Abstract: It is an object to provide a light emitting element capable of low-voltage driving; with high luminous efficiency; with high emission luminance; and with long emission lifetime. It is another object to provide a light emitting device and an electronic appliance in which power consumption is reduced; and which can be manufactured at low cost. A light emitting element is provided, including a light emitting layer and a layer including a composite material between a first electrode and a second electrode, where the light emitting layer includes a base material and an impurity element, the layer including the composite material includes an organic compound and an inorganic compound, the layer including the composite material is provided to be in contact with the second electrode, and light emission is obtained by application of a voltage so that an electric potential of the second electrode is higher than that of the first electrode.

Abstract: It is an object of the present invention to provide a light emitting element which can be driven at a low voltage. Other objects of the present invention are to provide a light emitting element with a high luminescent efficiency; a light emitting element with a high luminance; a light emitting element having long-life luminescence; a light emitting element and an electronic device having reduced power consumption; and a light emitting element and an electronic device which can be manufactured at low cost. The light emitting element has a light emitting layer and a barrier layer between a first electrode and a second electrode, the light emitting layer contains a base material and an impurity element, and the barrier layer is provided so as to be in contact with the first electrode. Light emission is obtained when a voltage is applied such that a potential of the second electrode becomes higher than a potential of the first electrode.

Abstract: A light emitting element is provided, which comprises a pair of electrodes, a p-type semiconductor layer, and an n-type semiconductor layer. The p-type semiconductor layer and the n-type semiconductor layer are interposed between the pair of electrodes. The p-type semiconductor layer includes a first sulfide, and the n-type semiconductor layer includes a second sulfide. At least one of the p-type semiconductor layer and the n-type semiconductor layer includes a light emitting center.

Abstract: An object of the present invention is to provide a film forming method for forming a film with reduced defect and to provide a film forming method for forming a film with a uniform quality. In addition, another object is to provide a manufacturing method of a light emitting element which can be driven with low voltage. Further, another object is to provide a manufacturing method of a light emitting element with high light emission efficiency. A film with reduced defect and a uniform quality can be formed by fixing a substrate to a substrate holding unit so that at least a part of a surface of the substrate is exposed, evaporating a vapor deposition material from an evaporation source filled with the vapor deposition material, irradiating the vapor deposition material which is evaporated with a laser beam, and depositing the vapor deposition material on the surface of the substrate.

Abstract: An object is to provide a novel light emitting material. Another object is to provide a light emitting device and an electronic device with reduced power consumption. Still another object is to provide a light emitting device and an electronic device which can be manufactured at low cost. Provided is a light emitting element including a base material, a first impurity element, a second impurity element, and a third impurity element. The base material is one of ZnS, CdS, CaS, Y2S3, Ga2S3, SrS, BaS, ZnO, Y2O3, AlN, GaN, InN, ZnSe, ZnTe, and SrGa2S4; the first impurity element is any of Cu, Ag, Au, Pt, and Si; the second impurity element is any of F, Cl, Br, I, B, Al, Ga, In, and Tl; and the third impurity element is any of Li, Na, K, Rb, Cs, N, P, As, Sb, and Bi.

Abstract: The present invention relates to compounds according to the formula (I): Where RA is a C1-C10 substituted or unsubstituted linear, branch-chained or cyclic alkyl or alkenyl group or a phenyl group according to the formula (II): RB is a C1-C10 substituted or unsubstituted linear, branch-chained or cyclic alkyl or alkenyl group or a phenyl group of the formula (III): R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 are each independently selected from H, C1-C10 (preferably a C1-C4) alkyl or alkenyl group, CF3, F, Cl, Br, I, CN, NO2, NH2, NHR, NRR, COR (acyl group), OR (hydroxyl or ether group), CO2R (carboxylic acid or ester group), or COSR (thioester group) where R is H or a C1-C10 (preferably a C1-C4) alkyl or alkenyl group, an unsubstituted or substituted aryl (preferably, phenyl) or heterocycle group, or a (IV) group, where R3 is H, a C1-C10 (preferably a C1-C4) alkyl, alkenyl, ether or a thioether group; and R11 and R12 are independently selected from H or a C1-C3 alkyl or alkenyl group, or a pharmaceutically ac