Patents by Inventor Koichi Terao

Koichi Terao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8144303
    Abstract: A liquid crystal apparatus includes: a liquid crystal panel having a pair of substrates and including a display area; and a case body having an opening in an area corresponding to the display area of the liquid crystal panel and being attached to the liquid crystal panel, in which the case body includes: a plurality of panel-shaped members having a laminated structure including a clearance in the direction of the thickness of the liquid crystal panel, openings provided at portions on the side of one side of the liquid crystal panel and on the side of the other side thereof opposing the one side corresponding to the clearance, a diaphragm formed in the clearance of the plurality of panel-shaped members from the side of the one side toward the side of the other side.
    Type: Grant
    Filed: December 11, 2008
    Date of Patent: March 27, 2012
    Assignee: Seiko Epson Corporation
    Inventors: Koichi Terao, Tsuyoshi Obikawa
  • Publication number: 20110242447
    Abstract: An oblique vapor deposition substrate having an oblique vapor deposition layer formed thereon is provided, wherein a plurality of pixel sections is arranged in a matrix of intersected straight lines of two directions with each pixel section being spaced apart from each other, and has been relatively rotated in a plane of the oblique vapor deposition substrate taking into consideration the distribution of the vapor deposition directions in the oblique vapor deposition layer.
    Type: Application
    Filed: March 30, 2011
    Publication date: October 6, 2011
    Applicant: Seiko Epson Corporation
    Inventor: Koichi Terao
  • Publication number: 20110242499
    Abstract: A liquid crystal projector includes a light modulating device, a cooling device, a dehumidification device, and a housing. The light modulating device forms an optical image by modulating light flux emitted from a light source based on image information. The cooling device cools air to be supplied to the light modulating device. The dehumidification device dehumidifies and dries air to be supplied to the corresponding cooling device. The housing includes a cooling medium flow path for circulating air among the light modulating device, the cooling device, and the dehumidification device. The cooling device includes a thermoelectric conversion material interposed between a pair of heat transmission plates arranged to face each other.
    Type: Application
    Filed: March 25, 2011
    Publication date: October 6, 2011
    Applicant: Seiko Epson Corporation
    Inventor: Koichi Terao
  • Patent number: 8012528
    Abstract: The object of the present invention is to provide a composition for conductive materials from which a conductive layer having a high carrier transport ability can be made, a conductive material formed of the composition and having a high carrier transport ability, a conductive layer formed using the conductive material as a main material, an electronic device provided with the conductive layer and having high reliability, and electronic equipment provided with the electronic device.
    Type: Grant
    Filed: August 25, 2005
    Date of Patent: September 6, 2011
    Assignee: Seiko Epson Corporation
    Inventors: Yuji Shinohara, Koichi Terao, Takashi Shinohara
  • Patent number: 7952680
    Abstract: A liquid crystal device including: a first partition wall which is disposed on the first substrate at the second substrate side, is adjacent to the liquid crystal at one wall surface, is adjacent to the seal material at the other wall surface, and is disposed along the outer circumference of the display region; a second partition wall which is disposed on the first substrate at the second substrate side, has a wall surface facing the wall surface of the first partition wall adjacent to the seal material, and is disposed along the outer circumference of the first partition wall; and a connection portion which is disposed on the first substrate at the second substrate side with a height lower than that of the first partition wall and the second partition wall, and is disposed so as to connect the wall surface of the first partition wall adjacent to the seal material and the wall surface of the second partition wall facing the wall surface.
    Type: Grant
    Filed: April 13, 2009
    Date of Patent: May 31, 2011
    Assignee: Seiko Epson Corporation
    Inventors: Koichi Terao, Takumi Seki
  • Patent number: 7893001
    Abstract: The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.
    Type: Grant
    Filed: August 12, 2010
    Date of Patent: February 22, 2011
    Assignee: Hitachi Metals, Ltd.
    Inventors: Takeshi Shimada, Kei Matsumoto, Koichi Terao, Kazuya Toji, Kazuhiro Nishikawa
  • Publication number: 20100323877
    Abstract: The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.
    Type: Application
    Filed: August 12, 2010
    Publication date: December 23, 2010
    Applicant: HITACHI METALS, LTD.
    Inventors: Takeshi SHIMADA, Kei Matsumoto, Koichi Terao, Kazuya Toji, Kazuhiro Nishikawa
  • Patent number: 7829639
    Abstract: A composition for conductive materials comprises a compound represented by the following general formula (A1): wherein: R1 is the same or different and each independently represents a C2-C8 straight-chain alkyl group; R2 is the same or different and each independently represents a hydrogen atom, a methyl group or an ethyl group; Y represents a group containing at least one substituted or unsubstituted aromatic hydrocarbon ring, or substituted or unsubstituted heterocyle; and X1 is the same or different and each represents a substituent represented by the following general formula (A2): wherein n1 is an integer of from 2 to 8.
    Type: Grant
    Filed: September 2, 2005
    Date of Patent: November 9, 2010
    Assignee: Seiko Epson Corporation
    Inventors: Koichi Terao, Yuji Shinohara, Takashi Shinohara
  • Patent number: 7825054
    Abstract: The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.
    Type: Grant
    Filed: August 11, 2005
    Date of Patent: November 2, 2010
    Assignee: Hitachi Metals, Ltd.
    Inventors: Takeshi Shimada, Kei Matsumoto, Koichi Terao, Kazuya Toji, Kazuhiro Nishikawa
  • Patent number: 7704906
    Abstract: A semiconductor porcelain composition [(BiNa)x(Ba1-yRy)1-x]TiO3 with 0<x?0.2, 0<y?0.02 and R being selected from the group consisting of La, Dy, Eu, Gd or Y is prepared by separately calcining a composition of (BaR)TiO3 at a temperature of 900° C. through 1300° C. and calcining a composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing the two calcined powders and forming and sintering the mixed calcined powder. Similarly, a semiconductor porcelain composition [(BiNa)x(Ba1-x][Ti1-zMz]O3 with 0<x?0.2, 0<z?0.005 and M being selected from the group consisting of Nb, Ta and Sb is prepared by separately calcining a composition of (BaM)TiO3 at a temperature of 900° C. through 1300° C. and calcining a composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing the two calcined powders, and forming and sintering the mixed calcined powders.
    Type: Grant
    Filed: April 28, 2006
    Date of Patent: April 27, 2010
    Assignee: Hitachi Metals, Ltd.
    Inventors: Takeshi Shimada, Koichi Terao, Kazuya Toji
  • Patent number: 7700509
    Abstract: A method of producing a semiconductor disk represented by a composition formula [(Bi0.5Na0.5)x(Ba1?yRy)1?x]TiO3, in which R is at least one element of La, Dy, Eu, Gd and Y and x and y each satisfy 0?x?0.14, and 0.002?y?0.02 includes carrying out a sintering in an inert gas atmosphere with an oxygen concentration of 9 ppm to 1% and wherein a treatment at an elevated temperature in an oxidizing atmosphere after the sintering is not carried out.
    Type: Grant
    Filed: March 31, 2006
    Date of Patent: April 20, 2010
    Assignee: Hitachi Metals, Ltd.
    Inventors: Takeshi Shimada, Koichi Terao, Kazuya Toji
  • Publication number: 20100075825
    Abstract: A semiconductor porcelain composition is prepared by separately preparing a composition of (BaR)TiO3 (R is La, Dy, Eu, Gd or Y) and a composition of (BiNa)TiO3, and calcining the composition of (BaR)TiO3 at a temperature of 900° C. through 1300° C. and calcining the composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing, forming and sintering the calcined powders. Similarly, a semiconductor porcelain composition is prepared by separately preparing a composition of (BaM)TiO3 (M is Nb, Ta or Sb) and a composition of (BiNa)TiO3, and calcining the composition of (BaM)TiO3 at a temperature of 900° C. through 1300° C. and calcining the composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing, forming and sintering the calcined powders.
    Type: Application
    Filed: November 27, 2009
    Publication date: March 25, 2010
    Applicant: HITACHI METALS, LTD.
    Inventors: Takeshi Shimada, Koichi Terao, Kazuya Toji
  • Patent number: 7683368
    Abstract: The object of the present invention is to provide a method of manufacturing a semiconductor element which can produce a semiconductor element provided with a semiconductor layer having a high carrier transport ability, a semiconductor element manufactured by the semiconductor element manufacturing method, an electronic device provided with the semiconductor element, and electronic equipment having a high reliability.
    Type: Grant
    Filed: April 18, 2006
    Date of Patent: March 23, 2010
    Assignee: Seiko Epson Corporation
    Inventors: Takashi Shinohara, Yuji Shinohara, Koichi Terao
  • Patent number: 7659043
    Abstract: The object of the present invention is to provide a composition for conductive materials from which a conductive layer having a high carrier transport ability can be made, a conductive material formed of the composition and having a high carrier transport ability, a conductive layer formed using the conductive material as a main material, an electronic device provided with the conductive layer and having high reliability, and electronic equipment provided with the electronic device.
    Type: Grant
    Filed: October 17, 2005
    Date of Patent: February 9, 2010
    Assignee: Seiko Epson Corporation
    Inventors: Takashi Shinohara, Yuji Shinohara, Koichi Terao
  • Publication number: 20100007842
    Abstract: Provided is a liquid crystal device in which a first substrate and a second substrate facing each other are adhered by a seal material, and liquid crystal is sandwiched between the first substrate and the second substrate in a region surrounded by the seal material so as to configure a display region in the region, the liquid crystal device including: a first partition wall which is disposed on the first substrate at the second substrate side, is adjacent to the liquid crystal at one wall surface, is adjacent to the seal material at the other wall surface, and is disposed along the outer circumference of the display region; a second partition wall which is disposed on the first substrate at the second substrate side, has a wall surface facing the wall surface of the first partition wall adjacent to the seal material, and is disposed along the outer circumference of the first partition wall; and a connection portion which is disposed on the first substrate at the second substrate side with a height lower than
    Type: Application
    Filed: April 13, 2009
    Publication date: January 14, 2010
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Koichi TERAO, Takumi SEKI
  • Patent number: 7632553
    Abstract: A method of treating an inorganic oxide film includes: dipping an inorganic oxide film having a plurality of pores therein which is formed by an oblique deposition method into a treatment liquid containing alcohol; reducing pressure of a space where the treatment liquid is provided to infiltrate the treatment liquid into the pores of the inorganic oxide film; and chemically bonding the alcohol to a surface of the inorganic oxide film and inner surfaces of the pores.
    Type: Grant
    Filed: April 18, 2006
    Date of Patent: December 15, 2009
    Assignee: Seiko Epson Corporation
    Inventors: Yuji Shinohara, Koichi Terao
  • Publication number: 20090233785
    Abstract: The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.
    Type: Application
    Filed: August 11, 2005
    Publication date: September 17, 2009
    Inventors: Takeshi Shimada, Kei Matsumoto, Koichi Terao, Kazuya Toji, Kazuhiro Nishikawa
  • Publication number: 20090207327
    Abstract: A liquid crystal apparatus includes: a liquid crystal panel having a pair of substrates and including a display area; and a case body having an opening in an area corresponding to the display area of the liquid crystal panel and being attached to the liquid crystal panel, in which the case body includes: a plurality of panel-shaped members having a laminated structure including a clearance in the direction of the thickness of the liquid crystal panel, openings provided at portions on the side of one side of the liquid crystal panel and on the side of the other side thereof opposing the one side corresponding to the clearance, a diaphragm formed in the clearance of the plurality of panel-shaped members from the side of the one side toward the side of the other side.
    Type: Application
    Filed: December 11, 2008
    Publication date: August 20, 2009
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Koichi TERAO, Tsuyoshi Obikawa
  • Patent number: 7548298
    Abstract: A liquid crystal panel includes: a pair of substrates; inorganic oriented films having plural fine pores being provided on surfaces of the substrates facing each other; a liquid crystal layer being provided between the inorganic oriented films; and a sealing part sealing the liquid crystal layer, the sealing part being provided between the inorganic oriented films and along an outer periphery of the inorganic oriented films, the liquid crystal panel further including a filling material including a compound having a first functional group having high affinity with the inorganic oriented films and a second functional group having high affinity with the sealing part, the filling material being filled in an area of the inorganic oriented films overlapping the sealing part to fill the fine pores and to covers surfaces of the inorganic oriented films.
    Type: Grant
    Filed: August 25, 2006
    Date of Patent: June 16, 2009
    Assignee: Seiko Epson Corporation
    Inventors: Koichi Terao, Yuji Shinohara, Tomoko Sasabayashi, Keipin Cho
  • Publication number: 20090088550
    Abstract: The object of the present invention is to provide a composition for conductive materials from which a conductive layer having a high carrier transport ability can be made, a conductive material formed of the composition and having a high carrier transport ability, a conductive layer formed using the conductive material as a main material, an electronic device provided with the conductive layer and having high reliability, and electronic equipment provided with the electronic device.
    Type: Application
    Filed: October 17, 2005
    Publication date: April 2, 2009
    Applicant: Seiko Epson Corporation
    Inventors: Takashi Shinohara, Yuji Shinohara, Koichi Terao