Abstract: An ink jet recording method including ejecting an aqueous ink from a first ejection port, and ejecting, from a second ejection port, an aqueous reaction liquid containing a reactant that reacts with the aqueous ink. The liquid ejection apparatus includes an element substrate having the second ejection port configured to eject the aqueous reaction liquid, a pressure chamber, and an energy-generating element, an upstream channel r, and a downstream channe, and the element substrate has a face configured to face the record medium in an ejection direction of the aqueous reaction liquid, wherein the method further including ejecting the aqueous reaction liquid from the second ejection port which is located closer to the pressure chamber than the face, and flowing the aqueous reaction liquid from the upstream channel to the downstream channel through the pressure chamber.

Abstract: A liquid ejection apparatus ejecting an aqueous ink and an aqueous reaction liquid containing a reactant that reacts with the aqueous ink to record an image on a record medium, wherein the liquid ejection apparatus includes an element substrate including: a plurality of individual channels having an ejection port configured to eject the liquid, a pressure chamber configured to supply the liquid to the ejection port, and an energy-generating element configured to generate energy to eject the liquid; an upstream channel configured to supply the liquid to the plurality of individual channels; and a downstream channel for outflow of the liquid from the plurality of individual channels, the ejection port has a protrusion protruding toward a center of the ejection port.

Abstract: A server includes a control unit. The control unit determines whether a parked vehicle is used as a shelter based on a first image which is included in an image captured by a camera and which is obtained by imaging the vehicle and surroundings of the vehicle.

Abstract: Speed enhancement of data reading is achieved while suppressing an influence of an offset voltage of a differential amplifier.

Abstract: A composition for absorbing carbon dioxide including an ionic liquid (A) containing a cation and an anion, and a protic compound (B) having a relative permittivity at 25° C. of 20 or more, wherein the cation at least includes a cation represented by the formula (1), the anion includes an anion where an acid dissociation constant (pKa) at 25° C. of its conjugate acid in water is 4.5 or more, and the ratio of a value obtained by multiplying the number of hydroxyl groups of the protic compound (B) by the number of moles of the protic compound (B) to the number of moles of the ionic liquid (A) [number of moles of protic compound (B)/number of moles of ionic liquid (A)] is 0.2 to 1.0: wherein R1 and R2 each independently represent a hydrogen or a C1-C6 linear alkyl group.

Abstract: A semiconductor device capable of changing a data programming process in a simple manner according to a situation is provided. The semiconductor device includes a plurality of memory cells, a programming circuit for supplying a programming current to the memory cell, and a power supply circuit for supplying power to the programming circuit. The power supply circuit includes a charge pump circuit for boosting the external power supply, a voltage of the external power supply according to the selection indication, and a selectable circuit capable of switching the boosted voltage boosted by the charge pump circuit. The control circuit further includes a control circuit for executing data programming processing by the programming circuit by switching the selection indication.

Abstract: A local polishing system comprises: a particle estimation unit (30) for estimating the film thickness distribution of a wafer; a local polishing region setting unit (11) for setting a local polishing region on the wafer based on the film thickness distribution; a polishing head selection unit (12) for selecting a polishing head based on the size of the local polishing region; a model storage (20) holding a recipe generating model that defines the relation between an input node and an output node, the input node being an attribute of the local polishing region, the output node comprising a recipe for a polishing process; a polishing recipe generator (13) that puts an attribute of the local polishing region set by the local polishing region setting unit (11) into the input node of the recipe generating model and determines a polishing recipe for polishing the local polishing region; and a polishing recipe transmitter (15) for transmitting data of the polishing recipe to a local polishing module (200) that perfo

Abstract: A local polishing system comprises: a particle estimation unit (30) for estimating the film thickness distribution of a wafer; a local polishing region setting unit (11) for setting a local polishing region on the wafer based on the film thickness distribution; a polishing head selection unit (12) for selecting a polishing head based on the size of the local polishing region; a model storage (20) holding a recipe generating model that defines the relation between an input node and an output node, the input node being an attribute of the local polishing region, the output node comprising a recipe for a polishing process; a polishing recipe generator (13) that puts an attribute of the local polishing region set by the local polishing region setting unit (11) into the input node of the recipe generating model and determines a polishing recipe for polishing the local polishing region; and a polishing recipe transmitter (15) for transmitting data of the polishing recipe to a local polishing module (200) that perfo

Abstract: A semiconductor device capable of increasing readout margin in a nonvolatile resistive random access memory is provided. A clamping circuit applies fixed potential to each of a memory element and a reference resistive element. A pre-charge circuit pre-charges first and second nodes to power-source potential. A sense amplifier amplifies the potential difference between the potential of the first node and the potential of the second node generated after a discharge period based on cell current and reference current after pre-charging made by the pre-charge circuit. A third node is coupled to the first and second nodes through a capacitor. An electric-charge supply circuit is connected to the third node, and supplies electric charge to the third node in the discharge period.

Abstract: A clamp element 46 applies a fixed potential to a bit line BL at a time of a readout operation. A reference current source RCS generates a reference current Iref. An offset current source OCS1 is activated at a time of a readout operation for an OTP cell OTPC, and at a time of being activated, generates an offset current Iof1 to be subtracted from a cell current Icel. At the time of the readout operation for the OTP cell OTPC, the sense amplifier SA detects a magnitude relationship between the reference current Iref and a readout current Ird obtained by subtracting the offset current Iof1 from the cell current Icel.

Abstract: Speed enhancement of data reading is achieved while suppressing an influence of an offset voltage of a differential amplifier.

Abstract: A semiconductor device capable of changing a data programming process in a simple manner according to a situation is provided. The semiconductor device includes a plurality of memory cells, a programming circuit for supplying a programming current to the memory cell, and a power supply circuit for supplying power to the programming circuit. The power supply circuit includes a charge pump circuit for boosting the external power supply, a voltage of the external power supply according to the selection indication, and a selectable circuit capable of switching the boosted voltage boosted by the charge pump circuit. The control circuit further includes a control circuit for executing data programming processing by the programming circuit by switching the selection indication.

Abstract: One object is to provide a polishing machine and a polishing method capable of improving a processing accuracy on the surface of an object. A method of polishing an object is provided. Such a method comprises: a first step of polishing an object by moving the object and a first polishing pad having a smaller dimension than that of the object relative to each other while the first polishing pad is made to contact the object, a second step of polishing the object, after the first step of polishing, by moving the object and a second polishing pad having a larger dimension than that of the object relative to each other while the second polishing pad is made to contact the object, and a step of detecting the state of the surface of the object before the first step of polishing.

Abstract: A drug administration device according to the present invention is a drug administration device for subcutaneously administering a drug, and includes a main body portion configured to be arranged on skin of a patient, and a movable portion to which at least one needle member protruding toward the skin is attached. The movable portion is configured to be capable of being moved between a first position that is spaced apart from the skin and a second position that is near the skin. The leading end portion of the needle member is to be inserted into the skin when the movable portion is located at the second position. The drug is to be discharged from a hole provided in the needle member.

Abstract: A non-transitory computer-readable storage medium storing a program of stretching operation of an elastic membrane which can enhance elasticity of an elastic membrane in a short time without using a dummy wafer is disclosed. The non-transitory computer-readable storage medium storing a program of stretching operation of an elastic membrane in a substrate holding apparatus, the program causes a computer to perform stretching operation of supplying a pressurized fluid to a pressure chamber formed by the elastic membrane and allowing the pressure chamber to be open to the atmosphere a predetermined number of times by a pressure regulating device in a state where the substrate holding apparatus is positioned above a polishing table during standby operation of a polishing apparatus.

Abstract: A semiconductor device capable of enlarging a read margin of a memory cell and a method of surrounding a read of a memory are provided. The reference word line RWL is activated in a time division manner with respect to the plurality of word lines WL. The precharge circuit PRE applies the read potential VRD to the bit line BL, and the precharge circuit PRE flows the read current Icel from the selected memory cell MC and the read reference current Iref from the reference cell RC to the bit line BL in a time division manner. A detection currents Ird2a, Irr2a, each of which is a current proportional to the current flowing through the bitline BL, flows through the current detection line CDL.

Abstract: The present disclosure provides a substrate processing apparatus including: a substrate holding unit that holds a substrate; a pressure regulator that regulates a pressure of a gas supplied into an elastic membrane; and a controller that controls the pressure regulator to make the pressure of the gas supplied into the elastic membrane variable in order to separate the substrate from the elastic membrane.