Patents by Inventor Koichi Osano
Koichi Osano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9236381Abstract: A nonvolatile memory element of the present invention comprises a first electrode (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (104), a resistance value of the resistance variable layer varying reversibly according to an electric signal applied between the electrodes (103), (105), and the resistance variable layer (104) comprises at least a tantalum oxide, and is configured to satisfy 0<x<2.5 when the tantalum oxide is represented by TaOx.Type: GrantFiled: October 24, 2007Date of Patent: January 12, 2016Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Satoru Fujii, Takeshi Takagi, Shunsaku Muraoka, Koichi Osano, Kazuhiko Shimakawa
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Patent number: 8492875Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode, a variable resistance layer, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes. The variable resistance layer includes at least a tantalum oxide, and is configured to satisfy 0 <x<2.5 when the tantalum oxide is represented by TaOx; and wherein when a resistance value between the electrodes is in the low-resistance state is RL, a resistance value between the electrodes is in the high-resistance state is RH, and a resistance value of a portion other than the variable resistance layer in a current path connecting a first terminal to a second terminal via the first electrode, the variable resistance layer and the second electrode, is R0, R0 satisfies RL <R0.Type: GrantFiled: May 30, 2012Date of Patent: July 23, 2013Assignee: Panasonic CorporationInventors: Koichi Osano, Satoru Fujii, Shunsaku Muraoka
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Patent number: 8445319Abstract: A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0<x<2.5) and a second region comprising a second oxygen-deficient tantalum oxide having a composition represented by TaOy (x<y<2.5), the first region and the second region being arranged in a thickness direction of the resistance variable layer.Type: GrantFiled: August 8, 2011Date of Patent: May 21, 2013Assignee: Panasonic CorporationInventors: Yoshihiko Kanzawa, Koji Katayama, Satoru Fujii, Shunsaku Muraoka, Koichi Osano, Satoru Mitani, Ryoko Miyanaga, Takeshi Takagi, Kazuhiko Shimakawa
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Publication number: 20120235111Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode, a variable resistance layer, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes. The variable resistance layer includes at least a tantalum oxide, and is configured to satisfy 0<x<2.5 when the tantalum oxide is represented by TaOx; and wherein when a resistance value between the electrodes is in the low-resistance state is RL, a resistance value between the electrodes is in the high-resistance state is RH, and a resistance value of a portion other than the variable resistance layer in a current path connecting a first terminal to a second terminal via the first electrode, the variable resistance layer and the second electrode, is R0, R0 satisfies RL<R0.Type: ApplicationFiled: May 30, 2012Publication date: September 20, 2012Applicant: Panasonic CorporationInventors: Koichi OSANO, Satoru Fujii, Shunsaku Muraoka
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Patent number: 8263961Abstract: A thin film storage device includes a first electrode (3), a first variable resistance thin film (2), and a second electrode (1). The first electrode (3) is formed over a surface of a substrate (4). The first variable resistance thin film (2) is formed over a surface of the first electrode (3). The second electrode (1) is formed over a surface of the first variable resistance thin film (2). The first variable resistance thin film (2) comprises a material whose resistance in a bulk state changes in accordance with at least one of a lattice strain and a change of charge-order.Type: GrantFiled: October 22, 2004Date of Patent: September 11, 2012Assignee: Panasonic CorporationInventors: Koichi Osano, Shunsaku Muraoka, Hiroshi Sakakima
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Patent number: 8217489Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode, a variable resistance layer, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes. The variable resistance layer includes at least a tantalum oxide, and is configured to satisfy 0<x<2.5 when the tantalum oxide is represented by TaOx; and wherein when a resistance value between the electrodes is in the low-resistance state is RL, a resistance value between the electrodes is in the high-resistance state is RH, and a resistance value of a portion other than the variable resistance layer in a current path connecting a first terminal to a second terminal via the first electrode, the variable resistance layer and the second electrode, is R0, R0 satisfies RL<R0.Type: GrantFiled: September 27, 2011Date of Patent: July 10, 2012Assignee: Panasonic CorporationInventors: Koichi Osano, Satoru Fujii, Shunsaku Muraoka
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Publication number: 20120074369Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode, a variable resistance layer, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes. The variable resistance layer includes at least a tantalum oxide, and is configured to satisfy 0<x<2.5 when the tantalum oxide is represented by TaOx; and wherein when a resistance value between the electrodes is in the low-resistance state is RL, a resistance value between the electrodes is in the high-resistance state is RH, and a resistance value of a portion other than the variable resistance layer in a current path connecting a first terminal to a second terminal via the first electrode, the variable resistance layer and the second electrode, is R0, R0 satisfies RL<R0.Type: ApplicationFiled: September 27, 2011Publication date: March 29, 2012Applicant: Panasonic CorporationInventors: Koichi OSANO, Satoru Fujii, Shunsaku Muraoka
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Publication number: 20110294259Abstract: A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0<x<2.5) and a second region comprising a second oxygen-deficient tantalum oxide having a composition represented by TaOy (x<y<2.5), the first region and the second region being arranged in a thickness direction of the resistance variable layer.Type: ApplicationFiled: August 8, 2011Publication date: December 1, 2011Applicant: Panasonic CorporationInventors: Yoshihiko KANZAWA, Koji Katayama, Satoru Fujii, Shunsaku Muraoka, Koichi Osano, Satoru Mitani, Ryoko Miyanaga, Takeshi Takagi, Kazuhiko Shimakawa
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Patent number: 8058636Abstract: A nonvolatile memory apparatus includes a first electrode (111), a second electrode (112), a variable resistance layer (113) which is disposed between the electrodes, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes, a first terminal (103) connected to the first electrode, and a second terminal (104) connected to the second terminal. The variable resistance layer comprises at least a tantalum oxide, and is configured to satisfy 0<x<2.Type: GrantFiled: March 27, 2008Date of Patent: November 15, 2011Assignee: Panasonic CorporationInventors: Koichi Osano, Satoru Fujii, Shunsaku Muraoka
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Patent number: 8022502Abstract: A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0<x<2.5) and a second region comprising a second oxygen-deficient tantalum oxide having a composition represented by TaOy (x<y<2.5), the first region and the second region being arranged in a thickness direction of the resistance variable layer.Type: GrantFiled: March 26, 2008Date of Patent: September 20, 2011Assignee: Panasonic CorporationInventors: Yoshihiko Kanzawa, Koji Katayama, Satoru Fujii, Shunsaku Muraoka, Koichi Osano, Satoru Mitani, Ryoko Miyanaga, Takeshi Takagi, Kazuhiko Shimakawa
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Resistance variable element, resistance variable memory apparatus, and resistance variable apparatus
Patent number: 8018761Abstract: A resistance variable element (10), a resistance variable memory apparatus, and a resistance variable apparatus, comprise a first electrode (2), a second electrode (4), and a resistance variable layer (3) which is disposed between the first electrode (2) and the second electrode (4) and is electrically connected to the first electrode (2) and to the second electrode (4), wherein the resistance variable layer (3) contains a material having a spinel structure which is expressed as a chemical formula of (NixFe1-x) Fe2O4, X being not smaller than 0.35 and not larger than 0.Type: GrantFiled: December 20, 2007Date of Patent: September 13, 2011Assignee: Panasonic CorporationInventors: Shunsaku Muraoka, Koichi Osano, Satoru Fujii -
Patent number: 8018760Abstract: A resistance variable element of the present invention and a resistance variable memory apparatus using the resistance variable element are a resistance variable element (10) including a first electrode, a second electrode, and a resistance variable layer (3) provided between the first electrode (2) and the second electrode (4) to be electrically connected to the first electrode (2) and the second electrode (4), wherein the resistance variable layer (3) contains a material having a spinel structure represented by a chemical formula of (ZnxFe1-x)Fe2O4, and the resistance variable element (10) has a feature that an electrical resistance between the first electrode (2) and the second electrode (4) increases by applying a first voltage pulse to between the first electrode (2) and the second electrode (4), and the electrical resistance between the first electrode (2) and the second electrode (4) decreases by applying a second voltage pulse whose polarity is the same as the first voltage pulse to between the firstType: GrantFiled: December 20, 2007Date of Patent: September 13, 2011Assignee: Panasonic CorporationInventors: Shunsaku Muraoka, Koichi Osano, Satoru Fujii
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Patent number: 7965539Abstract: A nonvolatile memory element (101) of the present invention includes a resistance variable layer (112) which intervenes between a first electrode (111) and a second electrode (113) and is configured to include at least an oxide of a metal element of VI group, V group or VI group, and when an electric pulse of a specific voltage is applied between the first voltage (111) and the second voltage (113), the resistance variable layer is turned to have a first high-resistance state or a second high-resistance state in which its resistance value is a high-resistance value RH, or a low-resistance state in which its resistance value is a low-resistance value RL.Type: GrantFiled: September 25, 2008Date of Patent: June 21, 2011Assignee: Panasonic CorporationInventors: Koichi Osano, Shunsaku Muraoka, Satoru Fujii, Kazuhiko Shimakawa
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Patent number: 7964869Abstract: A memory element comprises a first electrode, a second electrode, and a resistance variable film 2 which is disposed between the first and second electrodes to be connected to the first and second electrodes, a resistance value of the resistance variable film 2 varying based on voltage applied between the first and second electrodes, the resistance variable film 2 includes a layer 2a made of Fe3O4 and a layer 2b made of Fe2O3 or a spinel structure oxide which is expressed as MFe2O4 (M: metal element except for Fe); and the layer 2a made of Fe3O4 is thicker than the layer 2b made of Fe2O3 or the spinel structure oxide.Type: GrantFiled: August 17, 2007Date of Patent: June 21, 2011Assignee: Panasonic CorporationInventors: Shunsaku Muraoka, Satoru Fujii, Satoru Mitani, Koichi Osano
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Resistance variable element, nonvolatile switching element, and resistance variable memory apparatus
Patent number: 7948789Abstract: A resistance variable element comprises a first electrode (2), a second electrode (4), and a resistance variable layer (3) which is disposed between the first electrode and the second electrode, and electrically connected to the first electrode and the second electrode, wherein the resistance variable layer comprises material including TaOX (1.6?X?2.2), an electric resistance between the first electrode and the second electrode is lowered by application of a first voltage pulse having a first voltage between the first electrode and the second electrode, and the electric resistance between the first electrode and the second electrode is increased by application of a second voltage pulse having a second voltage of the same polarity as the first voltage, between the first electrode and the second electrode.Type: GrantFiled: March 27, 2008Date of Patent: May 24, 2011Assignee: Panasonic CorporationInventors: Shunsaku Muraoka, Koichi Osano, Satoru Fujii -
Patent number: 7855910Abstract: A memory device including a plurality of electric elements corresponding to a plurality of transistors on a one-to-one basis; a word line driver for driving a plurality of word lines; and a bit line/plate line driver for driving a plurality of bit lines and a plurality of plate lines. Each of the plurality of electric elements includes a first electrode connected to one of the transistors corresponding to the electric element, a second electrode connected to one of the plate lines corresponding to the electric element, and a variable-resistance film connected between the first electrode and the second electrode, and the variable-resistance film includes Fe3O4 as a constituent element and has a crystal grain size of 5 nm to 150 nm.Type: GrantFiled: January 19, 2007Date of Patent: December 21, 2010Assignee: Panasonic CorporationInventors: Satoru Mitani, Koichi Osano, Shunsaku Muraoka, Kumio Nago
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Patent number: 7826247Abstract: An initialization method of the present invention is a method for initializing a material (variable-resistance material) (2) whose resistance value increases/decreases according to the polarity of an applied electric pulse. An electric pulse having a first polarity is applied at least once between first and second electrodes (1, 3) connected to the variable-resistance material (2) such that the potential of the first electrode is higher than that of the second electrode.Type: GrantFiled: March 31, 2008Date of Patent: November 2, 2010Assignee: Panasonic CorporationInventors: Shunsaku Muraoka, Koichi Osano, Ken Takahashi, Masafumi Shimotashiro
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Publication number: 20100271859Abstract: A nonvolatile memory element (101) of the present invention comprises a resistance variable layer (112) which intervenes between a first electrode (111) and a second electrode (113) and is configured to include at least an oxide of a metal element of VI group, V group or VI group, and when an electric pulse of a specific voltage is applied between the first voltage (111) and the second voltage (113), the resistance variable layer is turned to have a first high-resistance state or a second high-resistance state in which its resistance value is a high-resistance value RH, or a low-resistance state in which its resistance value is a low-resistance value RL.Type: ApplicationFiled: September 25, 2008Publication date: October 28, 2010Applicant: PANASONIC CORPORATIONInventors: Koichi Osano, Shunsaku Muraoka, Satoru Fujii, Kazuhiko Shimakawa
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RESISTANCE VARIABLE ELEMENT, NONVOLATILE SWITCHING ELEMENT, AND RESISTANCE VARIABLE MEMORY APPARATUS
Publication number: 20100232204Abstract: A resistance variable element comprises a first electrode (2), a second electrode (4), and a resistance variable layer (3) which is disposed between the first electrode and the second electrode, and electrically connected to the first electrode and the second electrode, wherein the resistance variable layer comprises material including TaOX (1.6?X?2.2), an electric resistance between the first electrode and the second electrode is lowered by application of a first voltage pulse having a first voltage between the first electrode and the second electrode, and the electric resistance between the first electrode and the second electrode is increased by application of a second voltage pulse having a second voltage of the same polarity as the first voltage, between the first electrode and the second electrode.Type: ApplicationFiled: March 27, 2008Publication date: September 16, 2010Inventors: Shunsaku Muraoka, Koichi Osano, Satoru Fujii -
Patent number: 7787280Abstract: An electric element includes a first terminal (1), a second terminal (3), and a variable-resistance film (2). The variable-resistance film (2) is connected between the first terminal (1) and the second terminal (3). The variable-resistance film (2) includes Fe3O4 crystal phase and Fe2O3 crystal phase.Type: GrantFiled: April 4, 2006Date of Patent: August 31, 2010Assignee: Panasonic CorporationInventors: Satoru Mitani, Koichi Osano, Shunsaku Muraoka, Kumio Nago