Abstract: Provided are a substrate processing device, a polishing device, and a substrate processing method. The substrate processing device includes a processing module for processing the substrate with a liquid, and a gas-liquid separation tank connected to the exhaust outlet of the processing module, which separates the liquid from the exhaust received from the processing module and releases the exhaust into an exhaust duct. The gas-liquid separation tank includes a tank body, a heat exchanger arranged inside the tank body and cools the exhaust, and an air nozzle arranged inside the tank body and supplies air to cool the exhaust.

Abstract: A cleaning apparatus includes: a cleaning tank that defines a cleaning space for cleaning a wafer; a wafer rotation mechanism that is arranged inside the cleaning tank and holds and rotates the wafer; a cleaning member that contacts and cleans a surface of the wafer, is rotatable around a central axis extending in a lateral direction, and has a length in an axial direction longer than a radius of the wafer; a swing mechanism that swings the cleaning member around a swing axis located inside the cleaning tank to move the cleaning member from a retracted position outside of the wafer to a cleaning position directly above the wafer; a second cleaning means that cleans the surface of the wafer; and a second swing mechanism that swings the second cleaning means around a second swing axis located inside the cleaning tank to pass directly above a center of the wafer.

Abstract: A substrate cleaning device includes a rotation mechanism that rotates the substrate, a first cleaning solution supply nozzle that discharges a cleaning solution to which ultrasonic vibration is applied to the surface of the substrate, and a swing mechanism that swings the first cleaning solution supply nozzle from a vicinity of a rotation center of the substrate toward an outer peripheral edge of the substrate in a range narrower than a half-surface of the substrate.

Abstract: A substrate cleaning apparatus includes a substrate rotation supporting section that supports and rotates a substrate; a roll holding section that rotatably holds a first roll cleaning member and a second roll cleaning member each having a length almost equal to a radius of the substrate; a roll rotation drive section that rotates the first roll cleaning member and the second roll cleaning member about respective axes of rotation parallel to a front surface of the substrate; and a roll pressing section that brings the first roll cleaning member and the second roll cleaning member that are rotating into sliding contact with the front surface of the substrate. The first roll cleaning member and the second roll cleaning member are disposed so as to cover different radial parts of the front surface of the substrate.

Abstract: A substrate cleaning device and a substrate polishing device are provided. The substrate cleaning device is provided in a substrate polishing device, which includes a polishing table having a polishing surface for polishing a substrate and a top ring holding the substrate with a membrane while surrounding an outer peripheral part of the substrate with a retainer ring, and cleaning the surface after polishing. The top ring is freely movable between a substrate polishing position above the table and a substrate handover position at a side of the table. The substrate cleaning device is provided corresponding to a cleaning position between the polishing and handover positions, and includes a first spray unit including cleaning nozzles for spraying cleaning liquid on the substrate, membrane, and retainer ring at the cleaning position; and a second spray unit including a substrate rinse nozzle spraying rinse liquid onto the substrate at the cleaning position.

Abstract: The present invention relates to a substrate cleaning system and a substrate cleaning method for cleaning a substrate. The substrate cleaning system (50) includes a heater (51), a chemical-liquid diluting module (52), and a cleaning module. A temperature of the diluted-chemical-liquid mixed by the chemical-liquid diluting module (52) is determined to be higher than normal a temperature and lower than a glass transition point of a cleaning member. The cleaning member scrubs the substrate (W) with the diluted chemical liquid having the determined temperature supplied to the substrate (W).

Abstract: A substrate cleaning device includes a rotation mechanism that rotates the substrate, a first cleaning solution supply nozzle that discharges a cleaning solution to which ultrasonic vibration is applied to the surface of the substrate, and a swing mechanism that swings the first cleaning solution supply nozzle from a vicinity of a rotation center of the substrate toward an outer peripheral edge of the substrate in a range narrower than a half-surface of the substrate.

Abstract: According to one embodiment, provided is a substrate cleaning device including a nozzle that includes: a first supply port; a second supply port; a third supply port; a first discharge port; and a third discharge port, wherein the substrate cleaning device is configured to clean a substrate with jets of the second mixed fluid of the gas, the treatment liquid and the surface tension reducing gas.

Abstract: An apparatus for cleaning a substrate has a holding unit 60 that holds a substrate W; a rotated unit 30 connected to the holding unit 60; a rotating unit 35 that is provided on a peripheral outer side of the rotated unit 30 and rotates the rotated unit 30; and a cleaning unit 10, 20 that physically cleans the substrate W held by the holding unit 60.

Abstract: A cleaning apparatus includes: a cleaning tank that defines a cleaning space for cleaning a wafer; a wafer rotation mechanism that is arranged inside the cleaning tank and holds and rotates the wafer; a cleaning member that contacts and cleans a surface of the wafer, is rotatable around a central axis extending in a lateral direction, and has a length in an axial direction longer than a radius of the wafer; a swing mechanism that swings the cleaning member around a swing axis located inside the cleaning tank to move the cleaning member from a retracted position outside of the wafer to a cleaning position directly above the wafer; a second cleaning means that cleans the surface of the wafer; and a second swing mechanism that swings the second cleaning means around a second swing axis located inside the cleaning tank to pass directly above a center of the wafer.

Abstract: A substrate washing device includes a substrate holding mechanism 70 that holds a substrate W, a substrate rotating mechanism 72 that rotates the substrate W held by the substrate holding mechanism 70, and a two-fluid nozzle 46 that ejects a two-fluid jet toward a surface of the rotating substrate W. The two-fluid nozzle 46 is formed of a conductive material. Accordingly, the electrification amount of droplets ejected as the two-fluid jet from the two-fluid nozzle 46 can be suppressed.

Abstract: A substrate cleaning apparatus has: a substrate rotating part that rotates a substrate; an edge cleaning member for cleaning an edge part of the substrate; an edge rotating part that rotates the edge cleaning member around an edge rotary shaft that extends in a direction orthogonal to a substrate rotary shaft; a moving part that moves a position of the edge cleaning member with respect to the edge part of the substrate; and a control part that controls the moving part to move the position of the edge cleaning member with respect to the edge part of the substrate, and causes the edge cleaning member to clean a one-side edge area including a face on one side, a side face area including a side face, and an another-side edge area including a face on another side in the edge part of the substrate.

Abstract: An apparatus for cleaning a substrate has a holding unit 60 that holds a substrate W; a rotated unit 30 connected to the holding unit 60; a rotating unit 35 that is provided on a peripheral outer side of the rotated unit 30 and rotates the rotated unit 30; and a cleaning unit 10, 20 that physically cleans the substrate W held by the holding unit 60.

Abstract: A substrate drying apparatus includes a drying gas nozzle configured so that, assuming that a surface WA of the substrate W is a projection plane, regarding the drying gas flow Gf in the nozzle moving direction Dr, a collision position Gfw with the substrate W is located downstream of a projected discharge position Gfv?, the projected discharge position Gfv? being a discharge position from the drying gas nozzle projected on the projection plane. In a three-dimensional space, the drying gas flow Gf is inclined, such that an angle ? formed by an axis Ga of the drying gas flow Gf and a vertical line Wp of the substrate W is in a range from a half contact angle ?/2 to an angle determined by deducting the half contact angle ?/2 from 90°, the half contact angle ?/2 being a half of the contact angle ?.

Abstract: A substrate washing device includes a substrate holding mechanism 70 that holds a substrate W, a substrate rotating mechanism 72 that rotates the substrate W held by the substrate holding mechanism 70, and a two-fluid nozzle 46 that ejects a two-fluid jet toward a surface of the rotating substrate W. The two-fluid nozzle 46 is formed of a conductive material. Accordingly, the electrification amount of droplets ejected as the two-fluid jet from the two-fluid nozzle 46 can be suppressed.

Abstract: A substrate drying apparatus includes a drying gas nozzle configured so that, assuming that a surface WA of the substrate W is a projection plane, regarding the drying gas flow Gf in the nozzle moving direction Dr, a collision position Gfw with the substrate W is located downstream of a projected discharge position Gfv?, the projected discharge position Gfv? being a discharge position from the drying gas nozzle projected on the projection plane. In a three-dimensional space, the drying gas flow Gf is inclined, such that an angle ? formed by an axis Ga of the drying gas flow Gf and a vertical line Wp of the substrate W is in a range from a half contact angle ?/2 to an angle determined by deducting the half contact angle ?/2 from 90°, the half contact angle ?/2 being a half of the contact angle ?.

Abstract: A substrate drying apparatus includes a drying gas nozzle configured so that, assuming that a surface WA of the substrate W is a projection plane, regarding the drying gas flow Gf in the nozzle moving direction Dr, a collision position Gfw with the substrate W is located downstream of a projected discharge position Gfv?, the projected discharge position Gfv? being a discharge position from the drying gas nozzle projected on the projection plane. In a three-dimensional space, the drying gas flow Gf is inclined, such that an angle ? formed by an axis Ga of the drying gas flow Gf and a vertical line Wp of the substrate W is in a range from a half contact angle ?/2 to an angle determined by deducting the half contact angle ?/2 from 90°, the half contact angle ?/2 being a half of the contact angle ?.

Abstract: A substrate drying apparatus includes a drying gas nozzle configured so that, assuming that a surface WA of the substrate W is a projection plane, regarding the drying gas flow Gf in the nozzle moving direction Dr, a collision position Gfw with the substrate W is located downstream of a projected discharge position Gfv?, the projected discharge position Gfv? being a discharge position from the drying gas nozzle projected on the projection plane. In a three-dimensional space, the drying gas flow Gf is inclined, such that an angle ? formed by an axis Ga of the drying gas flow Gf and a vertical line Wp of the substrate W is in a range from a half contact angle ?/2 to an angle determined by deducting the half contact angle ?/2 from 90°, the half contact angle ?/2 being a half of the contact angle ?.

Abstract: A substrate holding apparatus is for holding a substrate such as a semiconductor wafer in a polishing apparatus for polishing the substrate to a flat finish. The substrate holding apparatus comprises a vertically movable member, and an elastic member for defining a chamber. The elastic member comprises a contact portion which is brought into contact with the substrate, and a circumferential wall extending upwardly from the contact portion and connected to the vertically movable member. The circumferential wall has a stretchable and contractible portion which is stretchable and contractible vertically.

Abstract: A substrate holding apparatus is for holding a substrate such as a semiconductor wafer in a polishing apparatus for polishing the substrate to a flat finish. The substrate holding apparatus comprises a vertically movable member, and an elastic member for defining a chamber. The elastic member comprises a contact portion which is brought into contact with the substrate, and a circumferential wall extending upwardly from the contact portion and connected to the vertically movable member. The circumferential wall has a stretchable and contractible portion which is stretchable and contractible vertically.