Abstract: A semiconductor memory device according to an embodiment, includes a first semiconductor member, a second semiconductor member, an insulating member, a plurality of electrode films, a first electrode, and a second electrode. The first semiconductor member and the second semiconductor member are separated in a first direction and extending in a second direction. The second direction crosses the first direction. The insulating member is provided between the first semiconductor member and the second semiconductor member. The plurality of electrode films are arranged to be separated from each other along the second direction. Each of the electrode films surrounds the first semiconductor member, the second semiconductor member, and the insulating member when viewed from the second direction. The first electrode is provided between the first semiconductor member and the electrode film. The second electrode is provided between the second semiconductor member and the electrode film.

Abstract: A carrier is provided including a core particle and a resin layer coating the surface of the core particle. The resin layer includes fine metal particles, and a detected metal element amount A obtained by X-ray photoelectron spectrometry of the surface of the carrier is in a range of 4.0 atomic %?A?20.0 atomic % and an average major-axis length B of the fine metal particle exposing from the resin layer is in a range of 100 nm?B?800 nm.

Abstract: Provided is an electrostatic latent image developing white toner, including: a white toner including at least a binder resin, a white pigment, and a release agent; and a magnetic carrier including at least a core material, and a coating layer coating the core material and made of a coating resin and conductive particles, wherein Ra of the magnetic carrier is in a range of from 0.50 ?m to 1.00 ?m, and a bulk density of the magnetic carrier is in a range of from 2.08 g/cm3 to 2.24 g/cm3.

Abstract: A carrier includes a resin layer including Al and Sn and covering the surface of the carrier. A detectable amount of Al is from 1.0% to 12.1% by atom and a ratio (Al/Sn) of the detectable amount of Al to that of Sn is from 2.0 to 50.0 when the carrier is subjected to an X-ray photoelectron spectroscopic (XPS) analysis.

Abstract: Carrier for image forming includes a core material particle including a magnetic material and a coating layer disposed on the surface of the core material particle, the coating layer including a resin, carbon black, an inorganic particulate A, and an inorganic particulate B. The carbon black has a concentration gradient along a thickness direction of the coating layer with a concentration from high to low toward a surface of the coating layer while the inorganic particulate A has a concentration gradient along a thickness direction of the coating layer with a concentration from low to high toward the surface of the coating layer. The volume ratio of the carbon black is 0-30 percent at a depth range of 0.0-0.1 ?m from the surface of the coating layer. The inorganic particulate A is electroconductive with a powder specific resistance of 200 ?·cm or less.

Abstract: A carrier including a resin layer including at least one kind of particles, wherein the at least one kind of the particles are particles of barium sulfate, wherein an amount of Ba detected is 0.3 atomic % or greater in a Ba analysis through X-ray photo-electron spectroscopy (XPS) of the carrier, and wherein circle-equivalent diameters of the particles of the barium sulfate are 400 nm or greater but 900 nm or smaller.

Abstract: A carrier is provided. The carrier includes a magnetic core particle and a resin layer coating a surface of the magnetic core particle. The resin layer includes a resin, a conductive particle including tungsten tin oxide, and a chargeable filler.

Abstract: A semiconductor memory device according to one embodiment, includes a first electrode film, a plurality of semiconductor members, and a charge storage member. The first electrode film includes three or more first portions and a second portion connecting the first portions to each other. The first portions extend in a first direction and are arranged along a second direction that intersects with the first direction. The plurality of semiconductor members are arranged along the first direction between the first portions and extending in a third direction. The third direction intersects with a plane containing the first direction and the second direction. The charge storage member is disposed between each of the semiconductor members and each of the first portions. The second portion is disposed between the semiconductor members.

Abstract: An electric vehicle includes: a motor configured to drive a wheel; a smoothing capacitor provided within a power supply circuit that supplies electric power to the motor; a processor configured to perform a discharge process when the electric vehicle crashes, the discharge process discharging the smoothing capacitor by controlling the power supply circuit; a power source connected to each of a plurality of electric loads including the processor via a corresponding fuse; a relay circuit electrically connected between the power source and the processor and configured to be driven to electrically connect between the power source and the processor in response to a relay drive signal outputted from the processor; and a holding circuit configured to temporarily hold the relay circuit in a driven state when the processor quits outputting the relay drive signal.

Abstract: A semiconductor memory device according to one embodiment, includes a first electrode film, a plurality of semiconductor members, and a charge storage member. The first electrode film includes three or more first portions and a second portion connecting the first portions to each other. The first portions extend in a first direction and are arranged along a second direction that intersects with the first direction. The plurality of semiconductor members are arranged along the first direction between the first portions and extending in a third direction. The third direction intersects with a plane containing the first direction and the second direction. The charge storage member is disposed between each of the semiconductor members and each of the first portions. The second portion is disposed between the semiconductor members.

Abstract: Provided is an electrostatic latent image developing white toner, including: a white toner including at least a binder resin, a white pigment, and a release agent; and a magnetic carrier including at least a core material, and a coating layer coating the core material and made of a coating resin and conductive particles, wherein Ra of the magnetic carrier is in a range of from 0.50 ?m to 1.00 ?m, and a bulk density of the magnetic carrier is in a range of from 2.08 g/cm3 to 2.24 g/cm3.

Abstract: A synthetic controlled variable is obtained by obtaining a synthetic quantity using measurement results of a first and a second measuring instruments and corresponding gains (or transfer function) and synthesizing the synthetic quantity and one of the measurement results of the first and the second measuring instruments, respectively, via a high pass filter and a low pass filter. A feedback control system is structured that obtains a control input using a synthetic controlled variable and a desired value, and gives a plant the control input. This makes adding of a high pass filter for removing offset of installation position of the first and the second measuring instruments no longer necessary, and allows a driving system which controls robust driving in a high bandwidth of a plate stage regardless of bandwidth in which resonance appears to be designed.

Abstract: A semiconductor memory device according to an embodiment, includes a first semiconductor member, a second semiconductor member, an insulating member, a plurality of electrode films, a first electrode, and a second electrode. The first semiconductor member and the second semiconductor member are separated in a first direction and extending in a second direction. The second direction crosses the first direction. The insulating member is provided between the first semiconductor member and the second semiconductor member. The plurality of electrode films are arranged to be separated from each other along the second direction. Each of the electrode films surrounds the first semiconductor member, the second semiconductor member, and the insulating member when viewed from the second direction. The first electrode is provided between the first semiconductor member and the electrode film. The second electrode is provided between the second semiconductor member and the electrode film.

Abstract: A semiconductor memory device according to one embodiment, includes a first electrode film, a plurality of semiconductor members, and a charge storage member. The first electrode film includes three or more first portions and a second portion connecting the first portions to each other. The first portions extend in a first direction and are arranged along a second direction that intersects with the first direction. The plurality of semiconductor members are arranged along the first direction between the first portions and extending in a third direction. The third direction intersects with a plane containing the first direction and the second direction. The charge storage member is disposed between each of the semiconductor members and each of the first portions. The second portion is disposed between the semiconductor members.

Abstract: A developing device, including: a developer containing toner and carrier; and developer bearer configured to have surface thereof bear the developer and endlessly move, and to develop latent image over surface of latent image bearer by supplying toner in developer to latent image in developing region facing the latent image bearer, wherein carrier contains fine particles, value X in volume resistivity R (=10X) (?·cm) of carrier is 11.5-16.0, developer bearer includes: magnetic field generating unit including a plurality of magnetic poles; and developing sleeve having a cylindrical shape enclosing magnetic field generating unit, and configured to bear developer over outer circumferential surface of cylindrical shape by magnetic force of the magnetic field generating unit and perform surface moving by rotating relative to developing device body, and developing device includes developing sleeve voltage applying unit configured to apply AC component-containing voltage to developing sleeve.

Abstract: A synthetic controlled variable is obtained by obtaining a synthetic quantity using measurement results of a first and a second measuring instruments and corresponding gains (or transfer function) and synthesizing the synthetic quantity and one of the measurement results of the first and the second measuring instruments, respectively, via a high pass filter and a low pass filter. A feedback control system is structured that obtains a control input using a synthetic controlled variable and a desired value, and gives a plant the control input. This makes adding of a high pass filter for removing offset of installation position of the first and the second measuring instruments no longer necessary, and allows a driving system which controls robust driving in a high bandwidth of a plate stage regardless of bandwidth in which resonance appears to be designed.

Abstract: A carrier is provided. The carrier includes a magnetic core particle and a resin layer coating a surface of the magnetic core particle. The resin layer includes a resin, a conductive particle including tungsten tin oxide, and a chargeable filler.

Abstract: Carrier for image forming includes a core material particle including a magnetic material and a coating layer disposed on the surface of the core material particle, the coating layer including a resin, carbon black, an inorganic particulate A, and an inorganic particulate B. The carbon black has a concentration gradient along a thickness direction of the coating layer with a concentration from high to low toward a surface of the coating layer while the inorganic particulate A has a concentration gradient along a thickness direction of the coating layer with a concentration from low to high toward the surface of the coating layer. The volume ratio of the carbon black is 0-30 percent at a depth range of 0.0-0.1 ?m from the surface of the coating layer. The inorganic particulate A is electroconductive with a powder specific resistance of 200 ?·cm or less.

Abstract: A power converter includes a backup power source Eb provided separately from a power source Es and designed to supply power during a discharge period, and a discharging driver Mb that turns on/off an upper-arm (one) switching element in series-connected switching elements Qu and Qd based on a drive signal that has at least one of a voltage and a frequency, and drives a lower-arm (the other) switching element Qd such that it is always on, the at least one of the voltage and the frequency of the drive signal being within a predetermined range lower than a drive signal outputted from a normal driver Mu, Md.

Abstract: A carrier includes a resin layer including Al and Sn and covering the surface of the carrier. A detectable amount of Al is from 1.0% to 12.1% by atom and a ratio (Al/Sn) of the detectable amount of Al to that of Sn is from 2.0 to 50.0 when the carrier is subjected to an X-ray photoelectron spectroscopic (XPS) analysis.