Abstract: An endless belt includes a resin and conductive particles, in which a content of the conductive particles with respect to the endless belt is 5% by volume or more and 20% by volume or less in terms of a volume ratio, a Young's modulus of the endless belt is 3,000 MPa or more, and the number of times of bending endurance of the endless belt measured by an MIT test specified in JIS P8115:2001 is 10,000 or more.

Abstract: A network of a new configuration is flexibly constructed while maintaining a stable operation in the network. A management device includes: a detection unit that detects addition of a function unit to a network including one or a plurality of on-vehicle function units; an acquisition unit that acquires function unit information of a new function unit that is the function unit the addition of which has been detected by the detection unit and function unit information of each on-vehicle function unit, each piece of function unit information including information regarding network configuration of a layer lower than an application layer; and a generation unit that, based on the pieces of function unit information acquired by the acquisition unit, generates configuration information of a new network that is the network further including the new function unit.

Abstract: A complementary transistor is constituted of a first transistor TR1 and a second transistor TR2, active regions 32, 42 of the respective transistors are formed by layering first A layers 33, 43 and the first B layers 35, 45 respectively, surface regions 201, 202 provided in a base correspond to first A layers 33, 43 respectively, first B layers 35, 45 each have a conductivity type different from that of the first A layers 33, 43, and extension layers 36, 46 of the first B layer are provided on insulation regions 211,212 respectively.

Abstract: A car monitoring system includes: a sub-system to execute a predetermined function by controlling at least one instrument mounted on a railcar; and a monitoring device to monitor an operating state of the sub-system. The sub-system includes: a sub-system controller to create status data containing pieces of event information based on a signal output from the instrument and periodically transmit the status data to the monitoring device, the information informing the monitoring device of a change in state of the instrument; and a first memory to store a first event parameter file defines a data structure of an event region of the status data, the event region being a region wherein the information are stored. When the first parameter file is changed, and the sub-system controller creates the status data, the controller reconstructs the data structure of the region and resets the information in accordance with the reconstructed data structure.

Abstract: A semiconductor device and method of making same. The semiconductor device includes: a first conductivity type transistor and a second conductivity type transistor, wherein each of the first conductivity type transistor and the second conductivity type includes a gate insulating film formed on a base, a metal gate electrode formed on the gate insulating film, and side wall spacers formed at side walls of the metal gate electrode, wherein the gate insulating film is made of a high dielectric constant material, and wherein offset spacers are formed between the side walls of the metal gate electrode and the inner walls of the side wall spacers in any one of the first conductivity type transistor and the second conductivity type transistor, or offset spacers having different thicknesses are formed in the first conductivity type transistor and the second conductivity type transistor.

Abstract: An inorganic compound particle supply member includes inorganic compound particles, and the Young's modulus of the inorganic compound particle supply member is lower than the Young's modulus of a supply object to be supplied with the inorganic compound particles.

Abstract: A complementary transistor is constituted of a first transistor TR1 and a second transistor TR2, active regions 32, 42 of the respective transistors are formed by layering first A layers 33, 43 and the first B layers 35, 45 respectively, surface regions 201, 202 provided in a base correspond to first A layers 33, 43 respectively, first B layers 35, 45 each have a conductivity type different from that of the first A layers 33, 43, and extension layers 36, 46 of the first B layer are provided on insulation regions 211,212 respectively.

Abstract: An endless belt includes a resin, and particles having an average primary particle diameter of 8 nm or more and 20 nm or less. In a volume frequency distribution of the particles determined by small-angle X-ray scattering measurement, the ratio (area B/area A) of graph area B of a particle diameter region of over 35 nm to graph area A of a particle diameter region of 35 nm or less is 0.3 or less.

Abstract: A semiconductor device and method of making same. The semiconductor device includes: a first conductivity type transistor and a second conductivity type transistor, wherein each of the first conductivity type transistor and the second conductivity type includes a gate insulating film formed on a base, a metal gate electrode formed on the gate insulating film, and side wall spacers formed at side walls of the metal gate electrode, wherein the gate insulating film is made of a high dielectric constant material, and wherein offset spacers are formed between the side walls of the metal gate electrode and the inner walls of the side wall spacers in any one of the first conductivity type transistor and the second conductivity type transistor, or offset spacers having different thicknesses are formed in the first conductivity type transistor and the second conductivity type transistor.

Abstract: An inorganic compound particle supply member includes inorganic compound particles, and the Young’s modulus of the inorganic compound particle supply member is lower than the Young’s modulus of a supply object to be supplied with the inorganic compound particles.

Abstract: An endless belt includes a resin, and particles having an average primary particle diameter of 8 nm or more and 20 nm or less. In a volume frequency distribution of the particles determined by small-angle X-ray scattering measurement, the ratio (area B/area A) of graph area B of a particle diameter region of over 35 nm to graph area A of a particle diameter region of 35 nm or less is 0.3 or less.

Abstract: An endless belt includes a layer containing a resin and electrically conductive particles. In the endless belt, a discharge starting voltage at which discharge starts when a voltage is applied to the layer and increased is 0.9 kV or more.

Abstract: Disclosed herein is a composite transistor which includes a first transistor TR1 including a control electrode, a first active region, a first A extending part, and a first B extending part, and a second transistor TR2 including a control electrode, a second active region, a second A extending part, and a second B extending part. The first active region, the second active region, and the control electrode overlap one another. Both the first A extending part and the first B extending part extend from the first active region and both the second A extending part and the second B extending part extend from the second active region. The first electrode is connected to the first A extending part, the second electrode is connected to the second A extending part, and the third electrode is connected to the first B extending part and the second B extending part.

Abstract: An imaging unit according to an embodiment of the present disclosure includes: a first substrate; a second substrate; and a wiring line. The first substrate includes a sensor pixel on a first semiconductor substrate. The sensor pixel performs photoelectric conversion. The second substrate includes a readout circuit on a second semiconductor substrate. The readout circuit outputs a pixel signal based on electric charge outputted from the sensor pixel. The second substrate is stacked on the first substrate. The wiring line extends between the first semiconductor substrate and the second semiconductor substrate in a direction parallel with the first semiconductor substrate. The wiring line at least partially has a stack region in which a semiconductor layer and a metal layer are stacked.

Abstract: An endless belt includes: a resin; and electrically conductive particles, wherein an integrated discharge amount is 350 ?C or less. The integrated discharge amount is determined by disposing an electrode at a position spaced 60 ?m apart from the outer circumferential surface of the belt, applying a voltage to the electrode, and measuring the amount of discharge for a period of 1 second after the voltage reaches 1300 V.

Abstract: An endless belt contains: a resin; electrically conductive carbon particles; and a surfactant. When polyester resin particles having a volume average particle diameter of 4.7 ?m are caused to adhere to an outer circumferential surface of the endless belt and then air is blown onto the outer circumferential surface from an upper side of the outer circumferential surface while the blowing pressure of the air is increased, all the polyester resin particles adhering to the outer circumferential surface are separated from the outer circumferential surface before or when the blowing pressure reaches 6 kPa.