Abstract: Semiconductor laser assembly 1 is provided with semiconductor laser device 6 and heat dissipation member 24. Semiconductor laser device 6 includes semiconductor laser element 15, lead-frame 11, lower and upper enclosures 18 and 19 and plate-like spring 21 connected to lead-frame 11. Semiconductor laser element 15 is mounted on lead-frame 11 through sub-mounting member 16. Lower and upper enclosures 18 and 19 have an opening through which laser beams from semiconductor laser element 15 are emitted. Plate-like spring 21 is connected to lead-frame 11 and has wing and holding portions 22 and 23. Holding portion 23 is a C-character in cross section to put lower and upper enclosures 18 and 19 together. Heat dissipation member 24 has inside walls to define perforation 25, so that wing portions 22 of plate-like spring 21 pushes semiconductor laser device 6 against the inside walls of heat dissipation member 24 when the semiconductor laser device 6 is set in perforation 25.

Abstract: A method for producing an LPG fraction, a gasoline fraction, a kerosene fraction, a gas oil fraction, monocyclic aromatic hydrocarbon and a non-aromatic naphtha fraction from hydrocracked oil includes hydrocracking hydrocarbon oil containing polycyclic aromatic hydrocarbon to convert into a light hydrocarbon fraction, and efficiently and selectively producing monocyclic aromatic hydrocarbon with higher valuable alkylbenzenes. The method for producing hydrocarbon fraction comprises subjecting hydrocarbon feedstock containing polycyclic aromatic hydrocarbon and in which the ratio of carbons constituting an aromatic ring to the total carbons in the hydrocarbon oil (the aromatic ring-constituting carbon ratio) is 35 mole % or more to catalytic cracking in the presence of hydrogen. 40% or more of a fraction with a boiling point of 215° C. or higher in the hydrocarbon feedstock is converted into a fraction with a boiling point lower than 215° C.

Abstract: A hydrocarbon isomerization method of making hydrocarbons containing at least 50 wt. % of saturated hydrocarbons having 7 and 8 carbon atoms (so-called heavy naphtha) come into contact, in the presence of hydrogen, with a solid acid catalyst containing a platinum group metal component supported on a carrier that contains as metal components at least one group IV metal component selected from the group consisting of titanium, zirconium and hafnium and at least one group VI metal component selected from the group consisting of tungsten and molybdenum. In particular, the isomerization method is preferably carried out at a temperature in a range of 190 to 250° C. and a pressure in a range of 0.8 to 10 MPa and, as the catalyst, it is preferable to use a solid acid catalyst in which the carrier further contains aluminum as a metal component.

Abstract: Proposed is a novel soluble trauma-healing and hemostatic cellulose fiber capable of absorbing and readily dissolving hemorrhaging trauma loci when applied thereto and of promoting the hemostatic action of blood platelets and fibrin and cell adhesion to the trauma site. The coagulation protein-containing soluble trauma-healing and hemostatic cellulose fiber is produced in that after treatment of a natural or regenerated cellulose fiber with an aqueous sodium hydroxide solution, said fiber is carboxymethylated by reaction with a monochloro acetic acid solution for a given time (hours) in such a manner that the degree of partial substitution of the glucose units constituting the cellulose molecule (etherification degree) is 0.5-less than 1.0% and that, furthermore, the coagulation proteins fibrinogen, thrombin, and coagulation factor XIII are imparted by surface application or chemical bonding.

Abstract: In one aspect, a semiconductor laser device may include a supporting member, a semiconductor laser element provided over the supporting member, and configured to emit a laser from a front surface and monitoring laser from a rear surface, and a photo receiving element provided over the supporting member, and configured to receive the monitoring laser from the semiconductor laser element at a photo receiving region, the photo receiving region provided on a side surface of the photo receiving element, wherein the side surface of the photo receiving element has a smaller area than an area of a bottom surface of the photo receiving element.

Abstract: A multistage high frequency power amplifier-circuit device has a plurality of semiconductor amplification elements connected in a cascade. The circuit device is provided with a bias control circuit used to control the bias voltage or bias current of the output semiconductor amplification element in each stage so as to reduce the variation of the output power with respect to the power control signal voltage in an area around the threshold voltage of the semiconductor amplification elements. This realizes a high frequency power amplifier circuit device provided with excellent controllability of the output power and high efficiency at the time of low power output realized with use of such a control voltage as a power control signal.

Abstract: A semiconductor laser array is described. The semiconductor laser array may include a plurality of semiconductor laser elements including a first laser element and a second laser element. The first laser element may be configured to emit a shorter wavelength laser than the second laser element. The emission portion of the first laser element provided substantially on a center line of a substrate.

Abstract: A multistage high frequency power amplifier-circuit device has a plurality of semiconductor amplification elements connected in a cascade. The circuit device is provided with a bias control circuit used to control the bias voltage or bias current of the output semiconductor amplification element in each stage so as to reduce the variation of the output power with respect to the power control signal voltage in an area around the threshold voltage of the semiconductor amplification elements. This realizes a high frequency power amplifier circuit device provided with excellent controllability of the output power and high efficiency at the time of low power output realized with use of such a control voltage as a power control signal.

Abstract: A multistage high frequency power amplifier circuit device has a plurality of semiconductor amplification elements connected in a cascade. The circuit device is provided with a bias control circuit used to control the bias voltage or bias current of the output semiconductor amplification element in each stage so as to reduce the variation of the output power with respect to the power control signal voltage in an area around the threshold voltage of the semiconductor amplification elements. This realizes a high frequency power amplifier circuit device provided with excellent controllability of the output power and high efficiency at the time of low power output realized with use of such a control voltage as a power control signal.

Abstract: One aspect of the present invention may include a semiconductor laser array, comprising: a substrate; a first laser element on the substrate, the first laser element having a first resonator; a second laser element on the substrate, the second laser element having a second resonator, the second resonator being shorter in cavity length than the first resonator; and a protrusion on the substrate, the protrusion being substantially equal in height from the substrate with one of the first laser element and the second laser element.

Abstract: Semiconductor laser assembly 1 is provided with semiconductor laser device 6 and heat dissipation member 24. Semiconductor laser device 6 includes semiconductor laser element 15, lead-frame 11, lower and upper enclosures 18 and 19 and plate-like spring 21 connected to lead-frame 11. Semiconductor laser element 15 is mounted on lead-frame 11 through sub-mounting member 16. Lower and upper enclosures 18 and 19 have an opening through which laser beams from semiconductor laser element 15 are emitted. Plate-like spring 21 is connected to lead-frame 11 and has wing and holding portions 22 and 23. Holding portion 23 is a C-character in cross section to put lower and upper enclosures 18 and 19 together. Heat dissipation member 24 has inside walls to define perforation 25, so that wing portions 22 of plate-like spring 21 pushes semiconductor laser device 6 against the inside walls of heat dissipation member 24 when the semiconductor laser device 6 is set in perforation 25.

Abstract: A hydrocarbon isomerization method of making hydrocarbons containing at least 50 wt. % of saturated hydrocarbons having 7 and 8 carbon atoms (so-called heavy naphtha) come into contact, in the presence of hydrogen, with a solid acid catalyst comprising a platinum group metal component supported on a carrier that contains as metal components at least one group IV metal component selected from the group consisting of titanium, zirconium and hafnium and at least one group VI metal component selected from the group consisting of tungsten and molybdenum. In particular, the isomerization method is preferably carried out at a temperature in a range of 190 to 250° C. and a pressure in a range of 0.8 to 10 MPa, and as the catalyst it is preferable to use a solid acid catalyst in which the carrier further contains aluminum as a metal component.

Abstract: A multistage high frequency power amplifier-circuit device has a plurality of semiconductor amplification elements connected in a cascade. The circuit device is provided with a bias control circuit used to control the bias voltage or bias current of the output semiconductor amplification element in each stage so as to reduce the variation of the output power with respect to the power control signal voltage in an area around the threshold voltage of the semiconductor amplification elements. This realizes a high frequency power amplifier circuit device provided with excellent controllability of the output power and high efficiency at the time of low power output realized with use of such a control voltage as a power control signal.

Abstract: A multistage high frequency power amplifier circuit device has a plurality of semiconductor amplification elements connected in a cascade. The circuit device is provided with a bias control circuit used to control the bias voltage or bias current of the output semiconductor amplification element in each stage so as to reduce the variation of the output power with respect to the power control signal voltage in an area around the threshold voltage of the semiconductor amplification elements. This realizes a high frequency power amplifier circuit device provided with excellent controllability of the output power and high efficiency at the time of low power output realized with use of such a control voltage as a power control signal.

Abstract: A multistage high frequency power amplifier circuit device has a plurality of semiconductor amplification elements connected in a cascade. The circuit device is provided with a bias control circuit used to control the bias voltage or bias current of the output semiconductor amplification element in each stage so as to reduce the variation of the output power with respect to the power control signal voltage in an area around the threshold voltage of the semiconductor amplification elements. This realizes a high frequency power amplifier circuit device provided with excellent controllability of the output power and high efficiency at the time of low power output realized with use of such a control voltage as a power control signal.

Abstract: Proposed is a novel soluble trauma-healing and hemostatic cellulose fiber capable of absorbing and readily dissolving hemorrhaging trauma loci when applied thereto and of promoting the hemostatic action of blood platelets and fibrin and cell adhesion to the trauma site. The coagulation protein-containing soluble trauma-healing and hemostatic cellulose fiber is produced in that after treatment of a natural or regenerated cellulose fiber with an aqueous sodium hydroxide solution, said fiber is carboxymethylated by reaction with a monochloro acetic acid solution for a given time (hours) in such a manner that the degree of partial substitution of the glucose units constituting the cellulose molecule (etherification degree) is 0.5- less than 1.0% and that, furthermore, the coagulation proteins fibrinogen, thrombin, and coagulation factor XIII are imparted by surface application or chemical bonding.

Abstract: Hydrorefining catalyst contains 0.1 to 25 wt % in total of at least one hydrogenation active metal element selected from elements of Group 6, Group 8, Group 9, and Group 10 of the Periodic Table, and 0.1 to 3 wt % potassium on a carrier formed of porous inorganic oxide. The concentration distribution of the hydrogenation active metal element is higher in the central part than in the peripheral part of the catalyst, and the concentration distribution of potassium is higher in the peripheral part than in the central part of the catalyst. The pores on the outside surface of the catalyst are not plugged by the metal content of hetero compounds and hetero compounds can be efficiently diffused to inside the catalyst. As a result, long-term retention of a state of high activity is possible.

Abstract: A moving hearth is formed by providing a layer of hearth material primarily composed of iron oxide on a base refractory in a reducing furnace and then sintering the hearth material so that the sintered moving hearth is not melted at an operational temperature in a reducing step. The moving hearth is more easily constructed compared to providing a shaped or amorphous refractory on the base refractory, has high durability, and can maintain surface flatness during operation.

Abstract: A moving hearth reducing furnace is operated, while a gap is provided between a discharging apparatus for discharging reduced iron agglomerates from the moving hearth reducing furnace and the surface of the moving hearth. The gap prevents squeezing metallic iron powder formed by reduction of powder included in iron oxide agglomerates into the surface of the moving hearth and the formation of an iron sheet. An iron oxide layer formed on the moving hearth during the operation can be periodically scraped off without shutdown of the furnace.

Abstract: An apparatus for photolithographically transferring, onto a plate-like member a pattern corresponding to picture elements of a liquid crystal display device and a pattern corresponding to driving circuits and so on, by use of a photomask. The surface of the plate-like member is divided into different areas and, each time one of the different areas of the plate-like member is subjected to the pattern transfer operation, the plate-like member is fed stepwise relative to an optical system provided to project an image of the photomask onto the plate-like member. At the same time, the range of the photomask pattern which is to be transferred onto the plate-like member is changed.