Abstract: A field-effect transistor including a gate electrode, silicon layers and source/drain regions is formed at a surface of a silicon substrate. Sidewall insulating films formed on the opposite side surfaces of the gate electrode are provided at portions located between the gate electrode and the silicon layers with voids, respectively. A semiconductor device having a field-effect transistor capable of fast operation is formed.

Abstract: A semiconductor device that makes it possible to restrain the increase of the junction capacitance and others while preventing the punch-through and others accompanying the scale reduction, and a production method thereof are obtained. The semiconductor device includes source and drain regions of first conductivity type disposed to sandwich a channel region, and a pair of pocket injection regions of second conductivity type that cover only a neighborhood of side surface parts of the source and drain regions on the channel region side and respectively form a junction only between the neighborhood of the side surface parts and the pocket injection regions.

Abstract: Source/drain regions are formed with two regions of an epitaxial silicon film formed on the surface of the substrate and a region formed by ion implantation and thermal diffusion of impurities into the substrate, and the depth of junction of the source/drain regions is formed at a depth identical with or shallower than the depth of junction of the extension regions. As a result, even if the thickness of the side wall layer is reduced, since the depletion layer of the extension regions with lower impurity concentration compared with the source/drain regions is predominant, the short channel effect are less degraded.

Abstract: A dummy gate electrode is formed before the gate electrode is formed. Extension regions, side wall silicon nitride film, source/drain regions, silicon oxide film, and others are formed with respect to the dummy gate electrode. The dummy gate electrode is removed, and a part of the extension regions diffused to a region immediately under the dummy gate electrode is removed. The removed part is filled with silicon selection epitaxial film. Thereafter, the intended gate electrode is formed. This production method gives a semiconductor device that prevents the deterioration of electrical characteristics caused by short channel effect and parasitic resistance.

Abstract: A semiconductor device that makes it possible to restrain the increase of the junction capacitance and others while preventing the punch-through and others accompanying the scale reduction, and a production method thereof are obtained. The semiconductor device includes source and drain regions of first conductivity type disposed to sandwich a channel region, and a pair of pocket injection regions of second conductivity type that cover only a neighborhood of side surface parts of the source and drain regions on the channel region side and respectively form a junction only between the neighborhood of the side surface parts and the pocket injection regions.

Abstract: According to the inventive method of fabricating a semiconductor device, a silicon substrate is exposed to an oxygen atmosphere of 600° C. to 900° C., for forming silicon oxide films on surfaces of epitaxial silicon layers and those of silicon fragments. Thus, a method of fabricating a semiconductor device capable of preventing electrodes thereof from shorting can be provided.