second output signal from the sensor in response; and wherein the controller is configured to calibrate the sensor based on the first and second modulation signals and the first and second output signals.

Abstract: A sensor includes first and second magnetoresistive sensor elements configured to produce respective first and second output signals in response to an external magnetic field. The first and second magnetoresistive sensor elements form a gradient unit, each of the magnetoresistive sensor elements includes a sense layer having a vortex magnetization pattern. A processing circuit is coupled to the sensor elements and is configured to produce a differential output signal as a difference between the first and second output signals of the first and second magnetoresistive sensor elements of the gradient unit. The system includes an encoder that produces the external magnetic field and the sensor having one or more gradient units, in which the gradient units may be arranged in a second-order gradient sensing configuration.

Abstract: A method includes performing an ion beam etching process on a tunnel magnetoresistance (TMR) stack to remove material portions of a first magnetic layer and a tunnel barrier layer of the TMR stack. The ion beam etching process stops at a top surface of a second magnetic layer of the TMR stack. A protective layer is deposited over the TMR stack. Another etch process is performed to remove the protective layer such that a portion of the second magnetic layer is exposed from the protective layer and a spacer is formed from a remaining portion of the protective layer. The spacer surrounds sidewalls of the first magnetic layer and the tunnel barrier layer. The portion of the second magnetic layer exposed from the protective layer is removed so that a TMR sensor element remains, where the TMR sensor element includes a bottom magnet, a top magnet, and a tunnel junction.

Abstract: A method includes performing an ion beam etching process on a tunnel magnetoresistance (TMR) stack to remove material portions of a first magnetic layer and a tunnel barrier layer of the TMR stack. The ion beam etching process stops at a top surface of a second magnetic layer of the TMR stack. A protective layer is deposited over the TMR stack. Another etch process is performed to remove the protective layer such that a portion of the second magnetic layer is exposed from the protective layer and a spacer is formed from a remaining portion of the protective layer. The spacer surrounds sidewalls of the first magnetic layer and the tunnel barrier layer. The portion of the second magnetic layer exposed from the protective layer is removed so that a TMR sensor element remains, where the TMR sensor element includes a bottom magnet, a top magnet, and a tunnel junction.

Abstract: A method includes performing an ion beam etching process on a tunnel magnetoresistance (TMR) stack to remove material portions of a first magnetic layer and a tunnel barrier layer of the TMR stack. The ion beam etching process stops at a top surface of a second magnetic layer of the TMR stack. A protective layer is deposited over the TMR stack. Another etch process is performed to remove the protective layer such that a portion of the second magnetic layer is exposed from the protective layer and a spacer is formed from a remaining portion of the protective layer. The spacer surrounds sidewalls of the first magnetic layer and the tunnel barrier layer. The portion of the second magnetic layer exposed from the protective layer is removed so that a TMR sensor element remains, where the TMR sensor element includes a bottom magnet, a top magnet, and a tunnel junction.

Abstract: Disclosed is an integrated circuit, comprising a semiconductor substrate carrying a plurality of circuit elements; and a pressure sensor including a cavity on said semiconductor substrate, said cavity comprising a pair of electrodes laterally separated from each other; and a flexible membrane over and spatially separated from said electrodes such that said membrane interferes with a fringe field between said electrodes, said membrane comprising at least one aperture. A method of manufacturing such an IC is also disclosed.

Abstract: A magnetic field sensor is disclosed for providing an output signal in response to an external magnetic field. The sensor comprises a primary magnetic field transducer for producing a primary signal in response to the external magnetic field and having a first magnetic field saturation characteristic; a secondary magnetic field transducer for producing a secondary signal in response to the external magnetic field and having a second magnetic field saturation characteristic. The first magnetic field saturation characteristic is different from the second magnetic field saturation characteristic. The sensor is configured to use the secondary signal to correct for errors in the output signal arising from saturation of the primary transducer.

Abstract: A MEMS electrostatic actuator comprises first and second opposing electrode arrangements, wherein at least one of the electrode arrangements is movable. A dielectric material (24) is adjacent the one of the electrode arrangements (22). The second electrode arrangement is patterned such that it includes electrode areas (26) and spaces adjacent the electrode areas, wherein the dielectric material (24) extends at least partially in or over the spaces. The invention uses a multitude of electrode portions as one plate. The electric field lines thus form clusters between the individual electrode portions and the opposing electrode. This arrangement provides an extended range of continuous actuation and tunability.

Abstract: A differential magnetic field sensor system (10) is provided, in which offset cancelling for differential semiconductor structures in magnetic field sensors arranged close to each other is realized. The system (10) comprises a first, a second and a third magnetic field sensor (100, 200, 300), each of which is layouted substantially identically and comprises a, preferably silicon-on-insulator (SOI), surface layer portion (102) provided as a surface portion on a, preferably SOI, wafer and having a surface (104).

Abstract: A magnetic field sensor is disclosed for providing an output signal in response to an external magnetic field. The sensor comprises a primary magnetic field transducer for producing a primary signal in response to the external magnetic field and having a first magnetic field saturation characteristic; a secondary magnetic field transducer for producing a secondary signal in response to the external magnetic field and having a second magnetic field saturation characteristic. The first magnetic field saturation characteristic is different from the second magnetic field saturation characteristic. The sensor is configured to use the secondary signal to correct for errors in the output signal arising from saturation of the primary transducer.

Abstract: A capacitive MEMS structure comprising first and second opposing capacitor electrode arrangements, wherein at least one of the electrode arrangements is movable, and a dielectric material located adjacent to the second electrode arrangement, wherein the second electrode arrangement is patterned such that it includes electrode areas and spaces adjacent to the electrode areas, and wherein the dielectric material extends at least partially in or over the spaces.

Abstract: Disclosed is an integrated circuit, comprising a semiconductor substrate carrying a plurality of circuit elements; and a pressure sensor including a cavity on said semiconductor substrate, said cavity comprising a pair of electrodes laterally separated from each other; and a flexible membrane over and spatially separated from said electrodes such that said membrane interferes with a fringe field between said electrodes, said membrane comprising at least one aperture. A method of manufacturing such an IC is also disclosed.

Abstract: Disclosed is an integrated circuit, comprising a semiconductor substrate carrying a plurality of circuit elements; and a pressure sensor including a cavity on said semiconductor substrate, said cavity comprising a pair of electrodes laterally separated from each other; and a flexible membrane over and spatially separated from said electrodes such that said membrane interferes with a fringe field between said electrodes, said membrane comprising at least one aperture. A method of manufacturing such an IC is also disclosed.

Abstract: A MEMS pressure sensor wherein at least one of the electrode arrangements comprises an inner electrode and an outer electrode arranged around the inner electrode. The capacitances associated with the inner electrode and the outer electrode are independently measured and can be differentially measured. This arrangement enables various different read out schemes to be implemented and also enables improved compensation for variations between devices or changes in device characteristics over time.

Abstract: Disclosed is an integrated circuit, comprising a semiconductor substrate carrying a plurality of circuit elements; and a pressure sensor including a cavity on said semiconductor substrate, said cavity comprising a pair of electrodes laterally separated from each other; and a flexible membrane over and spatially separated from said electrodes such that said membrane interferes with a fringe field between said electrodes, said membrane comprising at least one aperture. A method of manufacturing such an IC is also disclosed.

Abstract: An ESD protection circuit comprises a series connection of at least two protection components between a signal line to be protected and a return line (e.g. ground), comprising a first protection component connected to the signal line and a second protection component connected to the ground line. They are connected with opposite polarity so that when one conducts in forward direction the other conducts in reverse breakdown mode. A bias voltage source connects to the junction between the two protection components through a bias impedance. The use of the bias voltage enables the signal distortions resulting from the ESD protection circuit to be reduced.

Abstract: Substrate material is oxidized around side walls of a set of channels. A shielding structure means there is more oxide growth at the top than the bottom with the result that the non-oxidized substrate material area between the channels forms a tapered shape with a pointed tip at the top. These pointed substrate areas are then used to form cathodes.

Abstract: A read out circuit for a sensor uses a feedback loop to bias the sensor to a desired operating point, such as the maximal possible sensitivity, but without the problem of an instable sensor position as known for the conventional read-out with constant charge. The reference bias to which the circuit is controlled is also varied using feedback control, but with a slower response than the main bias control feedback loop.

Abstract: An RF device includes a substrate and a series circuit of a tunable RF component and a DC blocking capacitor. The series circuit is arranged on the substrate and couples an RF signal terminal to a fixed voltage terminal that is electrically isolated from the RF signal terminal. The tunable RF component is coupled to the RF signal terminal, the DC blocking capacitor is coupled to the fixed voltage terminal and a driver terminal is coupled to the tunable RF component.

Abstract: Disclosed is an integrated circuit (100), comprising a semiconductor substrate (110) carrying a plurality of circuit elements; and a pressure sensor including a cavity (140) on said semiconductor substrate, said cavity comprising a pair of electrodes (120, 122) laterally separated from each other; and a flexible membrane (130) over and spatially separated from said electrodes such that said membrane interferes with a fringe field between said electrodes, said membrane comprising at least one aperture (132). A method of manufacturing such an IC is also disclosed.