Abstract: An electric element includes a first electrode (1), a second electrode (3), and a variable-resistance film (2) connected between the first electrode (1) and the second electrode (3). The variable-resistance film (2) contains Fe (iron) and O (oxygen) as constituent elements. The content of oxygen in the variable-resistance film (2) is modulated along the film thickness direction.

Abstract: A first variable resistor (5) is connected between a first terminal (7) and a third terminal (9) and increases/reduces its resistance value in accordance with the polarity of a pulse voltage applied between the first terminal (7) and the third terminal (9). A second variable resistor (6) is connected between the third terminal (9) and a second terminal (8) and increases/reduces its resistance value in accordance with the polarity of a pulse voltage applied between the third terminal (9) and the second terminal (8). Given pulse voltages are applied between the first terminal (7) and the third terminal (9) and between the third terminal (9) and the second terminal (8) to reversibly change the resistance values of the first and second variable resistors (5, 6), thereby recording one bit or multiple bits of information.

Abstract: A first variable resistor (5) is connected between a first terminal (7) and a third terminal (9) and increases/reduces its resistance value in accordance with the polarity of a pulse voltage applied between the first terminal (7) and the third terminal (9). A second variable resistor (6) is connected between the third terminal (9) and a second terminal (8) and increases/reduces its resistance value in accordance with the polarity of a pulse voltage applied between the third terminal (9) and the second terminal (8). Given pulse voltages are applied between the first terminal (7) and the third terminal (9) and between the third terminal (9) and the second terminal (8) to reversibly change the resistance values of the first and second variable resistors (5, 6), thereby recording one bit or multiple bits of information.

Abstract: An electric element includes: a first electrode; a second electrode; and a variable-resistance film connected between the first electrode and the second electrode. The variable-resistance film includes Fe3O4 as a constituent element and has a crystal grain size of 5 nm to 150 nm.

Abstract: A memory element comprises a first electrode, a second electrode, and a resistance variable film 2 which is disposed between the first and second electrodes to be connected to the first and second electrodes, a resistance value of the resistance variable film 2 varying based on voltage applied between the first and second electrodes, the resistance variable film 2 includes a layer 2a made of Fe3O4 and a layer 2b made of Fe2O3 or a spinel structure oxide which is expressed as MFe2O4 (M: metal element except for Fe); and the layer 2a made of Fe3O4 is thicker than the layer 2b made of Fe2O3 or the spinel structure oxide.

Abstract: A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0<x<2.5) and a second region comprising a second oxygen-deficient tantalum oxide having a composition represented by TaOy (x<y<2.5), the first region and the second region being arranged in a thickness direction of the resistance variable layer.

Abstract: A nonvolatile memory apparatus comprises a first electrode (111), a second electrode (112), a variable resistance layer (113) which is disposed between the electrodes, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes, a first terminal (103) connected to the first electrode, and a second terminal (104) connected to the second terminal. The variable resistance layer comprises at least a tantalum oxide, and is configured to satisfy 0<x<2.

Abstract: A nonvolatile memory element of the present invention comprises a first electrode (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (104), a resistance value of the resistance variable layer varying reversibly according to an electric signal applied between the electrodes (103),(105), and the resistance variable layer (104) comprises at least a tantalum oxide, and is configured to satisfy 0<x<2.5 when the tantalum oxide is represented by TaOx.

Abstract: An electric element includes: a first electrode (1); a second electrode (3); and a layer (2) connected between the first electrode and the second electrode and having a diode characteristic and a variable resistance characteristic. The layer (2) conducts a substantial electric current in a forward direction extending from one of the first electrode (1) and the second electrode (3) to the other electrode as compared to a reverse direction opposite of the forward direction. The resistance value of the layer (2) for the forward direction increases or decreases according to a predetermined pulse voltage applied between the first electrode (1) and the second electrode (3).

Abstract: First electrode layer includes a plurality of first electrode lines (W1, W2) extending parallel to each other. State-variable layer lying on the first electrode layer includes a plurality of state-variable portions (60-11, 60-12, 60-21, 60-22) which exhibits a diode characteristic and a variable-resistance characteristic. Second electrode layer lying on the state-variable layer includes a plurality of second electrode lines (B1, B2) extending parallel to each other. The plurality of first electrode lines and the plurality of second electrode lines are crossing each other when seen in a layer-stacking direction with the state-variable layer interposed therebetween. State-variable portion (60-11) is provided at an intersection of the first electrode line (W1) and the second electrode line (B1) between the first electrode line and the second electrode line.

Abstract: A first variable resistor (5) is connected between a first terminal (7) and a third terminal (9) and increases/reduces its resistance value in accordance with the polarity of a pulse voltage applied between the first terminal (7) and the third terminal (9). A second variable resistor (6) is connected between the third terminal (9) and a second terminal (8) and increases/reduces its resistance value in accordance with the polarity of a pulse voltage applied between the third terminal (9) and the second terminal (8). Given pulse voltages are applied between the first terminal (7) and the third terminal (9) and between the third terminal (9) and the second terminal (8) to reversibly change the resistance values of the first and second variable resistors (5, 6), thereby recording one bit or multiple bits of information.

Abstract: An electric element comprises: a first electrode (1); a second electrode (3); and a layer (2) connected between the first electrode and the second electrode and having a diode characteristic and a variable resistance characteristic. The layer (2) conducts a substantial electric current in a forward direction extending from one of the first electrode (1) and the second electrode (3) to the other electrode as compared to a reverse direction opposite of the forward direction. The resistance value of the layer (2) for the forward direction increases or decreases according to a predetermined pulse voltage applied between the first electrode (1) and the second electrode (3).

Abstract: An electric element includes a first terminal (1), a second terminal (3), and a variable-resistance film (2). The variable-resistance film (2) is connected between the first terminal (1) and the second terminal (3). The variable-resistance film (2) includes Fe3O4 crystal phase and Fe2O3 crystal phase.

Abstract: A first variable resistor (5) is connected between a first terminal (7) and a third terminal (9) and increases/reduces its resistance value in accordance with the polarity of a pulse voltage applied between the first terminal (7) and the third terminal (9). A second variable resistor (6) is connected between the third terminal (9) and a second terminal (8) and increases/reduces its resistance value in accordance with the polarity of a pulse voltage applied between the third terminal (9) and the second terminal (8). Given pulse voltages are applied between the first terminal (7) and the third terminal (9) and between the third terminal (9) and the second terminal (8) to reversibly change the resistance values of the first and second variable resistors (5, 6), thereby recording one bit or multiple bits of information.

Abstract: An initialization method of the present invention is a method for initializing a material (variable-resistance material) (2) whose resistance value increases/decreases according to the polarity of an applied electric pulse. An electric pulse having a first polarity is applied at least once between first and second electrodes (1, 3) connected to the variable-resistance material (2) such that the potential of the first electrode is higher than that of the second electrode.

Abstract: First electrode layer includes a plurality of first electrode lines (W1, W2) extending parallel to each other. State-variable layer lying on the first electrode layer includes a plurality of state-variable portions (60-11, 60-12, 60-21, 60-22) which exhibits a diode characteristic and a variable-resistance characteristic. Second electrode layer lying on the state-variable layer includes a plurality of second electrode lines (B1, B2) extending parallel to each other. The plurality of first electrode lines and the plurality of second electrode lines are crossing each other when seen in a layer-stacking direction with the state-variable layer interposed therebetween. State-variable portion (60-11) is provided at an intersection of the first electrode line (W1) and the second electrode line (B1) between the first electrode line and the second electrode line.

Abstract: An electric element includes a first electrode (1), a second electrode (3), and a variable-resistance film (2) connected between the first electrode (1) and the second electrode (3). The variable-resistance film (2) contains Fe (iron) and O (oxygen) as constituent elements. The content of oxygen in the variable-resistance film (2) is modulated along the film thickness direction.

Abstract: An initialization method of the present invention is a method for initializing a material (variable-resistance material) (2) whose resistance value increases/decreases according to the polarity of an applied electric pulse. An electric pulse having a first polarity is applied at least once between first and second electrodes (1, 3) connected to the variable-resistance material (2) such that the potential of the first electrode is higher than that of the second electrode.

Abstract: In a magnetic head, a multilayer film is disposed, the multilayer film including metal magnetic films and non-magnetic films that are alternately laminated, and a boundary between the multilayer film and a magnetic oxide substrate or a non-magnetic substrate on which the multilayer film is to be formed is parallel with a gap section at a surface of the magnetic head for sliding with respect to a magnetic recording medium. The metal magnetic films constituting the multilayer film have two or more types of thickness, or the metal magnetic films constituting the multilayer film have a uniform thickness, and the uniform thickness t satisfies t<v×cos?/fmax, where v denotes a relative speed of the head to the recording medium, fmax denotes an upper limit of frequencies to be used and ? denotes an azimuth angle. With this configuration, a magnetic head having a suppressed pseudo signal and reduced noise can be provided, and a magnetic recording/reproducing device incorporating this magnetic head can be provided.

Abstract: A thin film storage device includes a first electrode (3), a first variable resistance thin film (2), and a second electrode (1). The first electrode (3) is formed over a surface of a substrate (4). The first variable resistance thin film (2) is formed over a surface of the first electrode (3). The second electrode (1) is formed over a surface of the first variable resistance thin film (2). The first variable resistance thin film (2) comprises a material whose resistance in a bulk state changes in accordance with at least one of a lattice strain and a change of charge-order.