Abstract: The invention provides a method of forming an electric field gap device, such as a lateral field emission ESD protection structure, in which a cathode layer is formed between dielectric layers. Anode channels are formed and they are lined with a sacrificial dielectric layer. Conductive anode pillars are formed in the anode channels, and then the sacrificial dielectric layer is etched away in the vicinity of the anode pillars. The etching leaves a suspended portion of the cathode layer which defines a lateral gap to an adjacent anode pillar. This portion has a sharp end face defined by the corners of the cathode layer and the lateral gap can be defined accurately as it corresponds to the thickness of the sacrificial dielectric layer.

Abstract: A differential magnetic field sensor system (10) is provided, in which offset cancelling for differential semiconductor structures in magnetic field sensors arranged close to each other is realized. The system (10) comprises a first, a second and a third magnetic field sensor (100, 200, 300), each of which is layouted substantially identically and comprises a, preferably silicon-on-insulator (SOI), surface layer portion (102) provided as a surface portion on a, preferably SOI, wafer and having a surface (104).

Abstract: Embodiments of a method for forming a field emission diode for an electrostatic discharge device include forming a first electrode, a sacrificial layer, and a second electrode. The sacrificial layer separates the first and second electrodes. The method further includes forming a cavity between the first and second electrode by removing the sacrificial layer. The cavity separates the first and second electrodes. The method further includes depositing an electron emission material on at least one of the first and second electrodes through at least one access hole after formation of the first and second electrodes. The access hole is located remotely from a location of electron emission on the first and second electrode.

Abstract: Embodiments of a method for forming a field emission diode for an electrostatic discharge device include forming a first electrode, a sacrificial layer, and a second electrode. The sacrificial layer separates the first and second electrodes. The method further includes forming a cavity between the first and second electrode by removing the sacrificial layer. The cavity separates the first and second electrodes. The method further includes depositing an electron emission material on at least one of the first and second electrodes through at least one access hole after formation of the first and second electrodes. The access hole is located remotely from a location of electron emission on the first and second electrode.

Abstract: A capacitive MEMS structure comprising first and second opposing capacitor electrode arrangements, wherein at least one of the electrode arrangements is movable, and a dielectric material located adjacent to the second electrode arrangement, wherein the second electrode arrangement is patterned such that it includes electrode areas and spaces adjacent to the electrode areas, and wherein the dielectric material extends at least partially in or over the spaces.

Abstract: Substrate material is oxidised around side walls of a set of channels. A shielding structure means there is more oxide growth at the top than the bottom with the result that the non-oxidised substrate material area between the channels forms a tapered shape with a pointed tip at the top. These pointed substrate areas are then used to form cathodes.

Abstract: The invention provides a method of forming an electric field gap device, such as a lateral field emission ESD protection structure, in which a cathode layer is formed between dielectric layers. Anode channels are formed and they are lined with a sacrificial dielectric layer. Conductive anode pillars are formed in the anode channels, and then the sacrificial dielectric layer is etched away in the vicinity of the anode pillars. The etching leaves a suspended portion of the cathode layer which defines a lateral gap to an adjacent anode pillar. This portion has a sharp end face defined by the corners of the cathode layer and the lateral gap can be defined accurately as it corresponds to the thickness of the sacrificial dielectric layer.

Abstract: A MEMS device, such as a microphone, uses a fixed perforated plate. The fixed plate comprises an array of holes across the plate area. At least a set of the holes adjacent the outer periphery comprises a plurality of rows of elongate holes, the rows at different distances from the periphery. This design improves the mechanical robustness of the membrane and can additionally allow tuning of the mechanical behavior of the plate.

Abstract: A MEMS device, such as a microphone, uses a perforated plate. The plate comprises an array of holes across the plate area. The plate has an area formed as a grid of polygonal cells, wherein each cell comprises a line of material following a path around the polygon thereby defining an opening in the center. In one aspect, the line of material forms a path along each side of the polygon which forms a track which extends at least once inwardly from the polygon perimeter towards the center of the polygon and back outwardly to the polygon perimeter. This defines a meandering hexagon side wall, which functions as a local spring suspension.

Abstract: A MEMS tunable capacitor comprises first and second opposing capacitor electrodes, wherein the second capacitor electrode is movable by a MEMS switch to vary the capacitor dielectric spacing, and thereby tune the capacitance. A tunable dielectric material and a non-tunable dielectric material are in series between the first and second electrodes. The tunable dielectric material occupies a dimension gd of the electrode spacing, and the non-tunable dielectric material occupies a dimension g of the electrode spacing. A third electrode faces the movable second electrode for electrically controlling tunable dielectric material. A controller is adapted to vary the capacitor dielectric spacing for a first continuous range of adjustment of the capacitance of the MEMS capacitor, and to tune the dielectric material for a second continuous range of adjustment of the capacitance of the MEMS capacitor, thereby to provide a continuous analogue range of adjustment including the first and second ranges.

Abstract: The present invention relates to a piezoelectric bimorph switch, specifically a cantilever (single clamped beam) switch, which can be actively opened and closed. Piezoelectric bimorph switch are known from the prior art. Such a switch may be regarded as an actuator. Actuators are regarded as a subdivision of transducers. They are devices, which transform an input signal (mainly an electrical signal) into motion. Electrical motors, pneumatic actuators, hydraulic pistons, relays, comb drive, piezoelectric actuators, thermal bimorphs, Digital Micromirror Devices and electroactive polymers are some examples of such actuators. The switch of the invention comprises piezoelectric stack layers (121, 122), which form a symmetrical stack, wherein an electric field is always applied in the same direction as the poling direction of the piezoelectric layers.

Abstract: A high density capacitor 12, a method of manufacturing it, and applications of it are described. The capacitor 12 is an electrochemical capacitor using a metal ion accepting cathode 22 and a metal ion accepting anode 26 and a amorphous solid electrolyte 24 between. The cathode and anode may be of amorphous lithium ion intercalating material such as suitable transition metal oxides with multiple oxidation states.

Abstract: A MEMS manufacturing method and device in which a spacer layer is provided over a side wall of at least one opening in a structural layer which will define the movable MEMS element. The opening extends below the structural layer. The spacer layer forms a side wall portion over the side wall of the at least one opening and also extends below the level of the structural layer to form a contact area.

Abstract: The invention relates to electronic device having an operation temperature range, wherein the electronic device comprises a tunable capacitor (CST) comprising a first electrode (BE), a second electrode (TE), and a dielectric (FEL) arranged between the first electrode (BE) and the second electrode (TE). The dielectric (FEL) comprises dielectric material (FEL) having a value of a relative dielectric constant (?r) varying at least within the operation temperature range. The electronic device further comprises a temperature varying means (RES) being thermally coupled to the tunable capacitor for providing a temperature of the dielectric (FEL) causing a predetermined capacitance of the tunable capacitor (CST). The invention, which relies on the idea of varying temperature to vary a capacitance of a capacitor stack, provides an alternative tunable capacitor type for the known types.

Abstract: An ESD protection circuit comprises a series connection of at least two protection components between a signal line to be protected and a return line (e.g. ground), comprising a first protection component connected to the signal line and a second protection component connected to the ground line. They are connected with opposite polarity so that when one conducts in forward direction the other conducts in reverse breakdown mode. A bias voltage source connects to the junction between the two protection components through a bias impedance. The use of the bias voltage enables the signal distortions resulting from the ESD protection circuit to be reduced.

Abstract: A MEMS switch in which at least first, second and third signal lines are provided over the substrate, which each terminate at a connection region. A lower actuation electrode arrangement is over the substrate. A movable contact electrode is suspended over the connection regions for making or breaking electrical contact between at least two of the three connection regions and an upper actuation electrode provided over the lower actuation electrode. The use of three of more signal lines enables a symmetrical actuation force to be achieved or enables multiple switch functions to be implemented by the single movable electrode, or both.

Abstract: An RF device includes a substrate and a series circuit of a tunable RF component and a DC blocking capacitor. The series circuit is arranged on the substrate and couples an RF signal terminal to a fixed voltage terminal that is electrically isolated from the RF signal terminal. The tunable RF component is coupled to the RF signal terminal, the DC blocking capacitor is coupled to the fixed voltage terminal and a driver terminal is coupled to the tunable RF component.

Abstract: Disclosed is an integrated circuit (100), comprising a semiconductor substrate (110) carrying a plurality of circuit elements; and a pressure sensor including a cavity (140) on said semiconductor substrate, said cavity comprising a pair of electrodes (120, 122) laterally separated from each other; and a flexible membrane (130) over and spatially separated from said electrodes such that said membrane interferes with a fringe field between said electrodes, said membrane comprising at least one aperture (132). A method of manufacturing such an IC is also disclosed.

Abstract: A reconfigurable radio-frequency front-end 20 with an antenna 24 and a resonant circuit within a matching network 22. In order to provide for high tuning range with low cost and low size, a matching network 22 may comprise at least one electrically tunable passive solid-state dielectrical component 6 on a carrier substrate 2.

Abstract: A MEMS device, such as a microphone, uses a perforated plate. The plate comprises an array of holes across the plate area. The plate has an area formed as a grid of polygonal cells, wherein each cell comprises a line of material following a path around the polygon thereby defining an opening in the centre. In one aspect, the line of material forms a path along each side of the polygon which forms a track which extends at least once inwardly from the polygon perimeter towards the centre of the polygon and back outwardly to the polygon perimeter. This defines a meandering hexagon side wall, which functions as a local spring suspension.