Abstract: Four frequency components (f1 to f4) (where, f1<f2<f3<f4) are input into a port (10) of a first demultiplexing filter circuit (1), and demultiplexed into low frequency components (f1 and f2) and high frequency components (f3 and f4), and input in a port (20) of a second demultiplexing filter circuit (2) and a port (30) of a third demultiplexing filter circuit (3), respectively. The frequency components (f1 and f2) are demultiplexed into the component (f1) and the component (f2) by the second demultiplexing filter circuit (2), and output from a port (23) and a port (24), respectively. The frequency components (f3 and f4) are demultiplexed into the component (f3) and the component (f4) by the third demultiplexing filter circuit (3), and output from a port (33) and a port (34), respectively.

Abstract: A semiconductor device comprises a clock generating circuit which generates a clock signal; a booster circuit which boosts a supply voltage by using the clock signal to output the boosted voltage; a potential detecting circuit which detects an output potential of the booster circuit to output a frequency changing signal depending on the output potential; and a frequency changing circuit which is interposed between the clock generating circuit and the booster circuit to change the frequency of the clock signal from the clock generating circuit to the booster circuit on the basis of the frequency changing signal.

Abstract: A semiconductor device comprises a booster circuit portion including a plurality of first switching elements connected in series from an output portion and a plurality of first capacitors whose one ends are connected between respective adjacent ones of the first switching elements, the booster circuit portion being inputted with clock signals from the other ends of the first capacitors to output a boosted voltage from the output portion; and a voltage converting circuit portion comprising a plurality of boosting stages each of which includes a second capacitor whose one end is connected to a first voltage source via a second switching element and whose other end is connected to a reference voltage via a third switching element, said second capacitor being charged on the basis of a voltage difference between the first voltage source and the reference voltage, and comprising a plurality of fourth switching elements each of which is provided at least between adjacent ones of the boosting stages to control the nu

Abstract: An approximately rectangular plate-shaped radiation member (2) is provided and support portions (4,6) are attached to lower surface end portions adjacent to a pair of parallel shorter sides of the radiation member (2). The support portion (4) is composed of a laminated circuit member including a laminated demultiplexer and a laminated band pass filter of the reception side and the transmission side respectively connected to the laminated demultiplexer. The radiation member (2) has a power supply terminal (2c) and a ground terminal (2d) at the end portion where the support portion (4) is mounted. The power supply terminal (2c) and the ground terminal (2d) are connected to an antenna terminal (4a) and the ground terminal (4b) of the laminated circuit, respectively. The radiation member (2) has a radiation electrode (2a) where a slot (2b) is formed. The shape of the slot is set so that the radiation electrode (2a) causes resonance in a plurality of frequency bands.

Abstract: Several a transistor, which are inhibited short channel effect moderately according to each transistor's channel length, are formed on a same SOI substrate. In the present invention, forming a first transistor on SOI substrate, and forming a second transistor which has a gate electrode whose length is longer than a gate length of the first transistor in a channel direction The impurities are doped from above a surface of the SOI substrate in an oblique direction against the surface, and from source side and drain side of the first transistor and the second transistor. By this means, a pocket layer is formed under an insulator layer of a SOI substrate.

Abstract: A hydrogen sensor for determining the content of hydrogen based on the transmittance of light includes a substrate having an n-type semiconductor layer placed thereon and also includes a metal layer that is placed on the n-type semiconductor layer, forms a Schottky junction with n-type semiconductor layer, and contains a metal of which the transmittance is varied when the metal adsorbs hydrogen.

Abstract: A semiconductor device and a method of fabricating the same suppress a substrate floating effect without causing lowering of a degree of integration. The semiconductor device has a Silicon-On-Insulator structure which includes a semiconductor layer formed on an insulator, and has at least one MOSFET element. The MOSFET element comprises a source region; a drain region which is opposed to the source region; a body region disposed between the source and drain regions; a gate region positioned on or close to a surface of the body region, so as to form an electrically conducting channel in the body region; and an extracting region being in contact with both of the body region and the source region. The extracting region has a conductivity type which is the same as a conductivity type of the body region and has a concentration higher than that of the body region.

Abstract: The present invention provides a liquid crystal display device. An optical film having negative uniaxial double refractive index ellipsoids is arranged below a semi-transmitting liquid crystal display cell and, thereafter, a &lgr;/4 phase difference plate, a &lgr;/2 phase difference plate and a polarizer are arranged. The orientation axis direction of the optical film having negative uniaxial double refractive index ellipsoids is substantially equal to the direction which is rotated by 90° in the clockwise direction from a resultant vector of the orientation axis direction of the upper orientation film and the orientation axis direction of the lower orientation film of the liquid crystal display cell. Further, phase lagging axis of the upper and lower &lgr;/4 phase difference plate is set substantially equal to the orientation axis direction of the optical film having negative uniaxial double refractive index ellipsoids.

Abstract: A semiconductor device is disclosed, which comprises a semiconductor substrate with which a circuit element is provided, an insulating layer which is provided on the semiconductor substrate and has a concave portion, a first conductive line layer which is provided at the concave portion in the insulating layer and has a first thickness, and a second conductive line layer which is provided at the concave portion in the insulating layer so as to be formed apart in a horizontal direction from the first conductive line layer and has a second thickness which is smaller than the first thickness.

Abstract: At least one filter block (25, 35, 45) is formed in a thin and flat dielectric multilayer structure (21) and fixed with radiation elements (2, 3). Each filter block includes at least one of a low-pass filter, a high-pass filter and a band-eliminating filter. On the surface (one major surface) side and/or the side face of the multilayer structure, at least one radiation element (2, 3) being connected with the filter block is provided and feeding parts (28, 38, 48) for supplying signal to the radiation elements are provided on the rear surface of the multilayer structure. Consequently, the antenna and the filter block are integrated and a small surface mountable antenna with a built-in filter of a structure such that signals are not mixed each other even when signals of a plurality of frequency bands are transmitted/received can be obtained.

Abstract: An approximately rectangular plate-shaped radiation member (2) is provided and support portions (4,6) are attached to lower surface end portions adjacent to a pair of parallel shorter sides of the radiation member (2). The support portion (4) is composed of a laminated circuit member including a laminated demultiplexer and a laminated band pass filter of the reception side and the transmission side respectively connected to the laminated demultiplexer. The radiation member (2) has a power supply terminal (2c) and a ground terminal (2d) at the end portion where the support portion (4) is mounted. The power supply terminal (2c) and the ground terminal (2d) are connected to an antenna terminal (4a) and the ground terminal (4b) of the laminated circuit, respectively. The radiation member (2) has a radiation electrode (2a) where a slot (2b) is formed. The shape of the slot is set so that the radiation electrode (2a) causes resonance in a plurality of frequency bands.

Abstract: A full depletion SOI-MOS transistor includes a substrate, a buried oxide layer, a thin silicon layer, an isolation layer, a gate insulation layer, a gate electrode and a polysilicon layer. The buried oxide layer is formed on a main surface of the substrate. The thin silicon layer is formed on the buried oxide layer and includes a channel region and a source/drain region. The isolation layer is formed on the buried oxide layer and surrounds the thin silicon layer. A gate insulation layer and gate electrode are formed on the channel region of the thin silicon layer. The polysilicon layer is formed on the source/drain region of the thin silicon layer.

Abstract: Four frequency components (f1 to f4) (where, f1<f2<f3<f4) are input into a port (10) of a first demultiplexing filter circuit (1), and demultiplexed into low frequency components (f1 and f2) and high frequency components (f3 and f4), and input in a port (20) of a second demultiplexing filter circuit (2) and a port (30) of a third demultiplexing filter circuit (3), respectively. The frequency components (f1 and f2) are demultiplexed into the component (f1) and the component (f2) by the second demultiplexing filter circuit (2), and output from a port (23) and a port (24), respectively. The frequency components (f3 and f4) are demultiplexed into the component (f3) and the component (f4) by the third demultiplexing filter circuit (3), and output from a port (33) and a port (34), respectively.

Abstract: The dielectric ceramic composition of the first aspect of the invention comprises an essential component having a compositional formula of xBaO-yTiO2-zNd2O3 (wherein 0.02≦x≦0.2, 0.6≦y≦0.8, 0.01≦z≦0.3, x+y+z=1), and contains two types of glass powder, one comprising PbO, ZnO and B2O3 and the other comprising SiO2 and B2O3, and a third component that comprises Al2O3, SrTiO3, GeO2 and Li2O. Its advantages are that it can be sintered at low temperatures, its dielectric constant &egr;r falls between 10 and 50 or so, its unloaded Q is large, and its temperature-dependent resonant frequency change is small. The dielectric ceramic composition of the second aspect of the invention comprises an essential component having a compositional formula of s(xBaO-yTiO2-zNd2O3)-tNd2Ti2O7 (wherein 0.02≦x≦0.2, 0.6≦y≦0.8, 0.01≦z≦0.3, x+y+z=1, 0.1≦s≦0.8, 0.2≦t≦0.

Abstract: The present invention provides a liquid crystal display device which reduces the reflection of light from a transmissive region, enhances a contrast of images and suppresses display of inverted images. The liquid crystal display device includes a first background film made of silicon nitride and a second background film made of silicon oxide over a glass substrate, and thin film transistors and light transmissive pixel portions are formed over the second background film. The thin film transistor is constituted of a polysilicon film, agate electrode, a drain electrode and a source electrode, while a gate insulation film, an interlayer insulation film and an organic film are formed over the pixel portion. Further, the liquid crystal display device has a function of reflecting an external light, wherein by forming the first background film thicker than the second background film, the inversion of images of a transmissive type liquid crystal panel can be suppressed.

Abstract: In a field effect transistor having an active region defined by a device isolation region, and a gate electrode formed over the active region, in the lateral direction of the gate electrode, the source and drain formed in the active region is narrower than the active region at least at the parts proximate to each other to create a rounding region for allowing an additional current to flow through the rounding region. This increases the on-current, with almost no increase in the off-current. The operation speed is thereby increased, without increase in the power consumption during stand-by.

Abstract: A dielectric ceramic composition for high frequency wave having a composition comprising Al, Zr, Ti, Sn and O as a basic composition and represented by compositional formula: aAl2O3-bZrO2-cTiO2-dSnO2 (in which 0.4068<a<0.9550, 0<b<0.1483, 0.0225<c<0.3263, 0.0203<d<0.1186, a+b+c+d=1).

Abstract: A dielectric ceramic composition comprising a first compound having the general formula, aCaTiO3—(1−a)Ca(Al½Nb½)O3 in which 0.4≦a≦0.6. Preferably, it further contains a second compound selected from the group consisting of zirconium oxide (ZrO2), manganese oxide (MnO2) and antimony trioxide (Sb2O3), with the second compound present in an amount no more than 2 parts by weight relative to 100 parts by weight of the first compound.

Abstract: A dielectric ceramic composition contains a glass component in an amount of 5 to 150 parts by-weight based on 100 parts by weight of the main component represented by the formula: xZn2TiO4-(1−x)ZnTiO3-yTiO2, wherein x satisfies O<x<1 and y satisfies 0≦y≦0.5. The dielectric ceramic composition is sintered at a temperature of 800 to 1000° C. where integration and lamination with a low resistant conductor such as Cu or Ag by the simultaneous sintering can be performed. The dielectric ceramic composition has a low dielectric loss tan &dgr; (high Q-value), a small absolute value in temperature coefficient &tgr;f of resonant frequency and a dielectric constant &egr;r on the order of 8 to 30 so as to form laminated ceramic parts and the like into an appropriate size.

Abstract: The dielectric ceramic composition of the first aspect of the invention comprises an essential component having a compositional formula of xBaO-yTiO2-zNd2O3 (wherein 0.02≦x≦0.2, 0.6≦y≦0.8, 0.01≦z≦0.3, x+y+z=1), and contains two types of glass powder, one comprising PbO, ZnO and B2O3 and the other comprising SiO2 and B2O3, and a third component that comprises Al2O3, SrTiO3, GeO2 and Li2O. Its advantages are that it can be sintered at low temperatures, its dielectric constant &egr;r falls between 10 and 50 or so, its unloaded Q is large, and its temperature-dependent resonant frequency change is small.