Abstract: An electrode structure includes: a plurality of pixel electrodes arranged separately from each other; and a plurality of dielectric layers laminated in a first direction with respect to the plurality of pixel electrodes, in which the plurality of dielectric layers includes: a first dielectric layer that spreads over the plurality of pixel electrodes in a direction intersecting with the first direction; and a second dielectric layer that includes dielectric material having a refractive index higher than that of the first dielectric layer, sandwiches the first dielectric layer together with the plurality of pixel electrodes, and has a slit at a position overlapping space between pixel electrodes adjacent when viewed from the first direction.

Abstract: A three-dimensional memory device includes layer stacks each of which includes a first-tier alternating stack of first insulating layers and first electrically conductive layers and a second-tier alternating stack of second insulating layers and second electrically conductive layers separated by a backside trench. Memory opening fill structures vertically extend through a respective layer stack, and includes a respective vertical stack of memory elements and a respective vertical semiconductor channel. In one embodiment, a bridge structure spans an entire width of the backside trench such that a top surface of the bridge structure is located below a top surface of the second-tier alternating stack, and a bottom surface of the bridge structure is located above a bottom surface of the first-tier alternating stack. In another embodiment, a perforated bridge structure includes a plurality of vertically-extending openings.

Abstract: A three-dimensional memory device includes layer stacks each of which includes a first-tier alternating stack of first insulating layers and first electrically conductive layers and a second-tier alternating stack of second insulating layers and second electrically conductive layers separated by a backside trench. Memory opening fill structures vertically extend through a respective layer stack, and includes a respective vertical stack of memory elements and a respective vertical semiconductor channel. In one embodiment, a bridge structure spans an entire width of the backside trench such that a top surface of the bridge structure is located below a top surface of the second-tier alternating stack, and a bottom surface of the bridge structure is located above a bottom surface of the first-tier alternating stack. In another embodiment, a perforated bridge structure includes a plurality of vertically-extending openings.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, an array of memory opening fill structures located within an array of memory openings vertically extending through the alternating stack, and a drain-select-level isolation structure vertically extending through drain-select-level electrically conductive layers between two rows of memory opening fill structures. The drain-select-level isolation structure may comprise a low-k dielectric material or an air gap.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, an array of memory opening fill structures located within an array of memory openings vertically extending through the alternating stack, and a drain-select-level isolation structure vertically extending through drain-select-level electrically conductive layers between two rows of memory opening fill structures. The drain-select-level isolation structure may comprise a low-k dielectric material or an air gap.

Abstract: A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a dielectric moat fill structure that includes a nested structure including, from outside to inside, an outer dielectric liner having a first Young's modulus, an outer material layer having a second Young's modulus greater than the first Young's modulus, a dielectric fill material portion, an inner material layer having the second Young's modulus, and an inner dielectric liner having the first Young's modulus, a vertically alternating sequence of insulating plates and dielectric material plates at least partially laterally surrounded by the dielectric moat fill structure, and an interconnection via structure vertically extending the vertically alternating sequence.

Abstract: Contact via openings are formed through a retro-stepped dielectric material portion in a three-dimensional memory device to underlying etch stop structures. The etch stop structures may include a stepped conductive or semiconductor etch stop plate overlying stepped surfaces in the staircase region. The contact via openings are extended through the etch stop structures. Alternatively, electrically conductive layers, including a topmost dummy electrically conductive layer in the staircase region, may be employed as etch stop structures. In this case, the contact via openings can be extended through the electrically conductive layers. Insulating spacers are formed at peripheral regions of the extended contact via openings. Contact via structures surrounded by the insulating spacers are formed in the extended contact via openings to a respective underlying electrically conductive layer.

Abstract: A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a vertical semiconductor channel, a memory film in contact with the vertical semiconductor channel, and a vertical stack of tubular dielectric spacers laterally surrounding the memory film. The tubular dielectric spacers may include tubular graded silicon oxynitride portions having a composition gradient such that an atomic concentration of nitrogen decreases with a lateral distance from an outer sidewall of the memory film, or may include tubular composite dielectric spacers including a respective tubular silicon oxide spacer and a respective tubular dielectric metal oxide spacer. Each of the electrically conductive layers has a hammerhead-shaped vertical cross-sectional profile.

Abstract: A memory device includes a lower source-level semiconductor layer, a source contact layer, an upper source-level semiconductor layer, and an alternating stack of insulating layers and electrically conductive layers, and a memory opening fill structure vertically extending through the alternating stack and down to an upper portion of the lower source-level semiconductor layer. The memory opening fill structure includes a vertical semiconductor channel, a memory film laterally surrounding the vertical semiconductor channel, and an annular semiconductor cap contacting a bottom surface of the memory film and contacting a top surface segment of the source contact layer. The annular semiconductor cap may be employed as an etch stop structure during a manufacturing process.

Abstract: A display device for a musical instrument includes a touch panel and a switcher. The touch panel is placed to be adjacent to an exterior member that constitutes appearance of the musical instrument. The switcher switches appearance of the touch panel between a first mode and a second mode in which the appearance of the touch panel is closer to appearance of the exterior member than in the first mode.

Abstract: A bonded assembly includes a first three-dimensional memory die containing a first alternating stack of first insulating layers and first electrically conductive layers and first memory structures located in the first alternating stack, a second three-dimensional memory die bonded to the first three-dimensional memory die, and containing a second alternating stack of second insulating layers and second electrically conductive layers, and second memory structures located in the second alternating stack. The first electrically conductive layers have different lateral extents along the first horizontal direction that decrease with a respective vertical distance from driver circuit devices, and the second electrically conductive layers have different lateral extents along the first horizontal direction that increase with the respective vertical distance from the driver circuit devices.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, an array of memory opening fill structures located within an array of memory openings vertically extending through the alternating stack, and a drain-select-level isolation structure vertically extending through drain-select-level electrically conductive layers between two rows of memory opening fill structures. The drain-select-level isolation structure may comprise a low-k dielectric material or an air gap.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, an array of memory opening fill structures located within an array of memory openings vertically extending through the alternating stack, and a drain-select-level isolation structure vertically extending through drain-select-level electrically conductive layers between two rows of memory opening fill structures. The drain-select-level isolation structure may comprise a low-k dielectric material or an air gap.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory opening fill structures including a respective vertical semiconductor channel and a respective memory film, and support pillar structures including a respective dummy vertical semiconductor channel, a respective dummy memory film, and a vertical stack of dielectric spacer fins located at levels of the electrically conductive layers and interposed between the electrically conductive layers and the respective dummy memory film.

Abstract: Two types of support pillar structures are formed in a staircase region of an alternating stack of insulating layers and sacrificial material layers. First-type support pillar structures are formed in areas distal from backside trenches to be subsequently formed, and second-type support pillar structures may be formed in areas proximal to the backside trenches. The second-type support pillar structures may be formed as dielectric support pillar structures, or may be formed with at least one additional dielectric spacer.

Abstract: Two types of support pillar structures are formed in a staircase region of an alternating stack of insulating layers and sacrificial material layers. First-type support pillar structures are formed in areas distal from backside trenches to be subsequently formed, and second-type support pillar structures may be formed in areas proximal to the backside trenches. The second-type support pillar structures may be formed as dielectric support pillar structures, or may be formed with at least one additional dielectric spacer.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, memory opening fill structures located within a respective memory opening vertically extending through the alternating stack in a memory array region, and support pillar structures vertically extending through the alternating stack. Each of the memory opening fill structures includes a respective vertical semiconductor channel and a respective memory film that contacts each layer within the alternating stack. Each of the support pillar structures includes a respective dummy vertical semiconductor channel, a respective dummy memory film, and at least one respective dielectric spacer material portion laterally surrounding the respective dummy memory film and interposed between the electrically conductive layers and the respective dummy memory film.

Abstract: A three-dimensional memory device includes a first alternating stack of first word lines and first insulating layers, first memory stack structures vertically extending through the first alternating stack, a second alternating stack of second word lines and second insulating layers, second memory stack structures vertically extending through the second alternating stack, plural backside trench fill structures located between the first alternating stack and the second alternating stack, and a bridge region located between the plural backside trench fill structures and between the between the first alternating stack and the second alternating stack. At least one insulating layer extends continuously through the first alternating stack, the second alternating stack, and the bridge region.

Abstract: A semiconductor structure includes a semiconductor device, bit lines electrically connected to the semiconductor device, air gaps located between the bit lines, a capping-level material layer, a via-level dielectric material layer located between the bit lines and the capping-level material layer, and conductive via structures extending through the via-level dielectric material layer and contacting a top surface of a respective one of the bit lines. The capping-level material layer contains cavity-containing openings exposing the air gaps. The capping-level material layer contains protruding portions that extend into peripheral regions of the cavity-containing openings.

Abstract: A three-dimensional memory device includes layer stacks located over a substrate and laterally spaced apart from each other by backside trenches. Each of the layer stacks includes a respective alternating stack of insulating layers and electrically conductive layers. Memory openings vertically extend through a respective one of the alternating stacks and are filled with a respective memory opening fill structure. Each of the memory opening fill structures includes a respective vertical semiconductor channel and a respective vertical stack of memory elements. Each backside trench fill structure includes a respective row of backside trench bridge structures that are more distal from the substrate than a most distal one of the electrically conductive layers is from the substrate. The backside trench bridge structures can provide structural support during a replacement process that forms the electrically conductive layers.