Abstract: A developing unit includes a developer bearing member, a developer transporter, a developer conveyance system for directing the developer, including a supply path, a recovery path, and an agitation path, a developer supply opening through which the developer is supplied to the developer conveyance system, a developer supply device for supplying the developer from the developer supply opening to the developer conveyance system, a developer discharge device for discharging the developer outside the developing unit, a developer level rise detector for detecting increase in a level of the developer between the downstream end of the recovery path facing the developer bearing member in the direction of developer transport and a portion of the agitation path where the agitation path receives the collected developer from the recovery path, and a controller for controlling the developer discharge device based on the detection result provided by the developer level rise detector.

Abstract: A method of manufacturing a semiconductor device reducing interface resistance of n-type and p-type MISFETs are provided. According to the method, a gate dielectric film and a gate electrode of the n-type MISFET are formed on a first semiconductor region, a gate dielectric film and a gate electrode of the p-type MISFET are formed on a second semiconductor region, an n-type diffusion layer is formed by ion implantation of As into the first semiconductor region, a first silicide layer is formed by first heat treatment after a first metal containing Ni is deposited on the n-type diffusion layer, the first silicide layer is made thicker by second heat treatment after a second metal containing Ni is deposited on the first silicide layer and second semiconductor region, and third heat treatment is provided after formation of a second silicide layer and ion implantation of B or Mg into the second silicide layer.

Abstract: The debug device of the present invention is a debug device which stops execution of a program based on one of a conditional break for stopping the program regardless of the condition of a predicated instruction and an unconditional break for stopping the program only when the condition of the predicated instruction is true. The debug device includes: a receiving unit which receives a breakpoint according to an operation by a user; a determination unit which determines the received break point as the unconditional break or the conditional break; and a stop unit operable to stop the program based on the unconditional break or the conditional break determined by the determination unit.

Abstract: It is made possible to reduce the interface resistance at the interface between the nickel silicide film and the silicon. A semiconductor manufacturing method includes: forming an impurity region on a silicon substrate, with impurities being introduced into the impurity region; depositing a Ni layer so as to cover the impurity region; changing the surface of the impurity region into a NiSi2 layer through annealing; forming a Ni layer on the NiSi2 layer; and silicidating the NiSi2 layer through annealing.

Abstract: A developing device capable of conveying discharged developer to the outside of the device well by preventing developer from firmly adhering within a discharge conveyance path, as well as an image forming apparatus and a process cartridge having this developing device.

Abstract: It is made possible to restrain generation of defects at the time of insulating film formation. A method for manufacturing a semiconductor device, includes: placing a semiconductor substrate into an atmosphere, thereby forming a nitride film on a surface of the semiconductor substrate, the atmosphere containing a first nitriding gas nitriding the surface of the semiconductor substrate and a first diluent gas not actually reacting with the semiconductor substrate, the ratio of the sum of the partial pressure of the first diluent gas and the partial pressure of the first nitriding gas to the partial pressure of the first nitriding gas being 5 or higher, and the total pressure of the atmosphere being 40 Torr or lower.

Abstract: It is made possible to reduce the interface resistance at the interface between the nickel silicide film and the silicon. A semiconductor manufacturing method includes: forming an impurity region on a silicon substrate, with impurities being introduced into the impurity region; depositing a Ni layer so as to cover the impurity region; changing the surface of the impurity region into a NiSi2 layer through annealing; forming a Ni layer on the NiSi2 layer; and silicidating the NiSi2 layer through annealing.

Abstract: To provide a relatively small developing device, process cartridge and image forming apparatus that prevent developer, accommodated in a second developer conveying portion for recovering the developer after a developing step, from being pumped up to a developer carrier, and that do not apply a large stress to the developer. A plurality of developer carriers are arranged side-by-side in a direction of gravitational force so as to face an image carrier.

Abstract: A developing device capable of preventing deterioration of the image quality, which is caused when a developer recovered by a developing roller re-adheres thereto, and an image forming apparatus equipped with the developing device. The developer conveyance amount on the upstream side of an agitation conveyance path in a developer conveyance direction becomes larger than the amount of developer to be transported from a recovery conveyance path to the agitation conveyance path, by making the developer conveyance amount on the upstream side of an agitating screw in the developer conveyance direction equal to or larger than the developer conveyance amount on the downstream side of a recovery screw in the developer conveyance direction. Accordingly, the amount of developer existing on the upstream side of the agitation conveyance path in the developer conveyance direction becomes small, whereby the developer can be delivered smoothly from the recovery conveyance path to the agitation conveyance path.

Abstract: A vehicle planetary gear device includes a ring gear, a sun gear, and a carrier, and pinions housed in the carrier. A penetration hole formed in a hollow cylindrical portion of the carrier has two inner wall surfaces that face an outer peripheral surface of a pinion. One of the inner wall surfaces has a curvature radius larger than the radius of the pinion, and has a curvature center that is apart from the radius center of the pinion gear. The pinion is disposed with respect to the carrier with a predetermined space formed between the one of the inner wall surfaces and the outer peripheral surface of the pinion, and thereby slides along a radial direction of the carrier.

Abstract: All port numbers are set at a server, whereas only one port number is set at a client. The client searches for the server by using the set port number. The server responds to searching by the client and notifies the client of the other port number that is not set at the client. The client establishes the communication with the server by using the notified port number. This makes it unnecessary to set all port numbers at the client. It is therefore possible to provide a server client system with time for setting a port number decreased.

Abstract: A developing device which can stably supply a developer to a latent image carrier by preventing the scattered developer from being discharged and thereby preventing the developer from being discharged despite that the amount of developer within the developing device does not increase, and an image forming apparatus using the developing device. A block member serving as a scattered developer discharge prevention member is provided so as to block a path through which the developer scattered as a result of a conveyance operation of a supply screw serving as a developer conveying member moves toward a developer discharge port. Accordingly, the scattered developer is prevented from reaching the developer discharge port and being discharged therefrom.

Abstract: The present invention provides a semiconductor memory device having a tunnel insulating film that does not degrade the endurance characteristics when writing/erasing is repeated, even if the tunnel insulating film is made thinner. The semiconductor memory device includes: a semiconductor substrate; a first insulating film formed on the semiconductor substrate, and including a silicon oxynitride film and a silicon-rich silicon oxide film formed on the silicon oxynitride film, the silicon oxynitride film having a stacked structure formed with a first silicon oxynitride layer, a silicon nitride layer, and a second silicon oxynitride layer in order; a charge storage layer formed on the first insulating film; a second insulating film formed on the charge storage layer; and a control gate formed on the second insulating film.

Abstract: A semiconductor device includes: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate, the portion being located between the source region and the drain region; a charge storage film formed on the first insulating film; a second insulating film formed above the charge storage film and made of a high-permittivity material; a control gate electrode formed above the second insulating film; and a silicon nitride layer including nitrogen atoms having three-coordinate nitrogen bonds, at least one of second-nearest neighbor atoms of the nitrogen atoms being a nitrogen atom. At least one of the charge storage film and the control gate electrode contains silicon, the silicon nitride layer is located between the second insulating film and the at least one of the charge storage film and the control gate electrode.

Abstract: The present invention provides an electric discharge lamp control unit which is capable of enhancing air-tightness in the electric discharge lamp while suppressing increase in the size thereof. The electric discharge lamp control unit for controlling lighting ON/OFF of an electric discharge lamp includes an electronic component in which a circuit element is implemented and which has a connector section for connection to an outside thereof; and a casing for housing the electronic component which includes a base on which the electronic component is mounted and a cover which covers the base. The thorough hole is sealed with the electronic components on the inner side of the base.

Abstract: In a discharge lamp apparatus for lighting a discharge lamp, a ballast is disposed outside of a lamp housing of a discharge lamp and is electrically connected to the discharge lamp through a connector. A ballast housing of the ballast is connected to a bottom wall of the lamp housing. In the ballast housing, a ballast circuit board is arranged along a top wall of the ballast housing that is opposed to the lamp housing. Accordingly, it is less likely that the ballast circuit board will be wetted by condensation or water vapor entered the ballast housing. Additionally, a partition wall can be provided in the ballast housing between the connector and the ballast circuit board to block the condensation or water vapor from flowing toward the ballast circuit board.

Abstract: The present invention provides an electronic control unit which is capable of suppressing harmful effects caused by liquid while suppressing increase in the size thereof. The electronic control unit includes an electronic component in which a circuit element coated with an anti-splash agent is implemented, a casing, and a liquid discharge portion. The casing includes a base on which the electronic component is mounted, a cover which is connected to the base in the state where the electronic component is covered with the cover, and a connector which electrically connects the electronic component to the outside. The liquid discharge portion includes a flow passage in which liquid which has intruded into an internal space in the casing formed by the base, the cover and the connector for housing the electronic component flows, and an opening portion which discharges the liquid to the outside of the internal space via the flow passage.

Abstract: A method is provided with: arranging nitrogen atoms on a surface of a silicon substrate; performing a heat treatment in a hydrogen atmosphere so that the nitrogen atoms and silicon atoms existing on the surface of the silicon substrate are brought into a three-coordinate bond state; and forming a silicon oxide film on the silicon substrate with the three-coordinate bond state of nitrogen atoms and the silicon atoms being maintained.

Abstract: Disclosed is a process for manufacturing a fiber having at least a surface comprised mainly of a thermoplastic resin and carrying solid particles affixed to the surface, comprising the steps of: heating the solid particles having a melting point or a decomposition point higher than a melting point of the thermoplastic resin, to a temperature higher than the melting point of the thermoplastic resin, bringing the heated solid particles into contact with the fiber while maintaining the temperature of the heated solid particles higher than the melting point of the thermoplastic resin to bond the solid particles to a fiber surface by fusing the fiber surface, and cooling the fused fiber carrying the solid particle to affix the solid particles to the fiber surface. Further, an apparatus of manufacturing the same, and a fiber having at least a surface comprised mainly of a thermoplastic resin and carrying solid particles affixed to the surface are also disclosed.

Abstract: An image forming apparatus of includes a developing device bifunctioning as a cleaning device for collecting toner grains left on a photoconductive drum after the transfer of a toner image from the drum to a paper sheet or similar image transfer medium. In the event of toner collection, a DC voltage is applied that causes the residual toner to move from the drum toward a developing sleeve. A main-pole magnet generates, at a position where the developing sleeve faces the drum, a magnetic field of between 100 mT and 200 mT in a direction normal to the surface of the sleeve.